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公开(公告)号：US10978341B2
公开(公告)日：2021-04-13
申请号：US16704536
申请日：2019-12-05
发明人： Chih-Hung Sun , Han-Ti Hsiaw , Yi-Wei Chiu , Kuan-Cheng Wang , Shin-Yeu Tsai , Jr-Yu Chen , Wen-Cheng Wu
IPC分类号： H01L21/768 , H01L21/311 , H01L21/8234 , H01L21/02 , H01L21/265 , H01L21/266 , H01L21/3205 , H01L21/3213 , H01L29/417 , H01L21/3215
摘要： A method includes performing an implantation on a portion of a first layer to form an implanted region, and removing un-implanted portions of the first layer. The implanted region remains after the un-implanted portions of the first layer are removed. An etching is then performed on a second layer underlying the first layer, wherein the implanted region is used as a portion of a first etching mask in the etching. The implanted region is removed. A metal mask is etched using the second layer to form a patterned mask. An inter-layer dielectric is then etched to form a contact opening, wherein the patterned mask is used as a second etching mask.
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公开(公告)号：US20180145131A1
公开(公告)日：2018-05-24
申请号：US15355783
申请日：2016-11-18
发明人： Kuan-Cheng Wang , Han-Ti Hsiaw
IPC分类号： H01L29/06 , H01L29/66 , H01L21/3115 , H01L21/311 , H01L21/02 , H01L21/8234 , H01L29/78 , H01L27/088
CPC分类号： H01L29/0649 , H01L21/0217 , H01L21/02321 , H01L21/31116 , H01L21/31155 , H01L21/823431 , H01L21/823481 , H01L21/823878 , H01L27/0886 , H01L29/66795 , H01L29/7851
摘要： FinFET structures and methods of forming the same are disclosed. In a method, a fin is formed on a substrate, an isolation region is formed on opposing sides of the fin. The isolation region is doped with carbon to form a doped region, and a portion of the isolation region is removed to expose a top portion of the fin, wherein the removed portion of the isolation region includes at least a portion of the doped region.
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公开(公告)号：US09728402B2
公开(公告)日：2017-08-08
申请号：US14832565
申请日：2015-08-21
发明人： Kuan-Cheng Wang , Chun-Hao Hsu , Han-Ti Hsiaw , Keng-Chu Lin
IPC分类号： H01L21/336 , H01L21/02 , H01L29/66 , H01L21/3105
CPC分类号： H01L21/02348 , H01L21/02164 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/02274 , H01L21/02326 , H01L21/02337 , H01L21/3105 , H01L21/76224 , H01L29/66795
摘要： An embodiment is a method including depositing a first flowable film over a substrate in a processing region, the first flowable film comprising silicon and nitrogen, curing the first flowable film in a first step at a first temperature with a first process gas and ultra-violet light, the first process gas including oxygen, curing the first flowable film in a second step at a second temperature with a second process gas and ultra-violet light, the second process gas being different than the first process gas, and annealing the cured first flowable film at a third temperature to convert the cured first flowable film into a silicon oxide film over the substrate.
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公开(公告)号：US12125876B2
公开(公告)日：2024-10-22
申请号：US15355783
申请日：2016-11-18
发明人： Kuan-Cheng Wang , Han-Ti Hsiaw
IPC分类号： H01L29/06 , H01L21/02 , H01L21/311 , H01L21/3115 , H01L21/8234 , H01L27/088 , H01L29/66 , H01L29/78 , H01L21/8238
CPC分类号： H01L29/0649 , H01L21/0217 , H01L21/02321 , H01L21/31116 , H01L21/31155 , H01L21/823431 , H01L21/823481 , H01L27/0886 , H01L29/66545 , H01L29/66795 , H01L29/7851 , H01L21/823878
摘要： FinFET structures and methods of forming the same are disclosed. In a method, a fin is formed on a substrate, an isolation region is formed on opposing sides of the fin. The isolation region is doped with carbon to form a doped region, and a portion of the isolation region is removed to expose a top portion of the fin, wherein the removed portion of the isolation region includes at least a portion of the doped region.
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公开(公告)号：US09647090B2
公开(公告)日：2017-05-09
申请号：US14586313
申请日：2014-12-30
发明人： Kuan-Cheng Wang , Chien-Feng Lin , Jeng-Yang Pan , Keng-Chu Lin
IPC分类号： H01L21/336 , H01L29/66 , H01L21/02 , H01L21/30 , H01L29/165
CPC分类号： H01L29/66795 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/3003 , H01L29/165
摘要： The present disclosure provides a method forming a semiconductor device in accordance with some embodiments. The method includes receiving a substrate having a fin protruding through the substrate, wherein the fin is formed of a first semiconductor material, exposing the substrate in an environment including hydrogen radicals, thereby passivating the protruded fin using the hydrogen radicals, and epitaxially growing a cap layer of a second semiconductor material to cover the protruded fin.
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公开(公告)号：US09960074B2
公开(公告)日：2018-05-01
申请号：US15257417
申请日：2016-09-06
发明人： Tsung Han Hsu , Kuan-Cheng Wang , Han-Ti Hsiaw , Shin-Yeu Tsai
IPC分类号： H01L21/762 , H01L21/306 , H01L21/324 , H01L21/02 , H01L29/66 , H01L29/06 , H01L29/78
CPC分类号： H01L21/76224 , H01L21/02271 , H01L21/30604 , H01L21/324 , H01L21/823431 , H01L21/823481 , H01L29/0649 , H01L29/66795 , H01L29/785
摘要： A method includes etching a semiconductor substrate to form trenches extending into the semiconductor substrate, and depositing a first dielectric layer into the trenches. The first dielectric layer fills lower portions of the trenches. A Ultra-Violet (UV) treatment is performed on the first dielectric layer in an oxygen-containing process gas. The method further includes depositing a second dielectric layer into the trenches. The second dielectric layer fills upper portions of the trenches. A thermal treatment is performed on the second dielectric layer in an additional oxygen-containing process gas. After the thermal treatment, an anneal is performed on the first dielectric layer and the second dielectric layer.
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公开(公告)号：US09837267B2
公开(公告)日：2017-12-05
申请号：US15143178
申请日：2016-04-29
发明人： Kuan-Cheng Wang , Han-Ti Hsiaw
IPC分类号： H01L21/31 , H01L21/469 , H01L21/02 , C23C16/56
CPC分类号： H01L21/02348 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02203 , H01L21/02214 , H01L21/02216 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/02274 , H01L21/3105 , H01L21/67115
摘要： A method of forming a semiconductor device includes forming a dielectric layer over a substrate, and curing the dielectric layer with a first curing process. The first curing process includes providing a first UV light source, filtering the first UV light source with a first filter, the first filter permitting a first electromagnetic radiation within a first pre-determined spectrum to pass through and blocking electromagnetic radiation outside the first pre-determined spectrum, and curing the dielectric layer with the first electromagnetic radiation of the first UV light source.
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公开(公告)号：US20180226291A1
公开(公告)日：2018-08-09
申请号：US15945091
申请日：2018-04-04
发明人： Tsung Han Hsu , Kuan-Cheng Wang , Han-Ti Hsiaw , Shin-Yeu Tsai
IPC分类号： H01L21/762 , H01L29/78 , H01L29/66 , H01L29/06 , H01L21/324 , H01L21/306 , H01L21/02
CPC分类号： H01L21/76224 , H01L21/02271 , H01L21/30604 , H01L21/324 , H01L21/823431 , H01L21/823481 , H01L29/0649 , H01L29/66795 , H01L29/785
摘要： A method includes etching a semiconductor substrate to form trenches extending into the semiconductor substrate, and depositing a first dielectric layer into the trenches. The first dielectric layer fills lower portions of the trenches. A Ultra-Violet (UV) treatment is performed on the first dielectric layer in an oxygen-containing process gas. The method further includes depositing a second dielectric layer into the trenches. The second dielectric layer fills upper portions of the trenches. A thermal treatment is performed on the second dielectric layer in an additional oxygen-containing process gas. After the thermal treatment, an anneal is performed on the first dielectric layer and the second dielectric layer.
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公开(公告)号：US20180151425A1
公开(公告)日：2018-05-31
申请号：US15870058
申请日：2018-01-12
发明人： Chih-Hung Sun , Han-Ti Hsiaw , Yi-Wei Chiu , Kuan-Cheng Wang , Shin-Yeu Tsai , Jr-Yu Chen , Wen-Cheng Wu
IPC分类号： H01L21/768 , H01L21/8234 , H01L21/02 , H01L21/266 , H01L21/3205 , H01L21/265 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/76877 , H01L21/02532 , H01L21/02592 , H01L21/26533 , H01L21/266 , H01L21/31144 , H01L21/32053 , H01L21/32133 , H01L21/32134 , H01L21/32155 , H01L21/76816 , H01L21/76829 , H01L21/76897 , H01L21/823475 , H01L29/41791
摘要： A method includes performing an implantation on a portion of a first layer to form an implanted region, and removing un-implanted portions of the first layer. The implanted region remains after the un-implanted portions of the first layer are removed. An etching is then performed on a second layer underlying the first layer, wherein the implanted region is used as a portion of a first etching mask in the etching. The implanted region is removed. A metal mask is etched using the second layer to form a patterned mask. An inter-layer dielectric is then etched to form a contact opening, wherein the patterned mask is used as a second etching mask.
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公开(公告)号：US09881834B1
公开(公告)日：2018-01-30
申请号：US15462001
申请日：2017-03-17
发明人： Chih-Hung Sun , Han-Ti Hsiaw , Yi-Wei Chiu , Kuan-Cheng Wang , Shin-Yeu Tsai , Jr-Yu Chen , Wen-Cheng Wu
IPC分类号： H01L21/768 , H01L21/311 , H01L21/266 , H01L21/3213 , H01L21/265 , H01L21/3205 , H01L21/02 , H01L21/8234
CPC分类号： H01L21/76877 , H01L21/02532 , H01L21/02592 , H01L21/26533 , H01L21/266 , H01L21/31144 , H01L21/32053 , H01L21/32133 , H01L21/32134 , H01L21/32155 , H01L21/76829 , H01L21/823475 , H01L29/41791
摘要： A method includes performing an implantation on a portion of a first layer to form an implanted region, and removing un-implanted portions of the first layer. The implanted region remains after the un-implanted portions of the first layer are removed. An etching is then performed on a second layer underlying the first layer, wherein the implanted region is used as a portion of a first etching mask in the etching. The implanted region is removed. A metal mask is etched using the second layer to form a patterned mask. An inter-layer dielectric is then etched to form a contact opening, wherein the patterned mask is used as a second etching mask.
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