利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

315 条记录 (耗时 0.038 秒)

    Resist compositions and patterning process
    5.
    发明授权
    Resist compositions and patterning process 有权
    抗蚀剂组合物和图案化工艺

    公开(公告)号：US06541179B2

    公开(公告)日：2003-04-01

    申请号：US09811695

    申请日：2001-03-20

    申请人： Jun Hatakeyama ,  Youichi Ohsawa ,  Tsunehiro Nishi ,  Jun Watanabe

    发明人： Jun Hatakeyama ,  Youichi Ohsawa ,  Tsunehiro Nishi ,  Jun Watanabe

    IPC分类号： G03F7004

    CPC分类号： G03F7/0382 ,  G03F7/0045 ,  G03F7/0395 ,  Y10S430/122

    摘要： A resist composition contains a base resin, a photoacid generator, and a solvent. The photoacid generator is a sulfonium salt of formula (1). R1 is a monovalent cyclic or bridgedring C3-20, hydrocarbon group, R2 is hydroxyl, nitro, halogen, or a straight, branched or cyclic monovalent C1-15 hydrocarbon group which may contain O, N, S or halogen atom, K− is a non-nucleophilic counter ion, x is equal to 1 or 2, and y is an integer of 0-3. The resist composition is sensitive to ArF excimer laser light, has good sensitivity and resolution, and forms a thick film which is advantageous in etching.

    摘要翻译： 抗蚀剂组合物含有基础树脂，光致酸产生剂和溶剂。 光致酸产生剂是式（1）的锍盐，R1是一价环状或桥连的C3-20，烃基，R2是羟基，硝基，卤素或直链，支链或环状的一价C1-15烃基，其可以 含有O，N，S或卤原子，K-是非亲核反离子，x等于1或2，y是0-3的整数。 抗蚀剂组合物对ArF准分子激光敏感，具有良好的灵敏度和分辨率，并形成有利于蚀刻的厚膜。

    Chemical amplification, positive resist compositions
    6.
    发明授权
    Chemical amplification, positive resist compositions 有权
    化学放大，正光刻胶组合物

    公开(公告)号：US06682869B2

    公开(公告)日：2004-01-27

    申请号：US09799052

    申请日：2001-03-06

    申请人： Youichi Ohsawa ,  Jun Watanabe ,  Takanobu Takeda ,  Akihiro Seki

    发明人： Youichi Ohsawa ,  Jun Watanabe ,  Takanobu Takeda ,  Akihiro Seki

    IPC分类号： G03F7004

    CPC分类号： G03F7/0397 ,  G03F7/0392 ,  G03F7/0758 ,  Y10S430/106

    摘要： A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: Ph—(CH2)nOCH(CH2CH3)— wherein Ph is phenyl and n=1 or 2. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.

    摘要翻译： 提供化学放大正性抗蚀剂组合物，其包含（A）光酸产生剂和（B）在酸的作用下改变其在碱显影剂中的溶解度并具有下式的取代基的树脂：Ph-（CH 2）n OCH（CH 2 CH 3 ） - 其中Ph是苯基并且n = 1或2.组合物具有许多优点，包括改进的焦点纬度，改进的分辨率，最小化的线宽变化或形状退化，即使在长期PED上，涂覆后剩余的最小化缺陷，显影和剥离， 并且在显影后改进的图案轮廓，并且适用于通过任何光刻，特别是深UV光刻的微细加工。

    Chemically amplified positive resist composition and patterning method
    8.
    发明授权
    Chemically amplified positive resist composition and patterning method 有权
    化学扩增阳性抗蚀剂组合物和图案化方法

    公开(公告)号：US06593056B2

    公开(公告)日：2003-07-15

    申请号：US09814049

    申请日：2001-03-22

    申请人： Takanobu Takeda ,  Jun Watanabe ,  Katsuya Takemura ,  Kenji Koizumi

    发明人： Takanobu Takeda ,  Jun Watanabe ,  Katsuya Takemura ,  Kenji Koizumi

    IPC分类号： G03F7039

    CPC分类号： G03F7/0045 ,  G03F7/027 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/40 ,  Y10S430/106

    摘要： A chemically amplified, positive resist composition comprising an organic solvent, a polymer having acid labile groups, a photoacid generator, a basic compound, and a compound containing at least two allyloxy groups is provided. The resist composition has a high sensitivity, resolution, dry etching resistance and process adaptability, and is improved in the slimming of a pattern film after development with an aqueous base solution. The resist composition is also applicable to the thermal flow process suited for forming a microsize contact hole pattern for the fabrication of VLSI.

    摘要翻译： 提供了包含有机溶剂，具有酸不稳定基团的聚合物，光酸产生剂，碱性化合物和含有至少两个烯丙氧基的化合物的化学增幅阳性抗蚀剂组合物。 抗蚀剂组合物具有高灵敏度，分辨率，耐干蚀刻性和工艺适应性，并且在碱性水溶液显影后使图案膜减薄得到改善。 抗蚀剂组合物也适用于适于形成用于制造VLSI的微尺寸接触孔图案的热流程。