公开(公告)号：US07566662B2

公开(公告)日：2009-07-28

申请号：US11733316

申请日：2007-04-10

申请人： Takuya Futase ,  Hideaki Tsugane ,  Mitsuo Kimoto ,  Hidenori Suzuki

发明人： Takuya Futase ,  Hideaki Tsugane ,  Mitsuo Kimoto ,  Hidenori Suzuki

IPC分类号： H01L21/306

CPC分类号： H01L21/67184 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  Y10S438/906

摘要： Provided is a method of manufacturing a semiconductor device. After a semiconductor wafer is placed over a wafer stage with which a dry cleaning chamber of a film forming apparatus is equipped, dry cleaning treatment is given over the surface of the semiconductor wafer with a reducing gas. Then, the semiconductor wafer is heat treated at a first temperature of from 100 to 150° C. by using a shower head kept at 180° C. The semiconductor wafer is then vacuum-transferred to a heat treatment chamber, wherein the semiconductor wafer is heat treated at a second temperature of from 150 to 400° C. A product remaining over the main surface of the semiconductor wafer is thus removed. The present invention makes it possible to manufacture a semiconductor device having improved reliability and production yield by reducing variations in the electrical properties of a nickel silicide layer.

摘要翻译： 提供一种制造半导体器件的方法。 在将半导体晶片放置在配备有成膜装置的干洗室的晶片台上之后，用还原气体在半导体晶片的表面上进行干洗处理。 然后，通过使用保持在180℃的喷淋头，在100〜150℃的第一温度下对半导体晶片进行热处理。然后将半导体晶片真空转移到热处理室，其中半导体晶片为 在150-400℃的第二温度下进行热处理。因此，去除了残留在半导体晶片的主表面上的产物。 本发明通过减少硅化镍层的电性能的变化，可以制造具有提高的可靠性和生产率的半导体器件。

公开(公告)号：US20070238321A1

公开(公告)日：2007-10-11

申请号：US11733316

申请日：2007-04-10

申请人： Takuya Futase ,  Hideaki Tsugane ,  Mitsuo Kimoto ,  Hidenori Suzuki

发明人： Takuya Futase ,  Hideaki Tsugane ,  Mitsuo Kimoto ,  Hidenori Suzuki

IPC分类号： B08B6/00

CPC分类号： H01L21/67184 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  Y10S438/906

摘要： Provided is a method of manufacturing a semiconductor device. After a semiconductor wafer is placed over a wafer stage with which a dry cleaning chamber of a film forming apparatus is equipped, dry cleaning treatment is given over the surface of the semiconductor wafer with a reducing gas. Then, the semiconductor wafer is heat treated at a first temperature of from 100 to 150° C. by using a shower head kept at 180° C. The semiconductor wafer is then vacuum-transferred to a heat treatment chamber, wherein the semiconductor wafer is heat treated at a second temperature of from 150 to 400° C. A product remaining over the main surface of the semiconductor wafer is thus removed. The present invention makes it possible to manufacture a semiconductor device having improved reliability and production yield by reducing variations in the electrical properties of a nickel silicide layer.

摘要翻译： 提供一种制造半导体器件的方法。 在将半导体晶片放置在配备有成膜装置的干洗室的晶片台上之后，用还原气体在半导体晶片的表面上进行干洗处理。 然后，通过使用保持在180℃的喷淋头，在100〜150℃的第一温度下对半导体晶片进行热处理。然后将半导体晶片真空转移到热处理室，其中半导体晶片为 在150-400℃的第二温度下进行热处理。因此，去除了残留在半导体晶片的主表面上的产物。 本发明通过减少硅化镍层的电性能的变化，可以制造具有提高的可靠性和生产率的半导体器件。

公开(公告)号：US06764945B2

公开(公告)日：2004-07-20

申请号：US09822318

申请日：2001-04-02

申请人： Hiroshi Ashihara ,  Tatsuyuki Saito ,  Uitsu Tanaka ,  Hidenori Suzuki ,  Hideaki Tsugane ,  Yasuko Yoshida ,  Ken Okutani

发明人： Hiroshi Ashihara ,  Tatsuyuki Saito ,  Uitsu Tanaka ,  Hidenori Suzuki ,  Hideaki Tsugane ,  Yasuko Yoshida ,  Ken Okutani

IPC分类号： H01L214763

CPC分类号： H01L21/2855 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76855 ,  H01L21/76877 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.

摘要翻译： 为了在金属化之间形成良好的接触并提高半导体集成电路器件的可靠性和产品产量，通过传统溅射在接触孔内部沉积第一溅射膜，在接触孔中形成插塞，沉积第二溅射 通过长溅射溅射第一溅射膜上的膜，通过CVD在第二溅射膜上沉积W膜，并从接触孔的外部除去第一和第二溅射膜和W膜。 可以通过从方向性不同的第一溅射膜和第二溅射膜构成阻挡膜来改善阻挡性。

公开(公告)号：US07088001B2

公开(公告)日：2006-08-08

申请号：US10844479

申请日：2004-05-13

申请人： Hiroshi Ashihara ,  Tatsuyuki Saito ,  Uitsu Tanaka ,  Hidenori Suzuki ,  Hideaki Tsugane ,  Yasuko Yoshida ,  Ken Okutani

发明人： Hiroshi Ashihara ,  Tatsuyuki Saito ,  Uitsu Tanaka ,  Hidenori Suzuki ,  Hideaki Tsugane ,  Yasuko Yoshida ,  Ken Okutani

IPC分类号： H01L23/48

CPC分类号： H01L21/2855 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76855 ,  H01L21/76877 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.

摘要翻译： 为了在金属化之间形成良好的接触并提高半导体集成电路器件的可靠性和产品产量，通过传统溅射在接触孔内部沉积第一溅射膜，在接触孔中形成插塞，沉积第二溅射 通过长溅射溅射第一溅射膜上的膜，通过CVD在第二溅射膜上沉积W膜，并从接触孔的外部除去第一和第二溅射膜和W膜。 可以通过从方向性不同的第一溅射膜和第二溅射膜构成阻挡膜来改善阻挡性。

公开(公告)号：US08901242B2

公开(公告)日：2014-12-02

申请号：US12678442

申请日：2009-04-08

申请人： Hidenori Suzuki ,  Masanori Uesugi ,  Makoto Kai ,  Mitsuyoshi Shirai

发明人： Hidenori Suzuki ,  Masanori Uesugi ,  Makoto Kai ,  Mitsuyoshi Shirai

IPC分类号： B32B27/00 ,  B32B27/40 ,  C03C25/10 ,  C08F2/50 ,  C08G18/08 ,  C08G18/28 ,  C08G73/10 ,  C08K5/34 ,  C08K5/48 ,  C08K5/3435 ,  C08L75/00 ,  C09J151/08 ,  C08G18/48 ,  C08G18/75 ,  C08L51/08 ,  C08F283/00

CPC分类号： C08G18/4854 ,  C08F283/006 ,  C08G18/757 ,  C08G2270/00 ,  C08L51/08 ,  C08L2666/02 ,  C09J151/08 ,  Y10T428/28 ,  Y10T428/31551

摘要： [Problem] To provide a composite film having light-curing property and weather resistance.[Means for solving] A composite film is one that comprises at least a urethane polymer, wherein both an initial b* value of the composite film measured by a spectrocolorimeter (value at an angle of 15 degrees) and a b* value after performing an accelerated weathering test for 120 hours (value at an angle of 15 degrees) are 4.0 or less, and a non-volatile component after heating the composite film at 130° C. for two hours is 96% or more.

摘要翻译： 提供具有光固化性和耐候性的复合膜。 [解决方案]复合膜是至少包含氨基甲酸酯聚合物的复合膜，其中通过分光色差计测量的复合膜的初始b *值（15度角）和执行加速后的ab *值 120小时的风化试验（15度的角度）为4.0以下，在130℃下加热复合膜2小时后的非挥发性成分为96％以上。

公开(公告)号：US08546542B2

公开(公告)日：2013-10-01

申请号：US12990775

申请日：2009-05-01

申请人： Michihiro Hide ,  Toshihiko Tanaka ,  Kaori Ishii ,  Hidenori Suzuki

发明人： Michihiro Hide ,  Toshihiko Tanaka ,  Kaori Ishii ,  Hidenori Suzuki

IPC分类号： C07K16/00 ,  A61K39/395 ,  C12N5/12

CPC分类号： C07K16/18 ,  C07K2317/54 ,  C07K2317/76 ,  G01N33/6854 ,  G01N2500/10 ,  G01N2800/24

摘要： The invention relates to an antibody that inhibits histamine releasing activity induced by an antigenic substance contained in sweat. The invention further relates to an antibody which can react with a sweat antigen composition and inhibit the histamine releasing activity of the composition on a sweat antigen stimulation-responsive cell.

摘要翻译： 本发明涉及抑制由汗液中所含的抗原物质诱导的组胺释放活性的抗体。 本发明还涉及可以与汗抗原组合物反应并且抑制组合物在汗抗原刺激响应细胞上释放活性的抗体。

公开(公告)号：US20130065011A1

公开(公告)日：2013-03-14

申请号：US13583820

申请日：2011-03-08

申请人： Hidenori Suzuki ,  Kouichi Mikurino

发明人： Hidenori Suzuki ,  Kouichi Mikurino

IPC分类号： B32B7/12 ,  B32B3/10

CPC分类号： H01L23/36 ,  H01L23/3737 ,  H01L23/433 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10T428/31569 ,  Y10T428/31587 ,  Y10T428/31598 ,  Y10T428/31601 ,  Y10T428/31605 ,  Y10T428/31612 ,  Y10T428/31641 ,  Y10T428/31649 ,  Y10T428/31663 ,  Y10T428/31667 ,  Y10T428/31699 ,  Y10T428/31707 ,  Y10T428/31826 ,  Y10T428/31913 ,  Y10T428/31935 ,  H01L2924/00

摘要： A heat insulation/heat dissipation sheet including a pressure-sensitive adhesive layer or a heat-conducting pressure-sensitive adhesive layer, a heat-conducting layer, a pressure-sensitive adhesive layer or a heat-insulating pressure-sensitive adhesive layer, a heat-insulating layer, and a pressure-sensitive adhesive layer or a heat-insulating pressure-sensitive adhesive layer laminated in order between the heat-generating component and the component to be protected, adjacent to the heat-generating component, for connecting the components. Further, an intra-device structure including the heat insulation/heat dissipation sheet with the pressure-sensitive adhesive layer on a heat-conducting layer side thereof adhered to a heat-generating component side and the pressure-sensitive adhesive layer on a heat-insulating layer side thereof adhered to a component to be protected.

摘要翻译： 包括粘合剂层或导热粘合剂层，导热层，压敏粘合剂层或绝热压敏粘合剂层的隔热/散热片，热 绝缘层，以及在发热部件和与发热部件相邻的被保护部件之间依次层叠的用于连接部件的压敏粘合剂层或绝热压敏粘合剂层。 此外，包括其导热层侧的粘合剂层的绝热/散热片与发热部件侧粘合的绝热散热片和在隔热层上的压敏粘合剂层的装置间结构 其一侧粘附到待保护的部件上。

公开(公告)号：US08338272B2

公开(公告)日：2012-12-25

申请号：US12480077

申请日：2009-06-08

申请人： Yuichi Harano ,  Hidenori Suzuki

发明人： Yuichi Harano ,  Hidenori Suzuki

IPC分类号： H01L21/326

CPC分类号： H01L21/6831

摘要： A wafer is mounted on the top surface of the stage having an electrostatic chuck function, and the wafer at 50° C. or more is cooled to a temperature lower than 50° C. In this step, the voltage to be applied to the internal electrode provided in the stage is raised stepwise to gradually increase the contact area between the back surface of the wafer and the top surface of the stage. Finally, a chuck voltage is applied to the internal electrode, so that the entire back surface of the wafer is uniformly attracted to the top surface of the stage. This reduces damage occurring in the top surface of the stage due to rubbing between the back surface of the wafer and the top surface of the stage.

摘要翻译： 将晶片安装在具有静电卡盘功能的平台的顶表面上，并且将在50℃或更高的晶片冷却至低于50℃的温度。在该步骤中，施加到内部的电压 设置在台架中的电极逐步升高以逐渐增加晶片的背表面和台的顶表面之间的接触面积。 最后，向内部电极施加卡盘电压，使得晶片的整个背面被均匀地吸引到台的顶面。 这减少了由于在晶片的后表面和台的顶表面之间的摩擦而在台的顶表面中发生的损坏。

公开(公告)号：US20120267879A1

公开(公告)日：2012-10-25

申请号：US13498027

申请日：2010-09-24

申请人： Minfun Kim ,  Yoshihiro Ohba ,  Hidenori Suzuki

发明人： Minfun Kim ,  Yoshihiro Ohba ,  Hidenori Suzuki

IPC分类号： B60R21/232

CPC分类号： B60R21/213 ,  B60R21/232 ,  B60R2021/161

摘要： A curtain airbag device capable of inflating and deploying without suffering a burst of a cushion part at an end of a cushion part protector near an inflator. The curtain airbag device includes a cushion part extending in a front to back direction of the vehicle, accommodated in a state rolled up from a lower end toward an upper end thereof, and inflating and deploying downward when gas is supplied thereto. The curtain airbag device includes an inflator for supplying gas to the cushion part from a predetermined position at the upper end of the cushion part, and an elongated protector 180 having an arc-like open curve cross section that is open downward and covering the cushion part, with an inner surface thereof making contact with the cushion part. The cross section of the protector being defined by the open curve, with an end point P of the open curve on a vehicle inner side smoothly going up at a first end near the inflator so that the open curve has an increasing distance between end points thereof.

摘要翻译： 一种帘式气囊装置，其能够在充气机附近的缓冲部件保护器的端部处不发生缓冲部件的膨胀而展开。 帘式安全气囊装置包括从车辆的前后方向延伸的缓冲部件，其容纳在从下端朝向其上端卷起的状态，并且当向其供应气体时向下膨胀展开。 帘式安全气囊装置包括用于从缓冲部件的上端的预定位置向缓冲部供应气体的充气机，以及具有向下敞开并覆盖缓冲部的弧形开口曲线横截面的细长保护器180 ，其内表面与缓冲部分接触。 保护器的横截面由开口曲线限定，车辆内侧上的开口曲线的终点P在充气机附近的第一端处平滑地向上升高，使得开口曲线在其端点之间具有增加的距离 。

公开(公告)号：US08127102B2

公开(公告)日：2012-02-28

申请号：US12112478

申请日：2008-04-30

申请人： Makoto Deguchi ,  Hidenori Suzuki

发明人： Makoto Deguchi ,  Hidenori Suzuki

IPC分类号： G06F12/00

CPC分类号： G06F3/065 ,  G06F3/0605 ,  G06F3/0665 ,  G06F3/067 ,  G06F11/1662

摘要： A storage system having a primary storage apparatus for storing data from a host computer in a primary logical volume, and a secondary storage apparatus connected to the primary storage apparatus, for providing a secondary logical volume for storing a copy of the data, the storage system comprising: a search unit for checking whether or not data exists in each primary slot area formed by partitioning a storage area in the primary logical volume into predetermined storage areas; a transmission unit for sending, if no data is held in the primary slot area, a notice indicating no data stored to the secondary storage apparatus; and a data write unit for writing, when the notice is received from the primary storage apparatus, zero data in the secondary slot area.