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32 条记录 (耗时 0.032 秒)

    APPARATUS AND METHOD FOR BAKING GLASS SUBSTRATE
    1.
    发明申请
    APPARATUS AND METHOD FOR BAKING GLASS SUBSTRATE 有权
    烘烤玻璃基材的装置及方法

    公开(公告)号：US20140007620A1

    公开(公告)日：2014-01-09

    申请号：US13641664

    申请日：2012-08-02

    申请人： Tao Ma ,  Tao Ding ,  Ming Liu ,  Tao Song ,  Guodong Zhao ,  Yijun Liu

    发明人： Tao Ma ,  Tao Ding ,  Ming Liu ,  Tao Song ,  Guodong Zhao ,  Yijun Liu

    IPC分类号： C03B32/00

    CPC分类号： C03B32/00 ,  C03C17/001 ,  C03C17/32 ,  C03C2218/31

    摘要： The present invention discloses an apparatus for baking a glass substrate, which includes: a baking oven, a support component, a temperature sensing device, a heating device, a cooling device, and a temperature controlling device. The present invention further discloses a method for baking a glass substrate. The present invention is capable of dynamically controlling the temperature of the support component, which contacts the glass substrate. The temperature of the glass substrate keeps identical and the temperature of the support component keep identical, so as to prevent a Mura defect appearing on the glass substrate.

    摘要翻译： 本发明公开了一种玻璃基板的烘烤装置，其特征在于，包括：烘烤炉，支撑部件，温度检测装置，加热装置，冷却装置以及温度控制装置。 本发明还公开了一种烘烤玻璃基板的方法。 本发明能够动态地控制与玻璃基板接触的支撑部件的温度。 玻璃基板的温度保持相同，并且支撑部件的温度保持相同，从而防止出现在玻璃基板上的Mura缺陷。

    Apparatus and method for baking glass substrate
    2.
    发明授权
    Apparatus and method for baking glass substrate 有权
    用于烘烤玻璃基板的装置和方法

    公开(公告)号：US09206065B2

    公开(公告)日：2015-12-08

    申请号：US13641664

    申请日：2012-08-02

    申请人： Tao Ma ,  Tao Ding ,  Ming Liu ,  Tao Song ,  Guodong Zhao ,  Yijun Liu

    发明人： Tao Ma ,  Tao Ding ,  Ming Liu ,  Tao Song ,  Guodong Zhao ,  Yijun Liu

    IPC分类号： C03B25/00 ,  C03B29/00 ,  C03B32/00 ,  C03C17/00 ,  C03C17/32

    CPC分类号： C03B32/00 ,  C03C17/001 ,  C03C17/32 ,  C03C2218/31

    摘要： The present invention discloses an apparatus for baking a glass substrate, which includes: a baking oven, a support component, a temperature sensing device, a heating device, a cooling device, and a temperature controlling device. The present invention further discloses a method for baking a glass substrate. The present invention is capable of dynamically controlling the temperature of the support component, which contacts the glass substrate. The temperature of the glass substrate keeps identical and the temperature of the support component keep identical, so as to prevent a Mura defect appearing on the glass substrate.

    摘要翻译： 本发明公开了一种玻璃基板的烘烤装置，其特征在于，包括：烘烤炉，支撑部件，温度检测装置，加热装置，冷却装置以及温度控制装置。 本发明还公开了一种烘烤玻璃基板的方法。 本发明能够动态地控制与玻璃基板接触的支撑部件的温度。 玻璃基板的温度保持相同，并且支撑部件的温度保持相同，从而防止出现在玻璃基板上的Mura缺陷。

    Managing make-up gas composition variation for a high pressure expander process
    3.
    发明授权
    Managing make-up gas composition variation for a high pressure expander process 有权

    公开(公告)号：US11555651B2

    公开(公告)日：2023-01-17

    申请号：US16526441

    申请日：2019-07-30

    申请人： Yijun Liu ,  Fritz Pierre, Jr.

    发明人： Yijun Liu ,  Fritz Pierre, Jr.

    IPC分类号： F25J1/02 ,  F25J1/00

    摘要： A method for liquefying a feed gas stream. A refrigerant stream is cooled and expanded to produce an expanded, cooled refrigerant stream. Part or all of the expanded, cooled refrigerant stream is mixed with a make-up refrigerant stream in a separator, thereby condensing heavy hydrocarbon components from the make-up refrigerant stream and forming a gaseous expanded, cooled refrigerant stream. The gaseous expanded, cooled refrigerant stream passes through a heat exchanger zone to form a warm refrigerant stream. The feed gas stream is passed through the heat exchanger zone to cool at least part of the feed gas stream by indirect heat exchange with the expanded, cooled refrigerant stream, thereby forming a liquefied gas stream. The warm refrigerant stream is compressed to produce the compressed refrigerant stream.

    Multi-station plasma reactor with multiple plasma regions
    8.
    发明授权
    Multi-station plasma reactor with multiple plasma regions 有权
    具有多个等离子体区域的多工位等离子体反应器

    公开(公告)号：US08336488B2

    公开(公告)日：2012-12-25

    申请号：US11961718

    申请日：2007-12-20

    申请人： Aihua Chen ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

    发明人： Aihua Chen ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

    IPC分类号： C23C16/505

    CPC分类号： C23C16/54 ,  C23C16/36 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862

    摘要： A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

    摘要翻译： 等离子体室被构造成具有在其中限定多个处理站的室主体。 多个旋转基板保持器各自位于一个处理站中，并且多个原位等离子体产生区域分别设置在一个基板保持器的上方。 多个准远程等离子体产生区域分别设置在相应的原位等离子体产生区域的上方并与相应的原位等离子体产生区域气态连通。 RF能量源耦合到准远程等离子体产生区域中的每一个。

    INTERACTIVE PROCESSING METHOD AND APPARATUS BETWEEN CONTENT-ID MANAGEMENT SERVERS
    9.
    发明申请
    INTERACTIVE PROCESSING METHOD AND APPARATUS BETWEEN CONTENT-ID MANAGEMENT SERVERS 审中-公开
    内容管理服务器之间的交互处理方法和设备

    公开(公告)号：US20110264767A1

    公开(公告)日：2011-10-27

    申请号：US13168752

    申请日：2011-06-24

    申请人： Yijun Liu ,  Hongtao Gao

    发明人： Yijun Liu ,  Hongtao Gao

    IPC分类号： G06F15/16

    CPC分类号： G06F21/10

    摘要： An interactive processing method and an apparatus between Content-ID management servers are provided. The method includes: after receiving a content identification request from a content management entity (CME), sending, by a local Content-ID management server (CIM), a request to a center CIM to inquire index data corresponding to a content feature value of a content requested to be identified if registration data of the content requested to be identified is not found in the local CIM; receiving an inquiry result returned by the center CIM, and if the inquiry result carries an ID of a remote register home CIM, requesting, by the local CIM, attribute metadata of the content requested to be identified from a corresponding register home CIM according to the ID of the remote register home CIM.

    摘要翻译： 提供了Content-ID管理服务器之间的交互处理方法和装置。 该方法包括：在从内容管理实体（CME）接收到内容标识请求之后，由本地Content-ID管理服务器（CIM）向中心CIM发送请求，查询与内容特征值对应的索引数据 如果在本地CIM中没有找到要求识别的内容的注册数据，则请求确定内容; 接收由中心CIM返回的查询结果，并且如果查询结果携带远程登记家庭CIM的ID，则由本地CIM根据相应的寄存器归属CIM请求被识别的内容的属性元数据 远程寄存器的ID为CIM。

    Methods to obtain low k dielectric barrier with superior etch resistivity
    10.
    发明授权
    Methods to obtain low k dielectric barrier with superior etch resistivity 有权
    获得具有优异蚀刻电阻率的低k电介质阻挡层的方法

    公开(公告)号：US07964442B2

    公开(公告)日：2011-06-21

    申请号：US11869416

    申请日：2007-10-09

    申请人： Huiwen Xu ,  Yijun Liu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

    发明人： Huiwen Xu ,  Yijun Liu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

    IPC分类号： H01L51/40

    CPC分类号： H01L21/02205 ,  C23C16/22 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/3185

    摘要： The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film.

    摘要翻译： 本发明通常提供一种形成具有降低的介电常数，改进的蚀刻电阻率和良好的阻挡性能的介电阻挡层的方法。 一个实施例提供了一种用于处理半导体衬底的方法，包括将前体流入处理室，其中前体包含硅 - 碳键和碳 - 碳键，并在处理室中产生前体的低密度等离子体以形成电介质 在半导体衬底上具有碳 - 碳键的阻挡膜，其中前体中的至少一部分碳 - 碳键保存在低密度等离子体中并且并入介电阻挡膜中。