公开(公告)号：US20250046753A1

公开(公告)日：2025-02-06

申请号：US18363096

申请日：2023-08-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Wei Wu ,  Ying-Ching Shih

IPC: H01L25/065 ,  H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L25/00

Abstract: A method of manufacturing a semiconductor device, the method includes bonding a first die and a second die to a first side of a wafer, wherein after bonding the first die and the second die to the first side of the wafer, a gap is disposed between the first die and the second die, wherein a first portion of the gap has a first width that is larger than a second width of a second portion of the gap, depositing a third dielectric layer on top surfaces and sidewalls of the first die and the second die, as well as on a bottom surface within the gap, forming a molding material over the third dielectric layer to fill the gap, and performing a planarization process to expose top surfaces of the first die and the second die.

公开(公告)号：US11824040B2

公开(公告)日：2023-11-21

申请号：US16805865

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Wei Wu ,  Szu-Wei Lu ,  Ying-Ching Shih

IPC: H01L25/065 ,  H01L23/538 ,  H01L23/31 ,  H01L23/00 ,  H01L21/48 ,  H01L21/768

CPC classification number: H01L25/0655 ,  H01L21/4857 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/16 ,  H01L2224/16227

Abstract: A package component for carrying a device package and an insulating layer thereon includes a molding layer, first and second redistribution structures disposed on two opposite sides of the molding layer, a semiconductor die, and a through interlayer via (TIV). A hardness of the molding layer is greater than that of the insulating layer that covers the device package. The device package is mounted on the second redistribution structure, and the insulating layer is disposed on the second redistribution structure opposite to the molding layer. The semiconductor die is embedded in the molding layer and electrically coupled to the device package through the second redistribution structure. The TIV penetrates through the molding layer to connect the first and the second redistribution structure. An electronic device and a manufacturing method thereof are also provided.

公开(公告)号：US20220199465A1

公开(公告)日：2022-06-23

申请号：US17676627

申请日：2022-02-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Wei Wu ,  Ying-Ching Shih ,  Szu-Wei Lu ,  Jing-Cheng Lin ,  Long Hua Lee

IPC: H01L21/768 ,  H01L21/56 ,  H01L23/31 ,  H01L23/367 ,  H01L23/00

Abstract: A method of forming a semiconductor device includes attaching a metal foil to a carrier, the metal foil being pre-made prior to attaching the metal foil; forming a conductive pillar on a first side of the metal foil distal the carrier; attaching a semiconductor die to the first side of the metal foil; forming a molding material around the semiconductor die and the conductive pillar; and forming a redistribution structure over the molding material.

公开(公告)号：US11289424B2

公开(公告)日：2022-03-29

申请号：US16655260

申请日：2019-10-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Wei Wu ,  Chen-Hua Yu ,  Kuo-Chung Yee ,  Szu-Wei Lu ,  Ying-Ching Shih

IPC: H01L23/495 ,  H01L23/538 ,  H01L23/31 ,  H01L23/00 ,  H01L25/00 ,  H01L21/56 ,  H01L21/48 ,  H01L25/065

Abstract: Provided are a package and a method of manufacturing the same. The package includes a first die, a second die, a bridge structure, an encapsulant, and a redistribution layer (RDL) structure. The first die and the second die are disposed side by side. The bridge structure is disposed over the first die and the second die to electrically connect the first die and the second die. The encapsulant laterally encapsulates the first die, the second die, and the bridge structure. The RDL structure is disposed over a backside of the bridge structure and the encapsulant. The RDL structure includes an insulating structure and a conductive pattern, the conductive pattern is disposed over the insulating structure and extending through the insulating structure and a substrate of the bridge structure, so as to form at least one through via in the substrate of the bridge structure.

公开(公告)号：US11164855B2

公开(公告)日：2021-11-02

申请号：US16572619

申请日：2019-09-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Weiming Chris Chen ,  Chi-Hsi Wu ,  Chih-Wei Wu ,  Kuo-Chiang Ting ,  Szu-Wei Lu ,  Shang-Yun Hou ,  Ying-Ching Shih ,  Hsien-Ju Tsou ,  Cheng-Chieh Li

IPC: H01L23/32 ,  H01L25/18 ,  H01L25/00 ,  H01L23/00 ,  H01L21/82 ,  H01L23/48 ,  H01L21/56 ,  H01L23/367

Abstract: A package structure includes a circuit element, a first semiconductor die, a second semiconductor die, a heat dissipating element, and an insulating encapsulation. The first semiconductor die and the second semiconductor die are located on the circuit element. The heat dissipating element connects to the first semiconductor die, and the first semiconductor die is between the circuit element and the heat dissipating element, where a sum of a first thickness of the first semiconductor die and a third thickness of the heat dissipating element is substantially equal to a second thickness of the second semiconductor die. The insulating encapsulation encapsulates the first semiconductor die, the second semiconductor die and the heat dissipating element, wherein a surface of the heat dissipating element is substantially leveled with the insulating encapsulation.

公开(公告)号：US11152330B2

公开(公告)日：2021-10-19

申请号：US16385242

申请日：2019-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Chieh Li ,  Pu Wang ,  Chih-Wei Wu ,  Ying-Ching Shih ,  Szu-Wei Lu

IPC: H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L25/065 ,  H01L23/367 ,  H01L25/00

Abstract: A method for forming a semiconductor package structure includes stacking chips to form a chip stack over an interposer. The method also includes disposing a semiconductor die over the interposer. The method also includes filling a first encapsulating layer between the chips and surrounding the chip stack and the semiconductor die. The method also includes forming a second encapsulating layer covering the chip stack and the semiconductor die. The first encapsulating layer fills the gap between the chip stack and the semiconductor die.

公开(公告)号：US10510732B2

公开(公告)日：2019-12-17

申请号：US15854755

申请日：2017-12-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsien-Ju Tsou ,  Chih-Wei Wu ,  Jing-Cheng Lin ,  Pu Wang ,  Szu-Wei Lu ,  Ying-Ching Shih

IPC: H01L25/10 ,  H01L25/00 ,  H01L21/48 ,  H01L23/00 ,  H01L23/538

Abstract: Provided are a PoP device and a method of manufacturing the same. The PoP device includes a first package structure and a second package structure. The first package structure includes a die, a through integrated fan-out via (TIV), an encapsulant, and a film. The TIV is aside the die. The encapsulant encapsulates sidewalls of the die and sidewalls of the TIV. The film is over the TIV and the encapsulant, and aside the die. The second package structure is connected to the first package structure through a connector. The connector penetrates through the film to electrically connected to the TIV.

公开(公告)号：US20190103387A1

公开(公告)日：2019-04-04

申请号：US15854755

申请日：2017-12-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsien-Ju Tsou ,  Chih-Wei Wu ,  Jing-Cheng Lin ,  Pu Wang ,  Szu-Wei Lu ,  Ying-Ching Shih

IPC: H01L25/10 ,  H01L25/00 ,  H01L21/48 ,  H01L23/00 ,  H01L23/538

Abstract: Provided are a PoP device and a method of manufacturing the same. The PoP device includes a first package structure and a second package structure. The first package structure includes a die, a through integrated fan-out via (TIV), an encapsulant, and a film. The TIV is aside the die. The encapsulant encapsulates sidewalls of the die and sidewalls of the TIV. The film is over the TIV and the encapsulant, and aside the die. The second package structure is connected to the first package structure through a connector. The connector penetrates through the film to electrically connected to the TIV.

公开(公告)号：US20190096851A1

公开(公告)日：2019-03-28

申请号：US15716506

申请日：2017-09-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hang Liao ,  Chih-Wei Wu ,  Jing-Cheng Lin ,  Szu-Wei Lu ,  Ying-Ching Shih

IPC: H01L25/065 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L21/568 ,  H01L21/56 ,  H01L21/6835 ,  H01L23/3128 ,  H01L25/065 ,  H01L2221/68345

Abstract: A package structure and a method of manufacturing the same are provided. The package structure includes a first die, a second die, a first encapsulant, a bridge, an underfill layer and a RDL structure. The first die and the second die are placed side by side. The first encapsulant encapsulates sidewalls of the first die and sidewalls of the second die. The bridge electrically connects the first die and the second die through two conductive bumps. The underfill layer fills the space between the bridge and the first die, between the bridge and the second die, and between the bridge and a portion of the first encapsualnt. The RDL structure is located over the bridge and electrically connected to the first die and the second die though a plurality of TIVs. The bottom surfaces of the two conductive bumps are level with a bottom surface of the underfill layer.

公开(公告)号：US20180197826A1

公开(公告)日：2018-07-12

申请号：US15911765

申请日：2018-03-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Wei Wu ,  Ying-Ching Shih ,  Szu-Wei Lu ,  Jing-Cheng Lin

IPC: H01L23/00 ,  H01L25/065 ,  H01L23/48

CPC classification number: H01L23/562 ,  H01L23/145 ,  H01L23/147 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/10135 ,  H01L2224/11464 ,  H01L2224/13012 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13664 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/16235 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81007 ,  H01L2224/81139 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L2225/06582 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1437 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/37001 ,  H01L2924/014 ,  H01L2924/00012

Abstract: Some embodiments of the present disclosure relate to an integrated circuit. The integrated circuit has a first semiconductor die and a second semiconductor die. The first semiconductor die is bonded to the second semiconductor die by one or more bonding structures. A first plurality of support structures are disposed between the first semiconductor die and the second semiconductor die. The first plurality of support structures are spaced apart from the one or more bonding structures. The first plurality of support structures are configured to hold together the first semiconductor die and the second semiconductor die.