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公开(公告)号：US12051666B2
公开(公告)日：2024-07-30
申请号：US17739200
申请日：2022-05-09
Inventor： Po-Yuan Teng , Hao-Yi Tsai , Kuo-Lung Pan , Sen-Kuei Hsu , Tin-Hao Kuo , Yi-Yang Lei , Ying-Cheng Tseng , Chi-Hui Lai
IPC: H01L23/00 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/31 , H01L23/538
CPC classification number: H01L24/24 , H01L21/4857 , H01L21/561 , H01L21/565 , H01L21/6835 , H01L23/3128 , H01L23/5383 , H01L23/5386 , H01L24/19 , H01L2221/68345 , H01L2221/68359 , H01L2224/24137
Abstract: A package structure including at least one semiconductor die and a redistribution structure is provided. The semiconductor die is laterally encapsulated by an encapsulant, and the redistribution structure is disposed on the semiconductor die and the encapsulant and electrically connected with the semiconductor die. The redistribution structure includes signal lines and a pair of repair lines. The signal lines include a pair of first signal lines located at a first level, and each first signal line of the pair of first signal lines has a break that split each first signal line into separate first and second fragments. The pair of repair lines is located above the pair of first signal lines and located right above the break. Opposite ending portions of each repair line are respectively connected with the first and second fragments with each repair line covering the break in each first signal line.
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公开(公告)号：US11848233B2
公开(公告)日：2023-12-19
申请号：US17705378
申请日：2022-03-27
Inventor： Po-Yuan Teng , Bor-Rung Su , De-Yuan Lu , Hao-Yi Tsai , Tin-Hao Kuo , Tzung-Hui Lee , Tai-Min Chang
IPC: H01L21/768 , H01L23/48 , H01L23/31 , H01L23/00 , H01L21/027 , H01L21/56
CPC classification number: H01L21/76871 , H01L21/0274 , H01L21/565 , H01L21/76816 , H01L21/76877 , H01L23/3107 , H01L23/481 , H01L24/08 , H01L24/49 , H01L2224/02331 , H01L2224/02372
Abstract: A method includes the following steps. A seed layer is formed over a structure having at least one semiconductor die. A first patterned photoresist layer is formed over the seed layer, wherein the first patterned photoresist layer includes a first opening exposing a portion of the seed layer. A metallic wiring is formed in the first opening and on the exposed portion of the seed layer. A second patterned photoresist layer is formed on the first patterned photoresist layer and covers the metallic wiring, wherein the second patterned photoresist layer includes a second opening exposing a portion of the metallic wiring. A conductive via is formed in the second opening and on the exposed portion of the metallic wiring. The first patterned photoresist layer and the second patterned photoresist layer are removed. The metallic wiring and the conductive via are laterally wrapped around with an encapsulant.
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公开(公告)号：US20230120191A1
公开(公告)日：2023-04-20
申请号：US18086545
申请日：2022-12-21
Inventor： Tin-Hao Kuo , Chen-Hua Yu , Chung-Shi Liu , Hao-Yi Tsai , Yu-Chia Lai , Po-Yuan Teng
IPC: H01L25/065 , H01L23/522 , H01L23/528 , H01L23/532 , H01L23/538 , H01L23/00 , H01L23/31 , H05K1/02 , H01L25/00
Abstract: A semiconductor device, a circuit board structure and a manufacturing forming thereof are provided. A circuit board structure includes a core layer, a first build-up layer and a second build-up layer. The first build-up layer and the second build-up layer are disposed on opposite sides of the core layer. The circuit board structure has a plurality of stress releasing trenches extending into the first build-up layer and the second build-up layer.
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公开(公告)号：US11502013B2
公开(公告)日：2022-11-15
申请号：US17315735
申请日：2021-05-10
Inventor： Shu-Rong Chun , Kuo Lung Pan , Tin-Hao Kuo , Hao-Yi Tsai , Pei-Hsuan Lee , Chien Ling Hwang , Yu-Chia Lai , Po-Yuan Teng , Chen-Hua Yu
IPC: H01L23/32 , H01L23/538 , H01L23/31 , H01L23/00 , H01L25/065 , H01L21/56
Abstract: In an embodiment, a device includes: a package component including: integrated circuit dies; an encapsulant around the integrated circuit dies; a redistribution structure over the encapsulant and the integrated circuit dies, the redistribution structure being electrically coupled to the integrated circuit dies; sockets over the redistribution structure, the sockets being electrically coupled to the redistribution structure; and a support ring over the redistribution structure and surrounding the sockets, the support ring being disposed along outermost edges of the redistribution structure, the support ring at least partially laterally overlapping the redistribution structure.
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公开(公告)号：US20220216103A1
公开(公告)日：2022-07-07
申请号：US17705378
申请日：2022-03-27
Inventor： Po-Yuan Teng , Bor-Rung Su , De-Yuan Lu , Hao-Yi Tsai , Tin-Hao Kuo , Tzung-Hui Lee , Tai-Min Chang
IPC: H01L21/768 , H01L23/48 , H01L23/31 , H01L23/00 , H01L21/027 , H01L21/56
Abstract: A method includes the following steps. A seed layer is formed over a structure having at least one semiconductor die. A first patterned photoresist layer is formed over the seed layer, wherein the first patterned photoresist layer includes a first opening exposing a portion of the seed layer. A metallic wiring is formed in the first opening and on the exposed portion of the seed layer. A second patterned photoresist layer is formed on the first patterned photoresist layer and covers the metallic wiring, wherein the second patterned photoresist layer includes a second opening exposing a portion of the metallic wiring. A conductive via is formed in the second opening and on the exposed portion of the metallic wiring. The first patterned photoresist layer and the second patterned photoresist layer are removed. The metallic wiring and the conductive via are laterally wrapped around with an encapsulant.
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公开(公告)号：US20240304531A1
公开(公告)日：2024-09-12
申请号：US18180852
申请日：2023-03-09
Inventor： RUI-WEN SONG , Po-Yuan Teng , Hao-Yi Tsai , Chia-Hung Liu , Shih-Wei Chen
IPC: H01L23/498 , H01L21/48 , H01L21/56 , H01L23/29 , H01L23/544
CPC classification number: H01L23/49811 , H01L21/4853 , H01L21/56 , H01L23/293 , H01L23/544 , H01L2223/54426
Abstract: A semiconductor device includes a die, a redistribution layer (RDL) structure including a first polymer layer, a second polymer layer and a UBM layer. The die is encapsulated by an encapsulant. The RDL structure is disposed over the encapsulant. The second polymer layer is disposed on the first polymer layer, wherein a transmittance of the second polymer layer is smaller than a transmittance of the first polymer layer. The UBM layer is disposed over and electrically connected to the RDL structure, wherein the UBM layer is disposed in the first polymer layer and the second polymer layer.
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公开(公告)号：US20220262758A1
公开(公告)日：2022-08-18
申请号：US17739200
申请日：2022-05-09
Inventor： Po-Yuan Teng , Hao-Yi Tsai , Kuo-Lung Pan , Sen-Kuei Hsu , Tin-Hao Kuo , Yi-Yang Lei , Ying-Cheng Tseng , Chi-Hui Lai
IPC: H01L23/00 , H01L23/31 , H01L21/56 , H01L23/538 , H01L21/48 , H01L21/683
Abstract: A package structure including at least one semiconductor die and a redistribution structure is provided. The semiconductor die is laterally encapsulated by an encapsulant, and the redistribution structure is disposed on the semiconductor die and the encapsulant and electrically connected with the semiconductor die. The redistribution structure includes signal lines and a pair of repair lines. The signal lines include a pair of first signal lines located at a first level, and each first signal line of the pair of first signal lines has a break that split each first signal line into separate first and second fragments. The pair of repair lines is located above the pair of first signal lines and located right above the break. Opposite ending portions of each repair line are respectively connected with the first and second fragments with each repair line covering the break in each first signal line.
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公开(公告)号：US20210305212A1
公开(公告)日：2021-09-30
申请号：US17315381
申请日：2021-05-10
Inventor： Wei-Kang Hsieh , Hung-Yi Kuo , Hao-Yi Tsai , Kuo-Lung Pan , Ting Hao Kuo , Yu-Chia Lai , Mao-Yen Chang , Po-Yuan Teng , Shu-Rong Chun
IPC: H01L25/065 , H01L23/00 , H01L25/00
Abstract: A manufacturing method of a semiconductor package includes the following steps. At least one lower semiconductor device is provided. A plurality of conductive pillars are formed on the at least one lower semiconductor device. A dummy die is disposed on a side of the at least one lower semiconductor device. An upper semiconductor device is disposed on the at least one lower semiconductor device and the dummy die, wherein the upper semiconductor device reveals a portion of the at least one lower semiconductor device where the plurality of conductive pillars are disposed. The at least one lower semiconductor device, the dummy die, the upper semiconductor device, and the plurality of conductive pillars are encapsulated in an encapsulating material. A redistribution structure is formed over the upper semiconductor device and the plurality of conductive pillars.
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公开(公告)号：US20240339427A1
公开(公告)日：2024-10-10
申请号：US18743013
申请日：2024-06-13
Inventor： Po-Yuan Teng , Hao-Yi Tsai , Kuo-Lung Pan , Sen-Kuei Hsu , Tin-Hao Kuo , Yi-Yang Lei , Ying-Cheng Tseng , Chi-Hui Lai
IPC: H01L23/00 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/31 , H01L23/538
CPC classification number: H01L24/24 , H01L21/4857 , H01L21/561 , H01L21/565 , H01L21/6835 , H01L23/3128 , H01L23/5383 , H01L23/5386 , H01L24/19 , H01L2221/68345 , H01L2221/68359 , H01L2224/24137
Abstract: A package structure including at least one semiconductor die and a redistribution structure is provided. The semiconductor die is laterally encapsulated by an encapsulant, and the redistribution structure is disposed on the semiconductor die and the encapsulant and electrically connected with the semiconductor die. The redistribution structure includes signal lines and a pair of repair lines. The signal lines include a pair of first signal lines located at a first level, and each first signal line of the pair of first signal lines has a break that split each first signal line into separate first and second fragments. The pair of repair lines is located above the pair of first signal lines and located right above the break. Opposite ending portions of each repair line are respectively connected with the first and second fragments with each repair line covering the break in each first signal line.
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公开(公告)号：US12009281B2
公开(公告)日：2024-06-11
申请号：US17586805
申请日：2022-01-28
Inventor： Shih-Wei Chen , Hao-Yi Tsai , Kuo-Lung Pan , Tin-Hao Kuo , Po-Yuan Teng , Chi-Hui Lai
IPC: H01L23/367 , H01L21/3205 , H01L21/48 , H01L23/373 , H01L23/552 , H01L25/065 , H01L21/56 , H01L23/00 , H01L23/498 , H01L23/538 , H01L25/18
CPC classification number: H01L23/3677 , H01L21/32051 , H01L21/4882 , H01L23/3736 , H01L23/552 , H01L25/0655 , H01L21/561 , H01L23/49827 , H01L23/49833 , H01L23/5389 , H01L24/24 , H01L25/18 , H01L2224/24137
Abstract: A package structure includes a semiconductor die, a redistribution circuit structure, and a metallization element. The semiconductor die has an active side and an opposite side opposite to the active side. The redistribution circuit structure is disposed on the active side and is electrically coupled to the semiconductor die. The metallization element has a plate portion and a branch portion connecting to the plate portion, wherein the metallization element is electrically isolated to the semiconductor die, and the plate portion of the metallization element is in contact with the opposite side.
