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    Chemically amplified positive resist composition and patterning method
    1.
    发明授权
    Chemically amplified positive resist composition and patterning method 有权
    化学扩增阳性抗蚀剂组合物和图案化方法

    公开(公告)号：US06593056B2

    公开(公告)日：2003-07-15

    申请号：US09814049

    申请日：2001-03-22

    申请人： Takanobu Takeda ,  Jun Watanabe ,  Katsuya Takemura ,  Kenji Koizumi

    发明人： Takanobu Takeda ,  Jun Watanabe ,  Katsuya Takemura ,  Kenji Koizumi

    IPC分类号： G03F7039

    CPC分类号： G03F7/0045 ,  G03F7/027 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/40 ,  Y10S430/106

    摘要： A chemically amplified, positive resist composition comprising an organic solvent, a polymer having acid labile groups, a photoacid generator, a basic compound, and a compound containing at least two allyloxy groups is provided. The resist composition has a high sensitivity, resolution, dry etching resistance and process adaptability, and is improved in the slimming of a pattern film after development with an aqueous base solution. The resist composition is also applicable to the thermal flow process suited for forming a microsize contact hole pattern for the fabrication of VLSI.

    摘要翻译： 提供了包含有机溶剂，具有酸不稳定基团的聚合物，光酸产生剂，碱性化合物和含有至少两个烯丙氧基的化合物的化学增幅阳性抗蚀剂组合物。 抗蚀剂组合物具有高灵敏度，分辨率，耐干蚀刻性和工艺适应性，并且在碱性水溶液显影后使图案膜减薄得到改善。 抗蚀剂组合物也适用于适于形成用于制造VLSI的微尺寸接触孔图案的热流程。

    Patterning process
    6.
    发明授权
    Patterning process 有权
    图案化过程

    公开(公告)号：US08741548B2

    公开(公告)日：2014-06-03

    申请号：US12194129

    申请日：2008-08-19

    申请人： Jun Hatakeyama ,  Takao Yoshihara ,  Katsuya Takemura ,  Yoshio Kawai

    发明人： Jun Hatakeyama ,  Takao Yoshihara ,  Katsuya Takemura ,  Yoshio Kawai

    IPC分类号： G03F7/30 ,  G03F7/40 ,  G03F7/38 ,  G03F7/039

    CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/38 ,  H01L21/0274 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139

    摘要： A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of up to 180 nm wavelength or EB; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half.

    摘要翻译： 通过将第一正性抗蚀剂组合物施加到基材上，热处理，曝光，热处理和显影以形成第一抗蚀剂图案而形成图案; 使得第一抗蚀剂图案通过辐射高达180nm波长或EB的高能量辐射而交联和固化; 进一步将第二正性抗蚀剂组合物施加到基材上，进行热处理，曝光，热处理和显影以形成第二抗蚀剂图案。 双重图案化工艺将图案之间的间距缩小到一半。

    Double patterning process
    7.
    发明授权
    Double patterning process 有权
    双重图案化工艺

    公开(公告)号：US08129100B2

    公开(公告)日：2012-03-06

    申请号：US12418090

    申请日：2009-04-03

    申请人： Katsuya Takemura ,  Jun Hatakeyama ,  Kazumi Noda ,  Mutsuo Nakashima ,  Masaki Ohashi ,  Toshinobu Ishihara

    发明人： Katsuya Takemura ,  Jun Hatakeyama ,  Kazumi Noda ,  Mutsuo Nakashima ,  Masaki Ohashi ,  Toshinobu Ishihara

    IPC分类号： G03F7/11 ,  G03F7/20 ,  G03F7/40 ,  G03F7/039

    CPC分类号： G03F7/0035 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/40

    摘要： Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer.

    摘要翻译： 通过涂覆化学放大的正性抗蚀剂组合物形成双重图案，所述正性抗蚀剂组合物包含含酸不稳定基团的树脂和光致酸发生剂和预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能量辐射，PEB和显影 用碱性显影剂形成正的抗蚀剂图案，将正性抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆负性抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能辐射PEB， 并用碱性显影剂显影以形成负的抗蚀剂图案。 最后的显影步骤包括将已被转化为可溶于显影剂的正性抗蚀图案溶解的反转移步骤。

    Fine contact hole forming method employing thermal flow process
    8.
    发明授权
    Fine contact hole forming method employing thermal flow process 有权
    采用热流程的精细接触孔成型方法

    公开(公告)号：US07344827B2

    公开(公告)日：2008-03-18

    申请号：US10838955

    申请日：2004-05-04

    申请人： Katsuya Takemura ,  Akihiro Seki ,  Eiji Fukuda

    发明人： Katsuya Takemura ,  Akihiro Seki ,  Eiji Fukuda

    IPC分类号： G03F7/00

    CPC分类号： G03F7/40 ,  H01L21/76802

    摘要： Provided is a contact hole forming method, wherein in a thermal flow step the contact hole size can be fixed after thermal flow even if the resist material lot changes, or, wherein at the same bake temperature the contracted size, namely the flow amount, can be fixed. More specifically, provided is a contact hole forming method comprising a step of coating a resist material onto a substrate, a step of heating the coated resist material, a step of exposing the heated resist material to light through a photo mask adapted for a contact hole pattern, a step of heating the exposed resist material, a step of forming the contact hole pattern subsequently by developing with a developing fluid and a step of thermal flow treatment for heating the obtained contact hole pattern, wherein the resist material comprises an organic compound which does not react with the other components within the resist material and does not change a resolution property, and wherein when the resist material lot is changed, an amount of the organic compound to be added is changed so as to keep the contact hole pattern identical before and after the lot change.

    摘要翻译： 提供一种接触孔形成方法，其中在热流动步骤中，即使抗蚀剂材料批次改变，接触孔尺寸也可以在热流动之后固定，或者其中在相同的烘烤温度下，收缩尺寸即流量可以 被固定。 更具体地，提供了一种接触孔形成方法，包括将抗蚀剂材料涂覆到基底上的步骤，加热涂覆的抗蚀剂材料的步骤，将经加热的抗蚀剂材料曝光到通过适于接触孔的光掩模的步骤 图案，加热曝光的抗蚀剂材料的步骤，随后通过用显影液显影形成接触孔图案的步骤和用于加热所获得的接触孔图案的热流动处理步骤，其中抗蚀剂材料包含有机化合物，其中 不与抗蚀剂材料内的其它成分反应，也不会改变分辨率，并且，当改变抗蚀剂材料批次时，改变添加的有机化合物的量，以便使接触孔图案保持在相同之前 经过多次变更。