公开(公告)号：US20100144095A1

公开(公告)日：2010-06-10

申请号：US12632006

申请日：2009-12-07

申请人： Taisuke KOROKU ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

发明人： Taisuke KOROKU ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

IPC分类号： H01L21/50

CPC分类号： H01L21/6836 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3135 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/94 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/16 ,  H01L2224/18 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2224/03

摘要： First, a trench formed in parts of a semiconductor wafer, a sealing film and others corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entirety including the separated silicon substrates from being easily warped.

摘要翻译： 首先，形成在半导体晶片的一部分中的沟槽，密封膜等与切割街道及其两侧对应的沟槽。 在这种状态下，通过形成沟槽将半导体晶片分离成硅衬底。 然后，在包括沟槽的内部的每个硅衬底的底表面上形成树脂保护膜。 在这种情况下，将半导体晶片分离成硅基板。 然而，支撑板通过粘合剂层固定在柱状电极和密封膜的上表面上。 因此，当形成树脂保护膜时，可以防止包含分离的硅衬底的整体容易翘曲。

公开(公告)号：US08154133B2

公开(公告)日：2012-04-10

申请号：US12412576

申请日：2009-03-27

申请人： Taisuke Koroku ,  Takeshi Wakabayashi ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

发明人： Taisuke Koroku ,  Takeshi Wakabayashi ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/3114 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3135 ,  H01L24/11 ,  H01L24/12 ,  H01L24/27 ,  H01L2221/6834 ,  H01L2221/68372 ,  H01L2221/68377 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/11 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/94 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/10157 ,  H01L2924/10158 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3512 ,  H01L2924/00

摘要： A low dielectric constant film/wiring line stack structure made up of a stack of low dielectric constant films and wiring lines is provided in a region on the upper surface of the semiconductor substrate except for the peripheral part of this surface. The peripheral side surface of the low dielectric constant film/wiring line stack structure is covered with a sealing film. This provides a structure in which the low dielectric constant films do not easily come off. In this case, a lower protective film is provided on the lower surface of a silicon substrate to protect this lower surface against cracks.

摘要翻译： 在半导体基板的上表面的除了该表面的周边部分之外的区域中设置由低介电常数膜和布线组成的低介电常数膜/布线层叠结构。 低介电常数薄膜/布线层叠结构的周边侧表面被密封膜覆盖。 这提供了低介电常数膜不容易脱落的结构。 在这种情况下，在硅基板的下表面上设置下保护膜，以保护该下表面免受裂纹。

公开(公告)号：US20100144096A1

公开(公告)日：2010-06-10

申请号：US12632033

申请日：2009-12-07

申请人： Taisuke Koroku ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

发明人： Taisuke Koroku ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

IPC分类号： H01L21/60

CPC分类号： H01L21/561 ,  H01L21/6836 ,  H01L23/3114 ,  H01L23/3135 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2924/14 ,  H01L2924/19041

摘要： First, a trench is formed in parts of a semiconductor wafer, a sealing film and other elements corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entire workpiece including the separated silicon substrates from being easily warped.

公开(公告)号：US20090243097A1

公开(公告)日：2009-10-01

申请号：US12412576

申请日：2009-03-27

申请人： Taisuke KOROKU ,  Takeshi Wakabayashi ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

发明人： Taisuke KOROKU ,  Takeshi Wakabayashi ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

IPC分类号： H01L23/488 ,  H01L21/762

CPC分类号： H01L23/3114 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3135 ,  H01L24/11 ,  H01L24/12 ,  H01L24/27 ,  H01L2221/6834 ,  H01L2221/68372 ,  H01L2221/68377 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/11 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/94 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/10157 ,  H01L2924/10158 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3512 ,  H01L2924/00

摘要： A low dielectric constant film/wiring line stack structure made up of a stack of low dielectric constant films and wiring lines is provided in a region on the upper surface of the semiconductor substrate except for the peripheral part of this surface. The peripheral side surface of the low dielectric constant film/wiring line stack structure is covered with a sealing film. This provides a structure in which the low dielectric constant films do not easily come off. In this case, a lower protective film is provided on the lower surface of a silicon substrate to protect this lower surface against cracks.

摘要翻译： 在半导体基板的上表面的除了该表面的周边部分之外的区域中设置由低介电常数膜和布线组成的低介电常数膜/布线层叠结构。 低介电常数薄膜/布线层叠结构的周边侧表面被密封膜覆盖。 这提供了低介电常数膜不容易脱落的结构。 在这种情况下，在硅基板的下表面上设置下保护膜，以保护该下表面免受裂纹。

公开(公告)号：US07863750B2

公开(公告)日：2011-01-04

申请号：US12507188

申请日：2009-07-22

申请人： Junji Shiota ,  Taisuke Koroku ,  Nobumitsu Fujii ,  Osamu Kuwabara ,  Osamu Okada

发明人： Junji Shiota ,  Taisuke Koroku ,  Nobumitsu Fujii ,  Osamu Kuwabara ,  Osamu Okada

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/053 ,  H01L23/12

CPC分类号： H01L21/78 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/02331 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014

摘要： In this manufacturing method of a semiconductor device, after a sealing film is applied over an entire surface of a semiconductor wafer and hardened, a second groove for forming a side-section protective film is formed in the sealing film and on the top surface side of the semiconductor wafer. In other words, the sealing film is formed in a state where a groove that causes strength reduction has not been formed on the top surface side of the semiconductor wafer. Since the second groove is formed on the top surface side of the semiconductor wafer after the sealing film is formed, the semiconductor wafer is less likely to warp when the sealing film, made of liquid resin, is hardened.

摘要翻译： 在这种半导体装置的制造方法中，在半导体晶片的整个表面上施加了密封膜并硬化后，在密封膜中形成用于形成侧部保护膜的第二沟槽，并且在顶部表面侧 半导体晶片。 换句话说，密封膜形成为在半导体晶片的顶面侧未形成导致强度降低的槽的状态。 由于在形成密封膜之后在半导体晶片的顶表面侧形成第二凹槽，所以当由液体树脂制成的密封膜硬化时，半导体晶片不太可能翘曲。

公开(公告)号：US5367179A

公开(公告)日：1994-11-22

申请号：US975282

申请日：1992-11-12

申请人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya ,  Ichiro Ohno ,  Hiromitsu Ishii ,  Kunihiro Matsuda ,  Junji Shiota

发明人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya ,  Ichiro Ohno ,  Hiromitsu Ishii ,  Kunihiro Matsuda ,  Junji Shiota

IPC分类号： H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/49 ,  H01L29/786 ,  H01L23/48

CPC分类号： H01L21/0217 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/3185 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78663

摘要： A thin-film transistor comprises a gate electrode formed on an insulating substrate, a gate insulating film covering the gate electrode and the insulating substrate, an i-type semiconductor layer formed on the gate insulating film, and a source electrode and a drain electrode electrically connected to two ends of the i-type semiconductor layer, respectively. The gate electrode is made of aluminum alloy containing high-melting-point metal such as Ti and Ta and oxygen or nitrogen or both.

摘要翻译： 薄膜晶体管包括形成在绝缘基板上的栅极电极，覆盖栅极电极和绝缘基板的栅极绝缘膜，形成在栅极绝缘膜上的i型半导体层，以及电极和漏极电极 分别连接到i型半导体层的两端。 栅电极由含有Ti和Ta等高熔点金属和氧或氮的铝合金构成。

公开(公告)号：US4975168A

公开(公告)日：1990-12-04

申请号：US339474

申请日：1989-04-17

申请人： Ichiro Ohno ,  Junji Shiota ,  Hidetaka Uchiumi

发明人： Ichiro Ohno ,  Junji Shiota ,  Hidetaka Uchiumi

IPC分类号： C23C14/08 ,  C23C14/00 ,  C23C14/34 ,  C23C14/54 ,  H01J37/32

CPC分类号： H01J37/3244 ,  C23C14/0042 ,  C23C14/547

摘要： A method of forming a transparent conductive thin film by sputtering includes the step of placing a target consisting of a conductive oxide material and a substrate on which the thin film is to be formed in a pressure vessel, the step of supplying argon gas and oxygen gas after the pressure vessel is substantially evacuated, the step of supplying a sputtering current to the target to maintain a discharge state, the step of detecting the partial pressure of oxygen in the gas mixture in the pressure chamber, and the step of controlling the flow rate of oxygen gas. The flow rate of the oxygen gas is controlled by a control unit such that the value of the partial pressure of oxygen which is detected in the partial pressure detection step is always kept constant.

摘要翻译： 通过溅射形成透明导电薄膜的方法包括将由导电氧化物材料构成的靶和在其上形成薄膜的基板放置在压力容器中的步骤，提供氩气和氧气的步骤 在压力容器基本抽真空之后，向靶提供溅射电流以维持放电状态的步骤，检测压力室中的气体混合物中的氧分压的步骤和控制流量的步骤 的氧气。 氧气的流量由控制单元控制，使得在分压检测步骤中检测到的氧的分压值总是保持恒定。

公开(公告)号：US4568208A

公开(公告)日：1986-02-04

申请号：US662910

申请日：1984-10-19

申请人： Takayuki Iwase ,  Junji Shiota ,  Kazuo Nakamura

发明人： Takayuki Iwase ,  Junji Shiota ,  Kazuo Nakamura

IPC分类号： B41J7/92 ,  B41J7/94 ,  B41J9/26 ,  B41J23/02 ,  B41J23/04 ,  B41J35/10

CPC分类号： B41J9/26 ,  B41J7/92 ,  B41J7/94

摘要： In a printer, a printing clutch and a hammer impact changeover mechanism are controlled through a control member by one electromagnet, in such a manner that in response to a printing signal the clutch is engaged through the control member by the electromagnet to start one printing cycle and, in the second half of the printing cycle, the electromagnet is operated to enable a hammer impact change-over mechanism with the aid of the control member. The energizing forces of two weak spring members are applied to a cam follower member operatively coupled to the printing hammer so that when a printing type element having a large printing surface is selected, the energizing forces of the two spring members are utilized to allow the printing hammer to strike the type element strongly, and when a type element having a small printing surface is selected, the energizing force of only one of the two spring member is utilized to allow the printing hammer to strike the type element less strongly.

摘要翻译： 在打印机中，打印离合器和锤击切换机构通过一个电磁体通过控制部件被控制，使得响应于打印信号，离合器通过电磁铁与控制部件接合以开始一个打印周期 并且在打印周期的后半部分中，电磁铁被操作以借助控制构件实现锤击冲击转换机构。 两个弱弹簧构件的通电力被施加到可操作地联接到打印锤的凸轮随动件，使得当选择具有大的印刷表面的印刷型元件时，两个弹簧构件的通电力被用于允许印刷 锤子强烈地冲击型元件，并且当选择具有小打印表面的型元件时，仅使用两个弹簧元件中的一个的激励力来使打印锤不太强烈地撞击型元件。

公开(公告)号：US08564128B2

公开(公告)日：2013-10-22

申请号：US13225693

申请日：2011-09-06

申请人： Junji Shiota

发明人： Junji Shiota

IPC分类号： H01L23/48

CPC分类号： H01L24/03 ,  H01L23/3114 ,  H01L23/3192 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/03462 ,  H01L2224/0362 ,  H01L2224/0401 ,  H01L2224/05569 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor substrate having a connection pad, an external connection electrode provided on the semiconductor substrate to be connected to the connection pad, and a sealing film provided to cover the external connection electrode, wherein an opening is provided in the sealing film to expose a center of the upper surface of the external connection electrode, and the sealing film is provided to cover an outer peripheral part of the upper surface of the external connection electrode.

摘要翻译： 半导体器件包括具有连接焊盘的半导体衬底，设置在要连接到连接焊盘的半导体衬底上的外部连接电极和设置成覆盖外部连接电极的密封膜，其中在密封膜中设置有开口 露出外部连接电极的上表面的中心，并且设置密封膜以覆盖外部连接电极的上表面的外周部分。

公开(公告)号：US20080073785A1

公开(公告)日：2008-03-27

申请号：US11903677

申请日：2007-09-24

申请人： Junji Shiota

发明人： Junji Shiota

IPC分类号： H01L23/488 ,  H01L21/44

CPC分类号： H01L23/3114 ,  H01L21/561 ,  H01L21/6715 ,  H01L21/67207 ,  H01L21/67745 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/14

摘要： A semiconductor device includes a plurality of wiring lines which are provided on an upper side of a semiconductor substrate and which have connection pad portions, Columnar electrodes are provided on the connection pad portions of the wiring lines. A first sealing film is provided around the columnar electrodes on the upper side of the semiconductor substrate and on the wiring lines. A second sealing film is provided on the first sealing film. The first sealing film is made of a resin in which fillers are not mixed, and the second sealing film is made of a material in which fillers are mixed in a resin.

摘要翻译： 半导体器件包括多个布线，它们设置在半导体衬底的上侧，并具有连接焊盘部分，在电线的连接焊盘部分上设置有柱状电极。 在半导体衬底的上侧和布线的柱状电极周围设置第一密封膜。 在第一密封膜上设置第二密封膜。 第一密封膜由不混合填料的树脂制成，第二密封膜由树脂中填充剂混合的材料制成。