公开(公告)号：US06943410B2

公开(公告)日：2005-09-13

申请号：US10170216

申请日：2002-06-12

申请人： Tatsuhiko Fujihira ,  Takashi Kobayashi ,  Hitoshi Abe ,  Yasushi Niimura ,  Masanori Inoue

发明人： Tatsuhiko Fujihira ,  Takashi Kobayashi ,  Hitoshi Abe ,  Yasushi Niimura ,  Masanori Inoue

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L23/58

CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/402 ,  H01L29/4238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A vertical MOS semiconductor device exhibits a high breakdown voltage and low on-resistance, reduces the tradeoff relation between the on-resistance and the breakdown voltage, and realizes high speed switching. The semiconductor device has a breakdown-voltage sustaining layer, such as an n−-type drift layer, and a well region, such as a p-type well region, in the breakdown-voltage sustaining layer. The resistivity ρ (Ωcm) of the breakdown-voltage layer is within a range expressed in terms of the breakdown voltage Vbr (V). The semiconductor device also has stripe shaped surface drain regions that extend from the well region and are surrounded by the well region. The surface area ratio between surface drain regions and the well region, which includes the source region, is from 0.01 to 0.2.

摘要翻译： 垂直MOS半导体器件表现出高的击穿电压和低导通电阻，降低了导通电阻和击穿电压之间的折衷关系，实现了高速切换。 该半导体器件具有击穿电压维持层，例如n + P型漂移层，以及击穿电压维持层中的诸如p型阱区的阱区。 击穿电压层的电阻率rho（Ωgacm）在以击穿电压Vbr（V）表示的范围内。 半导体器件还具有从阱区域延伸并被阱区域包围的条形表面漏极区域。 表面漏区与包含源区的阱区的表面积比为0.01〜0.2。

公开(公告)号：US06894319B2

公开(公告)日：2005-05-17

申请号：US10020573

申请日：2001-10-31

申请人： Takashi Kobayashi ,  Tatsuhiko Fujihira ,  Hitoshi Abe ,  Yasushi Niimura ,  Masanori Inoue

发明人： Takashi Kobayashi ,  Tatsuhiko Fujihira ,  Hitoshi Abe ,  Yasushi Niimura ,  Masanori Inoue

IPC分类号： H01L23/29 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/7802 ,  H01L23/293 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/7395 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： A MOS semiconductor device includes n−-type surface regions, which are extended portions of an n−-type drift layer 12 extended to the surface of the semiconductor chip. Each n−-type surface region 14 is shaped with a stripe surrounded by a p-type well region. The surface area ratio between n−-type surface regions 14 and p-type well region 13 including an n+-type region 15 is from 0.01 to 0.2. The MOS semiconductor device further includes, in the breakdown withstanding region thereof, a plurality of guard rings, the number of which is equal to or more than the number n calculated from the following equation n=(Breakdown voltage Vbr (V))/100, and the spacing between the adjacent guard rings is set at 1 μm or less.

公开(公告)号：US06911692B2

公开(公告)日：2005-06-28

申请号：US10646590

申请日：2003-08-22

申请人： Takashi Kobayashi ,  Tatsuhiko Fujihira ,  Hitoshi Abe ,  Yasushi Niimura ,  Masanori Inoue

发明人： Takashi Kobayashi ,  Tatsuhiko Fujihira ,  Hitoshi Abe ,  Yasushi Niimura ,  Masanori Inoue

IPC分类号： H01L23/29 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7802 ,  H01L23/293 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/7395 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： A MOS semiconductor device includes n−-type surface regions, which are extended portions of an n−-type drift layer 12 extended to the surface of the semiconductor chip. Each n−-type surface region 14 is shaped with a stripe surrounded by a p-type well region. The surface area ratio between n−-type surface regions 14 and p-type well region 13 including an n+-type region 15 is from 0.01 to 0.2. The MOS semiconductor device further includes, in the breakdown withstanding region thereof, a plurality of guard rings, the number of which is equal to or more than the number n calculated from the following equation n=(Breakdown voltage Vbr (V))/100, and the spacing between the adjacent guard rings is set at 1 μm or less.

摘要翻译： 一种MOS半导体器件包括n + O - 型表面区域，其是延伸到半导体芯片的表面的n + O - 型漂移层12的延伸部分。 每一个n型 - 表面区域14成形为由p型阱区域围绕的条纹。 包括n + +型区域15在内的n + - 型表面区域14和p型阱区域13之间的表面积比为0.01〜0.2。 MOS半导体器件在其击穿区域中进一步包括多个保护环，其数量等于或大于根据以下等式计算的数n：n =（击穿电压Vbr（V））/ 100 ，相邻保护环之间的间隔设定为1um以下。

公开(公告)号：US07235841B2

公开(公告)日：2007-06-26

申请号：US10973946

申请日：2004-10-26

申请人： Yasuhiko Onishi ,  Takeyoshi Nishimura ,  Yasushi Niimura ,  Hitoshi Abe

发明人： Yasuhiko Onishi ,  Takeyoshi Nishimura ,  Yasushi Niimura ,  Hitoshi Abe

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L29/00

CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696

摘要： A semiconductor device includes an active region, an alternating conductivity type layer, and an insulation region surrounding the alternating conductivity type layer provided in a periphery section as a voltage withstanding section. The insulation region is made of an insulator with the critical electric field strength higher than that of the semiconductor and reaches an n+-drain layer on the bottom surface side of the device from a surface on the side on which a surface structure section is formed. In the alternating conductivity type layer, the width of the p-type partition region adjacent to the insulation region is made narrower than the width of the p-type partition region not adjacent to the insulation region to ensure a balanced state of charges at the end of the drift section made up of the alternating conductivity type layer. A high breakdown voltage is ensured with the length of the periphery section shortened.

摘要翻译： 半导体器件包括有源区，交变导电类型层和围绕设置在周边部分中的交变导电类型层的绝缘区域作为耐压部分。 绝缘区域由临界电场强度高于半导体的绝缘体制成，并从设备侧面上的表面到达器件底面侧的n + 其形成表面结构部分。 在交变导电型层中，与绝缘区域相邻的p型分隔区域的宽度比不与绝缘区域相邻的p型分隔区域的宽度窄，以确保最终的电荷平衡状态 由交替导电型层构成的漂移部分。 确保周边部分的长度缩短的高击穿电压。

公开(公告)号：US20050145933A1

公开(公告)日：2005-07-07

申请号：US10973946

申请日：2004-10-26

申请人： Yasuhiko Onishi ,  Takeyoshi Nishimura ,  Yasushi Niimura ,  Hitoshi Abe

发明人： Yasuhiko Onishi ,  Takeyoshi Nishimura ,  Yasushi Niimura ,  Hitoshi Abe

IPC分类号： H01L29/06 ,  H01L29/76 ,  H01L29/78

CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696

摘要： A semiconductor device includes an active region, an alternating conductivity type layer, and an insulation region surrounding the alternating conductivity type layer provided in a periphery section as a voltage withstanding section. The insulation region is made of an insulator with the critical electric field strength higher than that of the semiconductor and reaches an n+-drain layer on the bottom surface side of the device from a surface on the side on which a surface structure section is formed. In the alternating conductivity type layer, the width of the p-type partition region adjacent to the insulation region is made narrower than the width of the p-type partition region not adjacent to the insulation region to ensure a balanced state of charges at the end of the drift section made up of the alternating conductivity type layer. A high breakdown voltage is ensured with the length of the periphery section shortened.

摘要翻译： 半导体器件包括有源区，交变导电类型层和围绕设置在周边部分中的交变导电类型层的绝缘区域作为耐压部分。 绝缘区域由临界电场强度高于半导体的绝缘体制成，并从设备侧面上的表面到达器件底面侧的n + 其形成表面结构部分。 在交变导电型层中，与绝缘区域相邻的p型分隔区域的宽度比不与绝缘区域相邻的p型分隔区域的宽度窄，以确保最终的电荷平衡状态 由交替导电型层构成的漂移部分。 确保周边部分的长度缩短的高击穿电压。

公开(公告)号：US09466711B2

公开(公告)日：2016-10-11

申请号：US12865330

申请日：2009-01-28

申请人： Seiji Momota ,  Hitoshi Abe ,  Takashi Shiigi ,  Takeshi Fujii ,  Koh Yoshikawa ,  Tetsutaro Imagawa ,  Masaki Koyama ,  Makoto Asai

发明人： Seiji Momota ,  Hitoshi Abe ,  Takashi Shiigi ,  Takeshi Fujii ,  Koh Yoshikawa ,  Tetsutaro Imagawa ,  Masaki Koyama ,  Makoto Asai

IPC分类号： H01L29/78 ,  H01L29/96 ,  H01L29/739 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423

CPC分类号： H01L27/0629 ,  H01L27/0658 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7815 ,  H01L29/7827

摘要： Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator (36) is larger than a product of the resistor and maximal current flowing through the current detection device (21) with reverse bias. A diffusion length of a p-body region (32) of the main device (24) is shorter than that of a p-body (31) of the current detection device (21). A curvature radius at an end portion of the p-body region (32) of the main device (24) is smaller than that of the p-body (31) of the current detection device (21). As a result, at the inverse bias, electric field at the end portion of the p-body region (32) of the main device (24) becomes stronger than that of the p-body region (31) of the current detection device (21). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device (21).

摘要翻译： 在主装置（24）的源电极（25）和电流检测装置（21）的电流检测电极（22）之间连接用于检测电流的电阻器。 栅极绝缘体（36）的介电耐受电压大于电阻器和流过电流检测装置（21）的反向偏压的最大电流的乘积。 主装置（24）的p体区域（32）的扩散长度短于电流检测装置（21）的p体（31）的扩散长度。 主装置（24）的p体区域（32）的端部的曲率半径比电流检测装置（21）的p体（31）的曲率半径小。 结果，在逆偏压下，主装置（24）的p体区域（32）的端部的电场变得比电流检测装置的p体区域（31）的电场强 21）。 因此，主装置24中的雪崩击穿比电流检测装置（21）更容易发生。

公开(公告)号：US08011344B2

公开(公告)日：2011-09-06

申请号：US12455504

申请日：2009-06-03

申请人： Yoshio Yoshihara ,  Shuhei Maruyama ,  Teruyuki Saitoh ,  Hitoshi Abe

发明人： Yoshio Yoshihara ,  Shuhei Maruyama ,  Teruyuki Saitoh ,  Hitoshi Abe

IPC分类号： F02B77/04 ,  B01D50/00

CPC分类号： A01D34/82 ,  F02M35/02 ,  F02M35/10013 ,  F02M35/1017

摘要： An engine air intake system for an engine-powered working machine includes a lever cover which covers at least a base portion of an operation control lever mounted on an operation handle for operation by a human operator to control operation of at least one of the working machine and an engine of the working machine, a lower cover disposed inside the lever cover so as to define jointly with the lever cover a hollow space, an air intake portion having an air inlet opening and disposed in the lever cover such that at least the air inlet opening is disposed within the hollow space, and a fresh air guide hose interconnecting the air intake portion and the interior of an air-cleaner case.

摘要翻译： 一种用于发动机动力工作机械的发动机进气系统，包括杆盖，该杆盖至少覆盖安装在操作手柄上的操作控制杆的基部，用于由操作者操作以控制至少一个工作机 工作机的发动机，设置在杠杆盖内侧的下盖，以便与杠杆覆盖一个中空空间;空气入口部分，具有进气口，并设置在杠杆盖中，使得至少空气 入口开口设置在中空空间内，以及将进气部分与空气滤清器壳体的内部相互连接的新鲜导气软管。

公开(公告)号：US20110006446A1

公开(公告)日：2011-01-13

申请号：US12922206

申请日：2009-03-19

申请人： Hitoshi Abe ,  Yukio Sugimoto ,  Eiichi Utsugi

发明人： Hitoshi Abe ,  Yukio Sugimoto ,  Eiichi Utsugi

IPC分类号： F02M37/04

CPC分类号： F02M7/08 ,  F02M7/06 ,  F02M15/06 ,  F02M17/34

摘要： Disclosed is an engine fuel supply apparatus which can be made smaller in size and in which the amount of fuel in an air-fuel mixture can be increased with a fast response in correspondence with the operation of a throttle valve when the engine is accelerated rapidly. The fuel supply apparatus is provided with a fuel booster pump. A portion of an air-fuel mixture is introduced into a negative-pressure chamber of the fuel booster pump via a negative-pressure chamber channel, and the fuel booster pump is actuated. The actuation forces air in a pump chamber to flow into a pressure chamber, and fuel in a fuel storage chamber is temporarily supplied to a carburetor.

摘要翻译： 本发明公开了一种发动机燃料供给装置，其能够在发动机快速加速时与制动器的操作相对应地快速响应地增大空气燃料混合物中的燃料量，使其能够增大。 燃料供给装置设置有燃料增压泵。 一部分空气燃料混合物通过负压室通道被引入到燃料增压泵的负压室中，并且燃料增压泵被致动。 致动迫使泵室中的空气流入压力室，并且燃料储存室中的燃料临时供应到化油器。

公开(公告)号：US20060248077A1

公开(公告)日：2006-11-02

申请号：US11403705

申请日：2006-04-13

申请人： Kazunori Horikiri ,  Masatomi Inagaki ,  Yoshiki Watanabe ,  Eriko Tamaru ,  Hitoshi Abe

发明人： Kazunori Horikiri ,  Masatomi Inagaki ,  Yoshiki Watanabe ,  Eriko Tamaru ,  Hitoshi Abe

IPC分类号： G06F17/30

CPC分类号： G06F17/30011 ,  H04N1/2166 ,  H04N1/32122 ,  H04N2201/3204

摘要： There is provided a scanned-document management system including a first user identification information reading unit that acquires identification information of a user who operates a document reading unit; an attribute information generating unit that acquires information of a user identified by the user identification information acquired by the first user identification information reading unit and generates attribute information based on the acquired information of the user; a document registration unit that registers the document data and the attribute data in a document management unit; a second user identification information reading unit that acquires identification information of a user who operates a document display unit; a request information generating unit that acquires information of a user identified by the user identification information acquired by the second user identification information reading unit and generates document acquisition request information; a corresponding document selection unit that selects document data related to the user based on document acquisition request information and the attribute information; and a display control unit that displays the selected document data.

摘要翻译： 提供了一种扫描文件管理系统，其包括：第一用户识别信息读取单元，其获取操作文档读取单元的用户的识别信息; 属性信息生成单元，其获取由所述第一用户识别信息读取单元获取的所述用户识别信息识别的用户的信息，并且基于所获取的所述用户的信息生成属性信息; 文档注册单元，其将文档数据和属性数据登记在文档管理单元中; 第二用户识别信息读取单元，其获取操作文档显示单元的用户的识别信息; 请求信息生成单元，其获取由所述第二用户识别信息读取单元获取的所述用户识别信息识别的用户的信息，并生成文档获取请求信息; 对应文档选择单元，其基于文档获取请求信息和属性信息来选择与用户相关的文档数据; 以及显示控制单元，其显示所选择的文档数据。

公开(公告)号：US20060024194A1

公开(公告)日：2006-02-02

申请号：US11237918

申请日：2005-09-29

申请人： Koichi Izumida ,  Yuki Takano ,  Hitoshi Abe ,  Toshiyuki Moribayashi ,  Koichi Hagio ,  Junichi Takenaka

发明人： Koichi Izumida ,  Yuki Takano ,  Hitoshi Abe ,  Toshiyuki Moribayashi ,  Koichi Hagio ,  Junichi Takenaka

IPC分类号： C22C13/00 ,  B32B15/01

CPC分类号： B23K35/0266 ,  B23K35/262 ,  B23K2101/38 ,  B23K2103/12 ,  C22C13/00 ,  H01F27/29 ,  H01F41/10 ,  Y10T428/12715

摘要： Wire burst faults at the time of solder attachment of conductors of an electronic component using insulation coated conductors having a core of copper or alloy containing alloy, is prevented. Solder attachment of connecting portions of insulation coated conductors having copper as a base material is carried out by melting lead-free solder alloy containing from 5.3 to 7.0 wt % copper (Cu), from 0.1 to less than 0.5 wt % nickel (Ni), with a remainder being tin (Sn), at a temperature ranging from 400° C. to 480° C.

摘要翻译： 防止使用具有铜或合金含有合金的芯的绝缘涂层导体的电子部件的导体焊接附着时的断线故障。 以铜为基体的绝缘涂层导体的连接部分的焊接是通过熔化含有5.3至7.0重量％铜（Cu）的无铅焊料合金，从0.1至小于0.5重量％的镍（Ni）， 余量为锡（Sn），温度范围为400〜480℃。