公开(公告)号：US06617691B2

公开(公告)日：2003-09-09

申请号：US10252534

申请日：2002-09-24

申请人： Takashi Nakajima ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shinji Nishihara ,  Masashi Sahara ,  Kentaro Yamada ,  Masayuki Suzuki

发明人： Takashi Nakajima ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shinji Nishihara ,  Masashi Sahara ,  Kentaro Yamada ,  Masayuki Suzuki

IPC分类号： H01L2348

CPC分类号： H01L23/485 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

摘要： The object of the invention is to provide such a highly reliable semiconductor device as no defect such as the breakage of a tungsten conductor occurs. This object is achieved by the following means, i.e., a molybdenum film, a tungsten film and another molybdenum film are deposited in this order on an interlayer dielectric film formed on a silicon substrate.

公开(公告)号：US06472754B2

公开(公告)日：2002-10-29

申请号：US09822489

申请日：2001-04-02

申请人： Takashi Nakajima ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shinji Nishihara ,  Masashi Sahara ,  Kentaro Yamada ,  Masayuki Suzuki

发明人： Takashi Nakajima ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shinji Nishihara ,  Masashi Sahara ,  Kentaro Yamada ,  Masayuki Suzuki

IPC分类号： H01L2348

CPC分类号： H01L23/485 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

摘要： The object of the invention is to provide such a highly reliable semiconductor device as no defect such as the breakage of a tungsten conductor occurs. This object is achieved by the following means, i.e., a molybdenum film, a tungsten film and another molybdenum film are deposited in this order on an interlayer dielectric film formed on a silicon substrate.

摘要翻译： 本发明的目的是提供这样一种高度可靠的半导体器件，不会出现诸如钨导体断裂的缺陷。 该目的通过以下方式实现，即，将钼膜，钨膜和另一种钼膜依次沉积在形成在硅衬底上的层间电介质膜上。

公开(公告)号：US06476492B2

公开(公告)日：2002-11-05

申请号：US09758288

申请日：2001-01-12

申请人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

发明人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

IPC分类号： H01L2348

CPC分类号： H01L23/53257 ,  H01L27/10814 ,  H01L27/10894 ,  H01L28/55 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device, which comprises a capacitor component comprising a first electrode, an oxide film with a high dielectric constant or ferroelectricity in contact with the first electrode and a second electrode in contact with the oxide film, as formed in this order, on one principal side of a silicon substrate with a metal wiring layer formed thereon, such problems as breaking of tungsten interconnect, lowering of reliability, lowering of yield, etc. of semi-conductor devices can be solved by using molybdenum-containing tungsten as the material of metal interconnect layer.

摘要翻译： 在包括第一电极的电容器组件，具有高介电常数或与第一电极接触的铁电性的氧化膜和与该氧化物膜接触的第二电极的电容器组件中， 在其上形成有金属布线层的硅衬底的主面上，通过使用含钼钨作为材料，可以解决半导体器件的钨互连断裂，可靠性降低，成品率降低等问题 金属互连层。

公开(公告)号：US06856021B1

公开(公告)日：2005-02-15

申请号：US09648455

申请日：2000-08-28

申请人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

发明人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

CPC分类号： H01L21/76844 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/7685 ,  H01L23/53219 ,  H01L23/53223 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is provided which includes a semiconductor substrate, metal conductors formed on a side of a main face of the substrate, which metal conductors contain aluminum as a main constituent thereof, and copper as an additive element, the metal conductors being made to contain such an element as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper.

摘要翻译： 提供了一种半导体器件，其包括半导体衬底，形成在衬底的主面一侧的金属导体，该金属导体以铝为主要成分，铜作为添加元素，金属导体被制成含有 抑制铜的析出或使金属导体附近具有这样的膜的元素，以抑制铜的沉淀，或者使该膜与金属导体相邻，以抑制铜的析出 。

公开(公告)号：US07064437B2

公开(公告)日：2006-06-20

申请号：US10184932

申请日：2002-07-01

申请人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

发明人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

IPC分类号： H01L23/48 ,  H01L29/94

CPC分类号： H01L21/76844 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/7685 ,  H01L23/53219 ,  H01L23/53223 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a semiconductor device having high reliability, high yield, and such a interconnection structure as short hardly occurs. The semiconductor device comprises a semiconductor substrate, metal conductors formed on a side of a main face of the substrate which metal conductors contain aluminum as main constituent thereof and copper as an additive element, the metal conductors being made to contain such an element as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper.

公开(公告)号：US06548904B2

公开(公告)日：2003-04-15

申请号：US10252685

申请日：2002-09-24

申请人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

发明人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

IPC分类号： H01L2348

CPC分类号： H01L23/53257 ,  H01L27/10814 ,  H01L27/10894 ,  H01L28/55 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device, which comprises a capacitor component comprising a first electrode, an oxide film with a high dielectric constant or ferroelectricity in contact with the first electrode and a second electrode in contact with the oxide film, as formed in this order, on one principal side of a silicon substrate with a metal wiring layer formed thereon, such problems as breaking of tungsten interconnect, lowering of reliability, lowering of yield, etc. of semi-conductor devices can be solved by using molybdenum-containing tungsten as the material of metal interconnect layer.

摘要翻译： 在包括第一电极的电容器组件，具有高介电常数或与第一电极接触的铁电性的氧化膜和与该氧化物膜接触的第二电极的电容器组件中， 在其上形成有金属布线层的硅衬底的主面上，通过使用含钼钨作为材料，可以解决半导体器件的钨互连断裂，可靠性降低，成品率降低等问题 金属互连层。

公开(公告)号：US06784549B2

公开(公告)日：2004-08-31

申请号：US10395248

申请日：2003-03-25

申请人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

发明人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

IPC分类号： H01L2348

CPC分类号： H01L23/53257 ,  H01L27/10814 ,  H01L27/10894 ,  H01L28/55 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device, which comprises a capacitor component comprising a first electrode, an oxide film with a high dielectric constant or ferroelectricity in contact with the first electrode and a second electrode in contact with the oxide film, as formed in this order, on one principal side of a silicon substrate with a metal wiring layer formed thereon, such problems as breaking of tungsten interconnect, lowering of reliability, lowering of yield, etc. of semi-conductor devices can be solved by using molybdenum-containing tungsten as the material of metal interconnect layer.

摘要翻译： 在包括第一电极的电容器组件，具有高介电常数或与第一电极接触的铁电性的氧化膜和与该氧化物膜接触的第二电极的电容器组件中， 在其上形成有金属布线层的硅衬底的主面上，通过使用含钼钨作为材料，可以解决半导体器件的钨互连断裂，可靠性降低，成品率降低等问题 金属互连层。

公开(公告)号：US07241685B2

公开(公告)日：2007-07-10

申请号：US10390413

申请日：2003-03-18

申请人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hideo Miura ,  Shinji Nishihara ,  Masashi Sahara

发明人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hideo Miura ,  Shinji Nishihara ,  Masashi Sahara

IPC分类号： H01L21/44

CPC分类号： H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a semiconductor device having a wiring structure which reduces possibility of a short circuit, and method of making the device. Besides, there is provided a semiconductor device having high reliability. Further, there is provided a semiconductor device having high yield. A wiring line is formed at one main surface side of a semiconductor substrate, and has a laminate structure of an adjacent conductor layer and a main wiring layer. The main wiring layer contains an added element to prevent migration. The adjacent conductor layer is formed of a material for preventing a main constituent element and the added element of the main wiring layer from diffusing into the substrate beneath the adjacent conductor layer, and the concentration of the added element at a location close to an interface between the adjacent conductor layer and the main wiring layer is low compared to the concentration of the added element in the main wiring layer spaced from the adjacent conductor layer.

摘要翻译： 提供一种具有降低短路可能性的布线结构的半导体器件及其制造方法。 此外，提供了具有高可靠性的半导体器件。 此外，提供了一种具有高产率的半导体器件。 在半导体衬底的一个主表面侧形成布线，并且具有相邻导体层和主布线层的叠层结构。 主配线层包含一个添加的元素以防止迁移。 相邻的导体层由用于防止主要构成元素和主配线层的添加元素扩散到相邻导体层下方的基板中的材料形成，并且添加元素在靠近界面处的位置的浓度 与相邻的导体层间隔开的主配线层的添加元素的浓度相比，相邻的导体层和主布线层的电位低。

公开(公告)号：US06545362B2

公开(公告)日：2003-04-08

申请号：US09941616

申请日：2001-08-30

申请人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hideo Miura ,  Shinji Nishihara ,  Masashi Sahara

发明人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hideo Miura ,  Shinji Nishihara ,  Masashi Sahara

IPC分类号： H01L2352

CPC分类号： H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a semiconductor device having a wiring structure which reduces possibility of a short circuit, and method of making the device. Besides, there is provided a semiconductor device having high reliability. Further, there is provided a semiconductor device having high yield. A wiring line is formed at one main surface side of a semiconductor substrate, and has a laminate structure of an adjacent conductor layer and a main wiring layer. The main wiring layer contains an added element to prevent migration. The adjacent conductor layer is formed of a material for preventing a main constituent element and the added element of the main wiring layer from diffusing into the substrate beneath the adjacent conductor layer, and the concentration of the added element at a location close to an interface between the adjacent conductor layer and the main wiring layer is low compared to the concentration of the added element in the main wiring layer spaced from the adjacent conductor layer.

公开(公告)号：US06960832B2

公开(公告)日：2005-11-01

申请号：US10761333

申请日：2004-01-22

申请人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shuji Ikeda

发明人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shuji Ikeda

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L23/12 ,  H01L21/00

CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L21/76877

摘要： In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.

摘要翻译： 在具有钴硅化物膜的半导体器件中，钴硅化物膜中至少含有镍或铁，以防止附着于薄膜变薄的电阻上升。