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    POLISHING PAD
    8.
    发明申请
    POLISHING PAD 有权
    抛光垫

    公开(公告)号：US20090253353A1

    公开(公告)日：2009-10-08

    申请号：US11720964

    申请日：2005-12-08

    申请人： Kazuyuki Ogawa ,  Tetsuo Shimomura ,  Atsushi Kazuno ,  Yoshiyuki Nakai ,  Masahiro Watanabe ,  Takatoshi Yamada ,  Masahiko Nakamori

    发明人： Kazuyuki Ogawa ,  Tetsuo Shimomura ,  Atsushi Kazuno ,  Yoshiyuki Nakai ,  Masahiro Watanabe ,  Takatoshi Yamada ,  Masahiko Nakamori

    IPC分类号： B24B37/04 ,  B24B1/00 ,  B29C65/70 ,  B32B37/00 ,  B32B3/10

    CPC分类号： B24B37/205 ,  Y10T428/24339 ,  Y10T428/24992

    摘要： It is an object of the invention to provide a polishing pad capable of high precision optical detection of an endpoint during polishing in progress and prevention of slurry leakage from between a polishing region and a light-transmitting region during the use thereof even after the polishing pad has been used for a long period. It is a second object of the invention to provide a polishing pad capable of suppression of deterioration of polishing characteristics (such as in-plane uniformity) and generation of scratches due to a difference in behavior of a polishing region and a light-transmitting region during polishing. It is a third object of the invention to provide a polishing pad having a polishing region and a light-transmitting region with a concentration of a specific metal equal to or lower than a specific value (threshold value).

    摘要翻译： 本发明的目的是提供一种抛光垫，其能够在抛光过程中对端点进行高精度光学检测，并且即使在抛光垫之后也可防止在使用期间抛光区域和透光区域之间的浆料泄漏 已被使用了很长时间。 本发明的第二个目的是提供一种能够抑制抛光特性（例如面内均匀性）劣化的抛光垫以及由于抛光区域和透光区域的行为差异而产生的划痕 抛光。 本发明的第三个目的是提供一种具有抛光区域和特定金属浓度等于或低于特定值（阈值）的透光区域的抛光垫。

    Polishing pad and semiconductor device manufacturing method
    9.
    发明授权
    Polishing pad and semiconductor device manufacturing method 有权
    抛光垫和半导体器件的制造方法

    公开(公告)号：US07731568B2

    公开(公告)日：2010-06-08

    申请号：US10598717

    申请日：2004-10-20

    申请人： Tetsuo Shimomura ,  Masahiko Nakamori ,  Takatoshi Yamada ,  Kazuyuki Ogawa ,  Atsushi Kazuno ,  Masahiro Watanabe

    发明人： Tetsuo Shimomura ,  Masahiko Nakamori ,  Takatoshi Yamada ,  Kazuyuki Ogawa ,  Atsushi Kazuno ,  Masahiro Watanabe

    IPC分类号： B24B7/00 ,  B24B7/19 ,  B24B5/00 ,  B24B29/00 ,  B24D11/00

    CPC分类号： B24B37/205 ,  H01L21/30625

    摘要： The object of the invention is to provide a polishing pad capable of maintaining high-precision end-point optical detection over a long period from the start of use to the end of use even if polishing is performed with an alkaline or acid slurry, as well as a method of manufacturing a semiconductor device with this polishing pad. The polishing pad of the invention is used in chemical mechanical polishing and has a polishing region and a light-transmitting region, wherein the light-transmitting region satisfies that the difference ΔT (ΔT=T0−T1) (%) between T0 and T1 is within 10(%) over the whole range of measurement wavelengths of from 400 to 700 nm, wherein T1 is the light transmittance (%) of the light-transmitting region measured at the measurement wavelength λ after dipping for 24 hours in a KOH aqueous solution at pH 11 or an H2O2 aqueous solution at pH 4 and T0 is the light-transmittance (%) measured at the measurement wavelength λ before the dipping.

    摘要翻译： 本发明的目的是提供一种抛光垫，即使在用碱性或酸性浆料进行研磨的同时，也能够在从使用开始到使用结束的长时间内保持高精度的端点光学检测 作为使用该研磨垫的半导体装置的制造方法。 本发明的抛光垫用于化学机械抛光，并具有抛光区域和透光区域，其中透光区域满足以下区别：Dgr; T（＆Dgr; T = T0-T1）（％） T0和T1在400〜700nm的测量波长的整个范围内在10（％）以内，其中T1是在浸渍24小时后在测量波长λ测量的透光区域的透光率（％） pH为11的KOH水溶液或pH4的H 2 O 2水溶液，T0为在浸渍前测定的波长λ下测定的透光率（％）。