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    Flexible semiconductor device and method for manufacturing same
    3.
    发明授权
    Flexible semiconductor device and method for manufacturing same 有权
    柔性半导体器件及其制造方法

    公开(公告)号：US08343822B2

    公开(公告)日：2013-01-01

    申请号：US12681445

    申请日：2009-07-30

    申请人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa ,  Takashi Ichiryu ,  Takeshi Suzuki

    发明人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa ,  Takashi Ichiryu ,  Takeshi Suzuki

    IPC分类号： H01L21/84 ,  H01L21/00

    CPC分类号： H01L29/78651 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1266 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/7869

    摘要： A method for manufacturing a flexible semiconductor device includes (i) forming an insulating film on the upper surface of metal foil, (ii) forming an extraction electrode pattern on the upper surface of the metal foil, (iii) forming a semiconductor layer on the insulating film such that the semiconductor layer is in contact with the extraction electrode pattern, (iv) forming a sealing resin layer on the upper surface of the metal foil such that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) forming electrodes by etching the metal foil, the metal foil being used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). The metal foil need not be stripped, and a high-temperature process can be used.

    摘要翻译： 一种制造柔性半导体器件的方法包括：（i）在金属箔的上表面上形成绝缘膜，（ii）在金属箔的上表面上形成引出电极图案，（iii）在金属箔的上表面上形成半导体层 绝缘膜，使得半导体层与引出电极图案接触，（iv）在金属箔的上表面上形成密封树脂层，使得密封树脂层覆盖半导体层和引出电极图案，和（ v）通过蚀刻金属箔形成电极，金属箔用作绝缘膜的支撑体，引出电极图案，半导体层和形成在（i）至（iv）中的密封树脂层，并用作 （v）中的电极的构成材料。 金属箔不需要剥离，可以使用高温工艺。

    FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    4.
    发明申请
    FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    柔性半导体器件及其制造方法

    公开(公告)号：US20100283054A1

    公开(公告)日：2010-11-11

    申请号：US12681445

    申请日：2009-07-30

    申请人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa ,  Takashi Ichiryu ,  Takeshi Suzuki

    发明人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa ,  Takashi Ichiryu ,  Takeshi Suzuki

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/78651 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1266 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/7869

    摘要： There is provided a method for manufacturing a flexible semiconductor device characterized by comprising (i) a step of forming an insulating film on the upper surface of metal foil, (ii) a step of forming an extraction electrode pattern on the upper surface of the metal foil, (iii) a step of forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the extraction electrode pattern, (iv) a step of forming a sealing resin layer on the upper surface of the metal foil in such a manner that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) a step of forming electrodes by etching the metal foil, wherein the metal foil is used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). A TFT element can be fabricated by a simple process because the metal foil serving as the support need not be finally stripped off. Further, a high-temperature process can be introduced to the fabrication of the insulating film and the semiconductor layer because the metal foil is used as the support, whereby the TFT characteristic is improved.

    摘要翻译： 提供了一种制造柔性半导体器件的方法，其特征在于包括：（i）在金属箔的上表面上形成绝缘膜的步骤，（ii）在金属的上表面上形成引出电极图案的步骤 箔，（iii）以半导体层与引出电极图案接触的方式在绝缘膜上形成半导体层的步骤，（iv）在所述绝缘膜的上表面上形成密封树脂层的步骤 金属箔以密封树脂层覆盖半导体层和引出电极图案，以及（v）通过蚀刻金属箔形成电极的步骤，其中金属箔用作绝缘膜的支撑体， （i）〜（iv）中形成的并用作（v）中的电极的构成材料的引出电极图案，半导体层和密封树脂层。 由于作为支撑体的金属箔不需要最终被剥离，所以可以通过简单的工艺制造TFT元件。 此外，由于使用金属箔作为支撑体，因此可以将绝缘膜和半导体层的制造引入高温处理，从而提高TFT特性。

    METHOD FOR MANUFACTURING FLEXIBLE SEMICONDUCTOR DEVICE
    5.
    发明申请
    METHOD FOR MANUFACTURING FLEXIBLE SEMICONDUCTOR DEVICE 有权
    制造柔性半导体器件的方法

    公开(公告)号：US20100261321A1

    公开(公告)日：2010-10-14

    申请号：US12681399

    申请日：2009-07-30

    申请人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa

    发明人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa

    IPC分类号： H01L21/336

    CPC分类号： H01L51/0541 ,  H01L51/0004 ,  H01L51/0022 ,  H01L51/0097 ,  H01L51/107 ,  Y02E10/549 ,  Y02P70/521

    摘要： There is provided a method for manufacturing a flexible semiconductor device. The manufacturing method is characterized by comprising (i) a step of forming an insulating film on the upper surface of a resin film, (ii) a step of forming a pattern of extraction electrodes on the upper surface of the resin film, (iii) a step of forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the pattern of extraction electrodes, and (iv) a step of forming a sealing resin layer on the upper surface of the resin film in such a manner that the sealing resin layer covers the semiconductor layer and the pattern of extraction electrodes, wherein at least one forming step among the above (i) to (iv) is carried out by a printing method. In the manufacturing method, various layers can be formed by a simple printing process without using a vacuum process, photolithography, or the like.

    摘要翻译： 提供了一种用于制造柔性半导体器件的方法。 （i）在树脂膜的上表面形成绝缘膜的工序，（ii）在树脂膜的上表面形成引出电极的图案的工序，（iii） 以使得半导体层与引出电极的图案接触的方式在绝缘膜上形成半导体层的步骤，以及（iv）在树脂膜的上表面上形成密封树脂层的步骤 密封树脂层覆盖半导体层和提取电极的图案的方式，其中上述（i）至（iv）中的至少一个形成步骤通过印刷方法进行。 在制造方法中，可以通过简单的印刷工艺形成各种层，而不使用真空工艺，光刻等。

    Method for manufacturing flexible semiconductor device
    6.
    发明授权
    Method for manufacturing flexible semiconductor device 有权
    柔性半导体器件的制造方法

    公开(公告)号：US08435842B2

    公开(公告)日：2013-05-07

    申请号：US12681399

    申请日：2009-07-30

    申请人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa

    发明人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa

    IPC分类号： H01L21/00

    CPC分类号： H01L51/0541 ,  H01L51/0004 ,  H01L51/0022 ,  H01L51/0097 ,  H01L51/107 ,  Y02E10/549 ,  Y02P70/521

    摘要： A method for manufacturing a flexible semiconductor device comprises (i) forming an insulating film on the upper surface of a resin film, (ii) forming a pattern of extraction electrodes on the upper surface of the resin film, (iii) forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the pattern of extraction electrodes, and (iv) forming a sealing resin layer on the upper surface of the resin film in such a manner that the sealing resin layer covers the semiconductor layer and the pattern of extraction electrodes, wherein at least one of the stepsof the above steps (i) to (iv) is carried out by a printing method. With this manufacturing method, various layers can be formed by a simple printing process without using a vacuum process, photolithography, or the like.

    摘要翻译： 一种制造柔性半导体器件的方法包括：（i）在树脂膜的上表面上形成绝缘膜，（ii）在树脂膜的上表面上形成提取电极的图案，（iii）形成半导体层 以使得半导体层与提取电极的图案接触的方式在绝缘膜上，以及（iv）在树脂膜的上表面上形成密封树脂层，使得密封树脂层覆盖 半导体层和提取电极的图案，其中通过印刷方法进行上述步骤（i）至（iv）中的步骤中的至少一个。 利用该制造方法，可以通过简单的印刷工艺形成各种层，而不使用真空工艺，光刻等。

    Connecting member of a circuit substrate and method of manufacturing multilayer circuit substrates by using the same
    9.
    发明授权
    Connecting member of a circuit substrate and method of manufacturing multilayer circuit substrates by using the same 失效
    电路基板的连接部件和使用该电路基板的多层电路基板的制造方法

    公开(公告)号：US6108903A

    公开(公告)日：2000-08-29

    申请号：US582930

    申请日：1996-01-04

    申请人： Seiichi Nakatani ,  Akihito Hatakeyama ,  Kouji Kawakita ,  Hiroshi Sogou ,  Tatsuo Ogawa ,  Tamao Kojima

    发明人： Seiichi Nakatani ,  Akihito Hatakeyama ,  Kouji Kawakita ,  Hiroshi Sogou ,  Tatsuo Ogawa ,  Tamao Kojima

    IPC分类号： H05K3/40 ,  H05K3/42 ,  H05K3/46 ,  H05K3/10 ,  H05K3/36

    CPC分类号： H05K3/462 ,  H01R12/523 ,  H05K3/4069 ,  H05K2201/0116 ,  H05K2201/0355 ,  H05K2201/09536 ,  H05K2201/10378 ,  H05K2203/0191 ,  H05K2203/1461 ,  H05K3/4623 ,  H05K3/4652 ,  Y10S428/901 ,  Y10T29/49126 ,  Y10T29/49155 ,  Y10T29/49165 ,  Y10T428/24273 ,  Y10T428/24322 ,  Y10T428/24917

    摘要： A connecting member of circuit substrates includes an organic porous base material provided with tackfree films on both sides, through-holes disposed at requested places which are filled with conductive resin compound up to the surface of the tackfree films. This structure enables inner-via-hole connection and can therefore attain a connecting member of circuit substrates and an electrical connector of high reliability and high quality. By using a connecting member of circuit substrates including the organic porous base material provided with tackfree films on both sides and through-holes disposed at requested places which are filled with conductive resin compound up to the surface of the tackfree films, it is possible to form a high-multilayer substrate easily from double sided boards or four-layer substrates which can be manufactured rather stably. In addition to that, since the conductive paste is filled up to the surface of the tackfree films, the conductive paste sticks out from the surface of the organic porous base material when the tackfree films are separated. As a result, the filled amount of the conductive substance increases after the lamination, and thus, the connection resistance is reduced considerably.

    摘要翻译： 电路基板的连接构件包括在两侧设置有无粘性薄膜的有机多孔基材，设置在要求位置的通孔，其填充有导电树脂组合物直到无粘膜的表面。 这种结构能够实现内通孔连接，从而可以获得电路基板的连接构件和高可靠性和高质量的电连接器。 通过使用包括在两侧设置有无粘膜的有机多孔基材的电路基板的连接构件，以及设置在填充有导电树脂组合物的所需位置的通孔，直到无粘膜的表面，可以形成 来自可以制造得相当稳定的双面板或四层基板的高多层基板。 除此之外，由于导电膏被填充到无粘性膜的表面，所以当无粘性膜分离时，导电糊从有机多孔基材的表面突出出来。 结果，在层压之后导电物质的填充量增加，因此连接电阻显着降低。