WELDING METHOD AND WELDING APPARATUS FOR AN IMPELLER
    1.
    发明申请
    WELDING METHOD AND WELDING APPARATUS FOR AN IMPELLER 有权
    一种叶轮的焊接方法和焊接装置

    公开(公告)号:US20090095719A1

    公开(公告)日:2009-04-16

    申请号:US12248271

    申请日:2008-10-09

    IPC分类号: F01D5/22 B23K26/00

    摘要: A welding method for an impeller having a plurality of blades, a disc and an exterior body including a shroud welded to the plurality of blades, comprising the steps of: a first step for forming a groove having a prescribed depth and a prescribed width toward one of the blades on a surface of the disc or the exterior body, which is opposite to a surface against the blade abuts, emitting laser light toward the bottom of the groove, and performing melt-through bead welding to bond the bottom of the groove to an end of the blade in such a way that a bead formed on the back of the disc or the shroud is curved with an inward depression; and a second step for performing overlaying welding after completion of the first step by supplying a filler metal to a molten zone while the bottom of the groove is scanned with the laser light.

    摘要翻译: 一种用于叶轮的焊接方法,所述叶轮具有多个叶片,盘和外部主体,所述叶片和外部主体包括焊接到所述多个叶片的罩体,包括以下步骤:第一步骤,用于形成具有规定深度和规定宽度的槽朝向一个 在与盘片相对的表面上的刀片表面上的刀片邻接,朝向凹槽的底部发射激光,并且进行熔透珠焊接以将槽的底部结合到 叶片的端部以这样的方式使得形成在盘或罩的背面上的胎圈以向内的凹陷弯曲; 以及第二步骤,通过在用激光扫描槽的底部的同时向熔融区域供应填充金属来完成第一步骤之后的覆盖焊接。

    PLASMA PROCESSING APPARATUS
    2.
    发明申请
    PLASMA PROCESSING APPARATUS 审中-公开
    等离子体加工设备

    公开(公告)号:US20080053958A1

    公开(公告)日:2008-03-06

    申请号:US11929688

    申请日:2007-10-30

    IPC分类号: C23F1/00

    摘要: A plasma processing apparatus for processing a specimen placed on a table disposed inside of a processing chamber by using plasmas formed in the processing chamber in which the table is disposed. A first member is placed in contact with the specimen and a second member is disposed below the first member. A temperature control device is disposed inside the table for controlling the temperature of the outer circumferential zone and the central zone of the table to first and second temperatures, respectively. A pressure control device is also provided for controlling pressure between the surface of the table and the specimen.

    摘要翻译: 一种等离子体处理装置,用于通过使用形成在处理室中的等离子体处理放置在处理室内的台面上的样本的等离子体处理装置。 第一构件与试样接触放置,第二构件设置在第一构件的下方。 温度控制装置设置在工作台内,用于分别控制工作台的外周区域和中心区域的温度到第一和第二温度。 还设置有用于控制工作台表面和试样之间的压力的压力控制装置。