公开(公告)号：US08868228B2

公开(公告)日：2014-10-21

申请号：US13286443

申请日：2011-11-01

申请人： Toshiaki Otsuki ,  Takafumi Sasaki

发明人： Toshiaki Otsuki ,  Takafumi Sasaki

IPC分类号： G06F19/00 ,  G05B19/416 ,  G05B19/41

CPC分类号： G05B19/41 ,  G05B19/416

摘要： When a numerical controller executes a tool-center-point control in which a path of a tool center point with respect to a workpiece is instructed, and the workpiece is machined along the instructed path based on a speed instruction, the numerical controller sets the speed instruction so that the speed instruction is a synthesis speed with respect to a synthesis distance of a relative moving distance between the workpiece and a tool center point and a tool-direction changing distance due to a relative change in a tool direction with respect to the workpiece by a rotary axis. The numerical controller interpolates a position of a linear axis and a position of a rotary axis by the tool-center-point control according to the synthesis speed and drives the linear axis and the rotary axis to the position of the linear axis and the position of the rotary axis created by the interpolation.

摘要翻译： 当数字控制器执行其中指示了工具中心点的路径相对于工件的工具中心点控制，并且基于速度指令沿着指示路径加工工件时，数字控制器设定速度 指令，使得速度指令是相对于工件与刀具中心点之间的相对移动距离的合成距离和由于刀具方向相对于工件的相对变化而产生的刀具方向变化距离的合成速度 通过旋转轴。 数值控制器根据合成速度通过刀具中心点控制来插入线性轴的位置和旋转轴的位置，并将线性轴和旋转轴驱动到直线轴的位置和位置 由内插产生的旋转轴。

公开(公告)号：US08450220B2

公开(公告)日：2013-05-28

申请号：US12825005

申请日：2010-06-28

申请人： Takafumi Sasaki ,  Sadao Nakashima ,  Yoshinori Imai ,  Koei Kuribayashi

发明人： Takafumi Sasaki ,  Sadao Nakashima ,  Yoshinori Imai ,  Koei Kuribayashi

IPC分类号： H01L21/469

CPC分类号： H01L21/0262 ,  C23C16/325 ,  C23C16/4412 ,  C23C16/45514 ,  C23C16/45578 ,  C23C16/54 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02529

摘要： There are provided a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing a substrate, for growing a SiC epitaxial film at a high-temperature condition. The substrate processing apparatus comprises: a reaction chamber; a first gas supply system configured to supply at least a gas containing silicon atoms and a gas containing chlorine atoms, or a gas containing silicon and chlorine atoms; a second gas supply system configured to supply at least a reducing gas; a third gas supply system configured to supply at least a gas containing carbon atoms; a first gas supply nozzle connected to the first gas supply system or the first and third gas supply systems; a second gas supply nozzle connected to the second gas supply system or the second and third gas supply systems; and a controller configured to control the first to third gas supply systems.

摘要翻译： 提供了一种用于在高温条件下生长SiC外延膜的衬底处理装置，半导体器件的制造方法和制造衬底的方法。 基板处理装置包括：反应室; 第一气体供给系统，其配置为至少供给含有硅原子的气体和含有氯原子的气体，或者含有硅和氯原子的气体; 构造成供给至少一种还原气体的第二气体供给系统; 第三气体供给系统，被配置为至少提供含有碳原子的气体; 连接到第一气体供应系统或第一和第三气体供应系统的第一气体供应喷嘴; 连接到第二气体供应系统或第二和第三气体供应系统的第二气体供应喷嘴; 以及控制器，被配置为控制第一至第三气体供应系统。

公开(公告)号：US08409352B2

公开(公告)日：2013-04-02

申请号：US13036330

申请日：2011-02-28

申请人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

发明人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

IPC分类号： C23C16/00 ,  C23C16/455

CPC分类号： H01L21/0262 ,  C23C16/325 ,  C23C16/45578 ,  H01L21/02529 ,  H01L21/67109

摘要： An apparatus including a reaction chamber in which substrates are stacked; a first gas supply nozzle installed in a region in which the substrates are stacked; a second gas supply nozzle installed in a different position; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the substrates, a line of which is branched in a direction of the second gas supply nozzle, and including a first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the substrates, a line of which is branched in a direction of the first gas supply nozzle, and including a second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the substrates are stacked.

摘要翻译： 一种装置，包括堆叠基板的反应室; 安装在基板堆叠的区域中的第一气体供给喷嘴; 安装在不同位置的第二气体供给喷嘴; 第一分支喷嘴，其在与所述基板的主表面平行的方向上安装在所述第一气体供给喷嘴处，所述第一分支喷嘴的管线沿所述第二气体供给喷嘴的方向分支，并且包括第一气体供给口; 以及第二分支喷嘴，其沿着与所述基板的主表面平行的方向安装在所述第二气体供给喷嘴上，所述第二分支喷嘴的管线沿所述第一气体供给喷嘴的方向分支，并且包括第二气体供给口; 其中所述第一气体供给口和所述第二气体供给口沿着所述基板堆叠的方向彼此相邻地安装。

公开(公告)号：US20120220108A1

公开(公告)日：2012-08-30

申请号：US13406056

申请日：2012-02-27

申请人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

发明人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

IPC分类号： H01L21/20 ,  H01L21/306 ,  C23C16/455

CPC分类号： H01L21/67109 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/4587 ,  C23C16/4588 ,  C23C16/46 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/67757

摘要： When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.

摘要翻译： 当在1500℃至1700℃的超高温下进行诸如SiC外延生长的处理时，可以将成膜气体降低至歧管的耐热温度，并且可以提高膜质量均匀性。 基板处理装置包括用于处理多个基板的反应室，用于保持多个基板的船，用于向多个基板供给成膜气体的气体供给喷嘴，用于排出成膜的排气口 供应到反应室的气体，限定比由反应室和船的内壁限定的第一流动路径窄的第二流动路径的热交换部分，以及安装在多个 底物。

公开(公告)号：US20120220107A1

公开(公告)日：2012-08-30

申请号：US13405638

申请日：2012-02-27

申请人： Masanao Fukuda ,  Takafumi Sasaki ,  Takatomo Yamaguchi ,  Daisuke Hara

发明人： Masanao Fukuda ,  Takafumi Sasaki ,  Takatomo Yamaguchi ,  Daisuke Hara

IPC分类号： H01L21/20 ,  B65D85/00 ,  C30B25/12

CPC分类号： H01L21/67757 ,  H01L21/67309

摘要： Provided is a substrate processing apparatus having a stack structure of wafers that can endure a high temperature without bad influence on film-forming precision. The stack structure includes a holder base (110) configured to hold a wafer (14) at an inner circumference side thereof, and boat columns (31a to 31c) each including a holder retainer (HS) configured to hold an outer circumference side of the holder base (110), wherein an outer diameter of the holder base (110) is larger than that of the wafer (14), and the holder base (110) is detachable from the holder retainers (HS).

摘要翻译： 提供一种具有可承受高温而不影响成膜精度的晶片的堆叠结构的基板处理装置。 所述堆叠结构包括构造成在其内周侧保持晶片（14）的保持器基座（110）和每个包括保持器保持器（HS）的船柱（31a至31c），所述保持器保持器（HS）构造成保持所述 保持器基座（110），其中保持器基座（110）的外径大于晶片（14）的外径，并且保持器基座（110）可从保持器保持器（HS）拆卸。

公开(公告)号：US08041447B2

公开(公告)日：2011-10-18

申请号：US12192590

申请日：2008-08-15

申请人： Toshiaki Otsuki ,  Soichiro Ide ,  Takafumi Sasaki

发明人： Toshiaki Otsuki ,  Soichiro Ide ,  Takafumi Sasaki

IPC分类号： G05B13/02 ,  G05B19/25 ,  G05B19/41 ,  G06F19/00

CPC分类号： G05B19/4086 ,  G05B2219/35557 ,  G05B2219/50049

摘要： A numerical controller controlling a 5-axis machine tool compensates setting error that arises when a workpiece is set on the table. Error in the three linear axes and the two rotation axes are compensated using preset error amounts to keep the calculated tool position and tool direction in a command coordinate system. If a trigonometric function used for error compensation has a plurality of solution sets, the solution set closest to the tool direction in the command coordinate system is selected from the plurality of solution sets and used as the positions of the two rotation axes compensated in the above error compensation.

摘要翻译： 控制5轴机床的数字控制器可以补偿工件设置在工作台上时产生的设定误差。 三个直线轴的误差和两个旋转轴的补偿使用预设的误差量，以将计算出的刀具位置和刀具方向保持在命令坐标系中。 如果用于误差补偿的三角函数具有多个解集，则从多个解集合中选择最靠近命令坐标系中的刀具方向的解，并将其用作在上述中补偿的两个旋转轴的位置 误差补偿。

公开(公告)号：US20090093905A1

公开(公告)日：2009-04-09

申请号：US12192590

申请日：2008-08-15

申请人： Toshiaki Otsuki ,  Soichiro Ide ,  Takafumi Sasaki

发明人： Toshiaki Otsuki ,  Soichiro Ide ,  Takafumi Sasaki

IPC分类号： G05B19/404

CPC分类号： G05B19/4086 ,  G05B2219/35557 ,  G05B2219/50049

摘要： A numerical controller controlling a 5-axis machine tool compensates setting error that arises when a workpiece is set on the table. Error in the three linear axes and the two rotation axes are compensated using preset error amounts to keep the calculated tool position and tool direction in a command coordinate system. If a trigonometric function used for error compensation has a plurality of solution sets, the solution set closest to the tool direction in the command coordinate system is selected from the plurality of solution sets and used as the positions of the two rotation axes compensated in the above error compensation.

摘要翻译： 控制5轴机床的数字控制器可以补偿工件设置在工作台上时产生的设定误差。 三个直线轴的误差和两个旋转轴的补偿使用预设的误差量，以将计算出的刀具位置和刀具方向保持在命令坐标系中。 如果用于误差补偿的三角函数具有多个解集，则从多个解集合中选择最靠近命令坐标系中的刀具方向的解，并将其用作在上述中补偿的两个旋转轴的位置 误差补偿。

公开(公告)号：US20090029561A1

公开(公告)日：2009-01-29

申请号：US12219131

申请日：2008-07-16

申请人： Masanao Fukuda ,  Kazuhiro Morimitsu ,  Takafumi Sasaki

发明人： Masanao Fukuda ,  Kazuhiro Morimitsu ,  Takafumi Sasaki

IPC分类号： H01L21/283 ,  C23C16/00

CPC分类号： C23C16/45591 ,  C23C16/45578 ,  C30B25/14 ,  C30B25/165

摘要： There is provided a semiconductor processing apparatus comprising a processing tube for housing a substrate support member that supports a plurality of substrates stacked at a prescribed pitch in a vertical direction; a gas supply part that extends in a direction in which the substrates are stacked in the processing tube and that has a plurality of gas supply openings; an exhaust part that opens onto the processing tube; a gas rectifying plate that is disposed in a space between a penumbra of the substrates supported on the substrate support member and an inner wall of the processing tube, and that extends from the gas supply part in a circumferential direction of the processing tube and in the direction in which the substrates are stacked; and a gas flow regulating part disposed in a space in the processing tube that is above a top-most gas supply opening and a top-most substrate and in a space in the processing tube that is below a bottom-most substrate and a bottom-most gas supply opening. A thin film formed on the substrate can be made more uniform.

摘要翻译： 提供了一种半导体处理装置，其包括：处理管，用于容纳基板支撑构件，所述基板支撑构件支撑以垂直方向以规定间距堆叠的多个基板; 气体供给部，其沿着所述基板堆叠在所述处理管中并具有多个气体供给开口的方向延伸; 通向处理管上的排气部分; 气体整流板，其设置在支撑在基板支撑部件上的基板的半暗区与处理管的内壁之间的空间中，并且从处理管的圆周方向从气体供给部延伸， 堆叠基板的方向; 以及气体流量调节部，其设置在所述处理管的空间中，所述空间位于最上面的气体供给开口和最上面的基板之上，并且处于所述处理管的位于最下面的基板之下的空间中， 大部分供气口。 可以使形成在基板上的薄膜更均匀。

公开(公告)号：US20070008388A1

公开(公告)日：2007-01-11

申请号：US10555041

申请日：2005-02-23

申请人： Kiyoshi Yamaguchi ,  Takafumi Sasaki

发明人： Kiyoshi Yamaguchi ,  Takafumi Sasaki

IPC分类号： B41J2/045

CPC分类号： B41J2/14201 ,  B41J2/14274 ,  B41J2202/03

摘要： A liquid drop discharge head includes a nozzle configured to discharge a liquid drop by using a piezoelectric element. Lead ingredients are not included in the piezoelectric element.

摘要翻译： 液滴排出头包括通过使用压电元件来排出液滴的喷嘴。 铅成分不包括在压电元件中。

公开(公告)号：US20060247817A1

公开(公告)日：2006-11-02

申请号：US11397692

申请日：2006-04-05

申请人： Toshiaki Otsuki ,  Soichiro Ide ,  Takafumi Sasaki

发明人： Toshiaki Otsuki ,  Soichiro Ide ,  Takafumi Sasaki

IPC分类号： G06F19/00

CPC分类号： G01B21/042

摘要： A work is installed on a table of a machine tool, and the coordinate system on the work is (X′, Y′, Z′). Each three points on respective three faces of the work, which are orthogonal to one another, A, B, C, D, E, F, G, H and I, are detected with a touch probe. From three points on the same plane, each of three formulas of planes which lies on the three points, respectively, are obtained. A position O′ (XO, YO, ZO) of a point where the three plane intersect with one another is obtained. This position is a parallel translation error. From these three plane formulas, points on the X′, Y′ and Z′ axes each being distant from the position O′ by the length L are obtained. Rotation matrices are obtained from the respective points, position O′ (XO, YO, ZO), and L. Rotary direction errors are obtained using the rotation matrices. In this manner, a work location error which is composed of the three-dimensional parallel translation error and three-dimensional rotary direction errors is obtained.

摘要翻译： 工件安装在机床的工作台上，工件上的坐标系为（X'，Y'，Z'）。 A，B，C，D，E，F，G，H和I彼此正交的工件的相应三个面上的每个三个点都用探针检测。 从同一平面上的三个点，分别得到位于三个点上的三个平面的三个公式。 获得三个平面彼此相交的点的位置O'（X O，O，Y O，Z O O）。 这个位置是平行翻译错误。 通过这三个平面公式，可以得到X'，Y'，Z'各自远离位置O'长度L的点。 旋转矩阵从相应的位置获得，位置O'（X O，O，O，Z O O）和L.旋转方向误差 使用旋转矩阵获得。 以这种方式，获得由三维平行平移平移误差和三维旋转方向误差构成的作业位置误差。