公开(公告)号：US06761128B2

公开(公告)日：2004-07-13

申请号：US09899188

申请日：2001-07-06

申请人： Toshiyasu Shirasuna ,  Tatsuyuki Aoike ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Takashi Otsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

发明人： Toshiyasu Shirasuna ,  Tatsuyuki Aoike ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Takashi Otsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

IPC分类号： H01L2100

CPC分类号： C23C16/24 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32183 ,  H05H1/46

摘要： In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

摘要翻译： 在通过利用通过高频电源装置将高频电力提供给内部抽真空电抗器而产生的辉光放电来处理目标衬底表面的等离子体处理方法和装置中，多个阻抗调节装置 对应于多个电抗器的阻抗设置在电抗器一侧和高频电源装置一侧上的调节阻抗，并且高频电力通过对应于 反应堆。 可以在具有不同阻抗的多个反应器中以高效率和低成本进行等离子体处理。

公开(公告)号：US07550180B2

公开(公告)日：2009-06-23

申请号：US12055431

申请日：2008-03-26

申请人： Toshiyasu Shirasuna ,  Tatsuyuki Aoike ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Takashi Otsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

发明人： Toshiyasu Shirasuna ,  Tatsuyuki Aoike ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Takashi Otsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： C23C16/24 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32183 ,  H05H1/46

摘要： In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

摘要翻译： 在通过利用通过高频电源装置将高频电力提供给内部抽真空电抗器而产生的辉光放电来处理目标衬底表面的等离子体处理方法和装置中，多个阻抗调节装置 对应于多个电抗器的阻抗设置在电抗器一侧和高频电源装置一侧上的调节阻抗，并且高频电力通过对应于 反应堆。 可以在具有不同阻抗的多个反应器中以高效率和低成本进行等离子体处理。

公开(公告)号：US20080271676A1

公开(公告)日：2008-11-06

申请号：US12055431

申请日：2008-03-26

申请人： Toshiyasu Shirasuna ,  Tatsuyuki Aoike ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Takashi Otsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

发明人： Toshiyasu Shirasuna ,  Tatsuyuki Aoike ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Takashi Otsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

IPC分类号： C23C16/00

CPC分类号： C23C16/24 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32183 ,  H05H1/46

摘要： In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

摘要翻译： 在通过利用通过高频电源装置将高频电力提供给内部抽真空电抗器而产生的辉光放电来处理目标衬底表面的等离子体处理方法和装置中，多个阻抗调节装置 对应于多个电抗器的阻抗设置在电抗器一侧和高频电源装置一侧上的调节阻抗，并且高频电力通过对应于 反应堆。 可以在具有不同阻抗的多个反应器中以高效率和低成本进行等离子体处理。

公开(公告)号：US06486045B2

公开(公告)日：2002-11-26

申请号：US09851552

申请日：2001-05-10

申请人： Takashi Otsuka ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Daisuke Tazawa ,  Kazuto Hosoi

发明人： Takashi Otsuka ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Daisuke Tazawa ,  Kazuto Hosoi

IPC分类号： H01L2120

CPC分类号： H01J37/32082 ,  C23C16/24 ,  C23C16/507

摘要： In order to make possible formation of a deposited film of a relatively large area at a treatment rate which could not accomplished by the plasma process of the prior art, and in order to make possible stable production of the deposited film without variation in film quality, in an apparatus and a method for forming a deposited film, a part of a reaction vessel is formed of a dielectric member, at least one high-frequency electrode is arranged so as to face at least one substrate with interposition of the dielectric member, an earth shield is arranged so as to cover the reaction vessel and the high-frequency electrode, plasma is generated between the high-frequency electrode and the substrate, and a deposited film is formed under the conditions in which the following equation: 0.8×(&egr;2/d3)

摘要翻译： 为了可能以现有技术的等离子体处理不能实现的处理速率形成相对较大面积的沉积膜，为了使膜的质量不变，可以稳定地生产沉积膜， 在用于形成沉积膜的装置和方法中，反应容器的一部分由电介质构成，至少一个高频电极布置成面对至少一个具有电介质构件的衬底， 布置覆盖反应容器和高频电极的接地屏蔽层，在高频电极和基板之间产生等离子体，并且在满足以下等式的条件下形成沉积膜：其中d1 是介电部件的厚度，d2是从高频电极表面到电介质部件的距离，d3是与高频电极表面的距离 ncy电极到接地屏蔽的内表面，epsi1是电介质构件的介电常数，epsi2是反应容器和接地屏蔽之间的空间的介电常数。

公开(公告)号：US06250251B1

公开(公告)日：2001-06-26

申请号：US09282462

申请日：1999-03-31

申请人： Kazuyoshi Akiyama ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Hitoshi Murayama ,  Takashi Otsuka ,  Daisuke Tazawa ,  Kazuto Hosoi

发明人： Kazuyoshi Akiyama ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Hitoshi Murayama ,  Takashi Otsuka ,  Daisuke Tazawa ,  Kazuto Hosoi

IPC分类号： C23C1600

CPC分类号： H01J37/32431 ,  C23C16/24 ,  C23C16/4404

摘要： An object of the present invention is to provide a vacuum processing apparatus and a vacuum processing method capable of effectively preventing film peeling generated in a reaction vessel to provide a deposited film of excellent quality with reduced spherical projections. The present invention provides a vacuum processing apparatus or method utilizing a vessel, means for supplying a gas into the vessel and means for supplying an electric power and in which the gas is decomposed by the electric power to generate a discharge, wherein the surface of a member confronted with the discharge satisfies the conditions of (1) the ten-point mean roughness Rz with respect to a reference length of 2.5 mm according to the JIS standard being in a range of not smaller than 5 &mgr;m and not larger than 200 &mgr;m, and (2) the mean spacing S of adjacent local peaks according to the JIS standard being in a range of not smaller than 5 &mgr;m and not larger than 100 &mgr;m.

摘要翻译： 本发明的目的是提供一种真空处理装置和真空处理方法，其能够有效地防止在反应容器中产生的膜剥离，从而提供具有减小的球形突起的优质的沉积膜。 本发明提供了一种使用容器的真空处理装置或方法，用于向容器供给气体的装置和用于供给电力的装置，其中气体被电力分解以产生排放，其中， 面对放电的构件满足以下条件：（1）根据JIS标准的十点平均粗糙度Rz相对于2.5mm的参考长度在不小于5μm且不大于200μm的范围内， 和（2）根据JIS标准的相邻局部峰的平均间隔S在不小于5μm且不大于100μm的范围内。

公开(公告)号：US06443191B1

公开(公告)日：2002-09-03

申请号：US09842154

申请日：2001-04-26

申请人： Hitoshi Murayama ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuyoshi Akiyama ,  Takashi Ohtsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

发明人： Hitoshi Murayama ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuyoshi Akiyama ,  Takashi Ohtsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

IPC分类号： B65B3100

CPC分类号： H01L21/67017 ,  H01L21/67126

摘要： For making it feasible to suit to vacuum processing utilizing a system consisting of an exhaust section and a separable vacuum processing vessel section, to ensure flexibility of production, to prevent dust from attaching onto an article, so as to achieve increase in non-defective percentage of vacuum-processed articles, and also to suppress variability in vacuum processing characteristics among lots, an article is loaded into a movable vacuum processing vessel section, the vacuum processing vessel section is preliminarily pressure-reduced and moved, the vacuum processing vessel section is connected to an exhaust section, and communication is established between the vacuum processing vessel section and the exhaust section to perform vacuum processing. A first opening provided in the vacuum processing vessel section is connected to a second opening provided in the exhaust section and a vacuum seal valve of the first opening which is openable and closable, is opened. When opening the valve, the internal pressure of the vacuum processing vessel under reduced pressure is set higher than the pressure of another pressure-reduced space to be brought into communication therewith by the opening of the valve.

摘要翻译： 为了使其适用于利用由排气部和可分离真空处理容器部构成的系统的真空处理，为了确保生产的灵活性，防止灰尘附着在物品上，以达到无缺陷百分比的增加 的真空处理容器部分，并且还抑制批次之间的真空处理特性的变化，将物品装载到可移动真空处理容器部分中，真空处理容器部分被预先减压和移动，真空处理容器部分连接 到排气部分，并且在真空处理容器部分和排气部分之间建立连通以进行真空处理。 设置在真空处理容器部分中的第一开口连接到设置在排气部分中的第二开口，并且打开可打开和关闭的第一开口的真空密封阀。 当打开阀时，真空处理容器在减压下的内部压力设定为高于通过打开阀而与其连通的另一压力减小空间的压力。

公开(公告)号：US06300225B1

公开(公告)日：2001-10-09

申请号：US09270211

申请日：1999-03-15

申请人： Ryuji Okamura ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

发明人： Ryuji Okamura ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

IPC分类号： H01L2136

CPC分类号： H01J37/32733 ,  C23C16/509 ,  C23C16/54 ,  H01J2237/2001 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A plasma processing method comprising the steps of arranging a substrate on a film is to be formed in a reaction chamber capable of being vacuumed and evacuating the inside of the reaction chamber in a loading stage; and separating the reaction chamber from the loading stage and joining the reaction chamber to a treating stage where the substrate arranged in the reaction chamber is subjected to plasma processing, wherein the reaction chamber is moved on a track to join to the treating stage, where a high frequency power supply system, a processing gas supply system and an exhaustion system are joined to the reaction chamber, whereby plasma is produced in the reaction chamber to conduct plasma processing on the substrate. An apparatus suitable for practicing said plasma processing method.

摘要翻译： 将等离子体处理方法包括以下步骤：在能够被抽真空的反应室中形成在膜上的基板，并在装载阶段抽空反应室的内部; 并且将反应室与装载阶段分离并将反应室连接到处理阶段，其中布置在反应室中的基板经受等离子体处理，其中反应室在轨道上移动以连接到处理台，其中 高频电源系统，处理气体供给系统和耗尽系统连接到反应室，由此在反应室中产生等离子体以在衬底上进行等离子体处理。 适于实施所述等离子体处理方法的装置。

公开(公告)号：US6165274A

公开(公告)日：2000-12-26

申请号：US184044

申请日：1998-11-02

申请人： Kazuyoshi Akiyama ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Ryuji Okamura ,  Hitoshi Murayama

发明人： Kazuyoshi Akiyama ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Ryuji Okamura ,  Hitoshi Murayama

IPC分类号： G03G5/08 ,  C23C16/44 ,  C23C16/50 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01L31/04 ,  C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/509 ,  H01J37/32724

摘要： A plasma processing apparatus for plasma-processing a substrate arranged in a reaction chamber using a high frequency power supplied by a high frequency power introduction means, wherein said high frequency power introduction means comprises a cathode electrode and a conductor portion capable of transmitting a high frequency power to said cathode electrode, said conductor portion being penetrated a wall of said reaction chamber while said conductor portion being electrically isolated from said wall of said reaction chamber by means of an insulating material, at least a part of said insulating material comprising a porous ceramic material, wherein a fluid is introduced through said porous ceramic material to control the temperature of said cathode electrode and/or that of said conductor portion.

摘要翻译： 一种等离子体处理装置，用于使用由高频功率引入装置提供的高频功率等离子体处理布置在反应室中的基板，其中所述高频功率引入装置包括阴极电极和能够传输高频功率的导体部分 所述导体部分穿过所述反应室的壁，而所述导体部分通过绝缘材料与所述反应室的所述壁电隔离，所述绝缘材料的至少一部分包括多孔陶瓷 材料，其中通过所述多孔陶瓷材料引入流体以控制所述阴极电极和/或所述导体部分的温度。

公开(公告)号：US06649020B1

公开(公告)日：2003-11-18

申请号：US09897961

申请日：2001-07-05

申请人： Ryuji Okamura ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

发明人： Ryuji Okamura ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

IPC分类号： C23C1600

CPC分类号： H01J37/32733 ,  C23C16/509 ,  C23C16/54 ,  H01J2237/2001 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A plasma processing method comprising the steps of arranging a substrate on a film is to be formed in a reaction chamber capable of being vacuumed and evacuating the inside of the reaction chamber in a loading stage; and separating the reaction chamber from the loading stage and joining the reaction chamber to a treating stage where the substrate arranged in the reaction chamber is subjected to plasma processing, wherein the reaction chamber is moved on a track to join to the treating stage, where a high frequency power supply system, a processing gas supply system and an exhaustion system are joined to the reaction chamber, whereby plasma is produced in the reaction chamber to conduct plasma processing on the substrate. An apparatus suitable for practicing said plasma processing method.

摘要翻译： 将等离子体处理方法包括以下步骤：在能够被抽真空的反应室中形成在膜上的基板，并在装载阶段抽空反应室的内部; 并且将反应室与装载阶段分离并将反应室连接到处理阶段，其中布置在反应室中的基板经受等离子体处理，其中反应室在轨道上移动以连接到处理台，其中 高频电源系统，处理气体供给系统和耗尽系统连接到反应室，由此在反应室中产生等离子体以在衬底上进行等离子体处理。 适于实施所述等离子体处理方法的装置。

公开(公告)号：US06702898B2

公开(公告)日：2004-03-09

申请号：US10046318

申请日：2002-01-16

申请人： Kazuto Hosoi ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Ryuji Okamura ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

发明人： Kazuto Hosoi ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Ryuji Okamura ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

IPC分类号： C23C1600

CPC分类号： H01J37/32623 ,  C23C16/509

摘要： For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.

摘要翻译： 为了提高等离子体的均匀性和长期的稳定性，可以容易地形成具有优异的厚度和质量均匀性以及良好的重复性和抑制图像缺陷的发生的膜，并且大大地提高了产率以形成准备进行批量生产的沉积膜，特别是 在包括能够被气密抽真空的反应容器的设备中形成功能性沉积膜（例如，用于半导体器件的非晶半导体，电子照相感光构件，光伏器件等），反应容器中的衬底保持器 ，源气源，高频电源。 在每个基板保持器，源气体供应和电源的端部设置端盖部件。