Optical information reproduction apparatus having a semiconductor laser
device light source
    1.
    发明授权
    Optical information reproduction apparatus having a semiconductor laser device light source 失效
    具有半导体激光装置光源的光信息再生装置

    公开(公告)号:US5909425A

    公开(公告)日:1999-06-01

    申请号:US844278

    申请日:1997-04-18

    CPC分类号: G11B7/127 H01S5/0658

    摘要: An optical information reproduction apparatus includes a semiconductor laser device as a light source which provides oscillation as periodic pulse waves upon application of a DC current. The semiconductor laser device is disposed so that an optical distance L from a light-emitting point of the semiconductor laser device to a recording surface of an optical recording medium satisfies the following relationship: TP TP+(2L/C), where T is a period of pulse waves which are output from the semiconductor laser device in absence of a returning light from the optical recording medium; TP is a pulse width of the respective pulse waves which is defined as a width of a portion of the respective pulse waves, the portion having intensities which correspond to 10% or more of the peak intensity of the respective pulse waves; and C is a speed of light through air.

    摘要翻译: 光信息再现装置包括作为在施加直流电流时作为周期性脉冲波提供振荡的光源的半导体激光装置。 半导体激光器件被设置为使得从半导体激光器件的发光点到光记录介质的记录表面的光学距离L满足以下关系:TP <(4L / C)和T> TP +(2L / C),其中T是在不存在来自光记录介质的返回光的情况下从半导体激光器件输出的脉冲周期; TP是各个脉波的脉冲宽度,其被定义为各个脉冲波的一部分的宽度,该部分的强度对应于各个脉冲波的峰值强度的10%以上; C是通过空气的光速。

    Semiconductor laser array device
    2.
    发明授权
    Semiconductor laser array device 失效
    半导体激光阵列器件

    公开(公告)号:US4903274A

    公开(公告)日:1990-02-20

    申请号:US195742

    申请日:1988-05-18

    IPC分类号: H01S5/40

    CPC分类号: H01S5/4068

    摘要: A semiconductor laser array device comprising a substrate with a plurality of grooves and an active layer disposed over the substrate, resulting in optical waveguides within the active layer corresponding to the grooves, wherein the grooves are disposed over the entire area of the substrate and a means for preventing the injection of current into some of the grooves that are positioned outside of the central area of the substrate is disposed whereby the other grooves positioned in the central area of the substrate consitute a laser array portion of the semiconductor laser array device.

    摘要翻译: 一种半导体激光器阵列器件,包括具有多个沟槽的衬底和设置在衬底上的有源层,从而产生与沟槽对应的有源层内的光波导,其中沟槽设置在衬底的整个区域上, 用于防止将电流注入到位于基板的中心区域外部的一些凹槽中,由此位于基板的中心区域中的其它凹槽构成半导体激光器阵列器件的激光器阵列部分。

    Semiconductor laser array device
    4.
    发明授权
    Semiconductor laser array device 失效
    半导体激光阵列器件

    公开(公告)号:US4811351A

    公开(公告)日:1989-03-07

    申请号:US35477

    申请日:1987-04-07

    摘要: A semiconductor laser array device comprising a substrate; an index-waveguiding area positioned on said substrate; a Fourier-converting area, which is adjacent to said waveguiding area and in which laser lights emitted with synchronized phases from said waveguiding area undergo the Fourier-conversion, positioned on said substrate; and a reflecting mirror, which is adjacent to said Fourier-converting area and by which said converted laser lights with a 0.degree.-phase shift mode are selectively reflected so as to be incident upon said waveguiding areas.

    摘要翻译: 一种半导体激光器阵列器件,包括衬底; 位于所述基板上的折射率波导区域; 傅里叶变换区域,其邻近所述波导区域,并且其中来自所述波导区域的同步相位发射的激光经历傅里叶变换,位于所述基板上; 以及反射镜,其与所述傅立叶变换区域相邻,并且所述经转换的0°相移模式的激光被选择性地反射以入射到所述波导区域。

    Semiconductor laser array device
    5.
    发明授权
    Semiconductor laser array device 失效
    半导体激光阵列器件

    公开(公告)号:US4742526A

    公开(公告)日:1988-05-03

    申请号:US816311

    申请日:1986-01-06

    CPC分类号: G02B6/2804 H01S5/4068

    摘要: A semiconductor laser array device comprising an optical waveguide which is in a single mode or a multiple mode in the center portion thereof and is in a branching mode at each of both end portions thereof to form a plurality of branching waveguides which are positioned symmetrically with respect to the waveguiding direction of the laser beams and which are parallel to each other near the facets, thereby oscillating laser beams with a 0.degree.-phase shift therebetween.

    摘要翻译: 一种半导体激光器阵列器件,包括在其中心部分处于单一模式或多模式的光波导,并且在其两端部分别处于分支模式,以形成多个分支波导,该分支波导相对于 到激光束的波导方向,并且在面附近彼此平行,从而在其间振荡激光束0°相移。

    Process for preventing melt-back in the production of
aluminum-containing laser devices
    6.
    发明授权
    Process for preventing melt-back in the production of aluminum-containing laser devices 失效
    制造含铝激光装置时防止熔融回收的方法

    公开(公告)号:US4632709A

    公开(公告)日:1986-12-30

    申请号:US781707

    申请日:1985-09-30

    IPC分类号: H01L21/20 H01L21/208 H01S5/00

    摘要: A process for the production of semiconductor devices includes: (1) forming a thin semiconductor film containing no aluminum on a first semiconductor layer containing aluminum that is disposed on a substrate one or more (2) forming channels on said thin semiconductor film in such a manner that the channel or channels reach or go through said first semiconductor layer to expose a portion of said substrate, resulting in a channelled substrate for succeeding crystal growth thereon, and (3) producing by epitaxial growth crystalline layers on said channelled substrate by the use of a crystal growth solution having a supersaturation which is high enough to prevent said first semiconductor layer from undergoing meltback.

    摘要翻译: 一种制造半导体器件的方法包括:(1)在包含铝的第一半导体层上形成不含铝的薄半导体膜,所述第一半导体层设置在基板上一个或多个(2)在所述薄半导体膜上形成沟槽, 通道或通道到达或穿过所述第一半导体层以暴露所述衬底的一部分,导致用于在其上继续晶体生长的沟道衬底,以及(3)通过使用在所述沟道衬底上的外延生长晶体层产生 具有足够高以防止所述第一半导体层经历回熔的过饱和度的晶体生长溶液。

    Semiconductor laser array device
    8.
    发明授权
    Semiconductor laser array device 失效
    半导体激光阵列器件

    公开(公告)号:US4764936A

    公开(公告)日:1988-08-16

    申请号:US901759

    申请日:1986-08-28

    CPC分类号: H01S5/22 H01S5/4031

    摘要: A semiconductor laser array device comprising an oscillation operating area provided with a plurality of first index-waveguides in a parallel manner and a non-oscillation operating area provided with a plurality of second index-waveguides in a parallel manner through which laser light produced in said oscillation operating area are guided through the waveguide from said oscillation operating area to the end facets of the second index-waveguides of said non-oscillation operating area, wherein the second index-waveguides are different in length between the adjacent waveguides and the end facet of each of the second index-waveguides does not function as a cavity facet of the laser but it functions as the light-emitting facet of the device.

    摘要翻译: 一种半导体激光器阵列器件,包括以并行方式设置有多个第一折射率波导的振荡操作区域和以所述平行方式设置有多个第二折射率波导的非振荡操作区域,所述第二折射率波导在所述 振荡操作区域被引导通过波导从所述振荡操作区域到所述非振荡操作区域的第二折射率波导的端面,其中第二折射率波导在相邻波导与端面之间的长度不同 每个第二折射率波导不用作激光器的腔面,但其用作器件的发光面。

    Semiconductor light-emitting apparatus
    10.
    发明授权
    Semiconductor light-emitting apparatus 失效
    半导体发光装置

    公开(公告)号:US4870651A

    公开(公告)日:1989-09-26

    申请号:US127836

    申请日:1987-12-02

    IPC分类号: H01S5/00 H01S5/14 H01S5/40

    CPC分类号: H01S5/14 H01S5/4062

    摘要: A semiconductor light-emitting apparatus comprising a semiconductor laser array device with a plurality of lasing filaments and a mode-mixing device with a striped optical waveguide that attains an optical phase-coupling with the semiconductor laser array device, whereby beams from the semiconductor laser array device are emitted from the light-emitting facet of the semiconductor light-emitting apparatus via the mode-mixing device, thereby attaining a near-field pattern with a minimized ripple rate on the optical intensity.

    摘要翻译: 一种半导体发光装置,包括具有多个激光灯丝的半导体激光器阵列器件和具有带状光波导的模式混合器件,其与半导体激光器阵列器件实现光学相位耦合,由此来自半导体激光器阵列的光束 器件经由模拟混合器件从半导体发光装置的发光面发射,从而获得具有最小纹波率的近场图案对光强度的影响。