公开(公告)号：US5909425A

公开(公告)日：1999-06-01

申请号：US844278

申请日：1997-04-18

申请人： Takahiro Suyama ,  Mitsuhiro Matsumoto ,  Mototaka Taneya

发明人： Takahiro Suyama ,  Mitsuhiro Matsumoto ,  Mototaka Taneya

IPC分类号： G11B7/125 ,  H01S5/00 ,  H01S5/065 ,  G11B7/00

CPC分类号： G11B7/127 ,  H01S5/0658

摘要： An optical information reproduction apparatus includes a semiconductor laser device as a light source which provides oscillation as periodic pulse waves upon application of a DC current. The semiconductor laser device is disposed so that an optical distance L from a light-emitting point of the semiconductor laser device to a recording surface of an optical recording medium satisfies the following relationship: TP TP+(2L/C), where T is a period of pulse waves which are output from the semiconductor laser device in absence of a returning light from the optical recording medium; TP is a pulse width of the respective pulse waves which is defined as a width of a portion of the respective pulse waves, the portion having intensities which correspond to 10% or more of the peak intensity of the respective pulse waves; and C is a speed of light through air.

摘要翻译： 光信息再现装置包括作为在施加直流电流时作为周期性脉冲波提供振荡的光源的半导体激光装置。 半导体激光器件被设置为使得从半导体激光器件的发光点到光记录介质的记录表面的光学距离L满足以下关系：TP <（4L / C）和T> TP +（2L / C），其中T是在不存在来自光记录介质的返回光的情况下从半导体激光器件输出的脉冲周期; TP是各个脉波的脉冲宽度，其被定义为各个脉冲波的一部分的宽度，该部分的强度对应于各个脉冲波的峰值强度的10％以上; C是通过空气的光速。

公开(公告)号：US6023484A

公开(公告)日：2000-02-08

申请号：US694594

申请日：1996-08-09

申请人： Mitsuhiro Matsumoto ,  Takahiro Suyama

发明人： Mitsuhiro Matsumoto ,  Takahiro Suyama

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/2206 ,  H01S5/3054

摘要： The semiconductor laser device of the invention includes: an n-type semiconductor and a semiconductor multi-layer structure formed on the n-type semiconductor. The semiconductor multi-layer structure includes: an active layer; an n-type first cladding layer and a p-type second cladding layer which are disposed so as to sandwich the active layer therebetween; an n-type current/light confinement layer having a stripe-shaped groove portion for injecting a current into a selected region of the active layer; and a p-type third cladding layer formed so as to bury the stripe-shaped groove portion of the n-type current/light confinement layer. In the semiconductor laser device, the current/light confinement layer contains Si as a dopant and the n-type first cladding layer contains substantially no Si as a dopant.

摘要翻译： 本发明的半导体激光器件包括n型半导体和形成在n型半导体上的半导体多层结构。 半导体多层结构包括：有源层; n型第一包层和p型第二包覆层，以将活性层夹在其间; n型电流/光限制层，其具有用于将电流注入到所述有源层的选定区域中的条形槽部; 以及形成为埋入n型电流/光限制层的条形槽部的p型第三覆层。 在半导体激光装置中，电流/光限制层含有Si作为掺杂剂，n型第一包层基本上不含Si作为掺杂剂。

公开(公告)号：US5042044A

公开(公告)日：1991-08-20

申请号：US513508

申请日：1990-04-27

申请人： Masaki Kondo ,  Kazuaki Sasaki ,  Taiji Morimoto ,  Mitsuhiro Matsumoto ,  Hiroyuki Hosoba ,  Sadayoshi Matsui ,  Saburo Yamamoto ,  Takahiro Suyama ,  Masafumi Kondo

发明人： Masaki Kondo ,  Kazuaki Sasaki ,  Taiji Morimoto ,  Mitsuhiro Matsumoto ,  Hiroyuki Hosoba ,  Sadayoshi Matsui ,  Saburo Yamamoto ,  Takahiro Suyama ,  Masafumi Kondo

IPC分类号： H01S5/24 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/32308 ,  H01S5/24 ,  H01S5/3202 ,  H01S5/32325 ,  H01S5/32391

摘要： A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel formed in a semiconductor substrate through a current blocking layer on the substrate and at least two dummy grooves formed in the current blocking layer on each side of the striped channel. Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate, the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions of an angle .theta. satisfying the relationship 0.1.degree.

公开(公告)号：US6055255A

公开(公告)日：2000-04-25

申请号：US790815

申请日：1997-01-30

申请人： Takahiro Suyama ,  Ken Ohbayashi ,  Mitsuhiro Matsumoto

发明人： Takahiro Suyama ,  Ken Ohbayashi ,  Mitsuhiro Matsumoto

IPC分类号： H01S5/06 ,  H01S5/065 ,  H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/0601 ,  H01S5/0658 ,  H01S5/2219

摘要： A semiconductor laser device includes: a semiconductor substrate of a first conductivity type; a layered structure including at least a first cladding layer of the first conductivity type, an active layer, and a second cladding layer of a second conductivity type. The layered structure is provided on the semiconductor substrate. The semiconductor laser device also includes: a current blocking structure, having a striped concave portion therein, formed on the layered structure; and a third cladding layer of the second conductivity type provided so as to cover the striped concave portion and the current blocking structure. The current blocking structure includes at least a saturable absorbing layer having a forbidden band width which is substantially equal to a forbidden band width of the active layer.

摘要翻译： 半导体激光器件包括：第一导电类型的半导体衬底; 包括至少第一导电类型的第一包层，有源层和第二导电类型的第二包层的层状结构。 层状结构设置在半导体基板上。 半导体激光装置还包括：形成在层状结构上的具有条纹凹部的电流阻挡结构; 以及第二导电类型的第三包覆层，以覆盖条纹凹部和电流阻挡结构。 电流阻挡结构至少包括具有禁带宽度的可饱和吸收层，其基本上等于有源层的禁带宽度。

公开(公告)号：USRE34356E

公开(公告)日：1993-08-24

申请号：US905145

申请日：1992-06-23

申请人： Toshiro Hayakawa ,  Takahiro Suyama ,  Saburo Yamamoto

发明人： Toshiro Hayakawa ,  Takahiro Suyama ,  Saburo Yamamoto

IPC分类号： H01S5/042 ,  H01S5/223 ,  H01S5/227 ,  H01S5/323 ,  H01S5/40

CPC分类号： H01S5/4031 ,  H01S5/0425 ,  H01S5/2232 ,  H01S5/2275 ,  H01S5/32308

摘要： A semiconductor laser array includes a plurality of stripe-shaped stimulated regions of the index guide type. A plurality of buried layers are disposed between each of the plurality of stripe-shaped stimulated regions. A light absorption layer is formed in each of the plurality of stripe-shaped stimulated regions so that the stimulated region has the optical loss greater than an buried layer, whereby optical coupling is performed with no phase difference.

公开(公告)号：US4894836A

公开(公告)日：1990-01-16

申请号：US159797

申请日：1988-02-24

申请人： Toshiro Hayakawa ,  Takahiro Suyama ,  Masafumi Kondo ,  Kosei Takahashi

发明人： Toshiro Hayakawa ,  Takahiro Suyama ,  Masafumi Kondo ,  Kosei Takahashi

IPC分类号： G02F1/015 ,  H01L29/04 ,  H01L29/15 ,  H01L29/205 ,  H01L33/06 ,  H01L33/16 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/02 ,  H01S5/32 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01L29/045 ,  H01L29/155 ,  H01L29/205 ,  H01S5/343 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34306

摘要： A semiconductor device using the quantum effect of one dimension that arises in the direction vertical to the plane of a substrate on which the device structure is disposed, wherein the plane of the substrate is substantially the (111) plane.

公开(公告)号：US4845724A

公开(公告)日：1989-07-04

申请号：US136671

申请日：1987-12-22

申请人： Toshiro Hayakawa ,  Takahiro Suyama ,  Kosei Takahashi ,  Masafumi Kondo

发明人： Toshiro Hayakawa ,  Takahiro Suyama ,  Kosei Takahashi ,  Masafumi Kondo

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323

CPC分类号： H01S5/2231 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/2237 ,  H01S5/32316

摘要： A semiconductor laser device comprising a double-heterostructure that is composed of an active layer and a pair of cladding layers sandwiching the active layer therebetween, a striped structure in which current injected into the laser device is confined, the striped structure being constituted by a part of the double-heterostructure, and optical guiding layers positioned between one cladding layer and the active layer and between the active layer and the other cladding layer, wherein the resistance of one optical guiding layer positioned at the striped structure side is higher than that of the other optical guiding layer positioned opposite to the striped structure side.

公开(公告)号：US4841533A

公开(公告)日：1989-06-20

申请号：US920585

申请日：1986-10-17

申请人： Toshiro Hayakawa ,  Takahiro Suyama ,  Masafumi Kondo ,  Kohsei Takahashi ,  Saburo Yamamoto

发明人： Toshiro Hayakawa ,  Takahiro Suyama ,  Masafumi Kondo ,  Kohsei Takahashi ,  Saburo Yamamoto

IPC分类号： H01L21/203 ,  H01S5/00 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/34313 ,  H01S5/3432

摘要： A semiconductor laser device containing a laser oscillation-operating area comprising a superlatticed quantum well region which is composed of layers of GaAs alternating with layers of Al.sub.x Ga.sub.1-x As (0

摘要翻译： 一种包含激光振荡操作区域的半导体激光器件，包括由Al x Ga 1-x As（0

公开(公告)号：US4745612A

公开(公告)日：1988-05-17

申请号：US884554

申请日：1986-07-11

申请人： Toshiro Hayakawa ,  Takahiro Suyama ,  Kohsei Takahashi ,  Masafumi Kondo ,  Saburo Yamamoto

发明人： Toshiro Hayakawa ,  Takahiro Suyama ,  Kohsei Takahashi ,  Masafumi Kondo ,  Saburo Yamamoto

IPC分类号： H01S5/00 ,  H01S5/343 ,  H01S3/19

CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01S5/3432

摘要： The laser device has an Al.sub.x Ga.sub.1-x As (x.gtoreq.0.3) quantum well active region having a thickness of 200 angstroms or less. Al.sub.y Ga.sub.1-y As (y>x) carrier supplying layers sandwich the quantum well active region therebetween. An Al.sub.z Ga.sub.1-z As (z>y) cladding layer is disposed on each of the carrier supplying layers. Finally an Al.sub.w Ga.sub.1-w As (w>z) barrier layer is disposed between each of the carrier supplying layers and each of the cladding layers.

摘要翻译： 激光器件具有厚度为200埃或更小的Al x Ga 1-x As（x> / = 0.3）量子阱有源区。 Al y Ga 1-y As（y> x）载流子供应层夹在其间的量子阱活性区域。 在每个载体供给层上设置AlzGa1-zAs（z> y）包覆层。 最后，在每个载流子供给层和每个包覆层之间设置AlwGa1-wAs（w> z）阻挡层。

公开(公告)号：US5491106A

公开(公告)日：1996-02-13

申请号：US97316

申请日：1993-07-23

申请人： Akinori Seki ,  Hiroyuki Hosoba ,  Toshio Hata ,  Masafumi Kondo ,  Takahiro Suyama ,  Sadayoshi Matsui

发明人： Akinori Seki ,  Hiroyuki Hosoba ,  Toshio Hata ,  Masafumi Kondo ,  Takahiro Suyama ,  Sadayoshi Matsui

IPC分类号： H01L21/20 ,  H01L21/203 ,  H01S5/00 ,  H01S5/223 ,  H01S5/323 ,  H01L21/302

CPC分类号： H01S5/32308 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/02658 ,  H01S5/2231 ,  H01S5/32316

摘要： A method for growing a compound semiconductor layer of Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1) on a compound semiconductor substrate uses a molecular beam epitaxial apparatus, the method including the steps of providing the substrate having a GaAs layer on an upper surface thereof, thermally etching the GaAs layer by heating the substrate at a temperature and irradiating the GaAs layer with a gallium molecular beam and an arsenic molecular beam to expose the upper surface of the substrate, and growing the Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1) layer on the upper surface of the substrate.

摘要翻译： 在化合物半导体衬底上生长Al x Ga 1-x As（0≤x≤1）的化合物半导体层的方法使用分子束外延装置，该方法包括以下步骤：将具有GaAs层的衬底 通过在温度下加热衬底并用镓分子束和砷分子束照射GaAs层来暴露衬底的上表面，并且生长Al x Ga 1-x As（0 < = x <1）层。