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    Polishing pad, process for producing the same and method of polishing therewith
    2.
    发明申请
    Polishing pad, process for producing the same and method of polishing therewith 审中-公开
    抛光垫，其制造方法和抛光方法

    公开(公告)号：US20060199473A1

    公开(公告)日：2006-09-07

    申请号：US10551457

    申请日：2004-04-02

    申请人： Masao Suzuki ,  Hiroshi Nakagawa ,  Masato Yoshida ,  Masaya Nishiyama ,  Yasuo Shimamura

    发明人： Masao Suzuki ,  Hiroshi Nakagawa ,  Masato Yoshida ,  Masaya Nishiyama ,  Yasuo Shimamura

    IPC分类号： B24B49/00 ,  B24B7/30 ,  B24D11/00

    CPC分类号： B24B37/24 ,  B24D18/0027

    摘要： Provided is a polishing pad comprising a fiber including organic fiber and a matrix resin holding the fiber, wherein at least the organic fiber is exposed on the work material-side surface thereof at least after dressing. The polishing pad suppresses generation of minute polishing scratches on the work material and allows flat polishing at low load. It in also possible to manage the polishing end point of the work material without generation of polishing scratch with its optical detection system monitoring the polishing state of work material. Thus, for example, it is possible to polish substrates under a small load on the interlayer insulating film and give products superior in flatness in semiconductor device manufacturing processes and thus, the polishing pad according to the invention may be used easily in the next-generation dual damascene method.

    摘要翻译： 提供了一种抛光垫，其包括含有有机纤维的纤维和保持纤维的基质树脂，其中至少有机纤维至少在敷料后在其工件材料侧表面上露出。 抛光垫可抑制在工件上产生微小的抛光划痕，并能够在低负载下进行平坦抛光。 也可以通过其光学检测系统监控工件材料的抛光状态来管理工件材料的抛光终点而不产生抛光刮痕。 因此，例如，可以在层间绝缘膜上以较小的载荷对基板进行抛光，并且可以提供半导体器件制造工艺中的平坦度优异的产品，因此根据本发明的抛光垫可以容易地用于下一代 双镶嵌法。

    Polishing slurry for silicon oxide, additive liquid and polishing method
    4.
    发明申请
    Polishing slurry for silicon oxide, additive liquid and polishing method 审中-公开
    抛光浆料用于氧化硅，添加剂液体和抛光方法

    公开(公告)号：US20070175104A1

    公开(公告)日：2007-08-02

    申请号：US11594988

    申请日：2006-11-09

    申请人： Masaya Nishiyama ,  Kazuhiro Enomoto ,  Masato Fukasawa ,  Toshiaki Akutsu ,  Yuuto Otsuki ,  Toranosuke Ashizawa

    发明人： Masaya Nishiyama ,  Kazuhiro Enomoto ,  Masato Fukasawa ,  Toshiaki Akutsu ,  Yuuto Otsuki ,  Toranosuke Ashizawa

    IPC分类号： B24D3/02

    CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

    摘要： The polishing slurry of the invention is a polishing slurry for polishing a silicon oxide film on polysilicon, which contains an abrasive, polysilicon polishing inhibitor, and water. As the polishing inhibitor, it is preferable to use (1) a water-soluble polymer having a N-monosubstituted or N,N-disubstituted skeleton substituted by any member selected from the group consisting of acrylamide, methacrylamide, and α-substituted derivatives thereof, (2) polyethylene glycol, (3) an oxyethylene adduct of an acetylene-based diol, (4) a water-soluble organic compound having an acetylene bond, (5) an alkoxylated linear aliphatic alcohol, or (6) a copolymer containing polyvinyl pyrrolidone or vinyl pyrrolidone. There is provided a polishing method which is capable of polishing a silicon oxide film on a polysilicon film at a high speed, and inhibiting the progress of polishing of a polysilicon film in exposed parts in the manufacturing method for a semiconductor.

    摘要翻译： 本发明的研磨浆是用于研磨含有研磨剂，多晶硅研磨抑制剂和水的多晶硅上的氧化硅膜的研磨浆料。 作为抛光抑制剂，优选使用（1）具有由选自丙烯酰胺，甲基丙烯酰胺及其α-取代衍生物的任何成员取代的N-单取代或N，N-二取代骨架的水溶性聚合物 ，（2）聚乙二醇，（3）乙炔类二醇的氧乙烯加合物，（4）具有乙炔键的水溶性有机化合物，（5）烷氧基化线性脂族醇，或（6）含有 聚乙烯吡咯烷酮或乙烯基吡咯烷酮。 提供了一种能够在多晶硅膜上高速抛光氧化硅膜的抛光方法，并且在半导体的制造方法中抑制了露出部分中的多晶硅膜的研磨进展。

    CMP SLURRY FOR SILICON FILM
    5.
    发明申请
    CMP SLURRY FOR SILICON FILM 审中-公开
    CMP硅胶膜

    公开(公告)号：US20100001229A1

    公开(公告)日：2010-01-07

    申请号：US12547802

    申请日：2009-08-26

    申请人： Hiroshi Nakagawa ,  Toranosuke Ashizawa ,  Takenori Narita ,  Masaya Nishiyama

    发明人： Hiroshi Nakagawa ,  Toranosuke Ashizawa ,  Takenori Narita ,  Masaya Nishiyama

    IPC分类号： C09K13/00

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212

    摘要： The present invention provides a CMP slurry for silicon film, and by using such the slurry, polishing rates and polishing rate ratios of a silicon film, a silicon nitride film and a silicon oxide film required for performing CMP are obtained. In the CMP, a single slurry is used for forming a contact plug in self-alignment manner to decrease costs for producing semiconductor elements and improve yield. The slurry comprises abrasive grains, a cationic surfactant and water and has a pH value of 6.0 to 8.0.

    摘要翻译： 本发明提供了一种用于硅膜的CMP浆料，并且通过使用这样的浆料，获得了执行CMP所需的硅膜，氮化硅膜和氧化硅膜的抛光速率和抛光速率比。 在CMP中，使用单个浆料以自对准方式形成接触塞，以降低制造半导体元件的成本并提高产量。 浆料包含磨粒，阳离子表面活性剂和水，pH值为6.0〜8.0。