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18 条记录 (耗时 0.025 秒)

    PHOTORESIST COMPOSITION
    1.
    发明申请
    PHOTORESIST COMPOSITION 有权
    光电组合物

    公开(公告)号：US20110065040A1

    公开(公告)日：2011-03-17

    申请号：US12880852

    申请日：2010-09-13

    申请人： Tatsuro MASUYAMA ,  Mitsuhiro Hata

    发明人： Tatsuro MASUYAMA ,  Mitsuhiro Hata

    IPC分类号： G03F7/004 ,  C07C271/22 ,  C07D207/16 ,  G03F7/20

    CPC分类号： C07C271/22 ,  C07D207/16 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20

    摘要： The present invention provides a photoresist composition comprising a resin, an acid generator and a compound represented by the formula (I): wherein R1 represents a C2-C12 alkyl group which can have one or more hydroxyl groups, etc., R2 and R3 each independently represent a hydrogen atom, etc., R4, R5 and R6 each independently represent a hydrogen atom, etc., A1 represents a single bond or a C1-C2 alkylene group in which one or more —CH2— can be replaced by —O—.

    摘要翻译： 本发明提供一种光致抗蚀剂组合物，其包含树脂，酸产生剂和由式（I）表示的化合物：其中R1表示可具有一个或多个羟基的C 2 -C 12烷基等，R 2和R 3各自 独立地表示氢原子等，R4，R5和R6各自独立地表示氢原子等，A1表示单键或C1-C2亚烷基，其中一个或多个-CH2-可以被-O - 。

    PHOTORESIST COMPOSITION
    2.
    发明申请
    PHOTORESIST COMPOSITION 审中-公开
    光电组合物

    公开(公告)号：US20110065047A1

    公开(公告)日：2011-03-17

    申请号：US12880750

    申请日：2010-09-13

    申请人： Tatsuro MASUYAMA ,  Mitsuhiro HATA

    发明人： Tatsuro MASUYAMA ,  Mitsuhiro HATA

    IPC分类号： G03F7/004 ,  G03F7/20 ,  C07C271/22 ,  C07C69/76

    CPC分类号： C07C271/22 ,  G03F7/0397

    摘要： The present invention provides a photoresist composition comprising a resin, an acid generator and a compound represented by the formula (I): wherein R1, R2 and R3 each independently represent a hydrogen atom or a C1-C4 alkyl group, A1 represents a single bond or a C1-C2 alkylene group, R4 and R5 each independently represent a hydrogen atom or a C1-C2 alkyl group, R6 and R7 each independently represent a hydrogen atom etc.

    摘要翻译： 本发明提供一种光致抗蚀剂组合物，其包含树脂，酸产生剂和由式（I）表示的化合物：其中R1，R2和R3各自独立地表示氢原子或C1-C4烷基，A1表示单键 或C1-C2亚烷基，R4和R5各自独立地表示氢原子或C1-C2烷基，R6和R7各自独立地表示氢原子等。

    SALT, PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN
    3.
    发明申请
    SALT, PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN 有权
    盐，光电组合物和生产光电子图案的方法

    公开(公告)号：US20130040237A1

    公开(公告)日：2013-02-14

    申请号：US13569787

    申请日：2012-08-08

    申请人： Tatsuro MASUYAMA ,  Yuichi MUKAI

    发明人： Tatsuro MASUYAMA ,  Yuichi MUKAI

    IPC分类号： C07C69/675 ,  G03F7/20 ,  G03F7/004

    CPC分类号： C07C381/12 ,  C07C309/08 ,  C07C309/17 ,  C07C2603/74 ,  G03F7/0045 ,  G03F7/20

    摘要： A photoresist composition which comprises a salt represented by formula (I): wherein Q1 and Q2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, R1, R2 and R3 each independently represent a hydrogen atom or a C1-C10 monovalent aliphatic saturated hydrocarbon group, X1 and X2 each independently represent a single bond, a carbonyl group, or a C1-C10 divalent aliphatic saturated hydrocarbon group where a hydrogen atom can be replaced by a hydroxy group and where a methylene group can be replaced by an oxygen atom, a sulfonyl group or a carbonyl group, A1 represents a C1-C30 organic group, m1 represents an integer of 1 to 4, and Z+ represents an organic cation, and a resin which is hardly soluble or insoluble but soluble in an aqueous alkali solution by action of an acid.

    摘要翻译： 一种光致抗蚀剂组合物，其包含式（I）表示的盐：其中Q1和Q2各自独立地表示氟原子或C1-C6全氟烷基，R1，R2和R3各自独立地表示氢原子或C1-C10一价脂族 饱和烃基，X 1和X 2各自独立地表示单键，羰基或C 1 -C 10二价脂族饱和烃基，其中氢原子可以被羟基代替，并且其中亚甲基可被氧代替 原子，磺酰基或羰基，A1表示C1-C30有机基团，m1表示1〜4的整数，Z +表示有机阳离子，难溶于或不溶而溶于碱水溶液的树脂 溶液通过酸的作用。

    RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
    4.
    发明申请
    RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN 有权
    耐蚀组合物及其制造方法

    公开(公告)号：US20130022921A1

    公开(公告)日：2013-01-24

    申请号：US13552242

    申请日：2012-07-18

    申请人： Koji ICHIKAWA ,  Tatsuro MASUYAMA ,  Satoshi YAMAGUCHI

    发明人： Koji ICHIKAWA ,  Tatsuro MASUYAMA ,  Satoshi YAMAGUCHI

    IPC分类号： G03F7/027 ,  G03F7/20

    CPC分类号： G03F7/0046 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/2041

    摘要： A resist composition having; a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), an acid generator, and a salt having an anion represented by the formula (IA). wherein R1, A1, A13, X12, A14, R1A and R2A are defined in the specification.

    摘要翻译： 一种抗蚀剂组合物，具有： 具有由式（I）表示的结构单元的树脂，树脂在碱性水溶液中不溶或难溶，但是通过酸的作用而溶解在碱性水溶液中，不包括由式 （I），酸产生剂和具有由式（IA）表示的阴离子的盐。 其中R1，A1，A13，X12，A14，R1A和R2A在说明书中定义。

    PHOTORESIST COMPOSITION
    7.
    发明申请
    PHOTORESIST COMPOSITION 有权
    光电组合物

    公开(公告)号：US20110091807A1

    公开(公告)日：2011-04-21

    申请号：US12903146

    申请日：2010-10-12

    申请人： Tatsuro MASUYAMA ,  Kazuhiko HASHIMOTO ,  Junji SHIGEMATSU

    发明人： Tatsuro MASUYAMA ,  Kazuhiko HASHIMOTO ,  Junji SHIGEMATSU

    IPC分类号： G03F7/004 ,  C07C69/527 ,  G03F7/20 ,  C07C69/34 ,  C07C309/70 ,  C08F120/34

    CPC分类号： C08F120/34 ,  C07C251/66 ,  C07C309/70 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041

    摘要： The present invention provides a photoresist composition comprising a polymer comprising a structural unit derived from a compound represented by the formula (I): wherein R1 represents a hydrogen atom or a methyl group, R2 represents a C6-C12 aromatic hydrocarbon group which can have one or more substituents, R3 represents a cyano group or a C1-C12 hydrocarbon group which can have one or more substituents and which can contain one or more heteroatoms, A1 represents a single bond, —(CH2)g—CO—O—* or —(CH2)h—O—CO—(CH2)i—CO—O—* wherein g, h and i each independently represent an integer of −1 to 6 and * represents a binding position to the nitrogen atom, a resin having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid, and an acid generator.

    摘要翻译： 本发明提供一种光致抗蚀剂组合物，其包含含有衍生自由式（I）表示的化合物的结构单元的聚合物：其中R 1表示氢原子或甲基，R 2表示可以具有1个的C 6 -C 12芳族烃基 或更多取代基，R 3表示可以具有一个或多个取代基并且可以含有一个或多个杂原子的氰基或C 1 -C 12烃基，A 1表示单键， - （CH 2）g -CO-O- *或 - （CH 2）h -O-CO-（CH 2）i-CO-O- *其中g，h和i各自独立地表示-1至6的整数，*表示与氮原子的结合位置， 酸不稳定基团，并且在碱性水溶液中不溶或难溶，但是通过酸和酸产生剂可溶于碱水溶液中。

    SULFONIUM COMPOUND
    8.
    发明申请
    SULFONIUM COMPOUND 有权
    磺化合物

    公开(公告)号：US20100248135A1

    公开(公告)日：2010-09-30

    申请号：US12729550

    申请日：2010-03-23

    申请人： Tatsuro MASUYAMA ,  Junji Shigematsu ,  Hanwoo Park

    发明人： Tatsuro MASUYAMA ,  Junji Shigematsu ,  Hanwoo Park

    IPC分类号： G03F7/004 ,  C07C69/003 ,  C07C67/00

    CPC分类号： C07C381/12 ,  C07C309/17 ,  C07C2602/42 ,  C07C2603/74 ,  G03F7/0045 ,  G03F7/0046 ,  Y10S430/122 ,  Y10S430/123

    摘要： The present invention provides a sulfonium compound represented by the formula (I): wherein Q1 and Q2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, R1 represents a C5-C42 organic group having a β-ketoester structure and A+ represents an organic counter ion, and a chemically amplified photoresist composition comprising the above-mentioned sulfonium compound and a resin comprising a structural unit having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid.

    摘要翻译： 本发明提供由式（I）表示的锍化合物：其中Q1和Q2各自独立地表示氟原子或C1-C6全氟烷基，R1表示具有β-酮基结构的C 5 -C 42有机基团和A + 代表有机抗衡离子，以及包含上述锍化合物的化学放大光致抗蚀剂组合物和包含具有酸不稳定基团的结构单元的树脂，其在碱性水溶液中不溶或难溶，但变得可溶于碱水溶液 溶液通过酸的作用。

    PHOTORESIST COMPOSITION
    9.
    发明申请
    PHOTORESIST COMPOSITION 有权
    光电组合物

    公开(公告)号：US20110200935A1

    公开(公告)日：2011-08-18

    申请号：US13025876

    申请日：2011-02-11

    申请人： Tatsuro MASUYAMA ,  Satoshi YAMAGUCHI

    发明人： Tatsuro MASUYAMA ,  Satoshi YAMAGUCHI

    IPC分类号： G03F7/004 ,  G03F7/20 ,  C07C307/02 ,  C07D215/58 ,  C07D295/26 ,  C07D211/96 ,  C07D409/02

    CPC分类号： C07C381/12 ,  C07D211/96 ,  C07D215/58 ,  C07D295/26 ,  C07D409/02 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/2041

    摘要： The present invention provides a photoresist composition having a sulfonium salt comprising an anion represented by the formula (IA): wherein R1 and R2 independently represent a hydrogen atom, a C1-C12 aliphatic hydrocarbon group, a C3-C20 saturated cyclic hydrocarbon group, a C6-C20 aromatic hydrocarbon group or a C7-C21 aralkyl group, and the aliphatic hydrocarbon group, the saturated cyclic hydrocarbon group, the aromatic hydrocarbon group and the aralkyl group can have one or more substituents selected from the group consisting of a hydroxyl group, a cyano group, a fluorine atom, a trifluoromethyl group and a nitro group, and one or more —CH2— in the aliphatic hydrocarbon group can be replaced by —O— or —CO—, or R1 and R2 are bonded each other to form a C4-C20 nitrogen-containing ring together with the nitrogen atom to which they are bonded, an acrylic resin having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid, and an acid generator.

    摘要翻译： 本发明提供具有锍盐的光致抗蚀剂组合物，其包含由式（IA）表示的阴离子：其中R1和R2独立地表示氢原子，C1-C12脂族烃基，C3-C20饱和环状烃基， C6-C20芳族烃基或C7-C21芳烷基，脂族烃基，饱和环烃基，芳香族烃基和芳烷基可以具有一个以上的选自羟基， 氰基，氟原子，三氟甲基和硝基，脂族烃基中的一个或多个-CH 2 - 可以被-O-或-CO-代替，或者R 1和R 2彼此键合形成 与它们所键合的氮原子一起形成的C4-C20含氮环，具有酸不稳定基团的丙烯酸树脂，不溶于或难溶于碱水溶液，但变成solu 通过酸的作用和酸产生剂在碱性水溶液中浸渍。