公开(公告)号：US5070272A

公开(公告)日：1991-12-03

申请号：US547226

申请日：1990-07-03

申请人： Takeshi Kikawa ,  Kazutaka Tsuji ,  Kenji Sameshima ,  Tadaaki Hirai ,  Junichi Yamazaki ,  Misao Kubota ,  Keiichi Shidara

发明人： Takeshi Kikawa ,  Kazutaka Tsuji ,  Kenji Sameshima ,  Tadaaki Hirai ,  Junichi Yamazaki ,  Misao Kubota ,  Keiichi Shidara

IPC分类号： H01J31/38 ,  H01J29/45 ,  H01J29/86 ,  H01J29/88 ,  H01L27/146 ,  H01L31/024 ,  H01L31/0272 ,  H01L31/0392 ,  H01L31/09

CPC分类号： H01L31/0392 ,  H01J29/45 ,  H01L31/024 ,  H01L31/0272 ,  H01L31/09 ,  Y02E10/50

摘要： A photoconductive device having a transparent substrate, a transparent conductive film, a photoconductive film and a layer of an insulator provided on at least part of the substrate and of high thermal conductivity, and a method of operating the photoconductive device. Thus, especially, the temperature of a photoconductive film of an imaging device typical of an image pick-up tube or the photoconductive device which may be a one- or a two-dimensional image sensor or a photocell can be controlled precisely and efficiently.

公开(公告)号：US20050127383A1

公开(公告)日：2005-06-16

申请号：US10772294

申请日：2004-02-06

申请人： Takeshi Kikawa ,  Kouji Nakahara ,  Etsuko Nomoto

发明人： Takeshi Kikawa ,  Kouji Nakahara ,  Etsuko Nomoto

IPC分类号： B82Y20/00 ,  H01L21/00 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/10 ,  H01S5/12 ,  H01S5/223 ,  H01S5/227 ,  H01L33/00

CPC分类号： H01S5/0282 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01S5/0014 ,  H01S5/02216 ,  H01S5/02284 ,  H01S5/0683 ,  H01S5/1039 ,  H01S5/12 ,  H01S5/2231 ,  H01S5/227 ,  H01L2924/00014 ,  H01L2924/00

摘要： Laser diodes containing aluminum at high concentration in an active layer have been usually suffered from remarkable facet deterioration along with laser driving operation and it has been difficult for the laser diodes to attain high reliability. An aluminum oxide film lacking in oxygen is formed adjacent to the semiconductor on an optical resonator facet, by which facet deterioration can be minimized and, accordingly, the laser diode can be operated with no facet deterioration at high temperature for long time and a laser diode of high reliability can be manufactured at a reduced cost.

摘要翻译： 在激活层中含有高浓度的铝的激光二极管通常伴随着激光驱动操作而引起显着的面恶化，并且激光二极管难以获得高可靠性。 在光谐振器面上与半导体相邻形成缺氧的氧化铝膜，由此可以使面畸变最小化，因此激光二极管长时间可以在高温下没有小面恶化的情况下工作，而激光二极管 可以以较低的成本制造高可靠性。

公开(公告)号：US5399230A

公开(公告)日：1995-03-21

申请号：US72407

申请日：1993-06-07

申请人： Shinichiro Takatani ,  Takeshi Kikawa ,  Chushirou Kusano ,  Masatoshi Nakazawa

发明人： Shinichiro Takatani ,  Takeshi Kikawa ,  Chushirou Kusano ,  Masatoshi Nakazawa

IPC分类号： C23F4/00 ,  H01L21/285 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/331 ,  H01L21/335 ,  H01L23/14 ,  B44C1/22

CPC分类号： H01L29/66318 ,  H01L21/28587 ,  H01L21/30617 ,  H01L29/66462

摘要： A compound semiconductor is etched by a step of substituting a composite element of a compound semiconductor with other element, thereby forming a compound layer on the surface of the compound semiconductor and a step of removing the compound layer from the surface. Etching depth is controlled not by etching time, but by the number of runs (repetitions) of the etching step, and thus can be precisely controlled.

摘要翻译： 通过用化合物半导体的复合元件代替其它元件的步骤来蚀刻化合物半导体，从而在化合物半导体的表面上形成化合物层，以及从表面除去化合物层的步骤。 蚀刻深度不受蚀刻时间控制，而是通过蚀刻步骤的次数（重复）来控制，因此可以精确地控制。

公开(公告)号：US20070126119A1

公开(公告)日：2007-06-07

申请号：US11454832

申请日：2006-06-19

申请人： Ryu Washino ,  Takeshi Kikawa ,  Yasushi Sakuma ,  Kaoru Okamoto

发明人： Ryu Washino ,  Takeshi Kikawa ,  Yasushi Sakuma ,  Kaoru Okamoto

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01S5/028 ,  H01L24/02 ,  H01L33/16 ,  H01L2224/04042 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/014 ,  H01S5/0281 ,  H01S5/0283 ,  H01S5/0425 ,  H01S5/2027

摘要： An object of the present invention is to provide a semiconductor production technology capable of preventing the peeling of the electrode which occurs in die bonding or wire bonding. There is provided a semiconductor element having an electrode in a surface or in a rear face of a semiconductor substrate, the semiconductor element having a structure in which an amorphous silicon layer 106 is inserted in between an electrode 107 and a semiconductor substrate 101, wherein hydrogen is not added to the amorphous silicon layer 106. Furthermore, an amorphous silicon layer 104 is inserted also in the interface between an electrode 105 and an insulating layer 103, and in the interface between the insulating layer and the semiconductor substrate. Moreover, the present invention is equally applicable to a semiconductor laser having an insulating layer, which serves as a reflective layer, in an oscillating surface side of light, and insulating layers, which serve as a multilayer reflective layer, in a non-oscillating surface side.

摘要翻译： 本发明的目的是提供能够防止在芯片接合或引线接合中发生的电极的剥离的半导体制造技术。 提供了在半导体衬底的表面或背面具有电极的半导体元件，该半导体元件具有非晶硅层106插入在电极107和半导体衬底101之间的结构，其中氢 不添加到非晶硅层106。 此外，非晶硅层104也插入在电极105和绝缘层103之间的界面中，以及绝缘层和半导体衬底之间的界面中。 此外，本发明同样可应用于在非振荡表面中具有在光的振荡表面侧中用作反射层的绝缘层和用作多层反射层的绝缘层的半导体激光器 侧。

公开(公告)号：US20050287813A1

公开(公告)日：2005-12-29

申请号：US10929778

申请日：2004-08-31

申请人： Takeshi Kikawa ,  Hiroyuki Uchiyama ,  Takafumi Taniguchi

发明人： Takeshi Kikawa ,  Hiroyuki Uchiyama ,  Takafumi Taniguchi

IPC分类号： G03C5/00 ,  H01L21/00 ,  H01L21/02

CPC分类号： H01L21/02046 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207

摘要： An apparatus for decreasing plasma-induced damage caused by exposure to plasma is provided in an apparatus for manufacturing semiconductor devices using plasma. An apparatus is used for irradiating the semiconductor surface with as least one of X-rays and UV-rays in a vacuum or in an inert atmosphere after plasma processing.

摘要翻译： 在使用等离子体制造半导体器件的装置中提供了用于降低由暴露于等离子体引起的等离子体引起的损伤的装置。 在等离子体处理之后，使用在真空或惰性气氛中的X射线和紫外线中的至少一种照射半导体表面的装置。

公开(公告)号：US07668217B2

公开(公告)日：2010-02-23

申请号：US11882055

申请日：2007-07-30

申请人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Hitoshi Nakamura ,  Tsukuru Ohtoshi ,  Takeshi Kikawa ,  Sumiko Fujisaki ,  Shigehisa Tanaka

发明人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Hitoshi Nakamura ,  Tsukuru Ohtoshi ,  Takeshi Kikawa ,  Sumiko Fujisaki ,  Shigehisa Tanaka

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： H01S5/327 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/347 ,  H01S2301/173 ,  H01S2304/02

摘要： The present invention provides a Be-based group II-VI semiconductor laser using an InP substrate and having a stacked structure capable of continuous oscillation at a room temperature. A basic structure of a semiconductor laser is constituted by using a Be-containing lattice-matched II-VI semiconductor above an InP substrate. An active laser, an optical guide layer, and a cladding layer are constituted in a double hetero structure having a type I band line-up in order to enhance the injection efficiency of carriers to the active layer. Also, the active layer, the optical guide layer, and the cladding layer, which are capable of enhancing the optical confinement to the active layer, are constituted, and the cladding layer is constituted with bulk crystals.

摘要翻译： 本发明提供一种使用InP衬底并具有能够在室温下连续振荡的层叠结构的基于II族的II-VI族半导体激光器。 通过在InP衬底上使用含Be的晶格匹配的II-VI半导体构成半导体激光器的基本结构。 活性激光器，光导层和包覆层以具有I型带阵列的双异质结构构成，以提高载流子对活性层的注入效率。 此外，构成能够增强对有源层的光学限制的有源层，导光层和包层，并且包层由块状晶体构成。

公开(公告)号：US20100040103A1

公开(公告)日：2010-02-18

申请号：US12536210

申请日：2009-08-05

申请人： Katsumi Kishino ,  Ichiro Nomura ,  Koshi Tamamura ,  Kunihiko Tasai ,  Tsunenori Asatsuma ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

发明人： Katsumi Kishino ,  Ichiro Nomura ,  Koshi Tamamura ,  Kunihiko Tasai ,  Tsunenori Asatsuma ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

IPC分类号： H01S5/20

CPC分类号： H01S5/327 ,  H01S5/305 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3216

摘要： The present invention provides a semiconductor device including: a semiconductor layer including an n-type first cladding layer, an n-type second cladding layer, an active layer, a p-type first cladding layer, and a p-type second cladding layer in this order on an InP substrate. The n-type first cladding layer and the n-type second cladding layer satisfy formulas (1) to (4) below, or the p-type first cladding layer and the p-type second cladding layer satisfy formulas (5) to (8) below. 1×1017 cm−3≦N1≦1×1020 cm−3  (1) N1>N2  (2) D1>D2  (3) Ec1

摘要翻译： 本发明提供一种半导体器件，其包括：包括n型第一包层，n型第二包层，有源层，p型第一包层和p型第二包层的半导体层， 这个顺序在InP衬底上。 n型第一包层和n型第二包层满足下式（1）〜（4），p型第一包层和p型第二包层满足式（5）〜（8） ）。 1×1017cm-3＆nlE; N1＆nlE; 1×1020cm-3（1）N1> N2（2）D1> D2（3）Ec1

公开(公告)号：US06576503B2

公开(公告)日：2003-06-10

申请号：US09902778

申请日：2001-07-12

申请人： Takeshi Kikawa ,  Shigeo Goto

发明人： Takeshi Kikawa ,  Shigeo Goto

IPC分类号： H01C2144

CPC分类号： H01S5/028 ,  H01S5/0282

摘要： A laser diode having an optical cavity which is formed on top of a semiconductor substrate and has semiconductor crystals and an oxide layer that is substantially free from arsenic oxide. The oxide layer may be formed by using the matrix of the optical cavity as a matrix or a layer formed by the hydrogenation or oxygenation of the matrix of the cavity on at least one side of the optical cavity. The laser diode has a long operational life and high reliability without facet degradation.

公开(公告)号：US06455876B1

公开(公告)日：2002-09-24

申请号：US09931894

申请日：2001-08-20

申请人： Takeshi Kikawa ,  Shigeo Goto

发明人： Takeshi Kikawa ,  Shigeo Goto

IPC分类号： H01L3300

CPC分类号： H01S5/028

摘要： A semiconductor radiative device comprises a layered film comprised of a low-refraction first dielectric film and a high-refraction second dielectric film having a refraction index greater than that of the first dielectric film, and formed on at least one of facets of an optical cavity. The high-refraction second dielectric film is an amorphous dielectric film of nitrogen-doped hydrogenated silicon. The semiconductor radiative device is capable of stably operating in a high-output mode for a long period of time.

摘要翻译： 半导体辐射装置包括由低折射率第一介电膜和折射率大于第一介电膜的折射率的高折射率第二介电膜构成的层状膜，并形成在光腔的至少一个面上 。 高折射率第二电介质膜是氮掺杂氢化硅的非晶体介质膜。 半导体辐射装置能够长时间稳定地在高输出模式下工作。

公开(公告)号：US08050305B2

公开(公告)日：2011-11-01

申请号：US12132063

申请日：2008-06-03

申请人： Katsumi Kishino ,  Ichiro Nomura ,  Koshi Tamamura ,  Kunihiko Tasai ,  Tsunenori Asatsuma ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

发明人： Katsumi Kishino ,  Ichiro Nomura ,  Koshi Tamamura ,  Kunihiko Tasai ,  Tsunenori Asatsuma ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

IPC分类号： H01S5/347 ,  H01S5/327 ,  H01L31/0272 ,  H01L31/0296

CPC分类号： H01S5/347 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02485 ,  H01L21/02568 ,  H01L21/02579 ,  H01L33/28 ,  H01S5/3059

摘要： A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including Bex1Mgx2Znx3Te (0

摘要翻译： 提供了一种具有高可靠性，长寿命以及通过将新型材料应用于p型覆层的优异发光特性的半导体器件。 半导体器件包括在InP衬底上的p型半导体层，其中p型半导体层具有通过交替层叠主要包括Bex1Mgx2Znx3Te（0