-
公开(公告)号:US4581628A
公开(公告)日:1986-04-08
申请号:US424370
申请日:1982-09-27
申请人: Tateoki Miyauchi , Mikio Hongo , Masao Mitani , Isao Tanabe , Toshiaki Masuhara
发明人: Tateoki Miyauchi , Mikio Hongo , Masao Mitani , Isao Tanabe , Toshiaki Masuhara
IPC分类号: H01L21/3205 , H01L21/00 , H01L21/82 , H01L23/52 , H01L23/525 , H01L23/552 , H01L27/10 , H01L23/48 , H01L29/04
CPC分类号: H01L21/82 , H01L23/525 , H01L23/5254 , H01L23/552 , H01L2924/0002
摘要: The present invention consists in a semiconductor integrated circuit device characterized in that a circuit programming wiring layer is formed on an insulating film which is provided on a semiconductor substrate, and that a light shielding protective mask material is deposited around the circuit programming wiring layer except a program part thereof, through an insulating film.
摘要翻译: 本发明是一种半导体集成电路器件,其特征在于,在设置在半导体衬底上的绝缘膜上形成电路编程布线层,并且在电路编程布线层周围沉积遮光保护掩模材料,除了 程序部分,通过绝缘膜。
-
公开(公告)号:US4463073A
公开(公告)日:1984-07-31
申请号:US394642
申请日:1982-07-01
申请人: Tateoki Miyauchi , Katsuro Mizukoshi , Mikio Hongo , Masao Mitani , Masaaki Okunaka , Takao Kawanabe , Isao Tanabe
发明人: Tateoki Miyauchi , Katsuro Mizukoshi , Mikio Hongo , Masao Mitani , Masaaki Okunaka , Takao Kawanabe , Isao Tanabe
IPC分类号: G03F1/00 , G03F1/72 , H01L21/027 , H01L21/30 , G03F9/00
CPC分类号: G03F1/72 , H01L21/30 , Y10S430/139 , Y10S430/146
摘要: A method and apparatus for repairing defect portions of a photomask. A complex material from which a light shading material can be deposited is applied over the photomask. A white (blank) defect region is irradiated with a continuous wave laser light beam projected in a slit-like light image to thereby convert the complex material into the shading material. After washing, a half-deposited portion formed in a peripheral portion of the light shading region is further deposited by a post-baking process. Those portions of the light shading film which depart from the desired mask pattern are removed together with black (solid) defect portion originally present in the photomask through irradiation with a pulse laser light beam. The pulse laser is constituted by a Dye-laser, while the continuous wave laser is constituted by an Ar-laser. A specific half-mirror which transmits therethrough Ar-laser light while reflecting Dye-laser light is displaceable provided. The white and the black defects are selectively centered on a same optical axis of an optical projection system including a slit and a condenser lens, whereby the white and the black defect portions are each removed through irradiation with the associated laser light projected thereto in a slit-like light image through the same optical projection system.
摘要翻译: 一种用于修复光掩模的缺陷部分的方法和装置。 将光阴影材料沉积的复合材料施加在光掩模上。 用投影在狭缝状光图像中的连续波激光束照射白色(空白)缺陷区域,从而将复合材料转换成遮光材料。 洗涤后,通过后烘烤处理进一步沉积形成在遮光区域的周边部分中的半沉积部分。 通过照射脉冲激光,与原来存在于光掩模中的黑色(实心)缺陷部分一起除去遮光膜的偏离所需掩模图案的那些部分。 脉冲激光由染料激光器构成,而连续波激光由Ar激光器构成。 通过反射染料激光而透过其的Ar激光的特定半反射镜是可置换的。 白色和黑色缺陷选择性地集中在包括狭缝和聚光透镜的光学投影系统的相同光轴上,由此白色和黑色缺陷部分通过照射投射到狭缝中的相关激光而被去除 类似的光图像通过相同的光学投影系统。
-
公开(公告)号:US4402931A
公开(公告)日:1983-09-06
申请号:US383332
申请日:1982-05-28
申请人: Isao Tanabe , Ryoichi Nagata , Toru Watanabe , Nobuaki Miyamoto
发明人: Isao Tanabe , Ryoichi Nagata , Toru Watanabe , Nobuaki Miyamoto
CPC分类号: C01G45/02 , H01M4/50 , C01P2004/03 , C01P2004/61 , C01P2006/10 , C01P2006/11 , C01P2006/12 , C01P2006/82
摘要: Manganese dioxide having high bulk density, high tap density and high activity for use in batteries can be obtained by decomposing an aqueous solution of ammonia complex of manganese at a temperature of 68.degree. C. or higher than roasting the resulting manganese carbonate in an atmosphere of oxygen and 15-85% of steam at a temperature of 275.degree. to 375.degree. C.
摘要翻译: 可以通过在68℃或更高的温度下分解锰的氨络合物的水溶液,在所得的碳酸锰的气氛中,分解得到的碳酸锰的气氛中,可以获得具有高堆积密度,高振实密度和高活性的二氧化锰 氧气和15-85%的蒸汽在275°至375℃的温度下
-
-