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    Method of and system for exposing pattern on object by charged particle beam
    6.
    发明授权
    Method of and system for exposing pattern on object by charged particle beam 失效
    通过带电粒子束对物体曝光图案的方法和系统

    公开(公告)号：US5841145A

    公开(公告)日：1998-11-24

    申请号：US610350

    申请日：1996-03-04

    申请人： Takamasa Satoh ,  Yoshihisa Oae ,  Soichiro Arai ,  Kenichi Miyazawa ,  Hiroshi Yasuda ,  Manabu Ohno ,  Hitoshi Watanabe ,  Junichi Kai ,  Tomohiko Abe ,  Akio Yamada ,  Yasushi Takahashi

    发明人： Takamasa Satoh ,  Yoshihisa Oae ,  Soichiro Arai ,  Kenichi Miyazawa ,  Hiroshi Yasuda ,  Manabu Ohno ,  Hitoshi Watanabe ,  Junichi Kai ,  Tomohiko Abe ,  Akio Yamada ,  Yasushi Takahashi

    IPC分类号： H01J37/302

    CPC分类号： H01J37/3023 ,  H01J2237/3175

    摘要： By using a blanking aperture array BAA, the density of the bit map data in the portions where adjacent areas are linked is decreased toward the outside. On the lower surface of the holder of the BAA chip, a ball grid array wired to blanking electrodes is formed, to be pressed in contact against pads on a wiring base board. The registered bit map data for an isosceles right triangle are read out from address A=A0+�RA.multidot.i! (A0 and i are integers, � ! is an operator for integerizing), masked, and then shifted by bits to be deformed. From registered bit map data for proximity effect correction, the area which corresponds to the size of the object of correction and the required degree of proximity affect correction is extracted, and logic operation with the bit map data of the object of correction is performed to achieve proximity affect correction. Before figures data are expanded into bit map, a checksum is determined in units of bit map data corresponding to the range of one session of scanning over which continuous exposure is possible. A sine wave voltage is provided to an electrostatic deflector and during a one-shot exposure period, an electron beam is caused to scan for an integer number of times on a block of a mask and the positional misalignment of the electron beam at the lower aperture stop is corrected.

    摘要翻译： 通过使用消隐孔径阵列BAA，相邻区域连接的部分中的位图数据的密度朝向外部减小。 在BAA芯片的保持器的下表面上形成布线到消隐电极的球栅阵列，以与接线基板上的焊盘压接。 从地址A = A0 + [RAxi]（A0和i是整数，[]是整数化的运算符）读出等腰直角三角形的注册位图数据，被屏蔽，然后移位以变形。 从用于邻近效应校正的注册位图数据中，提取对应于校正对象的大小的区域和所需的邻近度影响校正程度，并且执行校正对象的位图数据的逻辑运算以实现 近距离影响校正。 在将图形数据扩展为位图之前，以对应于可能进行连续曝光的一次扫描会话的范围的位图数据为单位确定校验和。 向静电偏转器提供正弦波电压，并且在单次曝光期间，使电子束在掩模块上扫描整数次，并且使电子束在下孔处的位置偏移 停止更正。

    Method and system for exposing an exposure pattern on an object by a charged particle beam which is shaped into a plurality of beam elements
    9.
    发明授权
    Method and system for exposing an exposure pattern on an object by a charged particle beam which is shaped into a plurality of beam elements 有权
    用于通过成形为多个光束元件的带电粒子束曝光物体上的曝光图案的方法和系统

    公开(公告)号：US6118129A

    公开(公告)日：2000-09-12

    申请号：US283974

    申请日：1999-04-01

    申请人： Yoshihisa Oae ,  Tomohiko Abe ,  Soichiro Arai ,  Shigeru Maruyama ,  Hiroshi Yasuda ,  Kenichi Miyazawa ,  Junichi Kai ,  Takamasa Satoh ,  Keiichi Betsui ,  Hideki Nasuno

    发明人： Yoshihisa Oae ,  Tomohiko Abe ,  Soichiro Arai ,  Shigeru Maruyama ,  Hiroshi Yasuda ,  Kenichi Miyazawa ,  Junichi Kai ,  Takamasa Satoh ,  Keiichi Betsui ,  Hideki Nasuno

    IPC分类号： H01J37/147 ,  H01J37/30 ,  H01J37/302 ,  H01J37/304 ,  H01J37/317

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3023 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/30416 ,  H01J2237/31762 ,  H01L2223/54466

    摘要： A method for exposing an exposure pattern on an object by a charged particle beam, including the steps of: shaping a charged particle beam into a plurality of charged particle beam elements in response to first bitmap data indicative of an exposure pattern, such that the plurality of charged particle beam elements are selectively turned off in response to the first bitmap data; focusing the charged particle beam elements upon a surface of an object; and scanning the surface of the object by the charged particle beam elements; the step of shaping including the steps of: expanding pattern data of said exposure pattern into second bitmap data having a resolution of n times (n.gtoreq.2) as large as, and m times (m.gtoreq.1) as large as, a corresponding resolution of the first bitmap data, respectively in X- and Y-directions; dividing the second bitmap data into cells each having a size of 2n bits in the X-direction and 2m bits in said Y-direction; and creating the first bitmap data from the second bitmap data by selecting four data bits from each of the cells, such that a selection of the data bits is made in each of the cells with a regularity in the X- and Y-directions and such that the number of rows in the X-direction and the number of columns in the Y-direction are both equal to 3 or more.

    摘要翻译： 一种用于通过带电粒子束曝光在物体上的曝光图案的方法，包括以下步骤：响应于指示曝光图案的第一位图数据，将带电粒子束成形为多个带电粒子束元件，使得多个 响应于第一位图数据选择性地关闭带电粒子束元件; 将带电粒子束元件聚焦在物体的表面上; 并通过带电粒子束元件扫描物体的表面; 整形步骤包括以下步骤：将所述曝光图案的图案数据扩展为分辨率为n倍（n> / = 2）分辨率的第二位图数据，并且m倍（m> / = 1） ，分别在X和Y方向上分别对应的第一位图数据的分辨率; 将第二位图数据分割成在X方向上具有2n位大小和在所述Y方向上具有2m位的单元， 以及通过从每个单元中选择四个数据位来从第二位图数据创建第一位图数据，使得在每个单元格中以X方向和Y方向上的规则性进行数据位的选择， X方向上的行数和Y方向上的列数都等于3或更大。