公开(公告)号：US6156481A

公开(公告)日：2000-12-05

申请号：US428911

申请日：1999-10-28

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Jun Watanabe ,  Jun Hatakeyama ,  Youichi Ohsawa ,  Toshinobu Ishihara

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Jun Watanabe ,  Jun Hatakeyama ,  Youichi Ohsawa ,  Toshinobu Ishihara

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/111

摘要： A hydroxystyrene-(meth)acrylate copolymer in which some phenolic hydroxyl groups are crosslinked with acid labile groups is blended as a base resin in a positive resist composition, which has the advantages of enhanced dissolution inhibition and an increased dissolution contrast after exposure.

摘要翻译： 将一些酚羟基与酸不稳定基团交联的羟基苯乙烯 - （甲基）丙烯酸酯共聚物作为基础树脂掺入正性抗蚀剂组合物中，其具有增强的溶解抑制和暴露后溶解度增加的优点。

公开(公告)号：US07977027B2

公开(公告)日：2011-07-12

申请号：US11876298

申请日：2007-10-22

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Ryuji Koitabashi ,  Tamotsu Watanabe

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Ryuji Koitabashi ,  Tamotsu Watanabe

IPC分类号： G03F7/039 ,  G03F7/26

CPC分类号： G03F7/0045 ,  G03F7/0392

摘要： A chemically amplified positive resist composition comprises a compound having an amine oxide structure as a basic component, a base resin, a photoacid generator, and an organic solvent. The resist composition exhibits a high resolution, significantly prevents a line pattern from collapsing after development, and has improved etch resistance.

摘要翻译： 化学放大正型抗蚀剂组合物包含具有胺氧化物结构作为碱性组分的化合物，基础树脂，光酸产生剂和有机溶剂。 抗蚀剂组合物显示高分辨率，显着地防止显影后线图案塌陷，并且具有改善的耐蚀刻性。

公开(公告)号：US06838224B2

公开(公告)日：2005-01-04

申请号：US09799009

申请日：2001-03-06

申请人： Youichi Ohsawa ,  Jun Watanabe ,  Takanobu Takeda ,  Akihiro Seki

发明人： Youichi Ohsawa ,  Jun Watanabe ,  Takanobu Takeda ,  Akihiro Seki

IPC分类号： G03F7/028 ,  G03F7/039 ,  G03C1/73

CPC分类号： G03F7/0392 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/126

摘要： A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: C6H11—(CH2)nOCH(CH2CH3)— wherein C6H11 is cyclohexyl and n=0 or 1. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.

公开(公告)号：US06682869B2

公开(公告)日：2004-01-27

申请号：US09799052

申请日：2001-03-06

申请人： Youichi Ohsawa ,  Jun Watanabe ,  Takanobu Takeda ,  Akihiro Seki

发明人： Youichi Ohsawa ,  Jun Watanabe ,  Takanobu Takeda ,  Akihiro Seki

IPC分类号： G03F7004

CPC分类号： G03F7/0397 ,  G03F7/0392 ,  G03F7/0758 ,  Y10S430/106

摘要： A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: Ph—(CH2)nOCH(CH2CH3)— wherein Ph is phenyl and n=1 or 2. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.

摘要翻译： 提供化学放大正性抗蚀剂组合物，其包含（A）光酸产生剂和（B）在酸的作用下改变其在碱显影剂中的溶解度并具有下式的取代基的树脂：Ph-（CH 2）n OCH（CH 2 CH 3 ） - 其中Ph是苯基并且n = 1或2.组合物具有许多优点，包括改进的焦点纬度，改进的分辨率，最小化的线宽变化或形状退化，即使在长期PED上，涂覆后剩余的最小化缺陷，显影和剥离， 并且在显影后改进的图案轮廓，并且适用于通过任何光刻，特别是深UV光刻的微细加工。

公开(公告)号：US06541179B2

公开(公告)日：2003-04-01

申请号：US09811695

申请日：2001-03-20

申请人： Jun Hatakeyama ,  Youichi Ohsawa ,  Tsunehiro Nishi ,  Jun Watanabe

发明人： Jun Hatakeyama ,  Youichi Ohsawa ,  Tsunehiro Nishi ,  Jun Watanabe

IPC分类号： G03F7004

CPC分类号： G03F7/0382 ,  G03F7/0045 ,  G03F7/0395 ,  Y10S430/122

摘要： A resist composition contains a base resin, a photoacid generator, and a solvent. The photoacid generator is a sulfonium salt of formula (1). R1 is a monovalent cyclic or bridgedring C3-20, hydrocarbon group, R2 is hydroxyl, nitro, halogen, or a straight, branched or cyclic monovalent C1-15 hydrocarbon group which may contain O, N, S or halogen atom, K− is a non-nucleophilic counter ion, x is equal to 1 or 2, and y is an integer of 0-3. The resist composition is sensitive to ArF excimer laser light, has good sensitivity and resolution, and forms a thick film which is advantageous in etching.

摘要翻译： 抗蚀剂组合物含有基础树脂，光致酸产生剂和溶剂。 光致酸产生剂是式（1）的锍盐，R1是一价环状或桥连的C3-20，烃基，R2是羟基，硝基，卤素或直链，支链或环状的一价C1-15烃基，其可以 含有O，N，S或卤原子，K-是非亲核反离子，x等于1或2，y是0-3的整数。 抗蚀剂组合物对ArF准分子激光敏感，具有良好的灵敏度和分辨率，并形成有利于蚀刻的厚膜。

公开(公告)号：US06692893B2

公开(公告)日：2004-02-17

申请号：US09983155

申请日：2001-10-23

申请人： Youichi Ohsawa ,  Jun Watanabe ,  Takeshi Nagata ,  Jun Hatakeyama

发明人： Youichi Ohsawa ,  Jun Watanabe ,  Takeshi Nagata ,  Jun Hatakeyama

IPC分类号： G03C173

CPC分类号： G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126

摘要： Onium salts of arylsulfonyloxynaphthalenesulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, improved focal latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.

摘要翻译： 芳基磺酰氧基萘磺酸盐与碘鎓或锍阳离子的鎓盐是新颖的。 包含作为光致酸发生剂的鎓盐的化学放大抗蚀剂组合物特别适用于微细加工，特别是通过深紫外光刻技术，因为许多优点，包括改进的分辨率，改善的焦点纬度，最小化的线宽变化或甚至在长期PED下的形状退化 涂层，显影和剥离后的碎屑，以及显影后改进的图案轮廓。

公开(公告)号：US5847218A

公开(公告)日：1998-12-08

申请号：US811530

申请日：1997-03-04

申请人： Youichi Ohsawa ,  Satoshi Watanabe ,  Junji Shimada ,  Katsuya Takemura ,  Shigehiro Nagura ,  Toshinobu Ishihara

发明人： Youichi Ohsawa ,  Satoshi Watanabe ,  Junji Shimada ,  Katsuya Takemura ,  Shigehiro Nagura ,  Toshinobu Ishihara

IPC分类号： C07C381/12 ,  G03F7/004 ,  G03F7/029 ,  G03F7/039 ,  H01L21/027 ,  C07C211/44

CPC分类号： C07C381/12 ,  G03F7/0045

摘要： The invention provides a novel sulfonium salt having a substituted or unsubstituted arylsulfonate anion. The novel sulfonium salt minimizes the influence of deactivation by basic compounds not only at a resist surface, but also at a resist-substrate interface, assists a resist to be configured to a definite pattern profile. When the sulfonium salt has an acid labile group, it is effective for increasing the dissolution contrast between exposed and unexposed areas. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.

摘要翻译： 本发明提供了具有取代或未取代的芳基磺酸根阴离子的新型锍盐。 新型锍盐不仅在抗蚀剂表面，而且在抗蚀剂 - 基材界面处，使碱性化合物失活的影响最小化，有助于将抗蚀剂配置成确定的图案轮廓。 当锍盐具有酸不稳定基团时，对于增加暴露区域和未暴露区域之间的溶解度对比度是有效的。 锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

公开(公告)号：US5569784A

公开(公告)日：1996-10-29

申请号：US379987

申请日：1995-01-27

申请人： Satoshi Watanabe ,  Junji Shimada ,  Youichi Ohsawa ,  Katsuya Takemura ,  Toshinobu Ishihara ,  Kazumasa Maruyama

发明人： Satoshi Watanabe ,  Junji Shimada ,  Youichi Ohsawa ,  Katsuya Takemura ,  Toshinobu Ishihara ,  Kazumasa Maruyama

IPC分类号： C07C381/12 ,  G03F7/004 ,  G03F7/039 ,  C07C217/48

CPC分类号： C07C381/12 ,  G03F7/0045 ,  G03F7/039

摘要： A novel sulfonium salt having at least one substituted aromatic group having acid labile groups and at least one nitrogenous aromatic group is provided. A chemically amplified, positive resist composition comprising the sulfonium salt as well as an alkali soluble resin and a dissolution inhibitor in an organic solvent has solved the PED problem.

摘要翻译： 提供具有至少一个具有酸不稳定基团和至少一个含氮芳族基团的取代芳族基团的新型锍盐。 在有机溶剂中包含锍盐以及碱溶性树脂和溶解抑制剂的化学增幅阳性抗蚀剂组合物解决了PED问题。

公开(公告)号：US5691112A

公开(公告)日：1997-11-25

申请号：US762861

申请日：1996-12-10

申请人： Satoshi Watanabe ,  Youichi Ohsawa ,  Toshinobu Ishihara ,  Kazumasa Maruyama ,  Yoshihumi Takeda ,  Junji Shimada ,  Fujio Yagihashi ,  Katsuya Takemura

发明人： Satoshi Watanabe ,  Youichi Ohsawa ,  Toshinobu Ishihara ,  Kazumasa Maruyama ,  Yoshihumi Takeda ,  Junji Shimada ,  Fujio Yagihashi ,  Katsuya Takemura

IPC分类号： C07C317/22 ,  C07C381/12 ,  G03F7/004

CPC分类号： G03F7/0045 ,  C07C317/22 ,  C07C381/12

摘要： Trifluoromethanesulfonic and p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salts are novel. They are prepared from bis(p-tert-butoxyphenyl)sulfoxide which is also novel. A chemically amplified positive resist composition which contains the sulfonium salt as a photo-acid generator is highly sensitive to deep-UV rays, electron beams and X-rays, can be developed with alkaline aqueous solution to form a pattern, and is thus suitable for use in a fine patterning technique.

摘要翻译： 三氟甲磺酸和对甲苯磺酸双或三（对叔丁氧基苯基）锍盐是新颖的。 它们由双（对叔丁氧基苯基）亚砜制备，也是新的。 含有锍盐作为光酸发生剂的化学增幅正性抗蚀剂组合物对深紫外线，电子束和X射线高度敏感，可以用碱性水溶液显影形成图案，因此适用于 使用精细图案化技术。

公开(公告)号：US5633409A

公开(公告)日：1997-05-27

申请号：US379986

申请日：1995-01-27

申请人： Satoshi Watanabe ,  Youichi Ohsawa ,  Toshinobu Ishihara ,  Kazumasa Maruyama ,  Yoshihumi Takeda ,  Junji Shimada ,  Fujio Yagihashi ,  Katsuya Takemura

发明人： Satoshi Watanabe ,  Youichi Ohsawa ,  Toshinobu Ishihara ,  Kazumasa Maruyama ,  Yoshihumi Takeda ,  Junji Shimada ,  Fujio Yagihashi ,  Katsuya Takemura

IPC分类号： C07C317/22 ,  C07C381/12 ,  G03F7/004 ,  C07C319/00

CPC分类号： G03F7/0045 ,  C07C317/22 ,  C07C381/12

摘要： Trifluoromethanesulfonic and p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salts are novel. They are prepared from bis(p-tert-butoxyphenyl)sulfoxide which is also novel. A chemically amplified positive resist composition which contains the sulfonium salt as a photo-acid generator is highly sensitive to deep-UV rays, electron beams and X-rays, can be developed with alkaline aqueous solution to form a pattern, and is thus suitable for use in a fine patterning technique.

摘要翻译： 三氟甲磺酸和对甲苯磺酸双或三（对叔丁氧基苯基）锍盐是新颖的。 它们由双（对叔丁氧基苯基）亚砜制备，也是新的。 含有锍盐作为光酸发生剂的化学增幅正性抗蚀剂组合物对深紫外线，电子束和X射线高度敏感，可以用碱性水溶液显影形成图案，因此适用于 使用精细图案化技术。