UTP cable of improved alien crosstalk characteristic
    1.
    发明授权
    UTP cable of improved alien crosstalk characteristic 失效
    UTP电缆具有改善的外来串扰特性

    公开(公告)号:US08785782B2

    公开(公告)日:2014-07-22

    申请号:US12985086

    申请日:2011-01-05

    IPC分类号: H01B7/00 H01B11/02 H01B11/06

    CPC分类号: H01B11/04

    摘要: An UTP cable of improved alien crosstalk characteristic according to present invention comprises, at least two pairs that is formed to have pitch by twisting at least two wires coated by insulation material; a separator including partition wall separating the pairs from one another; a sheath wrapping the pairs and the separator; and a spacer separating the pairs from the sheath, wherein the partition wall of the separator is formed to make an acute angle θ with the spacer.

    摘要翻译: 根据本发明的改进的外来串扰特性的UTP电缆包括至少两对,通过扭曲由绝缘材料涂覆的至少两根线形成为具有间距; 分离器,其包括将所述对彼此分离的分隔壁; 护套包裹对和分离器; 以及将所述对与所述护套分离的间隔件,其中所述隔板的分隔壁形成为形成锐角; 与间隔。

    ELECTRONIC DOCUMENT PREPARING APPARATUS, ELECTRONIC DOCUMENT PREPARING SYSTEM COMPRISING SAME AND CONTROL METHOD THEREOF AND ELECTRONIC DOCUMENT READING SYSTEM AND CONTROL METHOD THEREOF
    2.
    发明申请
    ELECTRONIC DOCUMENT PREPARING APPARATUS, ELECTRONIC DOCUMENT PREPARING SYSTEM COMPRISING SAME AND CONTROL METHOD THEREOF AND ELECTRONIC DOCUMENT READING SYSTEM AND CONTROL METHOD THEREOF 审中-公开
    电子文件制备装置,包括其的电子文件制备系统及其控制方法和电子文件读取系统及其控制方法

    公开(公告)号:US20130014009A1

    公开(公告)日:2013-01-10

    申请号:US13634443

    申请日:2011-12-07

    IPC分类号: G06F17/00

    CPC分类号: G06F17/21 G06Q10/10

    摘要: Provided is an electronic document preparing apparatus which provides an intuitive user interface to enable a user to prepare an electronic document in an easy and convenient manner, and which stores and analyzes a signal input by the user during an electronic document preparing process and an electronic document reading process so as to identify a user behavior pattern. Also provided are electronic documents preparing system including the electronic document preparing apparatus and a control method thereof, and an electronic document reading system and a control method thereof.

    摘要翻译: 提供一种电子文档准备装置,其提供直观的用户界面,以使用户能够以简单方便的方式准备电子文档,并且在电子文档准备过程和电子文档期间存储和分析用户输入的信号 阅读过程,以便识别用户行为模式。 还提供了包括电子文档准备装置及其控制方法的电子文件准备系统以及电子文档读取系统及其控制方法。

    X-RAY IMAGING APPARATUS
    3.
    发明申请
    X-RAY IMAGING APPARATUS 有权
    X射线成像装置

    公开(公告)号:US20110044428A1

    公开(公告)日:2011-02-24

    申请号:US12863180

    申请日:2009-01-15

    申请人: Tae Woo Kim

    发明人: Tae Woo Kim

    IPC分类号: G01N23/04

    摘要: The present invention relates to an X-ray imaging apparatus comprising an X-ray source unit generating an X-ray, an X-ray detecting sensor unit having a sensor panel equipped with multiple sensors detecting the X-ray which is generated from the X-ray source unit and passed through an object, and a panel-moving means mounted on the X-ray detecting sensor unit and moving the sensor panel. Thus, employing and butting multiple small X-ray sensors instead of expensive large sensors advantageously reduces the manufacturing cost for the X-ray imaging apparatus, and enables the imaging of the same wide area as with the use of the large sensors.

    摘要翻译: 本发明涉及包含产生X射线的X射线源单元的X射线成像装置,具有检测从X生成的X射线的多个传感器的传感器面板的X射线检测传感器单元 射线源单元并穿过物体,以及安装在X射线检测传感器单元上​​并移动传感器面板的面板移动装置。 因此,采用和对接多个小型X射线传感器而不是昂贵的大型传感器有利地降低了X射线成像设备的制造成本,并且能够使用与使用大型传感器相同的广泛区域的成像。

    Cooking apparatus
    4.
    发明申请
    Cooking apparatus 有权
    烹饪器具

    公开(公告)号:US20100212512A1

    公开(公告)日:2010-08-26

    申请号:US12656282

    申请日:2010-01-22

    IPC分类号: A47J37/00

    CPC分类号: F24C15/10 F24C15/102 H05B3/74

    摘要: A cooking apparatus equipped with a heating device enabling uniform distribution of heat. The cooking apparatus includes a plate to put a cooker thereon, a heater disposed under the plate, and a guide member disposed between the plate and the heater to induce energy emitted from the heater toward the plate.

    摘要翻译: 配备有能够均匀分布热量的加热装置的烹饪装置。 烹调装置包括一个放置炊具的板,设置在板下面的一个加热器,以及一个设置在板和加热器之间以引导从加热器向板发射的能量的引导件。

    Heater usable with cooker, method of manufacturing the same and cooker
    5.
    发明申请
    Heater usable with cooker, method of manufacturing the same and cooker 审中-公开
    加热器可用于炊具,制造方法和炊具

    公开(公告)号:US20100133259A1

    公开(公告)日:2010-06-03

    申请号:US12461588

    申请日:2009-08-17

    IPC分类号: H05B3/06

    摘要: Disclosed herein are a heater for cookers with high economical efficiency and improved performance, a method of manufacturing the same, and a cooker including the heater. The heater for cookers includes a heat-generator, and a heater body to house the heat-generator, a surface of the heater body having a prominence/depression pattern provided by surface-treating. The heater body is processed by sandblasting.

    摘要翻译: 本文公开了一种具有经济效率和性能提高的炊具加热器,其制造方法以及包括加热器的炊具。 用于炊具的加热器包括热发生器和用于容纳热发生器的加热器主体,加热器主体的表面具有通过表面处理提供的突出/凹陷图案。 加热器主体通过喷砂处理。

    Implantation method for doping semiconductor substrate
    6.
    发明授权
    Implantation method for doping semiconductor substrate 失效
    掺杂半导体衬底的植入方法

    公开(公告)号:US07696053B2

    公开(公告)日:2010-04-13

    申请号:US11614586

    申请日:2006-12-21

    申请人: Tae Woo Kim

    发明人: Tae Woo Kim

    IPC分类号: H01L21/426

    摘要: Embodiments relate to a semiconductor device that may include a gate stack formed on an upper portion of an active region in a semiconductor substrate, the gate stack including a gate insulating layer and a gate, a first shallow impurity region formed on both sides of the gate in the semiconductor substrate, a gate spacer layer formed on one side of the gate stack, and a second deep impurity region formed in the semiconductor substrate by using the gate spacer layer as a mask, in which the gate is formed by implanting p-type ions.

    摘要翻译: 实施例涉及一种半导体器件,其可以包括形成在半导体衬底中的有源区的上部上的栅极堆叠,栅堆叠包括栅极绝缘层和栅极,形成在栅极两侧的第一浅杂质区 在半导体衬底中,通过使用栅极间隔层作为掩模,形成在栅堆叠的一侧上的栅极间隔层和形成在半导体衬底中的第二深杂质区,其中栅极通过注入p型 离子。

    Backlight unit and liquid crystal display device
    7.
    发明授权
    Backlight unit and liquid crystal display device 失效
    背光单元和液晶显示装置

    公开(公告)号:US07520637B2

    公开(公告)日:2009-04-21

    申请号:US11261624

    申请日:2005-10-31

    IPC分类号: F21V29/00

    摘要: A backlight unit and an LCD device are provided, in which an LED (light emitting diode) is used as a light source of the backlight unit, and the heat generated from the LED is rapidly discharged to the outside. The backlight unit includes in one embodiment a cover bottom; at least one heat pipe located on the cover bottom; and a plurality of light sources located on the at least one heat pipe at fixed intervals.

    摘要翻译: 提供了背光单元和LCD装置,其中使用LED(发光二极管)作为背光单元的光源,并且从LED产生的热量被快速地排放到外部。 背光单元在一个实施例中包括盖底; 位于盖底部的至少一个热管; 以及以固定间隔位于所述至少一个热管上的多个光源。

    Method of Manufacturing Metal Interconnection
    8.
    发明申请
    Method of Manufacturing Metal Interconnection 有权
    制造金属互连的方法

    公开(公告)号:US20090061618A1

    公开(公告)日:2009-03-05

    申请号:US12200969

    申请日:2008-08-29

    申请人: Tae Woo Kim

    发明人: Tae Woo Kim

    IPC分类号: H01L21/768

    摘要: A method of manufacturing a semiconductor is provided. A fist metal layer can be formed on a lower structural layer, and an interlayer metal dielectric (IMD) layer can be formed on the first metal layer. A sacrificial oxide layer can be formed on the IMD layer, and a planarization process can be performed on the sacrificial oxide layer and the IMD layer to substantially eliminate a height difference of the IMD layer.

    摘要翻译: 提供一种制造半导体的方法。 可以在下结构层上形成第一金属层,并且可以在第一金属层上形成层间金属电介质(IMD)层。 可以在IMD层上形成牺牲氧化物层,并且可以对牺牲氧化物层和IMD层进行平坦化处理,以基本上消除IMD层的高度差。

    Connecting apparatus for three phase induction motor of electric vehicle
    9.
    发明授权
    Connecting apparatus for three phase induction motor of electric vehicle 有权
    电动汽车三相感应电动机连接装置

    公开(公告)号:US06840813B2

    公开(公告)日:2005-01-11

    申请号:US10747008

    申请日:2003-12-23

    申请人: Tae Woo Kim

    发明人: Tae Woo Kim

    摘要: A connecting apparatus for constituting a Y-connection of three phase windings of a three phase induction motor or supplying three phase power to the three phase windings includes a first connector and a second connector. The first connector has three terminals respectively extending from the three phase windings. The second connector has a Y-connection plug, which is coupled to the first connector and constitutes a Y-connection of the three terminals. The second connector also has slots for guiding a plug for supplying three phase power to the three terminals of the first connector. Accordingly, it is not required to separate the second connector from the first connector for supplying three phase power to the three phase windings of the induction motor.

    摘要翻译: 用于构成三相感应电动机的三相绕组的Y形连接或向三相绕组提供三相电力的连接装置包括第一连接器和第二连接器。 第一连接器具有分别从三相绕组延伸的三个端子。 第二连接器具有Y连接插头,其连接到第一连接器并构成三个端子的Y形连接。 第二连接器还具有用于引导用于向第一连接器的三个端子提供三相电力的插头的插槽。 因此,不需要将第二连接器与用于提供三相电力的第一连接器分离到感应电动机的三相绕组。

    Method for fabricating semiconductor transistor device
    10.
    发明授权
    Method for fabricating semiconductor transistor device 失效
    制造半导体晶体管器件的方法

    公开(公告)号:US06800529B2

    公开(公告)日:2004-10-05

    申请号:US10325120

    申请日:2002-12-20

    申请人: Tae Woo Kim

    发明人: Tae Woo Kim

    IPC分类号: H01L21336

    摘要: The present invention relates to a method for fabricating a semiconductor transistor device. The method comprises: forming a first conductive type well in a semiconductor substrate having a device isolation film formed thereon; implanting first conductive type impurity ions into the first conductive type well, so as to form a punch-through stopper region; implanting the first conductive type impurity ions into the upper portion of the resulting structure at fixed tilt angle and ion implantation energy, so as to form a channel region; forming a gate electrode including a gate insulating film on the semiconductor substrate; forming LDD regions in the semiconductor substrate at both sides of the gate electrode; forming an insulating spacer film on the side of the gate electrode; and forming source and drain regions in the semiconductor substrate at portions below the sides of the insulating spacer films.

    摘要翻译: 本发明涉及半导体晶体管器件的制造方法。 该方法包括:在其上形成有器件隔离膜的半导体衬底中形成第一导电类型阱; 将第一导电型杂质离子注入到第一导电型阱中,以形成穿通阻挡区; 以固定的倾斜角和离子注入能量将第一导电类杂质离子注入所得结构的上部,以形成沟道区; 在半导体衬底上形成包括栅极绝缘膜的栅电极; 在栅电极的两侧形成半导体衬底中的LDD区; 在栅极侧形成绝缘间隔膜; 以及在绝缘隔离膜的侧面下方的部分的半导体衬底中形成源区和漏区。