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    Method of fabricating bipolar transistors and insulated gate field effect transistors having doped polycrystalline silicon conductors
    3.
    发明授权
    Method of fabricating bipolar transistors and insulated gate field effect transistors having doped polycrystalline silicon conductors 失效
    制造具有掺杂多晶硅导体的双极晶体管和绝缘栅场效应晶体管的方法

    公开(公告)号：US4735916A

    公开(公告)日：1988-04-05

    申请号：US13252

    申请日：1987-02-10

    申请人： Hideo Homma ,  Yutaka Misawa ,  Naohiro Momma

    发明人： Hideo Homma ,  Yutaka Misawa ,  Naohiro Momma

    IPC分类号： H01L27/06 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/331 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8249 ,  H01L29/73 ,  H01L29/732 ,  H01L29/78 ,  H01L21/385

    CPC分类号： H01L29/66272 ,  H01L21/0337 ,  H01L21/32137 ,  H01L21/8249 ,  H01L29/41783 ,  H01L29/6659 ,  H01L29/78 ,  H01L29/66545

    摘要： A method of fabricating a semiconductor device includes the steps of: forming at least one first semiconductor region of a first conductivity type and at least one second semiconductor region of a second conductivity type in a main surface of a semiconductor layer of the first conductivity type; forming a three-layer film having a desired shape on each of the first and second semiconductor regions, the three-layer film being made up of a bottom layer which is a conductive film, an intermediate layer which is a silicon nitride film, and a top layer which is a polycrystalline silicon film doped with one of arsenic and phosphorus; forming a first insulating layer on the side wall of the three-layer film; forming a second polycrystalline silicon film on the whole surface, and diffusing one of arsenic and phosphorus from the first polycrystalline silicon film into the second polycrystalline silicon film; selectively etching off the first polycrystalline silicon film and that portion of the second polycrystalline silicon film, in which one of arsenic and phosphorus has been diffused; forming a second insulating layer at least on the surface of the portion of the second polycrystalline silicon film which exists on the second semiconductor region; removing the silicon nitride film and the conductive film which exist on the second semiconductor region, while using the second insulating layer as a mask, to form an aperture; and forming a third polycrystalline silicone film so that the aperture is covered by the third polycrystalline silicon film.

    摘要翻译： 一种制造半导体器件的方法包括以下步骤：在第一导电类型的半导体层的主表面中形成第一导电类型的至少一个第一半导体区域和第二导电类型的至少一个第二半导体区域; 在第一和第二半导体区域中的每一个上形成具有期望形状的三层膜，该三层膜由作为导电膜的底层，作为氮化硅膜的中间层和 顶层，其是掺杂有砷和磷之一的多晶硅膜; 在三层膜的侧壁上形成第一绝缘层; 在整个表面上形成第二多晶硅膜，并将砷和磷中的一种从第一多晶硅膜扩散到第二多晶硅膜中; 选择性地蚀刻出第一多晶硅膜和其中砷和磷之一已经扩散的第二多晶硅膜的那部分; 至少在所述第二半导体区域上存在的所述第二多晶硅膜的所述部分的表面上形成第二绝缘层; 在使用第二绝缘层作为掩模的同时，除去存在于第二半导体区域上的氮化硅膜和导电膜，以形成孔径; 以及形成第三多晶硅膜，使得所述孔被所述第三多晶硅膜覆盖。

    Method for forming an anti-reflection film of a cathode-ray tube, an apparatus used for carrying out the method and a cathode-ray tube having the anti-reflection film
    4.
    发明授权
    Method for forming an anti-reflection film of a cathode-ray tube, an apparatus used for carrying out the method and a cathode-ray tube having the anti-reflection film 失效
    用于形成阴极射线管的防反射膜的方法，用于实施该方法的装置和具有防反射膜的阴极射线管

    公开(公告)号：US5449534A

    公开(公告)日：1995-09-12

    申请号：US942397

    申请日：1992-09-09

    申请人： Tomoji Oishi ,  Sachiko Maekawa ,  Akira Kato ,  Masahiro Nishizawa ,  Yoshifumi Tomita ,  Kojiro Okude ,  Kenji Tochigi ,  Yutaka Misawa

    发明人： Tomoji Oishi ,  Sachiko Maekawa ,  Akira Kato ,  Masahiro Nishizawa ,  Yoshifumi Tomita ,  Kojiro Okude ,  Kenji Tochigi ,  Yutaka Misawa

    IPC分类号： G02B1/11 ,  H01J29/89 ,  B05D3/06 ,  B05D5/06 ,  B05D5/12

    CPC分类号： G02B1/11 ,  H01J29/896 ,  H01J2209/012

    摘要： An anti-reflection film is produced on the panel surface of a cathode-ray tube by:(A) preparing a solution for forming an anti-reflection film, which contains water and a metal alkoxide having the formula,M(OR).sub.nwherein M is a metal selected from the group consisting of Si, Ti, Al, Zr, Sn, In, Sb and Zn; R is an alkyl group having 1-10 carbon atoms; n is an integer of from 1 to 8; and when n is not 1, the alkyl groups represented by R may be the same or different,(B) coating the solution for forming an anti-reflection film on the outermost surface of the panel of a cathode-ray tube, and(C) applying an ultraviolet light to the solution for forming an anti-reflection film coated on said surface to cure the solution to form a transparent film with fine roughness.This production method is carried out using an apparatus having:(a) a coating means for coating the above solution for forming an anti-reflection film on the outermost surface of the panel of a cathode-ray tube,(b) a transferring means for transferring the solution-coated cathode-ray tube, and(c) an ultraviolet light-applying means for photocuring the solution coated on the cathode-ray tube during the transfer of the solution-coated cathode-ray tube.In the above method, when a silicon alkoxide is used as the metal alkoxide, there can be obtained a cathode-ray tube having an anti-reflection film made of alkali-free silica on the outermost surface of the panel, said anti-reflection film giving a ratio of Si-O-Si peak intensity to Si-OH peak intensity of 4 or more when measured for infrared spectrum.

    摘要翻译： 在阴极射线管的面板表面上制造防反射膜：（A）制备含有水和金属醇盐的抗反射膜的溶液，所述金属醇盐具有式M（OR）n，其中 M是选自Si，Ti，Al，Zr，Sn，In，Sb和Zn的金属; R是具有1-10个碳原子的烷基; n为1〜8的整数， 当n不为1时，由R表示的烷基可以相同或不同，（B）在阴极射线管的面板的最外表面上涂布形成抗反射膜的溶液，（C ）向所述溶液施加紫外光以形成涂覆在所述表面上的抗反射膜，以使溶液固化以形成具有精细粗糙度的透明膜。 该制造方法使用以下装置进行：（a）在阴极射线管的面板的最表面上涂布上述用于形成防反射膜的溶液的涂布装置，（b）转印装置， 转移溶液涂覆的阴极射线管，以及（c）紫外线照射装置，用于在涂覆阴极射线管的转印期间光固化涂覆在阴极射线管上的溶液。 在上述方法中，当使用硅醇盐作为金属醇盐时，可以获得在面板的最外表面上具有由无碱二氧化硅制成的防反射膜的阴极射线管，所述防反射膜 当测量红外光谱时，Si-O-Si峰强度与Si-OH峰强度之比为4以上。

    Vapor phase diffusion of aluminum with or without boron
    5.
    发明授权
    Vapor phase diffusion of aluminum with or without boron 失效
    具有或不具有硼的铝的气相扩散

    公开(公告)号：US4193826A

    公开(公告)日：1980-03-18

    申请号：US931399

    申请日：1978-08-07

    申请人： Yasuhiro Mochizuki ,  Hiroaki Hachino ,  Yasumichi Yasuda ,  Yutaka Misawa ,  Takuzo Ogawa

    发明人： Yasuhiro Mochizuki ,  Hiroaki Hachino ,  Yasumichi Yasuda ,  Yutaka Misawa ,  Takuzo Ogawa

    IPC分类号： H01L21/223 ,  H01L21/28

    CPC分类号： H01L21/223

    摘要： A method of fabricating a semiconductor device through selective diffusion of aluminum vapor into a silicon substrate by heating a sealed tube in which the silicon substrate and an aluminum source are disposed. The diffusion is effected with a low concentration of aluminum smaller than about 10.sup.17 atoms/cm.sup.3, thereby making it possible to use a silicon oxide film as a diffusion mask for the selective diffusion of aluminum at predetermined region of the silicon substrate.

    摘要翻译： 一种制造半导体器件的方法，该方法通过加热其中设置有硅衬底和铝源的密封管将铝蒸气选择性地扩散到硅衬底中。 扩散是用小于约1017原子/ cm3的低浓度铝进行的，从而可以使用氧化硅膜作为扩散掩模，用于在硅衬底的预定区域选择性扩散铝。

    Analytical electron microscope and a method of operating such an electron microscope
    6.
    发明授权
    Analytical electron microscope and a method of operating such an electron microscope 失效
    分析电子显微镜和操作这种电子显微镜的方法

    公开(公告)号：US5350921A

    公开(公告)日：1994-09-27

    申请号：US94955

    申请日：1993-07-23

    申请人： Takashi Aoyama ,  Yutaka Misawa

    发明人： Takashi Aoyama ,  Yutaka Misawa

    IPC分类号： H01J37/252 ,  H01J37/26 ,  H01J37/295 ,  H01J49/26 ,  G01N23/00

    CPC分类号： H01J37/252 ,  H01J37/265

    摘要： An analytical electron microscope automatically identifies objects in a sample on the basis of shape of the object, change of thickness of the object and/or change of element (such as change of element type or concentration). Therefore, the operator of the analytical electron microscope can specify a desired object, and an example or examples of that object in a sample can be identified automatically. The characteristics need to identify the object are determined by detecting the effect of the sample on the electron beam of the analytical electron microscope, using, for example, an energy dispersive type X-ray analyzer and an electron energy loss spectrometer. Once an example of the object has been identified, it may be analyzed further. The analytical electron microscope may also analyze a sample to identify and classify the objects present.

    摘要翻译： 分析电子显微镜根据物体的形状，物体的厚度变化和/或元素的变化（例如元件类型或浓度的变化）自动识别样品中的物体。 因此，分析电子显微镜的操作者可以指定期望的对象，并且可以自动识别样品中的该对象的示例或示例。 通过使用例如能量色散型X射线分析仪和电子能量损失光谱仪，通过检测样品对分析电子显微镜的电子束的影响来确定对象的特征。 一旦已经识别出对象的示例，则可以进一步分析该对象的示例。 分析电子显微镜还可以分析样品以鉴别和分类存在的物体。

    Method of fabricating a semiconductor device
    9.
    发明授权
    Method of fabricating a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US4219373A

    公开(公告)日：1980-08-26

    申请号：US1163

    申请日：1979-01-05

    申请人： Yasuhiro Mochizuki ,  Hiroaki Hachino ,  Yutaka Misawa ,  Yoko Wakui

    发明人： Yasuhiro Mochizuki ,  Hiroaki Hachino ,  Yutaka Misawa ,  Yoko Wakui

    IPC分类号： H01L21/225 ,  H01L21/332 ,  H01L21/761

    CPC分类号： H01L29/66393 ,  H01L21/2254 ,  H01L21/761 ,  Y10S438/92

    摘要： A method of fabricating a semiconductor device of the type wherein aluminium layers are selectively deposited on the major surface of a silicon semiconductor substrate and thereafter aluminium is selectively diffused into the silicon semiconductor substrate by means of heat treatment in an atmosphere including an oxygen gas. Recesses are selectively formed in at least one major surface of the silicon semiconductor substrate, aluminium is deposited onto the recesses, and the silicon semiconductor substrate is then subjected to a heat treatment to selectively diffuse the aluminium into the silicon semiconductor substrate. Layers of oxide of silicon-aluminium alloy formed on the major surface subjected to the aluminium diffusion will not cause any damage of a photo-mask and at the same time accuracy in positioning the photo-mask may be improved. A failure to mount a semiconductor element onto a heat sink may also be prevented.

    摘要翻译： 一种制造这样的半导体器件的方法，其中铝层被选择性地沉积在硅半导体衬底的主表面上，此后铝通过在包括氧气的气氛中的热处理而被选择性地扩散到硅半导体衬底中。 在硅半导体衬底的至少一个主表面中选择性地形成凹部，将铝沉积到凹部上，然后对硅半导体衬底进行热处理以选择性地将铝扩散到硅半导体衬底中。 形成在经受铝扩散的主表面上的硅铝合金的氧化物层不会对光掩模造成任何损坏，同时可以提高光掩模的定位精度。 还可以防止将半导体元件安装到散热器上的故障。

    Electron microscope specimen holder
    10.
    发明授权
    Electron microscope specimen holder 失效
    电子显微镜样品架

    公开(公告)号：US5367171A

    公开(公告)日：1994-11-22

    申请号：US965423

    申请日：1992-10-23

    申请人： Takashi Aoyama ,  Kishu Hosoi ,  Yutaka Misawa ,  Koji Kimoto ,  Shigeto Isakozawa ,  Kazuhiro Ueda

    发明人： Takashi Aoyama ,  Kishu Hosoi ,  Yutaka Misawa ,  Koji Kimoto ,  Shigeto Isakozawa ,  Kazuhiro Ueda

    IPC分类号： H01J37/20

    CPC分类号： H01J37/20

    摘要： A specimen cartridge fashioned of a good thermal conductor, with an outer frame being fashioned of heat insulating material, and with a connecting rod being fashioned of a poor thermal conductor. A temperature distribution of the specimen is uniform and a temperature drift is reduced, with a thermal expansion of a specimen cartridge tilting rod not affecting the tilting angle, thereby making it possible to perform various highly accurate observations and measurements with an electron microscope.

    摘要翻译： 由良好的热导体形成的样品盒，外框由绝热材料制成，并且连接杆由不良的导热体构成。 样品盒的温度分布是均匀的并且温度漂移降低，而样品盒倾斜杆的热膨胀不影响倾斜角度，从而可以用电子显微镜进行各种高精度的观测和测量。