摘要:
A method of removing a silicon-containing hard polymeric material from an opening leading to a recessed feature during the plasma etching of said recessed feature into a carbon-containing layer in a semiconductor substrate. The method comprises the intermittent use of a cleaning step within a continuous etching process, where at least one fluorine-containing cleaning agent species is added to already present etchant species of said continuous etching process for a limited time period, wherein the length of time of each cleaning step ranges from about 5% to about 100% of the time length of an etch step which either precedes or follows said cleaning step.
摘要:
A high efficiency radio frequency (RF) impedance matching network containing an "L-type" inductor-capacitor (LC) circuit where the capacitor is a variable capacitor coupled from an input port to ground and the inductor is a variable inductance inductor coupled from the input port to an output port. A blocking capacitor is provided between the inductor and the output port and a ceramic capacitor is coupled in parallel across the variable capacitor. The impedance match is tuned by physically adjusting tuning elements of both the inductor and capacitor. The variable inductor contains an improved inductor tuning element that optimizes current flow in the tuning elements and inductor. To further improve the efficiency of the matching network, the assembly uses an improved enclosure interior finish and various circuit optimization techniques that reduce contributions to match loop resistance.
摘要:
A method and apparatus are provided for etching semiconductor and dielectric substrates through the use of plasmas based on mixtures of a first gas having the formula CaFb, and a second gas having the formula CxHyFz, wherein a/b≧⅔, and wherein x/z≧½. The mixtures may be used in low or medium density plasmas sustained in a magnetically enhanced reactive ion chamber to provide a process that exhibits excellent corner layer selectivity, photo resist selectivity, under layer selectivity, and profile and bottom CD control. The percentages of the first and second gas may be varied during etching to provide a plasma that etches undoped oxide films or to provide an etch stop on such films.
摘要翻译:提供了一种方法和装置,用于通过使用等离子体来蚀刻半导体和电介质基底,所述等离子体基于具有式C a B b B b的第一气体的混合物和第二气体 其中a / b> = 2/3,并且其中x / z> = 1/2。 混合物可以用于在磁增强反应离子室中维持的低或中等密度等离子体,以提供显示出优异的角层选择性,光致抗蚀剂选择性,底层选择性以及轮廓和底部CD控制的方法。 在蚀刻期间可以改变第一和第二气体的百分比,以提供蚀刻未掺杂的氧化物膜的等离子体或在这种膜上提供蚀刻停止。