公开(公告)号：US20120097232A1

公开(公告)日：2012-04-26

申请号：US13382134

申请日：2010-07-06

申请人： Tae-Whan Kim ,  Joo-Hyung You ,  Jae-Hun Jung ,  Jae-Seok Yi ,  Won-Il Park

发明人： Tae-Whan Kim ,  Joo-Hyung You ,  Jae-Hun Jung ,  Jae-Seok Yi ,  Won-Il Park

IPC分类号： H01L31/075 ,  B82Y99/00

CPC分类号： H01L31/03529 ,  H01L31/035281 ,  Y02E10/50

摘要： A solar cell using a p-i-n nanowire that may generate light by absorbing solar light in a wide wavelength region efficiently without generating light loss and may be manufactured with a simplified process and low cost. The solar cell includes: a semiconductor layer formed of a semiconductor material; and a photoelectromotive layer including a semiconductor structure including a core-nanowire that extends long in an upward direction of the semiconductor layer and is formed of an intrinsic semiconductor material, and a shell-nanowire that is formed to surround a periphery of the core-nanowire and is formed of a semiconductor material, wherein the semiconductor material that is used for forming the semiconductor layer includes an n-type semiconductor material, or the semiconductor material that is used for forming the shell-nanowire includes a p-type semiconductor material, and the semiconductor material that is used for forming the semiconductor layer includes a p-type semiconductor material, and the semiconductor material that is used for forming the shell-nanowire includes an n-type semiconductor material.

摘要翻译： 使用p-i-n纳米线的太阳能电池，其可以通过在宽波长区域中有效吸收太阳光而不产生光损耗而产生光，并且可以以简化的工艺和低成本制造。 太阳能电池包括：由半导体材料形成的半导体层; 以及包含半导体结构的光电动势层，所述半导体结构包括在所述半导体层的向上方向上延伸并且由本征半导体材料形成的核 - 纳米线，并且形成为包围所述核 - 纳米线的周围的壳 - 纳米线 并且由半导体材料形成，其中用于形成半导体层的半导体材料包括n型半导体材料或用于形成壳 - 纳米线的半导体材料包括p型半导体材料，以及 用于形成半导体层的半导体材料包括p型半导体材料，用于形成壳 - 纳米线的半导体材料包括n型半导体材料。

公开(公告)号：US09059345B2

公开(公告)日：2015-06-16

申请号：US13382134

申请日：2010-07-06

申请人： Tae-Whan Kim ,  Joo-Hyung You ,  Jae-Hun Jung ,  Jae-Seok Yi ,  Won-Il Park

发明人： Tae-Whan Kim ,  Joo-Hyung You ,  Jae-Hun Jung ,  Jae-Seok Yi ,  Won-Il Park

IPC分类号： H01L31/0352

CPC分类号： H01L31/03529 ,  H01L31/035281 ,  Y02E10/50

摘要： A solar cell using a p-i-n nanowire that may generate light by absorbing solar light in a wide wavelength region efficiently without generating light loss and may be manufactured with a simplified process and low cost. The solar cell includes: a semiconductor layer formed of a semiconductor material; and a photoelectromotive layer including a semiconductor structure including a core-nanowire that extends long in an upward direction of the semiconductor layer and is formed of an intrinsic semiconductor material, and a shell-nanowire that is formed to surround a periphery of the core-nanowire and is formed of a semiconductor material, wherein the semiconductor material that is used for forming the semiconductor layer includes an n-type semiconductor material, or the semiconductor material that is used for forming the shell-nanowire includes a p-type semiconductor material, and the semiconductor material that is used for forming the semiconductor layer includes a p-type semiconductor material, and the semiconductor material that is used for forming the shell-nanowire includes an n-type semiconductor material.

摘要翻译： 使用p-i-n纳米线的太阳能电池，其可以通过在宽波长区域中有效吸收太阳光而不产生光损耗而产生光，并且可以以简化的工艺和低成本制造。 太阳能电池包括：由半导体材料形成的半导体层; 以及包含半导体结构的光电动势层，所述半导体结构包括在所述半导体层的向上方向上延伸并且由本征半导体材料形成的核 - 纳米线，并且形成为包围所述核 - 纳米线的周围的壳 - 纳米线 并且由半导体材料形成，其中用于形成半导体层的半导体材料包括n型半导体材料或用于形成壳 - 纳米线的半导体材料包括p型半导体材料，以及 用于形成半导体层的半导体材料包括p型半导体材料，用于形成壳 - 纳米线的半导体材料包括n型半导体材料。

公开(公告)号：US20120161106A1

公开(公告)日：2012-06-28

申请号：US13392176

申请日：2010-08-24

申请人： Tae-Whan Kim ,  Jae-Hun Jung ,  Dong-Ick Son ,  Jung-Min Lee ,  Hee-Yeon Yang ,  Won-Il Park

发明人： Tae-Whan Kim ,  Jae-Hun Jung ,  Dong-Ick Son ,  Jung-Min Lee ,  Hee-Yeon Yang ,  Won-Il Park

IPC分类号： H01L31/0256

CPC分类号： H01L31/035209 ,  H01L31/112 ,  H01L51/428

摘要： Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption.

摘要翻译： 提供了使用石墨烯薄膜和纳米颗粒的光电检测器（PD）及其制造方法。 PD包括具有通过使用气相碳（C）源的石墨烯沉积方法和形成在石墨烯薄膜上的纳米颗粒层形成的片状的石墨烯薄膜，并且被图案化以限定石墨烯薄膜的电极区域 膜，纳米颗粒层由不含基质材料的纳米颗粒形成。 PD具有使用石墨烯薄膜作为通道和电极的平面结构，并且使用纳米颗粒作为光伏材料（由于由紫外（UV）光引起的光电子运动能力而能够形成电子 - 空穴对）。 由于PD具有非常简单的结构，所以可以以低成本，高生产率制造PD。 此外，PD包括石墨烯薄膜以降低功耗。

公开(公告)号：US08598568B2

公开(公告)日：2013-12-03

申请号：US13392176

申请日：2010-08-24

申请人： Tae-Whan Kim ,  Jae-Hun Jung ,  Dong-Ick Son ,  Jung-Min Lee ,  Hee-Yeon Yang ,  Won-Il Park

发明人： Tae-Whan Kim ,  Jae-Hun Jung ,  Dong-Ick Son ,  Jung-Min Lee ,  Hee-Yeon Yang ,  Won-Il Park

IPC分类号： H01L31/0256

CPC分类号： H01L31/035209 ,  H01L31/112 ,  H01L51/428

摘要： Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption.

摘要翻译： 提供了使用石墨烯薄膜和纳米颗粒的光电检测器（PD）及其制造方法。 PD包括具有通过使用气相碳（C）源的石墨烯沉积方法和形成在石墨烯薄膜上的纳米颗粒层形成的片状的石墨烯薄膜，并且被图案化以限定石墨烯薄膜的电极区域 膜，纳米颗粒层由不含基质材料的纳米颗粒形成。 PD具有使用石墨烯薄膜作为通道和电极的平面结构，并且使用纳米颗粒作为光伏材料（由于由紫外（UV）光引起的光电子运动能力而能够形成电子 - 空穴对）。 由于PD具有非常简单的结构，所以可以以低成本，高生产率制造PD。 此外，PD包括石墨烯薄膜以降低功耗。

公开(公告)号：US07541623B2

公开(公告)日：2009-06-02

申请号：US10562006

申请日：2004-06-25

申请人： Gyu-Chul Yi ,  Won-Il Park

发明人： Gyu-Chul Yi ,  Won-Il Park

IPC分类号： H01L21/00

CPC分类号： H01L29/267 ,  B82Y10/00 ,  B82Y30/00 ,  C30B29/16 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02664 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/2003 ,  H01L33/08 ,  H01L33/26 ,  H01L33/28

摘要： A heterojunction structure composed of a p-type semiconductor thin film and n-type ZnO-based nanorods epitaxially grown thereon exhibits high luminescence efficiency property due to facilitated tunneling of electrons through the nano-sized junction and the use of ZnO having high exciton energy as a light emitting material, and thus it can be advantageously used in nano-devices such as LED, field effect transistor, photodetector, sensor, etc.

摘要翻译： 由p型半导体薄膜和外延生长的n型ZnO基纳米棒构成的异质结结构由于电子通过纳米尺度的结的隧道化以及使用具有高激子能的ZnO而具有高的发光效率特性 发光材料，因此可以有利地用于诸如LED，场效应晶体管，光电检测器，传感器等的纳米器件中。