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公开(公告)号：US07768001B2
公开(公告)日：2010-08-03
申请号：US12135423
申请日：2008-06-09
IPC分类号： H01L21/765 , H01L27/28
CPC分类号： H01L51/102 , H01L27/283 , H01L51/0005 , H01L51/0022 , H01L51/0059 , H01L51/0545
摘要： An off-current is reduced in an organic transistor, with which an organic transistor array is formed. A display apparatus is constructed using the organic transistor array. The organic transistor includes a substrate, a gate electrode, a separating electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer. The organic transistor has a region in which the separating electrode and the organic semiconductor layer are laminated. A power supply is connected to the separating electrode.
摘要翻译： 在形成有机晶体管阵列的有机晶体管中减少了截止电流。 使用有机晶体管阵列构造显示装置。 有机晶体管包括基板，栅电极，分离电极，栅极绝缘膜，源电极，漏电极和有机半导体层。 有机晶体管具有层叠分离电极和有机半导体层的区域。 电源连接到分离电极。
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公开(公告)号：US20090014715A1
公开(公告)日：2009-01-15
申请号：US12135423
申请日：2008-06-09
IPC分类号： H01L51/05
CPC分类号： H01L51/102 , H01L27/283 , H01L51/0005 , H01L51/0022 , H01L51/0059 , H01L51/0545
摘要： An off-current is reduced in an organic transistor, with which an organic transistor array is formed. A display apparatus is constructed using the organic transistor array. The organic transistor includes a substrate, a gate electrode, a separating electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer. The organic transistor has a region in which the separating electrode and the organic semiconductor layer are laminated. A power supply is connected to the separating electrode.
摘要翻译： 在形成有机晶体管阵列的有机晶体管中减少了截止电流。 使用有机晶体管阵列构造显示装置。 有机晶体管包括基板，栅电极，分离电极，栅极绝缘膜，源电极，漏电极和有机半导体层。 有机晶体管具有层叠分离电极和有机半导体层的区域。 电源连接到分离电极。
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公开(公告)号：US07999253B2
公开(公告)日：2011-08-16
申请号：US12067657
申请日：2007-07-19
申请人： Takumi Yamaga , Ikue Kawashima , Yoshikazu Akiyama
发明人： Takumi Yamaga , Ikue Kawashima , Yoshikazu Akiyama
IPC分类号： H01L51/00
CPC分类号： H01L51/105 , H01L27/283 , H01L51/0005 , H01L51/0545
摘要： An organic transistor is disclosed that has an organic semiconductor layer patterned with high resolution. The organic transistor includes a gate electrode, a gate insulting film, a source electrode, a drain electrode, and an organic semiconductor layer formed of an organic semiconductor material. The gate electrode, the gate insulting film, the source electrode, the drain electrode, and the organic semiconductor layer are formed on a substrate. At least one of the source electrode and the drain electrode has an opening.
摘要翻译： 公开了一种具有以高分辨率图案化的有机半导体层的有机晶体管。 有机晶体管包括栅电极，栅极绝缘膜，源电极，漏电极和由有机半导体材料形成的有机半导体层。 在基板上形成栅电极，栅极绝缘膜，源电极，漏电极和有机半导体层。 源电极和漏电极中的至少一个具有开口。
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公开(公告)号：US20090272966A1
公开(公告)日：2009-11-05
申请号：US12067657
申请日：2007-07-19
申请人： Takumi Yamaga , Ikue Kawashima , Yoshikazu Akiyama
发明人： Takumi Yamaga , Ikue Kawashima , Yoshikazu Akiyama
CPC分类号： H01L51/105 , H01L27/283 , H01L51/0005 , H01L51/0545
摘要： An organic transistor is disclosed that has an organic semiconductor layer patterned with high resolution. The organic transistor includes a gate electrode, a gate insulting film, a source electrode, a drain electrode, and an organic semiconductor layer formed of an organic semiconductor material. The gate electrode, the gate insulting film, the source electrode, the drain electrode, and the organic semiconductor layer are formed on a substrate. At least one of the source electrode and the drain electrode has an opening.
摘要翻译： 公开了一种具有以高分辨率图案化的有机半导体层的有机晶体管。 有机晶体管包括栅电极，栅极绝缘膜，源电极，漏电极和由有机半导体材料形成的有机半导体层。 在基板上形成栅电极，栅极绝缘膜，源电极，漏电极和有机半导体层。 源电极和漏电极中的至少一个具有开口。
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公开(公告)号：US20090189148A1
公开(公告)日：2009-07-30
申请号：US12067251
申请日：2006-09-28
CPC分类号： H01L51/0537 , H01L27/283 , H01L51/0035
摘要： A transistor element that a transistor using an organic semiconductor layer on a substrate, an insulating film between layers contacting the organic semiconductor layer and an upper electrode electrically contacting the transistor via a through hole provided in the insulating film between layers are layered, wherein the insulating film between layers comprises a mixture of organic materials and particles.
摘要翻译： 使用在基板上使用有机半导体层的晶体管，与有机半导体层接触的层之间的绝缘膜和通过设置在层之间的绝缘膜中的通孔与晶体管电接触的上电极的晶体管元件，其中绝缘 层之间的膜包括有机材料和颗粒的混合物。
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公开(公告)号：US20090050879A1
公开(公告)日：2009-02-26
申请号：US11914032
申请日：2006-05-09
申请人： Takumi Yamaga , Hidenori Tomono , Ikue Kawashima
发明人： Takumi Yamaga , Hidenori Tomono , Ikue Kawashima
IPC分类号： H01L51/05
CPC分类号： H01L51/102 , H01L27/3244 , H01L51/0012 , H01L51/0022 , H01L51/0037 , H01L51/0545
摘要： An organic thin film transistor is disclosed. The organic thin film transistor includes a substrate, a gate electrode , a gate insulating film , a source electrode on the gate insulating film, a drain electrode on the gate insulating film at an interval with the source electrode, and an organic semiconductor layer. The gate insulating film includes an electrode formation region having surface energy modified by energy deposition, one or more corners of the electrode formation region has an obtuse-angled shape, and the source electrode and/or the drain electrode is formed in the electrode formation region so as to have substantially the same corner shape as the electrode formation region having the obtuse-angled shaped corners.
摘要翻译： 公开了一种有机薄膜晶体管。 有机薄膜晶体管包括基板，栅极电极，栅极绝缘膜，栅极绝缘膜上的源电极，栅极绝缘膜上的与源极电极间隔的漏电极和有机半导体层。 栅绝缘膜包括具有通过能量沉积改性的表面能的电极形成区域，电极形成区域的一个或多个拐角具有钝角形状，并且源电极和/或漏电极形成在电极形成区域中 以具有与具有钝角形状的角部的电极形成区域基本相同的拐角形状。
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7.发明申请INFORMATION TERMINAL DEVICE, METHOD TO PROTECT HANDWRITTEN INFORMATION, AND DOCUMENT MANAGEMENT SYSTEM 审中-公开信息终端设备，保护手机信息的方法和文档管理系统公开(公告)号：US20140009420A1
公开(公告)日：2014-01-09
申请号：US13936411
申请日：2013-07-08
申请人： Mayuka ARAUMI , Ikue Kawashima
发明人： Mayuka ARAUMI , Ikue Kawashima
IPC分类号： G06F3/0354
CPC分类号： G06F3/03545 , G06F21/6245
摘要： In order to prevent confidential information inputted in handwriting from being divulged, an information terminal device has an input section to input information in handwriting on an entry screen which displays a designated form of a document, a judgment section judging whether or not an inputted positional coordinate is in a particular field of the designated form, and a control section controlling the entire information terminal device to display the information inputted in handwriting within the particular field in the particular field while the coordinate of the information inputted in handwriting is within the particular field, and to make the information inputted in handwriting displayed in the particular field unreadable when the coordinate of the information inputted in handwriting is outside of the particular field or when a predetermined time frame has elapsed since the last stroke in the particular field.
摘要翻译： 为了防止手写输入的秘密信息被泄漏，信息终端装置具有输入部件，用于在显示文档的指定形式的输入屏幕上输入手写信息，判断部分判断输入的位置坐标 在指定形式的特定领域中，以及控制部分，控制整个信息终端设备在手写输入的信息的坐标在特定字段内的情况下显示在特定字段中的特定字段内以手写输入的信息， 并且当在手写输入的信息的坐标在特定场之外或当从特定场中的最后一次行程起经过预定时间帧时，使在特定场地中显示的手写输入的信息不可读。
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公开(公告)号：US07663797B2
公开(公告)日：2010-02-16
申请号：US11856311
申请日：2007-09-17
CPC分类号： G02F1/163 , G02F1/15 , G02F1/1521 , G02F2203/34
摘要： Multicolor display elements are disclosed that are adapted to full color electric papers, which comprises a display electrode, counter electrode, electrolyte, and display layer, wherein the counter electrode is disposed oppositely to the display electrode, the electrolyte is filled into a space provided between the display electrode and the counter electrode, the display layer is disposed on the surface, which faces the counter electrode, of the display electrode, the display layer contains plural electrochromic compositions in a condition that the plural electrochromic compositions are separated into plural layers within the display layer or are mixed together within the display layer, and at least one of threshold voltage for coloring condition and threshold voltage for decoloring condition, or at least one of charge amount required for coloring into a sufficient color density and charge amount required for sufficiently decoloring, are substantially different each other between the plural electrochromic compositions.
摘要翻译： 公开了适用于全彩电纸的多色显示元件，其包括显示电极，对电极，电解质和显示层，其中对电极与显示电极相对设置，电解质填充在 显示电极和对电极，显示层设置在显示电极的面对对电极的表面上，显示层包含多个电致变色组合物，条件是多个电致变色组合物分离成多个电致变色组合物 显示层或在显示层内混合在一起，以及用于着色条件的着色条件和阈值电压的阈值电压中的至少一个，或用于着色成为充分消色所需的充分颜色密度和电荷量所需的电荷量中的至少一种 ，在p之间基本上彼此不同 油性电致变色组合物。
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公开(公告)号：US20060125911A1
公开(公告)日：2006-06-15
申请号：US11350584
申请日：2006-02-08
IPC分类号： B41J2/47
CPC分类号： C09K11/06 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , G03C1/73 , H05B33/14 , Y10S430/163
摘要： An image display medium that includes a photoconductive layer containing a photochromic compound and an electron accepting compound; and a substrate, in which the photochromic compound contains a fulgide compound, and the electron accepting compound contains a compound selected at least from: a) a phosphonic acid compound having analiphatic group containing 12 or more carbon atoms; b) an aliphatic carboxylic acid compound having an aliphatic group containing 12 or more carbon atoms; and c) a phenolic compound having an aliphatic group containing 12 or more carbon atoms, a process for forming an image using the medium, and a multicolor image-forming apparatus using the medium and suitable for the process.
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10.发明授权Semiconductor device and method of forming semiconductor device having non-uniformly doped well 失效半导体器件和形成具有不均匀掺杂阱的半导体器件的方法
公开(公告)号：US6150698A
公开(公告)日：2000-11-21
申请号：US005724
申请日：1998-01-13
申请人： Masaya Ohtsuka , Takeshi Nanjyo , Ikue Kawashima
发明人： Masaya Ohtsuka , Takeshi Nanjyo , Ikue Kawashima
IPC分类号： H01L21/336 , H01L29/10 , H01L29/78 , H01L29/76
CPC分类号： H01L29/6659 , H01L29/105 , H01L29/1083
摘要： A MOS field effect transistor device and fabrication method thereof are provided, which include a non-uniformly doped well region composed of (1) a first portion thereof which is contiguous to a source or drain region, and situated under a gate electrode, and has a first concentration of said first conductive type impurities, and (2) a second.sub.-- portion which has a second concentration higher than the first concentration of said first conductive type impurities. This structure of the field effect transistor has advantages such as, for example, suppressing short channel effects, increasing source or drain junction breakdown voltages and improving high frequency characteristics of the transistor.
摘要翻译： 提供一种MOS场效应晶体管器件及其制造方法，其包括由（1）其第一部分与源极或漏极区域邻接并位于栅电极下方的非均匀掺杂阱区，并且具有 所述第一导电型杂质的第一浓度，和（2）第二浓度高于所述第一导电型杂质的第一浓度的第二浓度。 场效应晶体管的这种结构具有例如抑制短沟道效应，增加源极或漏极结击穿电压以及改善晶体管的高频特性的优点。
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