公开(公告)号：US20210288029A1

公开(公告)日：2021-09-16

申请号：US17333120

申请日：2021-05-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sin-Yao Huang ,  Chun-Chieh Chuang ,  Ching-Chun Wang ,  Sheng-Chau Chen ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Yung-Lung Lin

IPC: H01L25/065 ,  H01L23/498 ,  H01L25/00 ,  H01L27/146 ,  H01L23/00

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a first plurality of interconnects arranged within a first inter-level dielectric (ILD) structure on a first substrate, and a second plurality of interconnects arranged within a second ILD structure between the first ILD structure and a second substrate. A bonding structure is disposed within a recess extending through the second substrate. A connector structure is vertically between the first plurality of interconnects and the second plurality of interconnects. The second plurality of interconnects include a first interconnect directly contacting the bonding structure. The second plurality of interconnects also include one or more extensions extending from directly below the first interconnect to laterally outside of the first interconnect and directly above the connector structure, as viewed along a cross-sectional view.

公开(公告)号：US20190244990A1

公开(公告)日：2019-08-08

申请号：US16387989

申请日：2019-04-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-I Hsu ,  Feng-Chi Hung ,  Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image-sensor device includes a substrate including a pixel region and a logic region. A logic transistor is disposed in the logic region and is surrounded by a logic isolation feature. A radiation-sensing region is disposed in the pixel region of the substrate. An epitaxial pixel isolation feature is disposed in the pixel region and surrounds the radiation-sensing region. A doped region with a same doping polarity as the radiation-sensing region is located between a bottom of the radiation-sensing region and the back surface of the substrate. The epitaxial pixel isolation feature is in direct contact with the doped region. The doped region extends continuously under the pixel region and the logic region. The epitaxial pixel isolation feature is in direct contact with the doped region, and the logic isolation feature is spaced apart from the doped region.

公开(公告)号：US09728521B2

公开(公告)日：2017-08-08

申请号：US14806888

申请日：2015-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Cheng Tsai ,  Chun-Chieh Chuang ,  Ching-Chun Wang ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Chih-Hui Huang ,  Yan-Chih Lu ,  Ju-Shi Chen

IPC: H01L25/065 ,  H01L23/528 ,  H01L23/532 ,  H01L25/00 ,  H01L23/00 ,  H01L23/522 ,  H01L21/768 ,  H01L21/321 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L25/0657 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31111 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L24/80 ,  H01L24/89 ,  H01L25/50 ,  H01L2224/05025 ,  H01L2224/05147 ,  H01L2224/08145 ,  H01L2224/215 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/94 ,  H01L2225/06524 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0104 ,  H01L2924/01072 ,  H01L2224/80

Abstract: An integrated circuit (IC) using a copper-alloy based hybrid bond is provided. The IC comprises a pair of semiconductor structures vertically stacked upon one another. The pair of semiconductor structures comprise corresponding dielectric layers and corresponding metal features arranged in the dielectric layers. The metal features comprise a copper alloy having copper and a secondary metal. The IC further comprises a hybrid bond arranged at an interface between the semiconductor structures. The hybrid bond comprises a first bond bonding the dielectric layers together and a second bond bonding the metal features together. The second bond comprises voids arranged between copper grains of the metal features and filled by the secondary metal. A method for bonding a pair of semiconductor structures together using the copper-alloy based hybrid bond is also provided.

公开(公告)号：US20180033812A1

公开(公告)日：2018-02-01

申请号：US15718061

申请日：2017-09-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-I Hsu ,  Feng-Chi Hung ,  Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image-sensor device includes a substrate including a pixel region and a logic region. A logic transistor is disposed in the logic region and is surrounded by a logic isolation feature. A radiation-sensing region is disposed in the pixel region of the substrate. An epitaxial pixel isolation feature is disposed in the pixel region and surrounds the radiation-sensing region. A doped region with a same doping polarity as the radiation-sensing region is located between a bottom of the radiation-sensing region and the back surface of the substrate. The epitaxial pixel isolation feature is in direct contact with the doped region. The doped region extends continuously under the pixel region and the logic region. The epitaxial pixel isolation feature is in direct contact with the doped region, and the logic isolation feature is spaced apart from the doped region.

公开(公告)号：US09780137B2

公开(公告)日：2017-10-03

申请号：US14089263

申请日：2013-11-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Wen-I Hsu ,  Feng-Chi Hung ,  Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

Abstract: Embodiments of mechanisms for forming an image-sensor device are provided. The image-sensor device includes a substrate having a front surface and a back surface. The image-sensor device also includes a radiation-sensing region formed in the substrate. The radiation-sensing region is operable to detect incident radiation that enters the substrate through the back surface. The radiation-sensing region further includes an epitaxial isolation feature formed in the substrate and adjacent to the radiation-sensing region. The radiation-sensing region and the epitaxial isolation feature have different doping polarities.

公开(公告)号：US11596800B2

公开(公告)日：2023-03-07

申请号：US16901884

申请日：2020-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Ting Tsai ,  Jeng-Shyan Lin ,  Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung

IPC: H01L25/00 ,  H01L27/06 ,  H01L27/146 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532 ,  A61N1/39

Abstract: A semiconductor device comprises a first chip bonded on a second chip. The first chip comprises a first substrate and first interconnection components formed in first IMD layers. The second chip comprises a second substrate and second interconnection components formed in second IMD layers. The device further comprises a first conductive plug formed within the first substrate and the first IMD layers, wherein the first conductive plug is coupled to a first interconnection component and a second conductive plug formed through the first substrate and the first IMD layers and formed partially through the second IMD layers, wherein the second conductive plug is coupled to a second interconnection component.

公开(公告)号：US10515994B2

公开(公告)日：2019-12-24

申请号：US16148141

申请日：2018-10-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Tzu-Hsuan Hsu ,  Feng-Chi Hung ,  Min-Feng Kao

IPC: H01L27/146

Abstract: Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device comprises a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. The semiconductor device comprises a guard structure disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region.

公开(公告)号：US10290671B2

公开(公告)日：2019-05-14

申请号：US15714043

申请日：2017-09-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-De Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Jeng-Shyan Lin

IPC: H01L27/14 ,  H01L27/146 ,  H01L23/48

Abstract: An image sensor device includes a first substrate, an interconnect structure, a conductive layer, a conductive via and a second substrate. The first substrate includes a first region including a pixel array and a second region including a circuit. The interconnect structure is over the pixel array or the circuit. The interconnect structure electrically connecting the circuit to the pixel array. The conductive layer is on the interconnect structure. The conductive via passes through the second substrate and at least partially embedded in the conductive layer. The second substrate is over the conductive layer.

公开(公告)号：US10276622B2

公开(公告)日：2019-04-30

申请号：US15718061

申请日：2017-09-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-I Hsu ,  Feng-Chi Hung ,  Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC: H01L27/146

Abstract: An image-sensor device includes a substrate including a pixel region and a logic region. A logic transistor is disposed in the logic region and is surrounded by a logic isolation feature. A radiation-sensing region is disposed in the pixel region of the substrate. An epitaxial pixel isolation feature is disposed in the pixel region and surrounds the radiation-sensing region. A doped region with a same doping polarity as the radiation-sensing region is located between a bottom of the radiation-sensing region and the back surface of the substrate. The epitaxial pixel isolation feature is in direct contact with the doped region. The doped region extends continuously under the pixel region and the logic region. The epitaxial pixel isolation feature is in direct contact with the doped region, and the logic isolation feature is spaced apart from the doped region.

公开(公告)号：US20190043912A1

公开(公告)日：2019-02-07

申请号：US16148141

申请日：2018-10-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Tzu-Hsuan Hsu ,  Feng-Chi Hung ,  Min-Feng Kao

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/1469

Abstract: Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device comprises a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. The semiconductor device comprises a guard structure disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region.