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    Nonvolatile semiconductor memory device
    1.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US08711635B2

    公开(公告)日：2014-04-29

    申请号：US13618537

    申请日：2012-09-14

    申请人： Takuya Futatsuyama ,  Toshiaki Edahiro ,  Norihiro Fujita ,  Fumitaka Arai ,  Tohru Maruyama ,  Masaki Kondo

    发明人： Takuya Futatsuyama ,  Toshiaki Edahiro ,  Norihiro Fujita ,  Fumitaka Arai ,  Tohru Maruyama ,  Masaki Kondo

    IPC分类号： G11C11/34

    CPC分类号： G11C16/3454 ,  G11C16/0483

    摘要： A nonvolatile semiconductor memory device includes a memory cell which stores data and which is capable of being rewritten electrically, a bit line which is connected electrically to one end of a current path of the memory cell, a control circuit which carries out a verify operation to check a write result after data is written to the memory cell, and a voltage setting circuit which sets a charging voltage for the bit line in a verify operation and a read operation and makes a charging voltage in a read operation higher than a charging voltage in a verify operation.

    摘要翻译： 非易失性半导体存储器件包括：存储单元，其存储数据并且能够被电气重写;电位地连接到存储单元的电流路径的一端的位线;控制电路，其执行验证操作 在将数据写入存储单元之后检查写入结果;以及电压设置电路，其在验证操作和读取操作中设置位线的充电电压，并使读取操作中的充电电压高于充电电压 验证操作。

    Nonvolatile semiconductor memory device
    3.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US08315104B2

    公开(公告)日：2012-11-20

    申请号：US12491638

    申请日：2009-06-25

    申请人： Takuya Futatsuyama ,  Toshiaki Edahiro ,  Norihiro Fujita ,  Fumitaka Arai ,  Tohru Maruyama ,  Masaki Kondo

    发明人： Takuya Futatsuyama ,  Toshiaki Edahiro ,  Norihiro Fujita ,  Fumitaka Arai ,  Tohru Maruyama ,  Masaki Kondo

    IPC分类号： G11C11/34

    CPC分类号： G11C16/3454 ,  G11C16/0483

    摘要： A nonvolatile semiconductor memory device includes a memory cell which stores data and which is capable of being rewritten electrically, a bit line which is connected electrically to one end of a current path of the memory cell, a control circuit which carries out a verify operation to check a write result after data is written to the memory cell, and a voltage setting circuit which sets a charging voltage for the bit line in a verify operation and a read operation and makes a charging voltage in a read operation higher than a charging voltage in a verify operation.

    摘要翻译： 非易失性半导体存储器件包括：存储单元，其存储数据并且能够被电气重写;电位地连接到存储单元的电流路径的一端的位线;控制电路，其执行验证操作 在将数据写入存储单元之后检查写入结果;以及电压设置电路，其在验证操作和读取操作中设置位线的充电电压，并使读取操作中的充电电压高于充电电压 验证操作。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    4.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
    非易失性半导体存储器件

    公开(公告)号：US20090323432A1

    公开(公告)日：2009-12-31

    申请号：US12491638

    申请日：2009-06-25

    申请人： Takuya Futatsuyama ,  Toshiaki Edahiro ,  Norihiro Fujita ,  Fumitaka Arai ,  Tohru Maruyama ,  Masaki Kondo

    发明人： Takuya Futatsuyama ,  Toshiaki Edahiro ,  Norihiro Fujita ,  Fumitaka Arai ,  Tohru Maruyama ,  Masaki Kondo

    IPC分类号： G11C16/06 ,  G11C5/14

    CPC分类号： G11C16/3454 ,  G11C16/0483

    摘要： A nonvolatile semiconductor memory device includes a memory cell which stores data and which is capable of being rewritten electrically, a bit line which is connected electrically to one end of a current path of the memory cell, a control circuit which carries out a verify operation to check a write result after data is written to the memory cell, and a voltage setting circuit which sets a charging voltage for the bit line in a verify operation and a read operation and makes a charging voltage in a read operation higher than a charging voltage in a verify operation.

    摘要翻译： 非易失性半导体存储器件包括：存储单元，其存储数据并且能够被电气重写;电位地连接到存储单元的电流路径的一端的位线;控制电路，其执行验证操作 在将数据写入存储单元之后检查写入结果;以及电压设置电路，其在验证操作和读取操作中设置位线的充电电压，并使读取操作中的充电电压高于充电电压 验证操作。

    Semiconductor memory device
    5.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US08829623B2

    公开(公告)日：2014-09-09

    申请号：US12248483

    申请日：2008-10-09

    申请人： Nobutoshi Aoki ,  Takashi Izumida ,  Masaki Kondo ,  Fumitaka Arai

    发明人： Nobutoshi Aoki ,  Takashi Izumida ,  Masaki Kondo ,  Fumitaka Arai

    IPC分类号： H01L27/088 ,  H01L27/115

    CPC分类号： H01L27/11529 ,  H01L27/11524 ,  H01L27/11526

    摘要： According to an aspect of the present invention, there is provided a semiconductor memory device including: a semiconductor substrate having: a contact region; a select gate region; and a memory cell region; a first element isolation region formed in the contact region and having a first depth; a second element isolation region formed in the select gate region and having a second depth; and a third element isolation region formed in the memory cell region and having a third depth which is smaller than the first depth.

    摘要翻译： 根据本发明的一个方面，提供了一种半导体存储器件，包括：半导体衬底，具有：接触区域; 选择栅极区; 和存储单元区域; 形成在所述接触区域中并且具有第一深度的第一元件隔离区; 形成在所述选择栅极区中并具有第二深度的第二元件隔离区; 以及形成在所述存储单元区域中并且具有小于所述第一深度的第三深度的第三元件隔离区域。

    SEMICONDUCTOR MEMORY DEVICE
    6.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权
    半导体存储器件

    公开(公告)号：US20090101960A1

    公开(公告)日：2009-04-23

    申请号：US12248483

    申请日：2008-10-09

    申请人： Nobutoshi AOKI ,  Takashi Izumida ,  Masaki Kondo ,  Fumitaka Arai

    发明人： Nobutoshi AOKI ,  Takashi Izumida ,  Masaki Kondo ,  Fumitaka Arai

    IPC分类号： H01L29/788 ,  H01L29/68

    CPC分类号： H01L27/11529 ,  H01L27/11524 ,  H01L27/11526

    摘要： According to an aspect of the present invention, there is provided a semiconductor memory device including: a semiconductor substrate having: a contact region; a select gate region; and a memory cell region; a first element isolation region formed in the contact region and having a first depth; a second element isolation region formed in the select gate region and having a second depth; and a third element isolation region formed in the memory cell region and having a third depth which is smaller than the first depth.

    摘要翻译： 根据本发明的一个方面，提供了一种半导体存储器件，包括：半导体衬底，具有：接触区域; 选择栅极区; 和存储单元区域; 形成在所述接触区域中并且具有第一深度的第一元件隔离区; 形成在所述选择栅极区中并具有第二深度的第二元件隔离区; 以及形成在所述存储单元区域中并且具有小于所述第一深度的第三深度的第三元件隔离区域。

    SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CELL UNIT AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CELL UNIT AND MANUFACTURING METHOD THEREOF 审中-公开
    具有存储单元的半导体存储器件及其制造方法

    公开(公告)号：US20080315280A1

    公开(公告)日：2008-12-25

    申请号：US12142274

    申请日：2008-06-19

    申请人： Shinichi WATANABE ,  Fumitaka Arai ,  Makoto Mizukami ,  Hirofumi Inoue ,  Masaki Kondo

    发明人： Shinichi WATANABE ,  Fumitaka Arai ,  Makoto Mizukami ,  Hirofumi Inoue ,  Masaki Kondo

    IPC分类号： H01L29/423 ,  H01L21/336

    CPC分类号： H01L27/115 ,  H01L27/11526 ,  H01L27/11529

    摘要： A semiconductor memory device includes a silicon substrate including a first region which has a buried insulating layer below a single-crystal silicon layer and a second region which does not have the buried insulating layer below the single-crystal silicon layer, at least one memory cell transistor which has a first gate electrode, the first gate electrode being provided on the single-crystal silicon layer in the first region, and at least one selective gate transistor which has a second gate electrode and is provided on the single-crystal silicon layer in the first region. The one selective gate transistor is provided in such a manner that a part of the second gate electrode is placed on the single-crystal silicon layer in the second region.

    摘要翻译： 一种半导体存储器件包括：硅衬底，其包括在单晶硅层下方具有掩埋绝缘层的第一区域和在单晶硅层下方不具有掩埋绝缘层的第二区域;至少一个存储单元 晶体管，其具有第一栅极电极，第一栅电极设置在第一区域中的单晶硅层上，以及至少一个选择栅极晶体管，其具有第二栅电极，并设置在单晶硅层上 第一个地区。 一个选择栅极晶体管被设置成使得第二栅电极的一部分被放置在第二区域中的单晶硅层上。

    Image processing apparatus
    8.
    发明授权
    Image processing apparatus 有权
    图像处理装置

    公开(公告)号：US08786894B2

    公开(公告)日：2014-07-22

    申请号：US13051032

    申请日：2011-03-18

    申请人： Masaki Kondo

    发明人： Masaki Kondo

    IPC分类号： G06K15/02 ,  G06K15/00 ,  H04N1/60 ,  H04N1/40 ,  H04N1/405 ,  H04N1/04

    CPC分类号： G06K15/1878 ,  G06K15/1871 ,  H04N1/58

    摘要： An image processing apparatus causes a printing executing section to perform a printing process using color-materials, the image processing apparatus includes: a first processing unit that performs a first image-processing by processing original image data in order to generate first processed image data; and a supplying unit, wherein the first processing unit includes: a calculating unit that calculates an index value relating an edge-intensity about a target pixel in object image data; and a correcting unit that corrects a value of the target pixel based on the index value of the edge-intensity, wherein the correcting unit corrects the value of the target pixel such that print-density of the target pixel increase if the target pixel is a first pixel, and wherein the correcting unit corrects the value of the target pixel such that print-density of the target pixel decrease if the target pixel is a second pixel.

    摘要翻译： 图像处理装置使打印执行部使用彩色材料进行打印处理，图像处理装置包括：第一处理单元，其通过处理原始图像数据进行第一图像处理，以生成第一处理图像数据; 以及供给单元，其中，所述第一处理单元包括：计算单元，计算与对象图像数据中的关于目标像素的边缘强度相关的指标值; 以及校正单元，其基于所述边缘强度的所述指标值来校正所述目标像素的值，其中，所述校正单元校正所述目标像素的值，使得所述目标像素的打印浓度增加，如果所述目标像素为 第一像素，并且其中，所述校正单元校正所述目标像素的值，使得如果所述目标像素是第二像素，则所述目标像素的打印浓度降低。

    Engine-driven cutter
    9.
    发明授权
    Engine-driven cutter 有权

    公开(公告)号：US08595944B2

    公开(公告)日：2013-12-03

    申请号：US13033956

    申请日：2011-02-24

    申请人： Masayoshi Okumi ,  Masaki Kondo ,  Tomonobu Nashimoto ,  Katsumi Tozawa

    发明人： Masayoshi Okumi ,  Masaki Kondo ,  Tomonobu Nashimoto ,  Katsumi Tozawa

    IPC分类号： B23D45/16 ,  B23Q11/06

    摘要： A handheld engine-driven cutter is provided with a disk blade and an engine that drives the disk blade, a filter through which air provided to the four-stroke engine passes, a carburetor that mixes fuel and the air that passed through the filter, a casing that houses the filter and the carburetor, at least one operation member that is operated by a user and connected to the carburetor via a link, and a shaft that is connected to the casing and supports the operation member in a swingable manner. A shaft receiving groove that supports the shaft is formed in the casing.