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    SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    固态图像拾取装置及其制造方法

    公开(公告)号：US20120267747A1

    公开(公告)日：2012-10-25

    申请号：US13512313

    申请日：2010-11-29

    申请人： Takanori Watanabe ,  Masatsugu Itahashi ,  Masahiro Kobayashi ,  Hideo Kobayashi ,  Tetsuya Fudaba ,  Takeshi Ichikawa

    发明人： Takanori Watanabe ,  Masatsugu Itahashi ,  Masahiro Kobayashi ,  Hideo Kobayashi ,  Tetsuya Fudaba ,  Takeshi Ichikawa

    IPC分类号： H01L31/02

    CPC分类号： H01L27/14609 ,  H01L27/14683

    摘要： A solid-state image pickup device according to the present invention is a backside-illuminated solid-state image pickup device that includes a plurality of pixels each having a photoelectric conversion portion. A p-type semiconductor region 110 in which holes are collected is disposed on the front side of a PD substrate 101. An n-type semiconductor region 119 is disposed below the p-type semiconductor region 110 on the back side of the PD substrate 101. The n-type semiconductor region 119 contains arsenic as a principal impurity. The photoelectric conversion portion includes the p-type semiconductor region 110 and the n-type semiconductor region 119.

    摘要翻译： 根据本发明的固态图像拾取装置是包括多个像素的背面照明固态图像拾取装置，每个像素具有光电转换部分。 在PD基板101的正面设置有收集有空穴的p型半导体区域110.在PD基板101的背侧的p型半导体区域110的下方配置n型半导体区域119 n型半导体区域119含有砷作为主要杂质。 光电转换部分包括p型半导体区域110和n型半导体区域119。

    Solid-state imaging apparatus with each pixel including a photoelectric converter portion and plural holding portions
    2.
    发明授权
    Solid-state imaging apparatus with each pixel including a photoelectric converter portion and plural holding portions 有权
    每个像素包括光电转换器部分和多个保持部分的固态成像装置

    公开(公告)号：US08625010B2

    公开(公告)日：2014-01-07

    申请号：US12933471

    申请日：2009-04-30

    申请人： Yuichiro Yamashita ,  Masahiro Kobayashi ,  Takanori Watanabe ,  Shinsuke Kojima ,  Takeshi Ichikawa ,  Yusuke Onuki

    发明人： Yuichiro Yamashita ,  Masahiro Kobayashi ,  Takanori Watanabe ,  Shinsuke Kojima ,  Takeshi Ichikawa ,  Yusuke Onuki

    IPC分类号： H04N5/335

    CPC分类号： H04N5/378 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/359 ,  H04N5/37452 ,  H04N5/37457

    摘要： A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.

    摘要翻译： 一种固态成像装置，包括多个像素，每个像素包括：第一保持部分，用于保持来自光电转换部分的信号载流子; 放大部分，用于基于在光电转换部分中产生的信号载波放大和读取信号; 以及用于将光电转换部分中的载流子放电到OFD区域的载流子放电控制部分，并且在光电转换部分和第一载流子保持部分之间具有载流子路径，其中固态成像装置还包括第二载体 保持部分，当从光电转换部分的输出节点观察时，通过第一传送单元并联地与第一载体部分电连接，从而平滑电影成像而不引起不连续帧，同时抑制噪声混合到电荷载体保持部分的产生 。

    SOLID-STATE IMAGING APPARATUS
    3.
    发明申请
    SOLID-STATE IMAGING APPARATUS 有权
    固态成像装置

    公开(公告)号：US20110007196A1

    公开(公告)日：2011-01-13

    申请号：US12933471

    申请日：2009-04-30

    申请人： Yuichiro Yamashita ,  Masahiro Kobayashi ,  Takanori Watanabe ,  Shinsuke Kojima ,  Takeshi Ichikawa ,  Yusuke Onuki

    发明人： Yuichiro Yamashita ,  Masahiro Kobayashi ,  Takanori Watanabe ,  Shinsuke Kojima ,  Takeshi Ichikawa ,  Yusuke Onuki

    IPC分类号： H04N5/335

    CPC分类号： H04N5/378 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/359 ,  H04N5/37452 ,  H04N5/37457

    摘要： A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.

    摘要翻译： 一种固态成像装置，包括多个像素，每个像素包括：第一保持部分，用于保持来自光电转换部分的信号载流子; 放大部分，用于基于在光电转换部分中产生的信号载波放大和读取信号; 以及用于将光电转换部分中的载流子放电到OFD区域的载流子放电控制部分，并且在光电转换部分和第一载流子保持部分之间具有载流子路径，其中固态成像装置还包括第二载体 保持部分，当从光电转换部分的输出节点观察时，通过第一传送单元并联地与第一载体部分电连接，从而平滑电影成像而不引起不连续帧，同时抑制噪声混合到电荷载体保持部分的产生 。

    Manufacturing method for a solid-state image sensor
    9.
    发明授权
    Manufacturing method for a solid-state image sensor 有权
    固态图像传感器的制造方法

    公开(公告)号：US08501520B2

    公开(公告)日：2013-08-06

    申请号：US12697420

    申请日：2010-02-01

    申请人： Katsunori Hirota ,  Akira Ohtani ,  Kazuaki Tashiro ,  Yusuke Onuki ,  Takanori Watanabe ,  Takeshi Ichikawa

    发明人： Katsunori Hirota ,  Akira Ohtani ,  Kazuaki Tashiro ,  Yusuke Onuki ,  Takanori Watanabe ,  Takeshi Ichikawa

    IPC分类号： H01L51/40

    CPC分类号： H01L27/14689 ,  H01L21/26513 ,  H01L21/324 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14698

    摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.

    摘要翻译： 一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。

    IMAGE SENSING DEVICE AND CAMERA
    10.
    发明申请
    IMAGE SENSING DEVICE AND CAMERA 有权
    图像传感装置和摄像机

    公开(公告)号：US20110242388A1

    公开(公告)日：2011-10-06

    申请号：US13139558

    申请日：2010-01-20

    申请人： Takanori Watanabe ,  Mineo Shimotsusa ,  Takeshi Ichikawa ,  Hajime Ikeda ,  Yasuhiro Sekine ,  Akira Ohtani ,  Takeshi Kojima

    发明人： Takanori Watanabe ,  Mineo Shimotsusa ,  Takeshi Ichikawa ,  Hajime Ikeda ,  Yasuhiro Sekine ,  Akira Ohtani ,  Takeshi Kojima

    IPC分类号： H04N5/335 ,  H01L27/146

    CPC分类号： H01L27/1463 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14689 ,  H01L29/7833

    摘要： An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.

    摘要翻译： 图像感测装置包括像素阵列，外围电路，列选择电路和读出器，其中每个像素包括光电二极管，浮动扩散，到浮动扩散的转移PMOS晶体管，放大器PMOS晶体管和 复位PMOS晶体管，放大器PMOS晶体管具有由n型导电图案形成的栅极，并且被第一元件隔离区域和覆盖至少第一元件隔离的下部的n型杂质区隔离 区域，并且列选择电路中包括的每个PMOS晶体管具有由p型导电图案形成并由第二元件隔离区域隔离的栅极，并且与下部分相邻的区域中的n型杂质浓度 的第二元件隔离区域低于n型杂质区域。