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    Stereo Separation Adjustment Circuit And Mos Integrated Circuit Thereof
    1.
    发明申请
    Stereo Separation Adjustment Circuit And Mos Integrated Circuit Thereof 审中-公开
    立体声分离调整电路及其Mos集成电路

    公开(公告)号：US20080030271A1

    公开(公告)日：2008-02-07

    申请号：US11630842

    申请日：2005-06-08

    申请人： Takashi Aoyama ,  Hiroshi Miyagi

    发明人： Takashi Aoyama ,  Hiroshi Miyagi

    IPC分类号： H03F3/45

    CPC分类号： H04B1/1646 ,  H04H40/63

    摘要： A stereophonic separation can be adjusted without narrowing the dynamic range. Between the sources of a MOS transistor (Q5), to which a composite signal is inputted, and a MOS transistor (Q6), to which a reference voltage is inputted, there are connected in parallel the series connections of resistors and switch elements (R1) and (SW1), (R2) and (SW2), (R3) and (SW3), and so on. The separation level can be so adjusted in DC operations that the resistors (R1 to R5) may exert no influence on the output voltage of the MOS transistor (Q5), and in AC operations that the values of the parallel resistors (R1 to R5) may be varied.

    摘要翻译： 可以调节立体声分离而不使动态范围变窄。 在输入了复合信号的MOS晶体管（Q5）的源极和输入了参考电压的MOS晶体管（Q 6）之间并联连接有电阻器和开关元件的串联连接 （R 1）和（SW 1），（R 2）和（SW 2），（R 3）和（SW 3）等。 电阻（R 1〜R 5）对MOS晶体管（Q 5）的输出电压不产生影响的DC动作中的分离电平可以调整，在并联电阻（R 1〜R 5）可以变化。

    Digital vco and pll circuit using the digital vco
    2.
    发明申请
    Digital vco and pll circuit using the digital vco 审中-公开
    数字vco和pll电路使用数字vco

    公开(公告)号：US20060034409A1

    公开(公告)日：2006-02-16

    申请号：US10523209

    申请日：2003-07-25

    申请人： Takashi Aoyama ,  Hiroshi Miyagi

    发明人： Takashi Aoyama ,  Hiroshi Miyagi

    IPC分类号： H03D3/24

    CPC分类号： H03L7/0992 ,  H03L7/18

    摘要： A digital VCO includes an A/D converter (11) for converting a given analog signal to a digital signal, a quartz oscillation circuit (12) having a quartz oscillator for generating a signal having a predetermined frequency, and a variable divider circuit (13) for varying the division ratio according to the digital signal and divides the frequency of the signal generated by the quartz oscillation circuit (12) according to the division ratio.

    摘要翻译： 数字VCO包括用于将给定模拟信号转换为数字信号的A / D转换器（11），具有用于产生具有预定频率的信号的石英振荡器的石英振荡电路（12）和可变分频电路（13） ），用于根据数字信号改变分频比，并根据分频比对由石英振荡电路（12）产生的信号的频率进行分频。

    Power Supply Method for Circuit Block of Radio-Use Semiconductor Apparatus and Radio-Use Semiconductor Apparatus
    3.
    发明申请
    Power Supply Method for Circuit Block of Radio-Use Semiconductor Apparatus and Radio-Use Semiconductor Apparatus 审中-公开
    无线电使用半导体装置和无线电用途半导体装置的电路块的电源方法

    公开(公告)号：US20080106153A1

    公开(公告)日：2008-05-08

    申请号：US11791576

    申请日：2005-09-29

    申请人： Takashi Aoyama ,  Hiroshi Miyagi

    发明人： Takashi Aoyama ,  Hiroshi Miyagi

    IPC分类号： H01B7/30 ,  H01L27/04

    CPC分类号： H03K3/00 ,  H03K17/00

    摘要： The purpose of the present invention is to reduce the noise of an analog circuit of a radio-use semiconductor apparatus. A power supply voltage is supplied to a low-noise amplifier 12 and a partial circuit of a stereo demodulation circuit 16 from an analog-use power supply. A power supply voltage is supplied to a digital circuit 19, an MPXPLL 17, and pilot signal detection circuit 18 of the stereo demodulation circuit 16 from a digital-use power supply that is separate from the analog-use power supply. This configuration prevents noise generated in a digital circuit from propagating to the analog circuit within the stereo demodulation circuit.

    摘要翻译： 本发明的目的是减少无线电用半导体装置的模拟电路的噪声。 电源电压从模拟用电源提供给低噪声放大器12和立体声解调电路16的局部电路。 电源电压从与模拟用电源分开的数字用电源提供给立体声解调电路16的数字电路19，MPXPLL 17和导频信号检测电路18。 这种配置可防止数字电路中产生的噪声传播到立体声解调电路内的模拟电路。

    Image rejection curcuit
    4.
    发明申请
    Image rejection curcuit 审中-公开
    影像抑制电路

    公开(公告)号：US20070178872A1

    公开(公告)日：2007-08-02

    申请号：US11597960

    申请日：2005-05-25

    申请人： Takashi Aoyama ,  Hiroshi Miyagi

    发明人： Takashi Aoyama ,  Hiroshi Miyagi

    IPC分类号： H04B1/26

    CPC分类号： H04B1/28 ,  H03D7/14

    摘要： In order to provide an image rejection circuit that can reject an image signal without being affected by manufacturing variations in circuit elements such as resistors, condensers, or the like, an image rejection circuit is provided which comprises a first mixer unit 2 for mixing a signal received by a receiver device with a first local oscillation signal generated by a local oscillator 1, a second mixer unit 3 for mixing the received signal with a second local oscillation signal obtained by shifting the local oscillation signal generated by the local oscillator 1 by 90°, a polyphase filter circuit 4 including condensers C1 and switched capacitors, and a composition/output unit 5 for composing and outputting the IF signals output from the polyphase filter circuit 4.

    摘要翻译： 为了提供可以抑制图像信号的图像抑制电路，而不受诸如电阻器，电容器等的电路元件的制造变化的影响，提供了一种图像抑制电路，其包括用于混合信号的第一混频器单元2 由具有由本地振荡器1产生的第一本地振荡信号的接收机设备接收的第二混频器单元3，用于将接收信号与通过将本地振荡器1产生的本地振荡信号移位90°获得的第二本机振荡信号混合; ，包括电容器C 1和开关电容器的多相滤波器电路4，以及用于组合和输出从多相滤波器电路4输出的IF信号的合成/输出单元5。

    Semiconductor device and a method of manufacturing the same
    6.
    发明授权
    Semiconductor device and a method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07348245B2

    公开(公告)日：2008-03-25

    申请号：US11443257

    申请日：2006-05-31

    申请人： Masaaki Shinohara ,  Kozo Watanabe ,  Fukuo Owada ,  Takashi Aoyama

    发明人： Masaaki Shinohara ,  Kozo Watanabe ,  Fukuo Owada ,  Takashi Aoyama

    IPC分类号： H01L21/8234

    CPC分类号： H01L27/11568 ,  G11C11/005 ,  G11C16/0466 ,  H01L27/105 ,  H01L27/11573 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

    摘要： Manufacturing method of a semiconductor device for forming a rewritable nonvolatile memory cell including a first field effect transistor for memory, a circuit including a second field effect transistor and a circuit including a third field effect transistor, including forming a gate insulating film over a semiconductor substrate, a gate electrode over the gate insulating film and sidewall spacers over the sidewalls of the gate electrode associated with each of the first through third field effect transistors. The sidewall spacers of at least the first field effect transistor have a different width than that of at least the second field effect transistor, the gate electrode of the third field effect transistor has a different length than that of at least the first field effect transistor for memory and the gate insulating film of the third field effect transistor has a thickness larger than that of the second field effect transistor.

    摘要翻译： 一种半导体器件的制造方法，用于形成包括用于存储器的第一场效应晶体管的可重写非易失性存储单元，包括第二场效应晶体管的电路和包括第三场效应晶体管的电路，包括在半导体衬底上形成栅极绝缘膜 栅极绝缘膜上的栅电极和与第一至第三场效应晶体管中的每一个相关联的栅电极的侧壁上的侧壁隔离物。 至少第一场效应晶体管的侧壁间隔物具有与至少第二场效应晶体管不同的宽度，第三场效应晶体管的栅电极具有与至少第一场效应晶体管不同的长度， 存储器和第三场效应晶体管的栅极绝缘膜的厚度大于第二场效应晶体管的厚度。

    Semiconductor device and a method of manufacturing the same
    7.
    发明申请
    Semiconductor device and a method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20060214256A1

    公开(公告)日：2006-09-28

    申请号：US11443252

    申请日：2006-05-31

    申请人： Masaaki Shinohara ,  Kozo Watanabe ,  Fukuo Owada ,  Takashi Aoyama

    发明人： Masaaki Shinohara ,  Kozo Watanabe ,  Fukuo Owada ,  Takashi Aoyama

    IPC分类号： H01L29/00

    CPC分类号： H01L27/11568 ,  H01L27/115

    摘要： A semiconductor device having a rewritable nonvolatile memory cell including a first field effect transistor for memory, a circuit including a second field effect transistor and a circuit including a third field effect transistor, the transistors each including a gate insulating film formed over a semiconductor substrate, a gate electrode over the gate insulating film and sidewall spacers over the sidewalls of the corresponding gate electrode. Sidewall spacers of the first field effect transistor are different from those of at least the second field effect transistors. Also, the gate insulating film of the third field effect transistor has a thickness larger than that of the second field effect transistor and the gate electrode of the third field effect transistor has a length different from that of either the first field effect transistor or second field effect transistor. The sidewall spacers of the first field effect transistor include a first silicon oxide film, a first silicon nitride film over the first silicon oxide film and a second silicon oxide film over the first silicon nitride film.

    摘要翻译： 一种半导体器件，具有可重写非易失性存储单元，其包括用于存储的第一场效应晶体管，包括第二场效应晶体管的电路和包括第三场效应晶体管的电路，所述晶体管包括形成在半导体衬底上的栅极绝缘膜， 在栅极绝缘膜上方的栅电极和相应栅电极的侧壁上的侧壁间隔物。 第一场效应晶体管的侧壁间隔物与至少第二场效应晶体管的侧壁间隔物不同。 此外，第三场效应晶体管的栅极绝缘膜的厚度大于第二场效应晶体管的栅极绝缘膜，第三场效应晶体管的栅电极的长度与第一场效应晶体管或第二场效应晶体管的长度不同 效应晶体管。 第一场效应晶体管的侧壁间隔物包括第一氧化硅膜，第一氧化硅膜上的第一氮化硅膜和位于第一氮化硅膜上的第二氧化硅膜。