利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

22 条记录 (耗时 0.033 秒)

    III-NITRIDE SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING III-NITRIDE SEMICONDUCTOR LASER DEVICE
    1.
    发明申请
    III-NITRIDE SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING III-NITRIDE SEMICONDUCTOR LASER DEVICE 有权
    III型氮化物半导体激光器件及其制备III-NITRIDE半导体激光器件的方法

    公开(公告)号：US20120269220A1

    公开(公告)日：2012-10-25

    申请号：US13354053

    申请日：2012-01-19

    申请人： Takashi KYONO ,  Shimpei TAKAGI ,  Takamichi SUMITOMO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Masaki UENO ,  Katsunori YANASHIMA

    发明人： Takashi KYONO ,  Shimpei TAKAGI ,  Takamichi SUMITOMO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Masaki UENO ,  Katsunori YANASHIMA

    IPC分类号： H01S5/323 ,  H01L33/02

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/3202

    摘要： A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the laser device. The c-axis of the nitride semiconductor is inclined at an angle ALPHA relative to a normal axis to the semipolar surface toward the waveguide axis direction. The laser structure includes first and second fractured faces intersecting with the waveguide axis. A laser cavity of the laser device includes the first and second fractured faces extending from edges of first and second faces. The first fractured face includes a step provided at an end face of an InGaN layer of the semiconductor region and extending in a direction from one side face to the other of the laser device.

    摘要翻译： III族氮化物半导体激光器件包括激光器结构，其包括具有六方晶III族氮化物半导体的半极性主表面的支撑衬底和其上的半导体区域，以及设置在半导体区域上的电极，沿着 波导轴在激光装置中。 氮化物半导体的c轴相对于朝向波导轴方向的半极性表面的法线轴线以一角度ALPHA倾斜。 激光器结构包括与波导轴相交的第一和第二断裂面。 激光装置的激光腔包括从第一和第二面的边缘延伸的第一和第二断裂面。 第一断裂面包括设置在半导体区域的InGaN层的端面并沿从激光器件的一个侧面到另一个的方向延伸的台阶。

    GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
    2.
    发明申请
    GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    III类氮化物半导体发光器件

    公开(公告)号：US20130051417A1

    公开(公告)日：2013-02-28

    申请号：US13453743

    申请日：2012-04-23

    申请人： Takamichi SUMITOMO ,  Takashi KYONO ,  Masaki UENO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Masahiro ADACHI ,  Shimpei TAKAGI ,  Katsunori YANASHIMA

    发明人： Takamichi SUMITOMO ,  Takashi KYONO ,  Masaki UENO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Masahiro ADACHI ,  Shimpei TAKAGI ,  Katsunori YANASHIMA

    IPC分类号： H01S5/30

    CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333

    摘要： A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.

    摘要翻译： III族氮化物半导体激光器件包括激光器结构，绝缘层，电极和电介质多层。 激光器结构包括在六方晶III族氮化物半导体支撑基体的半极性主表面上的半导体区域。 电介质多层在激光腔的第一和第二端面上。 III族氮化物的c轴从第一端面到第二端面在波导轴线方向上从主面的法线倾斜角度ALPHA。 焊盘电极具有分别设置在半导体区域的第一至第三区域上的第一至第三部分。 欧姆电极通过绝缘层的开口与第三区域接触。 第一部分具有延伸到第一端面边缘的第一臂。 第三部分远离第一端面边缘。

    GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND EPITAXIAL SUBSTRATE
    5.
    发明申请
    GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND EPITAXIAL SUBSTRATE 审中-公开
    III族氮化物半导体激光器件，制备III族氮化物半导体激光器器件的方法和外延衬底

    公开(公告)号：US20110158277A1

    公开(公告)日：2011-06-30

    申请号：US12837847

    申请日：2010-07-16

    申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Nobuhiro SAGA ,  Masahiro ADACHI ,  Kazuhide SUMIYOSHI ,  Shinji TOKUYAMA ,  Shimpei TAKAGI ,  Takatoshi IKEGAMI ,  Masaki UENO ,  Koji KATAYAMA

    发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Nobuhiro SAGA ,  Masahiro ADACHI ,  Kazuhide SUMIYOSHI ,  Shinji TOKUYAMA ,  Shimpei TAKAGI ,  Takatoshi IKEGAMI ,  Masaki UENO ,  Koji KATAYAMA

    IPC分类号： H01S5/343 ,  H01L21/304 ,  H01L33/06

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202

    摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which comprises a hexagonal III-nitride semiconductor and has a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The laser structure includes first and second fractured faces intersecting with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and an axis normal to the semipolar primary surface. A laser cavity of the III-nitride semiconductor laser device includes the first and second fractured faces. An angle ALPHA between the normal axis and the c-axis of the hexagonal III-nitride semiconductor is in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees. The laser structure includes a laser waveguide extending above the semipolar primary surface, and the laser waveguide extends in a direction of a waveguide vector directed from one to another of the first and second fractured faces. A c-axis vector indicating a direction of the c-axis of the hexagonal III-nitride semiconductor includes a projected component parallel to the semipolar primary surface and a vertical component parallel to the normal axis. An angle difference between the waveguide vector and the projected component is in the range of not less than −0.5 degrees and not more than +0.5 degrees.

    摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。 激光器结构包括支撑基底，其包括六边形III族氮化物半导体并且具有半极性主表面，以及设置在半极性主表面上的半导体区域。 电极设置在半导体区域上。 半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。 激光结构包括与由六边形III族氮化物半导体的m轴和垂直于半极性主表面的轴定义的m-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。 六边形III族氮化物半导体的法线和c轴之间的角度ALPHA在不小于45度且不超过80度的范围内或在不小于100度且不超过135度的范围内 度。 激光器结构包括在半极性主表面上方延伸的激光波导，并且激光波导沿着从第一和第二断裂面的一个引导到另一个的波导矢量的方向延伸。 指示六边形III族氮化物半导体的c轴方向的c轴向量包括平行于半极性主表面的投影分量和平行于法线轴的垂直分量。 波导矢量和投射分量之间的角度差在不小于-0.5度且不超过+0.5度的范围内。

    GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE
    7.
    发明申请
    GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 失效
    III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法

    公开(公告)号：US20120027039A1

    公开(公告)日：2012-02-02

    申请号：US13209101

    申请日：2011-08-12

    申请人： Shimpei TAKAGI ,  Yusuke YOSHIZUMI ,  Koji KATAYAMA ,  Masaki UENO ,  Takatoshi IKEGAMI

    发明人： Shimpei TAKAGI ,  Yusuke YOSHIZUMI ,  Koji KATAYAMA ,  Masaki UENO ,  Takatoshi IKEGAMI

    IPC分类号： H01S5/323

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/3202 ,  H01S5/3211

    摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure 13, a first surface 13a is a surface opposite to a second surface 13b and first and second fractured faces 27, 29 extend each from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. A scribed mark SM1 extending from the edge 13c to the edge 13d is made, for example, at one end of the first fractured face 27, and the scribed mark SM1 or the like has a depressed shape extending from the edge 13c to the edge 13d. The fractured faces 27, 29 are not formed by dry etching and thus are different from the conventional cleaved facets such as c-planes, en-planes, or a-planes. It is feasible to use emission of a band transition enabling a low threshold current.

    摘要翻译： 本发明提供一种III族氮化物半导体激光器件，其具有激光腔，能够在支撑基座的半极性表面上具有低阈值电流，六边形III族氮化物的c轴朝向m轴倾斜。 在激光结构13中，第一表面13a是与第二表面13b相对的表面，第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。 从边缘13c延伸到边缘13d的划线标记SM1例如在第一断裂面27的一端形成，划线标记SM1等具有从边缘13c延伸到边缘13d的凹陷形状 。 断裂面27,29不是通过干蚀刻形成的，因此与常规的切割面不同，例如c面，平面或a平面。 使用能够实现低阈值电流的频带转换的发射是可行的。

    GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF ESTIMATING DAMAGE FROM FORMATION OF SCRIBE GROOVE
    8.
    发明申请
    GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF ESTIMATING DAMAGE FROM FORMATION OF SCRIBE GROOVE 有权

    公开(公告)号：US20110164638A1

    公开(公告)日：2011-07-07

    申请号：US12837209

    申请日：2010-07-15

    申请人： Yusuke YOSHIZUMI ,  Shimpei TAKAGI ,  Takatoshi IKEGAMI ,  Masaki UENO ,  Koji KATAYAMA

    发明人： Yusuke YOSHIZUMI ,  Shimpei TAKAGI ,  Takatoshi IKEGAMI ,  Masaki UENO ,  Koji KATAYAMA

    IPC分类号： H01S5/30 ,  H01S5/323 ,  G01N21/00 ,  H01L21/78 ,  H01L21/66

    CPC分类号： H01S5/3202 ,  B82Y20/00 ,  G01N21/62 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/20 ,  H01S5/2009 ,  H01S5/34333

    摘要： In a group-III nitride semiconductor laser device, a laser structure includes a support base comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface, and a semiconductor region provided on the semipolar principal surface of the support base. An electrode is provided on the semiconductor region of the laser structure. An angle between a normal axis to the semipolar principal surface and the c-axis of the hexagonal group-III nitride semiconductor is in a range of not less than 45° and not more than 80° or in a range of not less than 100° and not more than 135°. The laser structure includes a laser stripe extending in a direction of a waveguide axis above the semipolar principal surface of the support base. The laser structure includes first and second surfaces and the first surface is a surface opposite to the second surface. The laser structure includes first and second fractured faces intersecting with an m-n plane defined by the m-axis of the hexagonal group-III nitride semiconductor and the normal axis, a laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface. The waveguide axis extends from one to the other of the first and second fractured faces. The laser structure has first and second recesses provided each at a portion of the edge of the first surface in the first fractured face. The first and second recesses extend from the first surface of the laser structure, and bottom ends of the first and second recesses are located apart from the edge of the second surface of the laser structure. The first recess has an end at the first surface and the second recess has an end at the first surface. A first distance between the laser stripe and the end of the first recess is smaller than a second distance between the laser stripe and the end of the second recess.

    GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE
    9.
    发明申请
    GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 失效
    III族氮化物半导体激光器件，以及制备III族氮化物半导体激光器件的方法

    公开(公告)号：US20110158276A1

    公开(公告)日：2011-06-30

    申请号：US12837269

    申请日：2010-07-15

    申请人： Shimpei TAKAGI ,  Yusuke YOSHIZUMI ,  Koji KATAYAMA ,  Masaki UENO ,  Takatoshi IKEGAMI

    发明人： Shimpei TAKAGI ,  Yusuke YOSHIZUMI ,  Koji KATAYAMA ,  Masaki UENO ,  Takatoshi IKEGAMI

    IPC分类号： H01S5/343 ,  H01L21/304

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/3202 ,  H01S2301/14

    摘要： In a III-nitride semiconductor laser device, a laser structure includes a support base comprised of a hexagonal III-nitride semiconductor and having a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface of the support base. An electrode is provided on the semiconductor region of the laser structure. The c-axis of the hexagonal III-nitride semiconductor of the support base is inclined at an angle ALPHA with respect to a normal axis toward the m-axis of the hexagonal III-nitride semiconductor. The angle ALPHA is in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and the normal axis. A laser cavity of the III-nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces, and the first surface is opposite to the second surface. Each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface. The support base of the laser structure has a recess provided at a portion of the edge of the first surface in the first fractured face. The recess extends from a back surface of the support base, and an end of the recess is apart from the edge of the second surface of the laser structure.

    摘要翻译： 在III族氮化物半导体激光器件中，激光器结构包括由六方晶III族氮化物半导体构成并具有半极性主表面的支撑基底和设置在支撑基底的半极性主表面上的半导体区域。 在激光结构的半导体区域上设置电极。 支撑基体的六边形III族氮化物半导体的c轴相对于正六边形III族氮化物半导体的m轴的法线轴线倾斜一角度ALPHA。 角度ALPHA在不小于45度且不大于80度的范围内或在不小于100度且不超过135度的范围内。 激光结构包括与由六边形III族氮化物半导体的m轴和法线轴限定的m-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。 激光结构包括第一表面和第二表面，并且第一表面与第二表面相对。 第一和第二断裂面中的每一个从第一表面的边缘延伸到第二表面的边缘。 激光结构的支撑基座具有设置在第一断裂面中的第一表面的边缘的一部分处的凹部。 凹部从支撑基座的后表面延伸，并且凹部的端部与激光结构的第二表面的边缘分开。