摘要:
A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.
摘要:
A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.
摘要:
A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist-modifying composition comprises a carbamate compound and a solvent.
摘要:
A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist-modifying composition comprises a carbamate compound and a solvent.
摘要:
A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°.
摘要:
A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°.
摘要:
An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, k is 0 or 1, Z is a divalent C2-C20 hydrocarbon group which forms a single ring or bridged ring with the carbon atom and which may contain a hetero atom, m is 0 or 1, n is 0, 1, 2 or 3, and 2m+n=2 or 3. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and is suited for micropatterning using electron beams or deep-UV.
摘要翻译:提供下式(1)的酯化合物:R1是H,甲基或CH2CO2R3,R2是H,甲基或CO2R3,R3是C1-C15烷基,k是0或1,Z是二价C 2 -C 20烃 与碳原子形成单环或桥环的基团,其可以含有杂原子,m为0或1,n为0,1,2或3,2m + n = 2或3.一种抗蚀剂组合物,其包含 作为基础树脂,由酯化合物产生的聚合物对高能辐射敏感,具有优异的灵敏度,分辨率和耐蚀刻性,并且适用于使用电子束或深UV的微图案。
摘要:
An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, Z is a divalent C2-C20 hydrocarbon group which forms a single ring or bridged ring with the carbon atom, m is 0 or 1, n is 0, 1, 2 or 3, and 2m+n=2 or 3. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for micropatterning using electron beams or deep-UV.
摘要翻译:提供下式(1)的酯化合物:R 1是H,甲基或CH 2 CO 2 R 3,R 2是H,甲基或CO 2 R 3,R 3是C 1 -C 15烷基,Z是形成单环的二价C 2 -C 20烃基 或与碳原子的桥环,m为0或1,n为0,1,2或3,2m + n = 2或3.含有由酯化合物得到的聚合物作为基础树脂的抗蚀剂组合物是敏感的 对高能辐射,具有优异的灵敏度和分辨率,适用于使用电子束或深紫外线的微图案。
摘要:
A polymer comprising recurring units of formula (1) and having a Mw of 1,000-500,000 is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is alkyl, R4 is H, alkyl, alkoxyalkyl or acyl, R5 and R15 are acid labile groups, and at least one of R6 to R9 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the remainders are H or alkyl, at least one of R10 to R13 is a monovalent hydrocarbon group containing a —CO2— partial structure, and the remainders are H or alkyl, R14 is a polycyclic hydrocarbon group or polycyclic hydrocarbon-containing alkyl group, Z is a trivalent hydrocarbon group, X is —CH2— or —O—, k=0 or 1, x is>0, a, b, c and d are≧0, satisfying x+a+b+c+d=1. A resist composition comprising the polymer has significantly improved sensitivity, resolution and etching resistance and is very useful in microfabrication.
摘要翻译:提供了包含式(1)的重复单元并且具有1,000-500,000的Mw的聚合物.R1是H,甲基或CH2CO2R3,R2是H,甲基或CO2R3,R3是烷基,R4是H,烷基,烷氧基烷基或酰基 ,R 5和R 15是酸不稳定基团,R6至R9中的至少一个是含羧基或含羟基的一价烃基,剩余物为H或烷基,R 10至R 13中的至少一个为含有 -CO 2部分结构,其余为H或烷基,R 14为多环烃基或含多环烃基的烷基,Z为三价烃基,X为-CH 2 - 或-O-,k = 0或1 ,x为> 0,a,b,c和d为> = 0,满足x + a + b + c + d = 1。 包含聚合物的抗蚀剂组合物具有显着提高的灵敏度,分辨率和耐蚀刻性,并且在微细加工中非常有用。
摘要:
A resist composition comprising an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl ester compound as a dissolution regulator has a high sensitivity, resolution, etching resistance and storage stability and lends itself to micropatterning with electron beams or deep-UV rays.