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52 条记录 (耗时 0.03 秒)

    Optical disk recording and reproducing apparatus for compressed signals
    1.
    发明授权
    Optical disk recording and reproducing apparatus for compressed signals 失效
    用于压缩信号的光盘记录和再现装置

    公开(公告)号：US5687158A

    公开(公告)日：1997-11-11

    申请号：US645037

    申请日：1996-05-15

    申请人： Takashi Kawasaki ,  Nobumasa Suzuki ,  Hideo Ueno ,  Tomomi Matsumura

    发明人： Takashi Kawasaki ,  Nobumasa Suzuki ,  Hideo Ueno ,  Tomomi Matsumura

    IPC分类号： G11B7/00 ,  G11B7/004 ,  G11B20/00 ,  G11B20/10 ,  G11B27/02 ,  G11B27/034

    CPC分类号： G11B20/10527 ,  G11B20/00007

    摘要： An optical disc recording/reproducing apparatus capable of performing the operation of recording, reproducing, or recording and reproducing a plurality channel of signals efficiently and in a short time, by controlling memories. The apparatus has a compressor for compressing an input signal supplied via an A/D converter, a first memory for storing the compressed signal, a disc recording unit having a modulator for modulating the compressed signal and a head block for recording the modulated signal on an optical disc, a disc reproducing unit having a demodulator for demodulating the compressed signal read from the optical disc by the head block, a second memory for storing the demodulated signal, an expander for expanding the demodulated signal read from the second memory, and a D/A converter for converting the read signal.

    摘要翻译： 一种光盘记录/再现装置，其能够通过控制存储器来有效地并且在短时间内执行记录，再现或记录和再现多个信道的操作。 该装置具有用于压缩经由A / D转换器提供的输入信号的压缩器，用于存储压缩信号的第一存储器，具有用于调制压缩信号的调制器的盘记录单元和用于将调制信号记录在一个 光盘，具有用于解调由头块从光盘读取的压缩信号的解调器的光盘再现单元，用于存储解调信号的第二存储器，用于扩展从第二存储器读取的解调信号的扩展器，以及D / A转换器，用于转换读取信号。

    Plasma nitriding method
    5.
    发明申请
    Plasma nitriding method 审中-公开
    等离子氮化方法

    公开(公告)号：US20050196973A1

    公开(公告)日：2005-09-08

    申请号：US11071246

    申请日：2005-03-04

    申请人： Nobumasa Suzuki ,  Hideo Kitagawa

    发明人： Nobumasa Suzuki ,  Hideo Kitagawa

    IPC分类号： H01L21/318 ,  H01L21/4763

    CPC分类号： H01L21/0214 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3115

    摘要： Disclosed is a plasma nitriding method by which an ultra-thin oxide-nitride film having a half-value depth of not greater than 0.8 nm can be produced, overcoming various inconveniences involved in conventional plasma nitriding methods. In one preferred form of the present invention, the plasma nitriding method includes the steps of introducing a substrate to be processed, into a reaction chamber, evacuating the reaction chamber, supplying a gas containing nitrogen atoms, into the reaction chamber at a predetermined flow rate, adjusting an exhaust conductance to maintain a predetermined pressure inside the reaction chamber, and applying an electric voltage into the reaction chamber to produce plasma to thereby cause nitriding of the surface of the substrate, wherein the gas further contains hydrogen atoms, wherein the predetermined pressure is not less than 2 Torr, and wherein a spacing between the substrate and a densest portion of the plasma is not less than 75 nm.

    摘要翻译： 公开了一种等离子体氮化方法，其可以生产半值深度不大于0.8nm的超薄氧化物氮化物膜，以克服常规等离子体氮化方法中涉及的各种不便。 在本发明的一个优选形式中，等离子体氮化方法包括以下步骤：将预处理的基材以预定的流速引入反应室，将反应室抽空，将含有氮原子的气体供给反应室 调节排气电导以维持反应室内的预定压力，并向反应室施加电压以产生等离子体，从而导致衬底表面渗氮，其中气体还含有氢原子，其中预定压力 不小于2Torr，并且其中衬底和等离子体最稠密部分之间的间隔不小于75nm。

    Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method
    6.
    发明授权
    Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method 失效
    具有微波施加器的等离子体处理装置具有环形波导和处理方法

    公开(公告)号：US06497783B1

    公开(公告)日：2002-12-24

    申请号：US09082006

    申请日：1998-05-20

    申请人： Nobumasa Suzuki ,  Manabu Matsuo ,  Hirohisa Oda

    发明人： Nobumasa Suzuki ,  Manabu Matsuo ,  Hirohisa Oda

    IPC分类号： H01L213065

    CPC分类号： H01J37/3244 ,  H01J37/32192 ,  H01J37/32229 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274

    摘要： A plasma processing apparatus is disclosed which comprises a container which can be evacuated; a gas supply means for supplying a gas to the inside of the container; and a microwave supply means for supplying microwaves to generate a plasma in the container, the plasma being utilized to process an article, wherein the microwave supply means is a microwave applicator which is provided with an annular waveguide having a planar H-plane with a plurality of slots provided apart from each other and a rectangular cross section perpendicular to the traveling direction of microwaves and which supplies microwaves to the inside of the container through a dielectric window of the container from the plurality of slots provided in the planar H-plane, and wherein the gas supply means is provided a gas emission port through which the gas is emitted toward the planar H-plane.

    摘要翻译： 公开了一种等离子体处理装置，其包括可被抽空的容器; 用于将气体供给到容器内部的气体供给装置; 以及用于提供微波以在容器中产生等离子体的微波提供装置，用于处理物品的等离子体，其中微波提供装置是微波施加器，其具有带有多个平面H平面的环形波导 相互间隔设置的槽和垂直于微波行进方向的矩形截面，并且通过设置在平面H平面中的多个狭槽通过容器的电介质窗口将微波供应到容器的内部，以及 其中，所述气体供给装置设置有气体排出口，气体朝向所述平面H平面发射。

    Thin film forming apparatus and method of forming thin film of compound by using the same
    7.
    发明授权
    Thin film forming apparatus and method of forming thin film of compound by using the same 有权
    薄膜形成装置及其制作方法

    公开(公告)号：US06238527B1

    公开(公告)日：2001-05-29

    申请号：US09162725

    申请日：1998-09-30

    申请人： Kazuho Sone ,  Nobumasa Suzuki

    发明人： Kazuho Sone ,  Nobumasa Suzuki

    IPC分类号： C23C1434

    CPC分类号： H01J37/32192 ,  C23C14/0047 ,  C23C14/0068 ,  G02B1/10 ,  H01J37/3405

    摘要： A film forming apparatus for forming a minute thin film at a high depositing rate, which comprises a substrate holding means for holding a substrate, a target holding means for holding a target, a gas supply means for supplying a sputtering gas for sputtering the target into a reaction chamber, and an electric power supply means for supplying an electric power for causing an electric discharge between the target and the substrate, wherein a partition member having a plurality of openings provided between the target and the substrate, and wherein means for supplying a reaction gas and a microwave are provided in a space between the partition member and the substrate.

    摘要翻译： 一种用于以高沉积速率形成微小薄膜的成膜装置，其包括用于保持基板的基板保持装置，用于保持靶材的目标保持装置，用于将用于溅射靶材的溅射气体供应到气体供应装置 反应室，以及用于提供用于在靶和基板之间进行放电的电力的电力供给装置，其中，具有设置在靶和基板之间的多个开口的分隔构件，并且其中， 反应气体和微波设置在分隔构件和基板之间的空间中。