公开(公告)号：US20110215370A1

公开(公告)日：2011-09-08

申请号：US12873753

申请日：2010-09-01

申请人： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue ,  Kazufumi Shiozawa ,  Takayoshi Fujii

发明人： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue ,  Kazufumi Shiozawa ,  Takayoshi Fujii

IPC分类号： H01L33/26

CPC分类号： H01L33/20 ,  H01L33/46

摘要： According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.

摘要翻译： 根据一个实施例，提供了具有高光提取效率的半导体发光器件。 半导体发光器件包括透光衬底; 形成在所述透光基板的顶面侧上方或上方的第一导电型氮化物半导体层; 形成在第一导电型氮化物半导体层的顶面上的由氮化物半导体制成的有源层; 形成在有源层的顶面上的第二导电类型的氮化物半导体层; 介电层，其形成在所述透光性基板的底面上，折射率低于所述透光性基板的折射率; 以及形成在电介质层的底面上的金属层。 并且透光基板和电介质层之间的界面是不平坦的面，并且介电层和金属层之间的界面是平坦的面。

公开(公告)号：US08242532B2

公开(公告)日：2012-08-14

申请号：US12873753

申请日：2010-09-01

申请人： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue ,  Kazufumi Shiozawa ,  Takayoshi Fujii

发明人： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue ,  Kazufumi Shiozawa ,  Takayoshi Fujii

IPC分类号： H01L33/26

CPC分类号： H01L33/20 ,  H01L33/46

摘要： According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.

摘要翻译： 根据一个实施例，提供了具有高光提取效率的半导体发光器件。 半导体发光器件包括透光衬底; 形成在所述透光基板的顶面侧上方或上方的第一导电型氮化物半导体层; 形成在第一导电型氮化物半导体层的顶面上的由氮化物半导体制成的有源层; 形成在有源层的顶面上的第二导电类型的氮化物半导体层; 介电层，其形成在所述透光性基板的底面上，折射率低于所述透光性基板的折射率; 以及形成在电介质层的底面上的金属层。 并且透光基板和电介质层之间的界面是不平坦的面，并且介电层和金属层之间的界面是平坦的面。

公开(公告)号：US08188510B2

公开(公告)日：2012-05-29

申请号：US12873753

申请日：2010-09-01

申请人： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue ,  Kazufumi Shiozawa ,  Takayoshi Fujii

发明人： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue ,  Kazufumi Shiozawa ,  Takayoshi Fujii

IPC分类号： H01L33/26

摘要： According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.

公开(公告)号：US08643044B2

公开(公告)日：2014-02-04

申请号：US13222912

申请日：2011-08-31

申请人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/42

摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.

摘要翻译： 根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。 主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。 第一半导体层具有第一和第二部分。 发光层设置在第二部分上。 第二半导体层设置在发光层上。 第一电极设置在第一部分上。 第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。 焊盘层连接到第二电极。 焊盘层的透射率低于第二电极的透射率。 第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

公开(公告)号：US20120056220A1

公开(公告)日：2012-03-08

申请号：US13226045

申请日：2011-09-06

申请人： Taisuke SATO ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Taisuke SATO ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/60

CPC分类号： H01L33/007 ,  H01L33/46

摘要： According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.

摘要翻译： 根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。 第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。 在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。 在第一电介质层，第二电介质层和衬底上形成第一半导体层。 第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。

公开(公告)号：US08395263B2

公开(公告)日：2013-03-12

申请号：US13029462

申请日：2011-02-17

申请人： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L23/48

CPC分类号： H01L33/60 ,  H01L33/30 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/29083 ,  H01L2224/29099 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first, a second and a third conductive layer. The stacked structural body includes first and second semiconductors and a light emitting layer provided therebetween. The second semiconductor layer is disposed between the first conductive layer and the light emitting layer. The first conductive layer is transparent. The first conductive layer has a first major surface on a side opposite to the second semiconductor layer. The second conductive layer is in contact with the first major surface. The third conductive layer is in contact with the first major surface and has a reflectance higher than a reflectance of the second conductive layer. The third conductive layer includes an extending part extending in parallel to the first major surface. At least a portion of the extending part is not covered by the second conductive layer.

摘要翻译： 根据一个实施例，半导体发光器件包括层叠结构体，第一，第二和第三导电层。 堆叠结构体包括第一和第二半导体以及设置在它们之间的发光层。 第二半导体层设置在第一导电层和发光层之间。 第一导电层是透明的。 第一导电层在与第二半导体层相对的一侧具有第一主表面。 第二导电层与第一主表面接触。 第三导电层与第一主表面接触并且具有高于第二导电层的反射率的反射率。 第三导电层包括平行于第一主表面延伸的延伸部分。 延伸部分的至少一部分不被第二导电层覆盖。

公开(公告)号：US20120032213A1

公开(公告)日：2012-02-09

申请号：US13029462

申请日：2011-02-17

申请人： Taisuke SATO ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Taisuke SATO ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L33/30 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/29083 ,  H01L2224/29099 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first, a second and a third conductive layer. The stacked structural body includes first and second semiconductors and a light emitting layer provided therebetween. The second semiconductor layer is disposed between the first conductive layer and the light emitting layer. The first conductive layer is transparent. The first conductive layer has a first major surface on a side opposite to the second semiconductor layer. The second conductive layer is in contact with the first major surface. The third conductive layer is in contact with the first major surface and has a reflectance higher than a reflectance of the second conductive layer. The third conductive layer includes an extending part extending in parallel to the first major surface. At least a portion of the extending part is not covered by the second conductive layer.

摘要翻译： 根据一个实施例，半导体发光器件包括层叠结构体，第一，第二和第三导电层。 堆叠结构体包括第一和第二半导体以及设置在它们之间的发光层。 第二半导体层设置在第一导电层和发光层之间。 第一导电层是透明的。 第一导电层在与第二半导体层相对的一侧具有第一主表面。 第二导电层与第一主表面接触。 第三导电层与第一主表面接触并且具有高于第二导电层的反射率的反射率。 第三导电层包括平行于第一主表面延伸的延伸部分。 延伸部分的至少一部分不被第二导电层覆盖。

公开(公告)号：US20120061713A1

公开(公告)日：2012-03-15

申请号：US13222912

申请日：2011-08-31

申请人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/42

CPC分类号： H01L33/42

摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.

摘要翻译： 根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。 主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。 第一半导体层具有第一和第二部分。 发光层设置在第二部分上。 第二半导体层设置在发光层上。 第一电极设置在第一部分上。 第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。 焊盘层连接到第二电极。 焊盘层的透射率低于第二电极的透射率。 第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

公开(公告)号：US08441023B2

公开(公告)日：2013-05-14

申请号：US13226045

申请日：2011-09-06

申请人： Taisuke Sato ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Taisuke Sato ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L33/46

摘要： According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.

摘要翻译： 根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。 第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。 在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。 在第一电介质层，第二电介质层和衬底上形成第一半导体层。 第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。

公开(公告)号：US20110215351A1

公开(公告)日：2011-09-08

申请号：US12875822

申请日：2010-09-03

申请人： Shigeya Kimura ,  Hajime Nago ,  Toshiyuki Oka ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Shinya Nunoue

发明人： Shigeya Kimura ,  Hajime Nago ,  Toshiyuki Oka ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Shinya Nunoue

IPC分类号： H01L33/32 ,  H01L33/30

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01S5/3216 ,  H01S5/34333

摘要： According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness tb of the barrier layer is 10 nanometers or less.

摘要翻译： 根据一个实施例，半导体发光器件包括包括氮化物半导体的n型半导体层，包括氮化物半导体的p型半导体层，发光部分和层叠体。 发光部分设置在n型和p型半导体层之间，并且包括阻挡层和阱层。 阱层与阻挡层堆叠。 所述层叠体设置在所述发光部和所述n型半导体层之间，并且包括第一层和第二层。 第二层与第一层堆叠。 平均层叠体的组成比高于发光部的平均In组成比的0.4倍。 阻挡层的层厚度tb为10纳米以下。