Solid-state image pickup device
    1.
    发明授权
    Solid-state image pickup device 失效
    固态图像拾取装置

    公开(公告)号:US4354104A

    公开(公告)日:1982-10-12

    申请号:US147276

    申请日:1980-05-06

    IPC分类号: H01L27/146 H01J40/14

    摘要: In a solid-state image pickup device of the type in which a photoconductive substance is formed as a photosensor on a scanning device consisting of charge-transfer elements or MOS matrix elements, light shielding means are provided in order to optically shield the boundaries or spacing between first electrodes each of which represents a picture element and which electrically couples between the scanning device and the photosensor, whereby a high resolution can be obtained and concurrently effects of blooming can be remarkably improved.

    摘要翻译: 在其中在由电荷转移元件或MOS矩阵元件组成的扫描装置上形成光电导物质作为光电传感器的类型的固态图像拾取装置中,提供遮光装置以光学屏蔽边界或间隔 在每个它们表示像素并且在扫描装置和光电传感器之间电耦合的第一电极之间,由此可以获得高分辨率,同时可以显着提高起霜的影响。

    Solid-state image sensor
    2.
    发明授权
    Solid-state image sensor 失效
    固态图像传感器

    公开(公告)号:US4236829A

    公开(公告)日:1980-12-02

    申请号:US6129

    申请日:1979-01-24

    CPC分类号: H01L27/14665

    摘要: A solid-state image sensor is provided, which has a high spectral response over the whole visible light range and wherein a photoconductor layer having a hetero-junction defined by a hole blocking layer and a layer consisting of a system (Zn.sub.1-x Cd.sub.x Te).sub.1-y (In.sub.2 Te.sub.3).sub.y is formed over a semiconductor substrate which has charge transfer type unit cells or X-Y switching matrix type unit cells.

    摘要翻译: 提供固态图像传感器,其在整个可见光范围内具有高光谱响应,并且其中具有由空穴阻挡层和由系统(Zn1-xCdxTe)1组成的层)限定的异质结的感光体层 -y(In2Te3)y形成在具有电荷转移型单元电池或XY开关矩阵型单元电池的半导体衬底上。

    Solid-state image pickup device
    3.
    发明授权
    Solid-state image pickup device 失效
    固态图像拾取装置

    公开(公告)号:US4271420A

    公开(公告)日:1981-06-02

    申请号:US119187

    申请日:1980-02-06

    摘要: In a solid-state image pickup device of the type in which a photosensitive or photoconductive film is formed over a substrate capable of charge-transfer or X-Y address scanning and an electrode is formed over the photosensitive or photoconductive film, a means for applying to the electrode a voltage having an amplitude proportional to the amount of incident light, whereby blooming may be minimized and an automatic aperture control function may be attained. Because the voltage applied to the electrode over the photosensitive or photoconductive film is set so that the sensitivity of the photoconductive film may be decreased when a light image of high intensity falls on the device, blooming may be avoided.

    摘要翻译: 在其中在能够进行电荷转移或XY地址扫描的基板上形成感光或光电导膜并且在感光或感光膜上形成电极的固态图像拾取装置中, 电极具有与入射光量成比例的振幅的电压,从而可以最小化起霜,并且可以实现自动孔径控制功能。 因为施加到感光或感光膜上的电极上的电压被设定为使得当高强度的光图像落在器件上时光电导膜的灵敏度可能降低,因此可以避免起霜。

    Method for manufacturing a target for an image pickup tube
    4.
    发明授权
    Method for manufacturing a target for an image pickup tube 失效
    用于制造图像拾取管的目标的方法

    公开(公告)号:US3985918A

    公开(公告)日:1976-10-12

    申请号:US543550

    申请日:1975-01-23

    IPC分类号: H01J29/45 B05D5/12 B05D3/02

    摘要: A target for an image pickup tube having high sensitivity, low dark current and low amount of lag-image is manufactured by forming a hetero-junction by the evaporation process. A first layer of ZnS.sub.x Se.sub.1.sub.-x or Zn.sub.u Cd.sub.1.sub.-u S (wherein 0 .ltoreq. x .ltoreq. 1 and 0 .ltoreq. u .ltoreq. 1) is deposited on a light transmitting substrate having a coefficient of linear expansion of 56 .times. 10.sup..sup.-7 /.degree.C - 110 .times. 10.sup..sup.-7 /.degree.C and a second layer of (Zn.sub.y Cd.sub.1.sub.-y Te).sub.z (In.sub.2 Te.sub.3).sub.1.sub.-z (wherein 0.1 .ltoreq. y .ltoreq. 0.9 and 0.7 .ltoreq. z .ltoreq. 1) is deposited on the first layer. The substrate is then heat treated in an inert gas atmosphere or under vacuum at a temperature of 350.degree.-650.degree.C, preferably 500.degree.-600.degree.C for a time period of 5-90 minutes, preferably 5-15 minutes. By effecting second heat treatment at a temperature lower than the first heat treatment temperature, preferably at a temperature of 150.degree.-400.degree.C for 20 minutes - 3 hours, the characteristics of the target are further improved.

    摘要翻译: 通过蒸发处理形成异质结,制造具有高灵敏度,低暗电流和低滞后图像的图像拾取管的目标。 ZnSxSe1-x或ZnuCd1-uS的第一层(其中0≤x≤1和0 = z

    Image display apparatus of liquid crystal valve projection type
    5.
    发明授权
    Image display apparatus of liquid crystal valve projection type 失效
    液晶阀投影型图像显示装置

    公开(公告)号:US4389096A

    公开(公告)日:1983-06-21

    申请号:US237471

    申请日:1981-02-23

    摘要: A liquid crystal light valve projection type image display apparatus comprises an electro-optic element and a Schlieren optical system. The electro-optic element has a liquid crystal layer having a dielectric and optical anisotropy. An electric field having a spatial intensity distribution according to an image signal is applied to said liquid crystal at a spatial period, so that a spatially phase-modulated phase diffraction grating is formed in the liquid crystal layer. Thus, a projected image in enlarged form is obtained. The fact that the electric field with a spatial period is applied to the liquid crystal leads to a constant light diffraction angle, and the modulation of the diffraction light intensity in the applied electric field enables an image corresponding to the input image signal to be projected at high light utilization.

    摘要翻译: 液晶光阀投影型图像显示装置包括电光元件和施利伦光学系统。 电光元件具有电介质和光学各向异性的液晶层。 具有根据图像信号的空间强度分布的电场以空间周期施加到所述液晶,使得在液晶层中形成空间相位调制的相位衍射光栅。 因此,获得放大的投影图像。 将具有空间周期的电场施加到液晶的事实导致恒定的光衍射角,并且所施加的电场中的衍射光强度的调制使得能够将对应于输入图像信号的图像投影在 光利用率高。

    Electro-optical display
    8.
    发明授权
    Electro-optical display 失效
    电光显示

    公开(公告)号:US3960750A

    公开(公告)日:1976-06-01

    申请号:US460876

    申请日:1974-04-15

    CPC分类号: C09K19/60

    摘要: A nematic liquid crystal with positive dielectric anisotropy and a nematic liquid crystal with negative dielectric anisotropy are mixed such that the mixture is given a positive dielectric anisotropy and whenever any kind of pleochroic dye is dissolved therein, can effectively utilize its absorption anisotropy for display performances. A clear color-to-color contrast display is provided by employing the mixed liquid crystal added with pluralkinds of dyes of which at least one is a pleochroic dye and at least two are different in hue and in preformance characteristics of display device.

    摘要翻译: 将具有正介电各向异性的向列型液晶和具有负介电各向异性的向列型液晶混合,使得该混合物具有正的介电各向异性,并且每当任何种类的多色染料溶解时,可以有效地利用其吸收各向异性进行显示性能。 通过使用添加有多种染料的混合液晶,其中至少一种是多色染料,并且至少两种染料的色相和显影装置的预成型特性不同,提供了清晰的颜色对色对比度显示。

    Semiconductor device and method of manufacturing the same
    9.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号:US4329699A

    公开(公告)日:1982-05-11

    申请号:US132406

    申请日:1980-03-21

    摘要: A semiconductor device utilizing amorphous Si.sub.1-x C.sub.x (0.ltoreq..times..ltoreq.1) containing hydrogen. Through a high frequency glow discharge process or a high frequency sputtering process, the composition x is varied to form a heterojunction between amorphous Si.sub.1-x C.sub.x layers, and electrodes are mounted to the layers to complete the device. The amorphous material is desirably selected to have a forbidden band width of 1.7 to 3.2 eV so that the sensitivity of the device can cover the visible range. Because of the amorphous layers, freedom of type and shape of the substrate of the device is large. The dark resistance of the layers is large to improve the photoconductive characteristics of the semiconductor device.

    摘要翻译: 利用含有氢的非晶Si1-xCx(0≤x≤1)的半导体器件。 通过高频辉光放电工艺或高频溅射工艺,组合物x被改变以形成非晶Si1-xCx层之间的异质结,并且电极被安装到层以完成该器件。 期望选择非晶材料以具有1.7至3.2eV的禁带宽度,使得器件的灵敏度可以覆盖可见光范围。 由于非晶层,器件的衬底的类型和形状的自由度大。 层的暗电阻大,以改善半导体器件的光电导特性。