摘要:
Provided may be a gate pattern, flash memory and methods of manufacturing and operating the same. A gate pattern may include a floating gate on a tunneling dielectric layer, an inter-gate dielectric layer on the floating gate, a first control gate on the inter-gate dielectric layer, and a second control gate on the inter-gate dielectric layer and spaced apart from the first control gate. Each of the control gates sets four states according to an application time of a program voltage applied to the control gates. Thus, one control gate may program 2-bit data.
摘要:
A display device, which includes a plurality of pixels; a data driver for outputting data signals to the pixels; a bias current outputting unit for outputting a bias current having a predetermined magnitude; a plurality of driving current outputting units for outputting driving currents to the pixels; and a first switch connected between the bias current outputting unit and the driving current outputting units for selecting one of the driving current outputting units to connect to the bias current outputting unit, wherein the magnitudes of the driving currents are substantially the same as a magnitude of the bias current.
摘要:
A non-volatile memory device includes a semiconductor substrate, first and second control gates, and first and second charge storage patterns. The semiconductor substrate includes a protruding active pin having a source region, a drain region and a channel region located between the source and drain regions. The first control gate is located on a first sidewall of the channel region, and the second control gate is located on a second sidewall of the channel region. The second control gate is separated from the first control gate. The first charge storage pattern is located between the first sidewall and the first control gate, and the second charge storage pattern is located between the second sidewall and the second control gate.
摘要:
A non-volatile memory device includes a semiconductor substrate, first and second control gates, and first and second charge storage patterns. The semiconductor substrate includes a protruding active pin having a source region, a drain region and a channel region located between the source and drain regions. The first control gate is located on a first sidewall of the channel region, and the second control gate is located on a second sidewall of the channel region. The second control gate is separated from the first control gate. The first charge storage pattern is located between the first sidewall and the first control gate, and the second charge storage pattern is located between the second sidewall and the second control gate.
摘要:
A non-volatile memory device includes a semiconductor substrate, first and second control gates, and first and second charge storage patterns. The semiconductor substrate includes a protruding active pin having a source region, a drain region and a channel region located between the source and drain regions. The first control gate is located on a first sidewall of the channel region, and the second control gate is located on a second sidewall of the channel region. The second second control gate is separated from the first control gate. The first charge storage pattern is located between the first sidewall and the first control gate, and the second charge storage pattern is located between the second sidewall and the second control gate.
摘要:
A charge pump for a DC-DC converter includes an input terminal receiving an input voltage, an output terminal outputting an output voltage, a plurality of charge pumping stages connected in series between the input terminal and the output terminal, and a voltage level shifter shifting voltage levels of first and second gate clock signals so that received first and second gate clock signals have a predetermined amplitude. Therefore, the charge pump can increase power efficiency by maximizing a magnitude of VGS. A DC-DC converter using the charge pump can also be applied to a portable device, for minimizing power consumption, and a method for improving power efficiency of the DC-DC converter is provided.
摘要:
A display device, which includes a plurality of pixels; a data driver for outputting data signals to the pixels; a bias current outputting unit for outputting a bias current having a predetermined magnitude; a plurality of driving current outputting units for outputting driving currents to the pixels; and a first switch connected between the bias current outputting unit and the driving current outputting units for selecting one of the driving current outputting units to connect to the bias current outputting unit, wherein the magnitudes of the driving currents are substantially the same as a magnitude of the bias current.
摘要:
A charge pump for a DC-DC converter includes an input terminal receiving an input voltage, an output terminal outputting an output voltage, a plurality of charge pumping stages connected in series between the input terminal and the output terminal, and a voltage level shifter shifting voltage levels of first and second gate clock signals so that received first and second gate clock signals have a predetermined amplitude. Therefore, the charge pump can increase power efficiency by maximizing a magnitude of VGS. A DC-DC converter using the charge pump can also be applied to a portable device, for minimizing power consumption, and a method for improving power efficiency of the DC-DC converter is provided.
摘要:
Provided are an electronic device and methods of fabricating the same, the electronic device include a device-substrate, a stacked structure, and an electrode. The stacked structure includes a graphene thin film between a first insulator and a second insulator. The electrode is disposed over the stacked structure.
摘要:
A solar cell using a p-i-n nanowire that may generate light by absorbing solar light in a wide wavelength region efficiently without generating light loss and may be manufactured with a simplified process and low cost. The solar cell includes: a semiconductor layer formed of a semiconductor material; and a photoelectromotive layer including a semiconductor structure including a core-nanowire that extends long in an upward direction of the semiconductor layer and is formed of an intrinsic semiconductor material, and a shell-nanowire that is formed to surround a periphery of the core-nanowire and is formed of a semiconductor material, wherein the semiconductor material that is used for forming the semiconductor layer includes an n-type semiconductor material, or the semiconductor material that is used for forming the shell-nanowire includes a p-type semiconductor material, and the semiconductor material that is used for forming the semiconductor layer includes a p-type semiconductor material, and the semiconductor material that is used for forming the shell-nanowire includes an n-type semiconductor material.