公开(公告)号：US5721432A

公开(公告)日：1998-02-24

申请号：US670256

申请日：1996-06-20

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

IPC分类号： H01J37/153 ,  H01J37/302 ,  H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/1504

摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.

摘要翻译： 为了提高曝光系统的吞吐量，通过在放大器和偏转器之间的开关电阻来减小放大器的输出的阶跃变化期间的设定时间，在D / A的输出的阶跃变化期间产生的毛刺波形 转换器在放大器的前级被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步进变化，偏转 通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加面积，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标转换来缩小对准时间 在晶片区域和芯片区域。 为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

公开(公告)号：US5719402A

公开(公告)日：1998-02-17

申请号：US626906

申请日：1996-04-04

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

IPC分类号： H01J37/153 ,  H01J37/302 ,  H01J37/317 ,  H01J37/12 ,  H01J37/141

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/1504

摘要： To improve the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector. A glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier is anticipated and is cancelled out with a correction waveform. After the output of the D/A converter has settled, this output is sample-held and the step change is interpolated with a smoothing circuit. The deflection area is increased by positioning an electrostatic deflector offset around the optical axis relative to another electrostatic deflector, and the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turns. The alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.

摘要翻译： 为了提高曝光系统的吞吐量，通过放大器和偏转器之间的开关电阻来减小放大器的输出中的阶跃变化期间的设定时间。 预期在放大器的前级的D / A转换器的输出的阶跃变化期间产生的毛刺波形，并用校正波形抵消。 在D / A转换器的输出稳定之后，该输出被采样保持，并且用平滑电路内插阶跃变化。 通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，并且通过添加一匝或两匝的辅助偏转线圈来改善主偏转的响应速度。 通过组合晶片区域和芯片区域中的坐标转换来减少对准时间。 为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

公开(公告)号：US5965895A

公开(公告)日：1999-10-12

申请号：US964331

申请日：1997-11-04

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

IPC分类号： H01J37/153 ,  H01J37/302 ,  H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/1504

摘要： A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.

摘要翻译： 一种用于向具有多个芯片区域的物体提供带电粒子束曝光的方法，所述多个芯片区域具有与每个所述芯片区域对应形成的多个对准标记。 基于对准标记的位置，将带电粒子束照射在安装在移动台阶上的物体上。 检测对准标记的实际位置并与对准标记的设计位置进行比较，以确定用于计算执行曝光的实际位置的近似关系。

公开(公告)号：US5546319A

公开(公告)日：1996-08-13

申请号：US379712

申请日：1995-01-27

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

IPC分类号： H01J37/153 ,  H01J37/302 ,  H01J37/317 ,  H01J37/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/1504

摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages or coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.

摘要翻译： 为了提高曝光系统的吞吐量，通过在放大器和偏转器之间切换电阻来减小放大器的输出阶跃变化期间的设定时间，在输出的阶跃变化期间产生的毛刺波形或D / 在放大器的前级的A转换器被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步长变化， 通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标 在晶片区域和芯片区域中的转换。 为了校正电磁透镜的散光，设置两级或线圈，并将与偏转量相对应的电流提供给线圈。

公开(公告)号：US5969365A

公开(公告)日：1999-10-19

申请号：US917464

申请日：1997-08-26

申请人： Akio Takemoto ,  Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda ,  Takamasa Satoh ,  Hideki Nasuno ,  Hidefumi Yabara ,  Kenichi Kawakami ,  Kiichi Sakamoto ,  Tomohiro Sakazaki ,  Isamu Seto ,  Masami Takigawa ,  Tatsuro Ohkawa

发明人： Akio Takemoto ,  Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda ,  Takamasa Satoh ,  Hideki Nasuno ,  Hidefumi Yabara ,  Kenichi Kawakami ,  Kiichi Sakamoto ,  Tomohiro Sakazaki ,  Isamu Seto ,  Masami Takigawa ,  Tatsuro Ohkawa

IPC分类号： G21K5/10 ,  H01J37/08 ,  H01J37/302 ,  H01J37/304

CPC分类号： H01J37/147 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/024 ,  H01J2237/1502 ,  H01J2237/1504 ,  H01J2237/216 ,  H01J2237/30472

摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.

公开(公告)号：US06242751B1

公开(公告)日：2001-06-05

申请号：US09353586

申请日：1999-07-15

申请人： Akio Takemoto ,  Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda ,  Takamasa Satoh ,  Hideki Nasuno ,  Hidefumi Yabara ,  Kenichi Kawakami ,  Kiichi Sakamoto ,  Tomohiro Sakazaki ,  Isamu Seto ,  Masami Takigawa ,  Tatsuro Ohkawa

发明人： Akio Takemoto ,  Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda ,  Takamasa Satoh ,  Hideki Nasuno ,  Hidefumi Yabara ,  Kenichi Kawakami ,  Kiichi Sakamoto ,  Tomohiro Sakazaki ,  Isamu Seto ,  Masami Takigawa ,  Tatsuro Ohkawa

IPC分类号： H01J37302

CPC分类号： H01J37/147 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/024 ,  H01J2237/1502 ,  H01J2237/1504 ,  H01J2237/216 ,  H01J2237/30472

摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.

摘要翻译： 通过将晶片引导到晶片，通过偏转器偏转的带电粒子束将晶片暴露于带电粒子束的方法包括以下步骤：在不同的高度处布置多个第一标记，将带电粒子束聚焦在每个 通过使用设置在偏转器上方的聚焦线圈的第一标记，获得每个第一标记的聚焦距离，获得每个第一标记的偏转效率校正系数，并且使用焦距的线性函数来近似偏转 - 效率校正系数，以获得针对焦距的任意值的偏转效率校正系数。 还提出了一种用于执行该方法的装置。

公开(公告)号：US5757015A

公开(公告)日：1998-05-26

申请号：US634410

申请日：1996-04-18

申请人： Akio Takemoto ,  Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda ,  Takamasa Satoh ,  Hideki Nasuno ,  Hidefumi Yabara ,  Kenichi Kawakami ,  Kiichi Sakamoto ,  Tomohiro Sakazaki ,  Isamu Seto ,  Masami Takigawa ,  Tatsuro Ohkawa

发明人： Akio Takemoto ,  Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda ,  Takamasa Satoh ,  Hideki Nasuno ,  Hidefumi Yabara ,  Kenichi Kawakami ,  Kiichi Sakamoto ,  Tomohiro Sakazaki ,  Isamu Seto ,  Masami Takigawa ,  Tatsuro Ohkawa

IPC分类号： G21K5/10 ,  H01J37/08 ,  H01J37/302 ,  H01J37/304

CPC分类号： H01J37/147 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/024 ,  H01J2237/1502 ,  H01J2237/1504 ,  H01J2237/216 ,  H01J2237/30472

摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.

摘要翻译： 通过将晶片引导到晶片，通过偏转器偏转的带电粒子束将晶片暴露于带电粒子束的方法包括以下步骤：在不同的高度处布置多个第一标记，将带电粒子束聚焦在每个 通过使用设置在偏转器上方的聚焦线圈的第一标记，获得每个第一标记的聚焦距离，获得每个第一标记的偏转效率校正系数，并且使用焦距的线性函数来近似偏转 - 效率校正系数，以获得针对焦距的任意值的偏转效率校正系数。 还介绍了一种用于执行该方法的设备。

公开(公告)号：US06399954B1

公开(公告)日：2002-06-04

申请号：US09241576

申请日：1999-02-02

申请人： Isamu Seto ,  Atsushi Saito ,  Hidefumi Yabara

发明人： Isamu Seto ,  Atsushi Saito ,  Hidefumi Yabara

IPC分类号： H01J37302

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3174 ,  H01J2237/30466

摘要： Disclosed is a charged-particle beam lithography apparatus capable of readily detecting an abnormality in controlling the on-off operation of a charged-particle beam. The charged-particle beam lithography apparatus consists of a charged-particle beam generator, a charged-particle beam reshaping unit, a charged-particle beam converging unit, a charged-particle beam deflecting unit, a blanking unit, a digital converting circuit, and a comparing circuit. The blanking unit produces a blanking signal used to control the on-off operation of a charged-particle beam according to exposure pattern data, and thus controls the on-off operation of the charged-particle beam. The digital converting circuit produces a blanking data signal that is a digital signal indicating a variation of the blanking signal. The comparing circuit compares the blanking data signal with the exposure pattern data. It is detected whether the on-off operation of the charged-particle beam is controlled according to the exposure pattern data.

摘要翻译： 公开了一种能够容易地检测控制带电粒子束的开关动作的异常的带电粒子束光刻装置。 带电粒子束光刻设备由带电粒子束发生器，带电粒子束整形单元，带电粒子束会聚单元，带电粒子束偏转单元，消隐单元，数字转换电路和 比较电路。 消隐单元根据曝光图案数据产生用于控制带电粒子束的开 - 关操作的消隐信号，从而控制带电粒子束的开 - 关操作。 数字转换电路产生消隐数据信号，该消隐数据信号是指示消隐信号变化的数字信号。 比较电路将消隐数据信号与曝光图案数据进行比较。 检测根据曝光图案数据是否控制带电粒子束的开 - 关操作。

公开(公告)号：US08624205B2

公开(公告)日：2014-01-07

申请号：US12683158

申请日：2010-01-06

申请人： Isamu Seto ,  Yoshio Suzaki ,  Masamichi Kuwabara

发明人： Isamu Seto ,  Yoshio Suzaki ,  Masamichi Kuwabara

IPC分类号： H01J37/147 ,  G21K5/04 ,  G21K1/08 ,  G03F7/20

CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G21K1/025 ,  G21K1/08 ,  G21K2201/00

摘要： A charged particle beam writing apparatus includes an aperture array configured to be capable of forming a plurality of charged particle beams using a plurality of openings, an element array including a plurality of main elements and a plurality of auxiliary elements different from the main elements, and a control unit configured to acquire information associated with a defect of the plurality of main elements and control the element array in accordance with the information, wherein the control unit controls the element array such that only the main elements are used when there is no defect, while when there is a main element having a defect, an auxiliary element is used without using the main element having the defect.

摘要翻译： 带电粒子束写入装置包括孔阵列，其被构造成能够使用多个开口形成多个带电粒子束，元件阵列包括多个主要元件和与主要元件不同的多个辅助元件，以及 控制单元，其被配置为获取与所述多个主要元件的缺陷相关联的信息，并且根据所述信息来控制所述元件阵列，其中所述控制单元控制所述元件阵列，使得当没有缺陷时仅使用所述主要元件， 而当存在具有缺陷的主元件时，使用辅助元件而不使用具有缺陷的主元件。

公开(公告)号：US20100178602A1

公开(公告)日：2010-07-15

申请号：US12683158

申请日：2010-01-06

申请人： Isamu Seto ,  Yoshio Suzaki ,  Masamichi Kuwabara

发明人： Isamu Seto ,  Yoshio Suzaki ,  Masamichi Kuwabara

IPC分类号： H01J37/147 ,  G21K5/04 ,  G21K1/08 ,  G03F7/20

CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G21K1/025 ,  G21K1/08 ,  G21K2201/00

摘要： A charged particle beam writing apparatus includes an aperture array configured to be capable of forming a plurality of charged particle beams using a plurality of openings, an element array including a plurality of main elements and a plurality of auxiliary elements different from the main elements, and a control unit configured to acquire information associated with a defect of the plurality of main elements and control the element array in accordance with the information, wherein the control unit controls the element array such that only the main elements are used when there is no defect, while when there is a main element having a defect, an auxiliary element is used without using the main element having the defect.

摘要翻译： 带电粒子束写入装置包括孔阵列，其被构造成能够使用多个开口形成多个带电粒子束，元件阵列包括多个主要元件和与主要元件不同的多个辅助元件，以及 控制单元，其被配置为获取与所述多个主要元件的缺陷相关联的信息，并且根据所述信息来控制所述元件阵列，其中所述控制单元控制所述元件阵列，使得当没有缺陷时仅使用所述主要元件， 而当存在具有缺陷的主元件时，使用辅助元件而不使用具有缺陷的主元件。