-
1.发明授权Resist underlayer film composition, process for forming resist underlayer film, patterning process and fullerene derivative 有权抗蚀剂下层膜组合物，形成抗蚀剂下层膜的工艺，图案化工艺和富勒烯衍生物公开(公告)号：US08835092B2
公开(公告)日：2014-09-16
申请号：US13015094
申请日：2011-01-27
申请人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
CPC分类号： C07C69/753 , C07C2604/00 , C08L61/06 , G03F7/094 , G03F7/40
摘要： There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.
摘要翻译： 公开了用于光刻的多层抗蚀剂膜的抗蚀剂下层膜组合物，其包含（A）具有由热不稳定基团保护的羧基的富勒烯衍生物和（B）有机溶剂。 可以存在用于形成抗蚀剂底层的光刻用的多层抗蚀剂膜的抗蚀剂下层膜组合物，其中可以高度抑制基板蚀刻中的摆动的产生，并且可以使用化学放大抗蚀剂形成上层图案的中毒问题 避免形成抗蚀剂下层膜的方法，图案化工艺和富勒烯衍生物。
-
2.发明申请RESIST UNDERLAYER FILM COMPOSITION, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS AND FULLERENE DERIVATIVE 有权抗静电膜组合物，形成电阻膜的方法，方法和全氟烷烃衍生物公开(公告)号：US20110195362A1
公开(公告)日：2011-08-11
申请号：US13015094
申请日：2011-01-27
申请人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
CPC分类号： C07C69/753 , C07C2604/00 , C08L61/06 , G03F7/094 , G03F7/40
摘要： There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.
摘要翻译： 公开了用于光刻的多层抗蚀剂膜的抗蚀剂下层膜组合物，其包含（A）具有由热不稳定基团保护的羧基的富勒烯衍生物和（B）有机溶剂。 可以存在用于形成抗蚀剂底层的光刻用的多层抗蚀剂膜的抗蚀剂下层膜组合物，其中可以高度抑制基板蚀刻中的摆动的产生，并且可以使用化学放大抗蚀剂形成上层图案的中毒问题 避免形成抗蚀剂下层膜的方法，图案化工艺和富勒烯衍生物。
-
3.发明授权Resist underlayer film-forming composition, process for forming resist underlayer film and patterning process 有权抗蚀剂下层膜形成组合物，形成抗蚀剂下层膜的工艺和图案化工艺公开(公告)号：US08603732B2
公开(公告)日：2013-12-10
申请号：US12978978
申请日：2010-12-27
申请人： Tsutomu Ogihara , Takeru Watanabe , Takeshi Kinsho , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Tsutomu Ogihara , Takeru Watanabe , Takeshi Kinsho , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
CPC分类号： G03F7/11 , B82Y10/00 , C08G61/02 , C08G2261/3424 , G03F7/0752 , H01L21/0332 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.
摘要翻译： 公开了一种抗蚀剂下层膜形成组合物，其至少包括：通过以下通式（1）表示的化合物与下列通式（2）表示的化合物缩合得到的树脂（A）：通过 酸催化剂; 由通式（1）表示的化合物（B）; 富勒烯化合物（C）; 和有机溶剂。 在光刻中使用的多层抗蚀剂膜中可以存在抗蚀剂下层膜组合物，该下层膜具有优异的填充基板的高度差的性能，具有耐溶剂性，并且不仅能够防止 在蚀刻基板期间发生扭曲，而且能够提供优异的图案粗糙度; 通过使用该组合物形成抗蚀剂下层膜的方法; 和图案化过程。
-
4.发明授权公开(公告)号：US08846846B2
公开(公告)日：2014-09-30
申请号：US13227754
申请日：2011-09-08
IPC分类号： H01L21/311 , C08G8/02 , G03F7/004 , H01L21/31 , G03F7/09
摘要： A naphthalene derivative having formula (1) is provided wherein Ar1 and Ar2 denote a benzene or naphthalene ring, and n is such a natural number as to provide a weight average molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.
摘要翻译： 提供具有式（1）的萘衍生物，其中Ar1和Ar2表示苯或萘环，n是这样的自然数，以提供高达100,000的重均分子量。 包含萘衍生物或包含萘衍生物的聚合物的材料被旋涂以形成具有改进性能的抗蚀剂底层。 通过旋涂形成的抗蚀剂底层与通过CVD形成的无机硬掩模组合的图案形成方法是可用的。
-
5.发明授权Naphthalene derivative, resist bottom layer material, resist bottom layer forming method, and patterning process 有权萘衍生物，抗蚀剂底层材料，抗蚀剂底层形成方法和图案化工艺公开(公告)号：US08795955B2
公开(公告)日：2014-08-05
申请号：US13165536
申请日：2011-06-21
IPC分类号： G03F7/20 , C07D311/78 , B05D3/12 , C08G65/00 , B05D3/10 , C07C43/20 , C07D307/77 , C07C43/275 , C09D201/06
CPC分类号： C07C43/275 , B05D3/10 , B05D3/12 , C07C43/20 , C07C2603/18 , C07D307/77 , C07D311/78 , C08G65/00 , C09D201/06 , G03F7/0397 , G03F7/091
摘要： A naphthalene derivative having formula (1) is provided wherein cyclic structures Ar1 and Ar2 denote a benzene or naphthalene ring, X is a single bond or C1-C20 alkylene, m is 0 or 1, and n is such a natural number as to provide a molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.
摘要翻译： 提供具有式（1）的萘衍生物，其中环状结构Ar1和Ar2表示苯或萘环，X为单键或C1-C20亚烷基，m为0或1，n为自然数，提供 分子量高达100,000。 包含萘衍生物或包含萘衍生物的聚合物的材料被旋涂以形成具有改进性能的抗蚀剂底层。 通过旋涂形成的抗蚀剂底层与通过CVD形成的无机硬掩模组合的图案形成方法是可用的。
-
6.发明申请BIPHENYL DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS 有权BIPHENYL DERIVATIVE，RESITE BOTTOM LAYER MATERIAL，BOTTOM LAYER FORMING METHOD，AND PATTERNING PROCESS公开(公告)号：US20120252218A1
公开(公告)日：2012-10-04
申请号：US13424455
申请日：2012-03-20
申请人： Daisuke Kori , Takeshi Kinsho , Katsuya Takemura , Tsutomu Ogihara , Takeru Watanabe , Hiroyuki Urano
发明人： Daisuke Kori , Takeshi Kinsho , Katsuya Takemura , Tsutomu Ogihara , Takeru Watanabe , Hiroyuki Urano
IPC分类号： H01L21/311 , C08G61/02 , C07C39/17 , C09D165/02 , C09D171/12 , C09D5/00 , H01L21/312 , C08G65/38
CPC分类号： C07C39/17 , C09D161/12 , G03F7/091 , G03F7/094
摘要： A biphenyl derivative having formula (1) is provided wherein Ar1 and Ar2 denote a benzene or naphthalene ring, and x and z each are 0 or 1. A material comprising the biphenyl derivative or a polymer comprising recurring units of the biphenyl derivative is spin coated and heat treated to form a resist bottom layer having improved properties, optimum values of n and k, step coverage, etch resistance, heat resistance, solvent resistance, and minimized outgassing.
摘要翻译： 提供具有式（1）的联苯衍生物，其中Ar1和Ar2表示苯或萘环，x和z各自为0或1.包含联苯衍生物或包含联苯衍生物的重复单元的聚合物的材料是旋涂 并进行热处理以形成具有改进性能，n和k的最佳值，台阶覆盖率，耐蚀刻性，耐热性，耐溶剂性和最小化除气的抗蚀剂底层。
-
7.发明申请NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, RESIST BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS 有权萘衍生物，抗蚀剂底层材料，电阻层成型方法和图案处理公开(公告)号：US20110311920A1
公开(公告)日：2011-12-22
申请号：US13165536
申请日：2011-06-21
IPC分类号： G03F7/20 , C07D311/78 , B05D3/12 , C08G65/00 , B05D3/10 , C07C43/20 , C07D307/77
CPC分类号： C07C43/275 , B05D3/10 , B05D3/12 , C07C43/20 , C07C2603/18 , C07D307/77 , C07D311/78 , C08G65/00 , C09D201/06 , G03F7/0397 , G03F7/091
摘要： A naphthalene derivative having formula (1) is provided wherein cyclic structures Ar1 and Ar2 denote a benzene or naphthalene ring, X is a single bond or C1-C10 alkylene, m is 0 or 1, and n is such a natural number as to provide a molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.
摘要翻译： 提供具有式（1）的萘衍生物，其中环状结构Ar1和Ar2表示苯或萘环，X为单键或C1-C10亚烷基，m为0或1，n为自然数，提供 分子量高达100,000。 包含萘衍生物或包含萘衍生物的聚合物的材料被旋涂以形成具有改进性能的抗蚀剂底层。 通过旋涂形成的抗蚀剂底层与通过CVD形成的无机硬掩模组合的图案形成方法是可用的。
-
8.发明授权Biphenyl derivative, resist bottom layer material, bottom layer forming method, and patterning process 有权联苯衍生物，抗蚀底层材料，底层形成方法和图案化工艺公开(公告)号：US08835697B2
公开(公告)日：2014-09-16
申请号：US13424455
申请日：2012-03-20
申请人： Daisuke Kori , Takeshi Kinsho , Katsuya Takemura , Tsutomu Ogihara , Takeru Watanabe , Hiroyuki Urano
发明人： Daisuke Kori , Takeshi Kinsho , Katsuya Takemura , Tsutomu Ogihara , Takeru Watanabe , Hiroyuki Urano
IPC分类号： C07C39/17 , G03F7/09 , C09D161/12
CPC分类号： C07C39/17 , C09D161/12 , G03F7/091 , G03F7/094
摘要： A biphenyl derivative having formula (1) is provided wherein Ar1 and Ar2 denote a benzene or naphthalene ring, and x and z each are 0 or 1. A material comprising the biphenyl derivative or a polymer comprising recurring units of the biphenyl derivative is spin coated and heat treated to form a resist bottom layer having improved properties, optimum values of n and k, step coverage, etch resistance, heat resistance, solvent resistance, and minimized outgassing.
摘要翻译： 提供具有式（1）的联苯衍生物，其中Ar1和Ar2表示苯或萘环，x和z各自为0或1.包含联苯衍生物或包含联苯衍生物的重复单元的聚合物的材料是旋涂 并进行热处理以形成具有改进性能，n和k的最佳值，台阶覆盖率，耐蚀刻性，耐热性，耐溶剂性和最小化除气的抗蚀剂底层。
-
9.发明申请公开(公告)号：US20120064725A1
公开(公告)日：2012-03-15
申请号：US13227754
申请日：2011-09-08
IPC分类号： H01L21/311 , C08G8/02 , G03F7/004 , H01L21/31
摘要： A naphthalene derivative having formula (1) is provided wherein An and Art denote a benzene or naphthalene ring, and n is such a natural number as to provide a weight average molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.
摘要翻译： 提供式（1）的萘衍生物，其中An和Art表示苯或萘环，n是这样的自然数，以提供高达100,000的重均分子量。 包含萘衍生物或包含萘衍生物的聚合物的材料被旋涂以形成具有改进性能的抗蚀剂底层。 通过旋涂形成的抗蚀剂底层与通过CVD形成的无机硬掩模组合的图案形成方法是可用的。
-
10.发明授权公开(公告)号：US08853031B2
公开(公告)日：2014-10-07
申请号：US13313650
申请日：2011-12-07
申请人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho
发明人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho
IPC分类号： H01L21/336 , C08G10/02 , G03F7/09
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译： 公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种由以下通式（1-1）和/或（1-2）表示的化合物的缩合得到的聚合物，以及一种或 更多种由以下通式（2-1）和/或（2-2）表示的化合物和/或其等价物。 可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值作为抗反射膜的下层膜）的三层抗蚀剂工艺的下层膜组合物， 特别是在60nm以上的高方位线上，特别是在蚀刻后，不会引起线下落或翘曲，以及使用其的图案化处理。
-
-
-
-
-
-
-
-
-
搜索结果
125 条记录 (耗时 0.035 秒)