摘要:
A method is disclosed with provides stable growth of SiC single crystals, particularly 4H—SiC single crystals, with an effective crystal growth rate for a prolonged time even at a low temperature range of 2000° C. or lower. A raw material containing Si, Ti and Ni is charged into a crucible made of graphite and heat-melted to obtain a solvent. At the same time, C is dissolved out from the crucible into the solvent to obtain a melt. A SiC seed crystal substrate is then brought into contact with the melt such that SiC is supersaturated in the melt in the vicinity of the surface of the SiC seed crystal substrate, thereby allowing growth and production of an SiC single crystal on the SiC seed crystal substrate.
摘要:
A steel sheet for containers that has excellent film adhesion qualities, and has; a chemical conversion coating formed by immersing or subjecting to electrolytic treatment a steel sheet in a solution containing Zr ions, F ions, with adhesion amount of 0.1 to 100 mg/m2 for metal Zr and no more than 0.1 mg/m2 for F; and a hydroxyl acid treatment layer formed on the chemical conversion coating, the layer having a C adhesion amount of 0.05 to 50 mg/m2.
摘要:
Provided are an apparatus for continuous electrolytic treatment of a steel sheet that is suitable for producing a surface-treated steel sheet and a method for producing the surface-treated steel sheet using the apparatus for continuous electrolytic treatment of a steel sheet. The apparatus includes N pairs of tabular electrodes having a length L and being arranged to respectively face two surfaces of a steel sheet. Each electrode includes n sections arranged in the longitudinal direction of the electrode and disposed on the surface of the electrode facing the steel sheet surface. Each section is constituted by a conductive portion including an electrode portion having a length T1 and a nonconductive portion made by making an electrode portion having a length T2 nonconductive, where n×N≧10, 0.96≧T2/(T1+T2)≧0.05, and 0.9≧T1/L≧0.1.
摘要:
A manufacturing method for steel sheets for containers produces steel sheets with excellent film adhesion qualities. In a method for manufacturing steel sheets upon which is formed a chemical conversion coating having a metal Zr content of 1-100 mg/m2 and F content of no more than 0.1 mg/m2, the chemical conversion coating is formed on the steel sheet by subjecting the steel sheet to immersion in or electrolytic treatment with a treatment solution containing Zr ions and F ions, and subsequently, the steel sheet upon which the chemical conversion coating has been formed is washed with water having a temperature of at least 80° C. and dried.
摘要翻译:用于容器的钢板的制造方法产生具有优异的膜粘附性质的钢板。 在其中形成金属Zr含量为1-100mg / m 2,F含量不大于0.1mg / m 2的化学转化涂层的钢板的制造方法中,化学转化涂层通过 用含有Zr离子和F离子的处理溶液浸渍或电解处理钢板,然后用温度至少为80℃的水洗涤形成有化学转化膜的钢板。 并干燥。
摘要:
Disclosed is a steel sheet for containers that maintains excellent corrosion resistance even when a surface treatment that replaces a chromate treatment has been conducted, and that has excellent film adhesion qualities and appearance. This steel plate for containers has, on at least one surface thereof, a chemical conversion coating including at least two coatings selected from a zirconium coating that contains zirconium and has a metal zirconium content of 0.1-9 mg/m2, a phosphate coating that contains phosphoric acid and has a phosphorous content of 0.1-8 mg/m2, and a phenolic resin coating that contains phenolic resin in an amount of 0.5-8 mg/m2 in terms of carbon, the percentage of the area of the surface of the chemical conversion coating layer having particles Of a prescribed size being 0.1-50%.
摘要翻译:公开了一种用于容器的钢板,即使进行了替代铬酸盐处理的表面处理,并且具有优异的膜粘附性和外观,其也具有优异的耐腐蚀性。 用于容器的钢板在其至少一个表面上具有包含至少两种选自包含锆并且具有0.1-9mg / m 2的金属锆含量的锆涂层的涂层的化学转化涂层,含有 磷酸,并且具有0.1-8mg / m 2的磷含量,以碳为单位含有0.5-8mg / m 2的酚醛树脂的酚醛树脂涂料,化学品表面积的百分比 具有规定尺寸的颗粒的转化涂层为0.1-50%。
摘要:
The deep cell (300) of the present invention is capable of accommodating two data cartridges (100) in a row. In addition, the deep cell (300) includes a regulating member (301) for regulating the storage of two data cartridges (100) and for regulating storage to just one data cartridge (100).
摘要:
A tinned steel sheet includes an Sn-containing plating layer disposed on at least one surface of a steel sheet and in which mass per unit area of Sn is 0.05 to 20 g/m2; a first chemical conversion coating disposed on the Sn-containing plating layer and contains P and Sn, and in which mass per unit area of P is 0.3 to 10 mg/m2; a second chemical conversion coating disposed on the first chemical conversion coating and contains P and Al, and in which mass per unit area of P is 1.2 to 10 mg/m2 and mass per unit area of Al is 0.24 to 8.7 mg/m2; and a silane coupling agent-treating layer formed with the silane coupling agent disposed on the second chemical conversion coating and has a mass per unit area of Si of 0.10 to 100 mg/m2.
摘要翻译:镀锡钢板包括设置在钢板的至少一个表面上的含Sn镀层,其中Sn的单位面积质量为0.05〜20g / m 2; 第一化学转化涂层,其设置在含Sn镀层上并含有P和Sn,其中每单位面积的P的质量为0.3〜10mg / m 2; 第二化学转化涂层,其设置在第一化学转化膜上并含有P和Al,其中P的单位面积质量为1.2〜10mg / m 2,Al的单位面积质量为0.24〜8.7mg / m 2; 以及硅烷偶联剂处理层,该硅烷偶联剂处理层由设置在第二化学转化膜上的硅烷偶联剂形成,Si的单位面积质量为0.10〜100mg / m 2。
摘要:
Provided is a method of removing a cartridge, that is to be removed, that is housed in a deep side of a cell and stuck on a wall surface of the cell without increasing the number of components. In order to remove the cartridge stuck on the wall surface of the cell, the method includes a pressing step and a releasing step. In the pressing step, a picker mechanism is abutted on a latch lever, and then moved so as to move the latch lever from an engaged position to a released position. This presses the latch lever to increase the urging force of the urging unit. In the releasing step, after the pressing step, the picker mechanism is moved away from the cell to release the urging force of the latch lever spring.
摘要:
There is provided a method for manufacturing a flexible semiconductor device. The manufacturing method of the flexible semiconductor device of the present invention comprising the steps of: forming a gate electrode; forming a gate insulating film so that the gate insulating film contacts with the gate electrode; forming a semiconductor layer on the gate insulating film such that the semiconductor layer is opposed to the gate electrode; forming source and drain electrodes so that the source and drain electrodes contact with the semiconductor layer; forming a flexible film layer so that the flexible film layer covers the semiconductor layer and the source and drain electrodes; forming vias in the flexible film layer; forming a first metal layer by disposing a metal foil onto the flexible film layer, and thereby a semiconductor device precursor is provided; and subjecting the first metal layer to a processing treatment to form a wiring from a part of the first metal layer, wherein, in the step of the processing treatment of the first metal layer, the wiring is formed in a predetermined position by using at least one of the vias as an alignment marker.
摘要:
Disclosed is a library device in which the space to enlarge the magazine can be secured to the rear side of the library device.The library device includes power supply means for supplying electricity to the library device, medium housing means which can house a plurality of computer-readable media, medium reading/writing means for reading/writing data from/to the medium, medium conveying means for conveying the medium between the medium housing means and the medium reading/writing means, control means for controlling operation of the library device and first connection means to which the power supply means and the control means can be electrically connected when these means are installed and from which the power supply means and the control means can be disconnected when these means are extracted. The power supply means, the first connection means, and the control means are disposed along any one of two sides of the library device, and one of the first connection means is disposed between the power supply means and the control means and whereby, the first connection means is connected to the power supply means and the control means.