公开(公告)号：US5838154A

公开(公告)日：1998-11-17

申请号：US615954

申请日：1996-03-14

申请人： Takeshi Morikawa ,  Yuji Nishibe ,  Hideya Yamadera ,  Yutaka Nonomura ,  Masaharu Takeuchi ,  Jiro Sakata

发明人： Takeshi Morikawa ,  Yuji Nishibe ,  Hideya Yamadera ,  Yutaka Nonomura ,  Masaharu Takeuchi ,  Jiro Sakata

IPC分类号： G01D5/20 ,  G01R33/02 ,  H01L43/00

CPC分类号： G01R33/02

摘要： A magnetic sensor element 1 includes a substrate 10, a conductive layer 12 of a conductive material, and a magnetic layer 11 of a magnetic material, which encloses the conductive layer 12. AC is applied to the element from a drive power source 50, and a detector 60 detects an impedance change due to an external magnetic field. The magnetic layer 11 is bestowed with magnetic anisotropy in a direction orthogonal to the direction of energization of the element 1. With the provision of the conductive layer 12 of conductive material and also with magnetic anisotropy imparted to the magnetic layer 1, the element 1 may be made a low resistivity element. A reactance change and a resistance change of the element due to an external magnetic field change, thus can be effectively detected in drive frequencies two orders of magnitude lower than in the case of a prior art magnetic sensor element. The magnetic anisotropy of the magnetic layer 11 is controlled to prevent magnetic field detection dynamic range variations with drive frequency.

摘要翻译： 磁传感器元件1包括衬底10，导电材料的导电层12和磁性材料的磁性层11，其包围导电层12.AC从驱动电源50施加到元件，并且 检测器60检测由外部磁场引起的阻抗变化。 磁性层11在与元件1的通电方向正交的方向上具有磁各向异性。通过提供导电材料的导电层12以及赋予磁性层1的磁各向异性，元件1可以 制成低电阻率元件。 由于外部磁场变化引起的元件的电抗变化和电阻变化，因此可以在比现有技术的磁性传感器元件的情况下低两个数量级的驱动频率中被有效地检测。 控制磁性层11的磁各向异性以防止磁场检测与驱动频率的动态范围变化。

公开(公告)号：US5001454A

公开(公告)日：1991-03-19

申请号：US404209

申请日：1989-09-07

申请人： Hideya Yamadera ,  Yoshiki Seno ,  Yasunori Taga ,  Katsuhiko Ariga ,  Tadashi Ozaki ,  Naoki Hara ,  Haruhiko Inoue

发明人： Hideya Yamadera ,  Yoshiki Seno ,  Yasunori Taga ,  Katsuhiko Ariga ,  Tadashi Ozaki ,  Naoki Hara ,  Haruhiko Inoue

IPC分类号： G01L1/22 ,  H01C10/10

CPC分类号： H01C10/10 ,  G01L1/2287

摘要： A thin film resistor for a strain gauge prepared by physical or chemical vapor deposition. The resistor contains 60 to 98 atomic % of chromium, 2 to 30 atomic % of oxygen, and 0 to 10 atomic % of a metal or semiconductor. These constituents are uniformly distributed. The thickness of the film is between 0.01 and 10 .mu.m. The metal is at least one of Al, Ti, Ta, Zr and In, and the semiconductor is at least one of silicon, germanium and boron. The thin film resistor has excellent resistance-strain characteristics and resistance-temperature characteristics, as well as high sensitivity and mechanical strength.

公开(公告)号：US5625218A

公开(公告)日：1997-04-29

申请号：US491543

申请日：1995-06-16

申请人： Hideya Yamadera ,  Takeshi Ohwaki ,  Yasunori Taga ,  Makio Iida ,  Makoto Ohkawa ,  Hirofumi Abe ,  Yoshihiko Isobe

发明人： Hideya Yamadera ,  Takeshi Ohwaki ,  Yasunori Taga ,  Makio Iida ,  Makoto Ohkawa ,  Hirofumi Abe ,  Yoshihiko Isobe

IPC分类号： H01L23/525 ,  H01L27/10 ,  H01L29/00

CPC分类号： H01L23/5256 ,  H01L2924/0002

摘要： A fuse fusible type semiconductor device capable of reducing energy required for fusing and a production method of the semiconductor device. In a semiconductor device equipped with a heat-fusible thin film resistor, the thin film resistor formed on a substrate 1 through an insulating film 2 is made of chromium, silicon and tungsten, and films 7 and 8 of a insulator including silicon laminated on the upper surface of the fusing surface, aluminum films 5 are disposed on both sides of the fusing surface and a barrier film 4. This semiconductor device is produced by a lamination step of sequentially forming a first insulating film 2, a thin film resistor 3, a barrier film 4 and an aluminum film 5 on a substrate 1 for reducing drastically fusing energy, an etching step of removing the barrier film 4 and the aluminum film 5 from the fusing region 31 of the thin film resistor 3, and an oxide film formation step of depositing the insulator including silicon films 7 and 8.

摘要翻译： 一种能够降低熔融所需的能量的熔断器熔断型半导体器件和半导体器件的制造方法。 在配备有热熔薄膜电阻器的半导体装置中，通过绝缘膜2形成在基板1上的薄膜电阻由铬，硅和钨制成，并且包含硅的绝缘体的膜7和8层压在 定影表面的上表面，铝膜5设置在定影表面的两侧和阻挡膜4上。该半导体器件通过层叠步骤制造，顺序形成第一绝缘膜2，薄膜电阻3， 阻挡膜4和铝膜5，用于降低显着熔化能的蚀刻步骤，从薄膜电阻器3的熔融区域31去除阻挡膜4和铝膜5的蚀刻步骤以及氧化膜形成步骤 沉积包括硅膜7和8的绝缘体。

公开(公告)号：US07417269B2

公开(公告)日：2008-08-26

申请号：US10717902

申请日：2003-11-21

申请人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

发明人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

IPC分类号： H01L27/148 ,  H01L29/768

CPC分类号： H01L27/22 ,  G01P3/487 ,  G01R33/02 ,  Y10T428/1193

摘要： A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

摘要翻译： 磁传感器装置包括半导体衬底和用于检测磁场的磁阻抗装置。 磁阻抗装置设置在基板上。 磁传感器装置具有最小尺寸并且制造成本低。 这里，磁阻抗装置以这样的方式检测磁场，使得当将交流电流施加到装置并且通过外部电路测量阻抗时，根据磁场改变装置的阻抗。

公开(公告)号：US20070108970A1

公开(公告)日：2007-05-17

申请号：US11650929

申请日：2007-01-09

申请人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

发明人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

IPC分类号： G01B7/30 ,  G01R33/02

CPC分类号： H01L27/22 ,  G01P3/487 ,  G01R33/02 ,  Y10T428/1193

摘要： A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

摘要翻译： 磁传感器装置包括半导体衬底和用于检测磁场的磁阻抗装置。 磁阻抗装置设置在基板上。 磁传感器装置具有最小尺寸并且制造成本低。 这里，磁阻抗装置以这样的方式检测磁场，使得当将交流电流施加到装置并且通过外部电路测量阻抗时，根据磁场改变装置的阻抗。

公开(公告)号：US07582489B2

公开(公告)日：2009-09-01

申请号：US12068988

申请日：2008-02-14

申请人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

发明人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

IPC分类号： H01L21/00 ,  G01B7/30

CPC分类号： H01L27/22 ,  G01P3/487 ,  G01R33/02 ,  Y10T428/1193

摘要： A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

摘要翻译： 磁传感器装置包括半导体衬底和用于检测磁场的磁阻抗装置。 磁阻抗装置设置在基板上。 磁传感器装置具有最小尺寸并且制造成本低。 这里，磁阻抗装置以这样的方式检测磁场，使得当将交流电流施加到装置并且通过外部电路测量阻抗时，根据磁场改变装置的阻抗。

公开(公告)号：US20080145956A1

公开(公告)日：2008-06-19

申请号：US12068988

申请日：2008-02-14

申请人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

发明人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

IPC分类号： H01L21/00

CPC分类号： H01L27/22 ,  G01P3/487 ,  G01R33/02 ,  Y10T428/1193

摘要： A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

摘要翻译： 磁传感器装置包括半导体衬底和用于检测磁场的磁阻抗装置。 磁阻抗装置设置在基板上。 磁传感器装置具有最小尺寸并且制造成本低。 这里，磁阻抗装置以这样的方式检测磁场，使得当将交流电流施加到装置并且通过外部电路测量阻抗时，根据磁场改变装置的阻抗。

公开(公告)号：US5008149A

公开(公告)日：1991-04-16

申请号：US274481

申请日：1988-11-22

申请人： Yasunori Taga ,  Hideya Yamadera ,  Keiji Aoki ,  Tadashi Hattori

发明人： Yasunori Taga ,  Hideya Yamadera ,  Keiji Aoki ,  Tadashi Hattori

IPC分类号： C23C14/02 ,  B32B15/04 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  C04B41/90 ,  C23C14/06 ,  C23C14/16 ,  C23C14/58

CPC分类号： C04B41/009 ,  B32B15/04 ,  C04B41/52 ,  C04B41/89 ,  Y10T428/265 ,  Y10T428/31678

摘要： A ceramic substrate and a metallic layer formed thereon are bonded closely by means of a bonding layer formed between the ceramic substrate and the metallic layer. The ceramic substrate comprises either alumina or a ceramic containing alumina, and the metallic layer comprises either molybdenum (Mo) or an alloy composed of molybdenum (Mo) and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb). The bonding layer comprises composite oxides of aluminum and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) and formed by either a process of (1) forming an intermediate layer comprising at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) between the ceramic substrate and the metallic layer, and subjecting the laminated substance to a heat treatment to a cause a reaction between alumina and the intermediate layer; or (2) forming an alloy layer comprising an alloy of molybdenum (Mo) and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) directly on the ceramic substrate, and subjecting the laminated substance to a heat treatment to cause a reaction between alumina and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) contained in the alloy layer.

摘要翻译： 陶瓷基板和形成在其上的金属层通过形成在陶瓷基板和金属层之间的接合层紧密地接合。 陶瓷基板包括氧化铝或含有氧化铝的陶瓷，金属层包括钼（Mo）或由钼（Mo）和钛（Ti），锆（Zr）和铌（Nb）中的至少一种组成的合金， 。 所述接合层包括铝的复合氧化物和钛（Ti），锆（Zr）和铌（Nb）中的至少一种，并且通过以下工艺形成：（1）形成包含钛（Ti） ，锆（Zr）和铌（Nb）在陶瓷基板和金属层之间，并对叠层物进行热处理以引起氧化铝和中间层之间的反应; 或（2）直接在陶瓷基板上形成包含钼（Mo）和钛（Ti），锆（Zr）和铌（Nb）中的至少一种的合金的合金层，并对层叠物进行热处理 引起氧化铝与合金层中所含的钛（Ti），锆（Zr）和铌（Nb）中的至少一种的反应。