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    EPITAXIAL SILICON WAFER AND FABRICATION METHOD THEREOF
    1.
    发明申请
    EPITAXIAL SILICON WAFER AND FABRICATION METHOD THEREOF 有权
    外延硅晶片及其制造方法

    公开(公告)号：US20110239931A1

    公开(公告)日：2011-10-06

    申请号：US13164511

    申请日：2011-06-20

    申请人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

    发明人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

    IPC分类号： C30B25/20

    CPC分类号： H01L21/02634 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02609 ,  H01L22/00 ,  H01L29/045 ,  H01L29/32 ,  H01L2924/0002 ,  Y10S117/902 ,  H01L2924/00

    摘要： An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the silicon wafer for growing the epitaxial layer thereon, an inclination angle azimuth of the {110} plane is in the range of 0 to 45 degrees as measured from a orientation parallel to the {110} plane toward a direction. With such an arrangement, LPDs of 100 nm or less can be measured from a {110} wafer that has a carrier mobility (including the hole and electron mobilities) higher than that of a {100} wafer. Also, surface roughness degradation in the {110} wafer can be suppressed. Also, the surface state of the {110} wafer can be measured. Further, a quality evaluation can be performed on the {110} wafer.

    摘要翻译： 提供了一种外延硅晶片，其中外延层生长在具有从作为主表面的硅单晶的{110}面倾斜的平面的硅晶片上。 在用于在其上生长外延层的硅晶片中，从平行于{110}平面朝向<100>的<100>取向测量，{110}面的倾斜角方位角在0至45度的范围内， 方向。 通过这样的布置，可以从具有高于{100}晶片的载流子迁移率（包括空穴和电子迁移率）的{110}晶片测量100nm或更小的LPD。 此外，可以抑制{110}晶片中的表面粗糙度劣化。 此外，可以测量{110}晶片的表面状态。 此外，可以对{110}晶片进行质量评估。

    Epitaxial silicon wafer and fabrication method thereof
    2.
    发明授权
    Epitaxial silicon wafer and fabrication method thereof 有权
    外延硅晶片及其制造方法

    公开(公告)号：US07989073B2

    公开(公告)日：2011-08-02

    申请号：US11850591

    申请日：2007-09-05

    申请人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

    发明人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

    IPC分类号： B32B9/00

    CPC分类号： H01L21/02634 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02609 ,  H01L22/00 ,  H01L29/045 ,  H01L29/32 ,  H01L2924/0002 ,  Y10S117/902 ,  H01L2924/00

    摘要： An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the silicon wafer for growing the epitaxial layer thereon, an inclination angle azimuth of the {110} plane is in the range of 0 to 45 degrees as measured from a orientation parallel to the {110} plane toward a direction. With such an arrangement, LPDs of 100 nm or less can be measured from a {110} wafer that has a carrier mobility (including the hole and electron mobilities) higher than that of a {100 } wafer. Also, surface roughness degradation in the {110} wafer can be suppressed. Also, the surface state of the {110} wafer can be measured. Further, a quality evaluation can be performed on the {110} wafer.

    摘要翻译： 提供了一种外延硅晶片，其中外延层生长在具有从作为主表面的硅单晶的{110}面倾斜的平面的硅晶片上。 在用于在其上生长外延层的硅晶片中，从平行于{110}平面朝向<110>面的<100>取向测量，{110}面的倾斜角方位角在0至45度的范围内， 方向。 通过这样的布置，可以从具有高于{100}晶片的载流子迁移率（包括空穴和电子迁移率）的{110}晶片测量100nm或更小的LPD。 此外，可以抑制{110}晶片中的表面粗糙度劣化。 此外，可以测量{110}晶片的表面状态。 此外，可以对{110}晶片进行质量评估。

    Epitaxial silicon wafer and fabrication method thereof
    3.
    发明授权
    Epitaxial silicon wafer and fabrication method thereof 有权
    外延硅晶片及其制造方法

    公开(公告)号：US08152919B2

    公开(公告)日：2012-04-10

    申请号：US13164511

    申请日：2011-06-20

    申请人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

    发明人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

    IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

    CPC分类号： H01L21/02634 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02609 ,  H01L22/00 ,  H01L29/045 ,  H01L29/32 ,  H01L2924/0002 ,  Y10S117/902 ,  H01L2924/00

    摘要： An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the silicon wafer for growing the epitaxial layer thereon, an inclination angle azimuth of the {110} plane is in the range of 0 to 45 degrees as measured from a orientation parallel to the {110} plane toward a direction. With such an arrangement, LPDs of 100 nm or less can be measured from a {110} wafer that has a carrier mobility (including the hole and electron mobilities) higher than that of a {100} wafer. Also, surface roughness degradation in the {110} wafer can be suppressed. Also, the surface state of the {110} wafer can be measured. Further, a quality evaluation can be performed on the {110} wafer.

    摘要翻译： 提供了一种外延硅晶片，其中外延层生长在具有从作为主表面的硅单晶的{110}面倾斜的平面的硅晶片上。 在用于在其上生长外延层的硅晶片中，从平行于{110}平面朝向<100>的<100>取向测量，{110}面的倾斜角方位角在0至45度的范围内， 方向。 通过这样的布置，可以从具有高于{100}晶片的载流子迁移率（包括空穴和电子迁移率）的{110}晶片测量100nm或更小的LPD。 此外，可以抑制{110}晶片中的表面粗糙度劣化。 此外，可以测量{110}晶片的表面状态。 此外，可以对{110}晶片进行质量评估。

    EPITAXIAL SILICON WAFER AND FABRICATION METHOD THEREOF
    4.
    发明申请
    EPITAXIAL SILICON WAFER AND FABRICATION METHOD THEREOF 有权
    外延硅晶片及其制造方法

    公开(公告)号：US20080057323A1

    公开(公告)日：2008-03-06

    申请号：US11850591

    申请日：2007-09-05

    申请人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

    发明人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

    IPC分类号： B32B9/00 ,  C30B29/10

    CPC分类号： H01L21/02634 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02609 ,  H01L22/00 ,  H01L29/045 ,  H01L29/32 ,  H01L2924/0002 ,  Y10S117/902 ,  H01L2924/00

    摘要： An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the silicon wafer for growing the epitaxial layer thereon, an inclination angle azimuth of the {110} plane is in the range of 0 to 45 degrees as measured from a orientation parallel to the {110} plane toward a direction. With such an arrangement, LPDs of 100 nm or less can be measured from a {110} wafer that has a carrier mobility (including the hole and electron mobilities) higher than that of a {100} wafer. Also, surface roughness degradation in the {110} wafer can be suppressed. Also, the surface state of the {110} wafer can be measured. Further, a quality evaluation can be performed on the {110} wafer.

    摘要翻译： 提供了一种外延硅晶片，其中外延层生长在具有从作为主表面的硅单晶的{110}面倾斜的平面的硅晶片上。 在用于在其上生长外延层的硅晶片中，从平行于{110}面朝向<110>面的<100>取向测量，{110}面的倾斜角方位角在0至45度的范围内， 方向。 通过这样的布置，可以从具有高于{100}晶片的载流子迁移率（包括空穴和电子迁移率）的{110}晶片测量100nm或更小的LPD。 此外，可以抑制{110}晶片中的表面粗糙度劣化。 此外，可以测量{110}晶片的表面状态。 此外，可以对{110}晶片进行质量评估。

    EPITAXIAL WAFER AND METHOD OF PRODUCING SAME
    6.
    发明申请
    EPITAXIAL WAFER AND METHOD OF PRODUCING SAME 有权
    外源波浪及其生产方法

    公开(公告)号：US20080057324A1

    公开(公告)日：2008-03-06

    申请号：US11850599

    申请日：2007-09-05

    申请人： Shinji Nakahara ,  Masato Sakai ,  Takayuki Dohi

    发明人： Shinji Nakahara ,  Masato Sakai ,  Takayuki Dohi

    IPC分类号： B32B9/04 ,  C30B29/10

    CPC分类号： C30B25/20 ,  C30B23/02 ,  C30B25/02 ,  C30B29/06 ,  C30B33/005 ,  H01L21/02024 ,  H01L21/76814

    摘要： A method of producing an epitaxial wafer, comprising: performing epitaxial growth of silicon on a main surface of a wafer made of a silicon single crystal; performing surface flattening pretreatment of a main surface of the wafer using a treatment liquid of a predetermined composition at a temperature of 100° C. or less, thereby forming an oxide film of a predetermined thickness while removing particles adhered on the main surface of the wafer; and performing a surface polishing step where the main surface of the wafer is mirror polished.

    摘要翻译： 一种制造外延晶片的方法，包括：在由硅单晶构成的晶片的主表面上进行硅的外延生长; 使用预定组成的处理液在100℃以下的温度下对晶片的主表面进行表面平整预处理，从而形成预定厚度的氧化膜，同时除去附着在晶片主表面上的颗粒 ; 并进行表面抛光步骤，其中晶片的主表面被镜面抛光。

    Belt device and image forming apparatus
    7.
    发明授权
    Belt device and image forming apparatus 有权
    皮带装置和成像装置

    公开(公告)号：US08290417B2

    公开(公告)日：2012-10-16

    申请号：US12752243

    申请日：2010-04-01

    申请人： Masato Sakai

    发明人： Masato Sakai

    IPC分类号： G03G15/20

    CPC分类号： G03G15/206 ,  G03G2215/2009

    摘要： A belt device includes a belt member and a pressurizing member. The belt member is rotated with rotation of a rotation member, and the pressurizing member includes a pressing portion pressing an inner circumferential surface of the belt member. The pressing portion includes a surface layer having a solid lubricating agent and a fine particle.

    摘要翻译： 皮带装置包括皮带部件和加压部件。 带构件随着旋转构件的旋转而旋转，加压构件包括按压带构件的内周面的按压部。 按压部分包括具有固体润滑剂和细颗粒的表面层。

    Fixing device and image forming apparatus
    9.
    发明申请
    Fixing device and image forming apparatus 有权
    固定装置和成像装置

    公开(公告)号：US20090190974A1

    公开(公告)日：2009-07-30

    申请号：US12357777

    申请日：2009-01-22

    申请人： Masato Sakai

    发明人： Masato Sakai

    IPC分类号： G03G15/20

    CPC分类号： G03G15/2028

    摘要： A fixing apparatus including a fixing member for fixing developer image on a recording medium, and a separation member separating the recording medium from the fixing member to guide the recording medium in a delivery direction of the recording medium. The separation member includes a resin member, a metal member formed on a front side of the resin member, and an opening. In accordance with a preferred aspect of the fixing apparatus, when the developer image is fixed to the recording medium, the opening arranged at the separation member is formed to flow the gas around the fixing apparatus, thereby improving the printing quality of the printed images.

    摘要翻译： 一种定影装置，包括用于将显影剂图像定影在记录介质上的固定构件，以及分离构件，用于将记录介质与固定构件分开，以沿记录介质的传送方向引导记录介质。 分离构件包括树脂构件，形成在树脂构件的前侧上的金属构件和开口。 根据定影装置的优选方案，当显影剂图像被固定到记录介质上时，形成分离构件上的开口以使气体围绕定影装置流动，从而提高打印图像的打印质量。

    POWER TOOL
    10.
    发明申请
    POWER TOOL 有权
    电动工具

    公开(公告)号：US20080185410A1

    公开(公告)日：2008-08-07

    申请号：US11944512

    申请日：2007-11-23

    申请人： Katsuhiro OOMORI ,  Tomoyuki Hoshi ,  Hideki Ishida ,  Masato Sakai ,  Takuya Teranishi ,  Takeshi Taniguchi ,  Takuma Saito ,  Naoki Tadokoro ,  Hideyuki Hashimoto ,  Akira Oono

    发明人： Katsuhiro OOMORI ,  Tomoyuki Hoshi ,  Hideki Ishida ,  Masato Sakai ,  Takuya Teranishi ,  Takeshi Taniguchi ,  Takuma Saito ,  Naoki Tadokoro ,  Hideyuki Hashimoto ,  Akira Oono

    IPC分类号： B25F5/00 ,  A45F5/00

    CPC分类号： B25F5/029 ,  B25C7/00 ,  B25F5/02 ,  Y10S224/904

    摘要： An electric driver includes a hook portion which is constituted by a hook-like portion and a connecting portion for connecting the hook-like portion to the handle. The hook-like portion is constituted by a base portion connected to the connecting portion and a bent portion continuous to the base portion and a front end portion continuous to the bent portion and arranged at a position substantially opposed to the base portion and can be deformed. The front end portion and the base portion can be proximate to and remote from each other. The connecting portion holds the hook-like portion in a state of being hung down in a direction substantially the same as a direction of extending the handle. The hook-like portion is held centering on a first rotating axis center extended in the direction of hanging down the hook-like portion pivotably relative to the handle.

    摘要翻译： 电动驱动器包括由钩状部分和用于将钩状部分连接到手柄的连接部分构成的钩部。 钩状部分由连接到连接部分的基部和与基部连续的弯曲部分和与弯曲部分连续的前端部分构成，并且布置在与基部基本相对的位置并且可以变形 。 前端部分和基部部分可以彼此靠近和远离。 连接部将钩状部保持在与延伸手柄的方向大致相同的方向上被挂起的状态。 钩状部分以围绕钩状部分相对于手柄可枢转地方向悬挂的方向延伸的第一旋转轴心定心。