公开(公告)号：US07807956B2

公开(公告)日：2010-10-05

申请号：US12254470

申请日：2008-10-20

申请人： Tatsuya Iwasaki ,  Koki Tamakawa ,  Isao Yamamoto

发明人： Tatsuya Iwasaki ,  Koki Tamakawa ,  Isao Yamamoto

IPC分类号： H01J40/14

CPC分类号： G01J1/44 ,  G01R19/0092

摘要： A current detection circuit detects photoelectric current that flows through a phototransistor, and outputs a current, which is proportional to the photoelectric current, via an output terminal. An input-side transistor is a PNP bipolar transistor, and is provided on a current path for the phototransistor. Output-side transistors are PNP bipolar transistors. The base terminals thereof are connected to that of the input-side transistor so as to form a common base terminal, and the emitter terminals thereof are connected to that of the input-side transistor so as to form a common emitter terminal, thereby forming a current mirror circuit. Each of first switches is provided between the collector of the corresponding output-side transistor and an output terminal. Each of second switches is provided between the collector of the corresponding output-side transistor and the ground terminal. A control unit controls the ON/OFF operations of the first switches and the second switches.

摘要翻译： 电流检测电路检测流过光电晶体管的光电流，并通过输出端输出与光电流成比例的电流。 输入侧晶体管是PNP双极晶体管，并且设置在用于光电晶体管的电流路径上。 输出侧晶体管是PNP双极晶体管。 其基极连接到输入侧晶体管的基极以形成公共基极，并且其发射极端子连接到输入侧晶体管的发射极端子，以形成公共发射极端子，从而形成 电流镜电路。 每个第一开关设置在相应的输出侧晶体管的集电极和输出端之间。 每个第二开关设置在相应的输出侧晶体管的集电极和接地端子之间。 控制单元控制第一开关和第二开关的ON / OFF操作。

公开(公告)号：US08237415B2

公开(公告)日：2012-08-07

申请号：US12255742

申请日：2008-10-22

申请人： Tatsuya Iwasaki ,  Isao Yamamoto

发明人： Tatsuya Iwasaki ,  Isao Yamamoto

IPC分类号： H02J7/00 ,  H02M7/5383 ,  H05B41/16

CPC分类号： H02M3/33523 ,  G01R19/0084

摘要： An output voltage monitoring circuit monitors an output voltage of a capacitor charging circuit. A first sample-and-hold circuit samples and holds a voltage of a connection point of a primary coil of a transformer and a switching transistor. A first monitoring comparator compares output of the first sample-and-hold circuit with a predetermined first reference voltage. When the output of the first sample-and-hold circuit exceeds the first reference voltage, a signal processor executes predetermined signal processing. The first sample-and-hold circuit starts a sampling period after a predetermined first time has elapsed after the switching transistor is turned OFF. When a voltage drop across a detection resistor reaches a third reference voltage, the first sample-and-hold circuit ends the sampling period.

摘要翻译： 输出电压监视电路监视电容器充电电路的输出电压。 第一采样保持电路对变压器的初级线圈和开关晶体管的连接点的电压进行采样并保持。 第一监视比较器将第一采样保持电路的输出与预定的第一参考电压进行比较。 当第一采样保持电路的输出超过第一参考电压时，信号处理器执行预定的信号处理。 第一采样保持电路在开关晶体管截止之后经过预定的第一时间之后开始采样周期。 当检测电阻上的电压降达到第三参考电压时，第一个采样和保持电路结束采样周期。

公开(公告)号：US20090102435A1

公开(公告)日：2009-04-23

申请号：US12255742

申请日：2008-10-22

申请人： Tatsuya Iwasaki ,  Isao Yamamoto

发明人： Tatsuya Iwasaki ,  Isao Yamamoto

IPC分类号： H02J7/00

CPC分类号： H02M3/33523 ,  G01R19/0084

摘要： An output voltage monitoring circuit monitors an output voltage of a capacitor charging circuit. A first sample-and-hold circuit samples and holds a voltage of a connection point of a primary coil of a transformer and a switching transistor. A first monitoring comparator compares output of the first sample-and-hold circuit with a predetermined first reference voltage. When the output of the first sample-and-hold circuit exceeds the first reference voltage, a signal processor executes predetermined signal processing. The first sample-and-hold circuit starts a sampling period after a predetermined first time has elapsed after the switching transistor is turned OFF. When a voltage drop across a detection resistor reaches a third reference voltage, the first sample-and-hold circuit ends the sampling period.

摘要翻译： 输出电压监视电路监视电容器充电电路的输出电压。 第一采样保持电路对变压器的初级线圈和开关晶体管的连接点的电压进行采样并保持。 第一监视比较器将第一采样保持电路的输出与预定的第一参考电压进行比较。 当第一采样保持电路的输出超过第一参考电压时，信号处理器执行预定的信号处理。 第一采样保持电路在开关晶体管截止之后经过预定的第一时间之后开始采样周期。 当检测电阻上的电压降达到第三参考电压时，第一个采样和保持电路结束采样周期。

公开(公告)号：US08716711B2

公开(公告)日：2014-05-06

申请号：US13012125

申请日：2011-01-24

申请人： Tatsuya Iwasaki

发明人： Tatsuya Iwasaki

IPC分类号： H01L29/04

CPC分类号： H01L29/7869

摘要： A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.

摘要翻译： 一种薄膜晶体管，包括由对可见光透明且具有折射率nx的氧化物半导体形成的沟道层，设置在沟道层的一个面上的栅极绝缘层和设置在另一个面上的透明层 的沟道层，折射率为nt，其中nx> nt的关系。 一种薄膜晶体管，包括折射率为no的衬底，设置在衬底上的折射率为nt的透明层，以及设置在透明层上并且折射率为nx的沟道层，其中存在 nx> nt> no的关系。

公开(公告)号：US20130214854A1

公开(公告)日：2013-08-22

申请号：US13881266

申请日：2011-10-31

申请人： Katsumi Abe ,  Hideya Kumomi ,  Ryo Hayashi ,  Tatsuya Iwasaki

发明人： Katsumi Abe ,  Hideya Kumomi ,  Ryo Hayashi ,  Tatsuya Iwasaki

IPC分类号： H01L29/786 ,  G05F3/02

CPC分类号： H01L29/7869 ,  G05F3/02 ,  H01L27/0705 ,  H01L27/11807 ,  H01L27/1203 ,  H03K17/063 ,  H03K17/693 ,  H03K19/20

摘要： Provided is a semiconductor device, including an electrode, a first insulator, a first semiconductor having a bandgap of 2 eV or greater, a second insulator, and a second semiconductor, which are stacked on one another, and at least further including one or more electrodes in contact with the first semiconductor and two or more electrodes in contact with the second semiconductor.

摘要翻译： 提供了一种半导体器件，其包括彼此堆叠的电极，第一绝缘体，具有2eV以上的带隙的第一半导体，第二绝缘体和第二半导体，并且至少进一步包括一个或多个 与第一半导体接触的电极和与第二半导体接触的两个或多个电极。

公开(公告)号：US07888684B2

公开(公告)日：2011-02-15

申请号：US12162924

申请日：2007-03-15

申请人： Tomoyuki Oike ,  Tatsuya Iwasaki ,  Toru Den

发明人： Tomoyuki Oike ,  Tatsuya Iwasaki ,  Toru Den

IPC分类号： H01L31/0256 ,  H01L33/00

CPC分类号： H01L33/285 ,  H01L33/0087 ,  H01L33/26

摘要： There has not been a DC drive type light emitting device capable of providing high brightness. The present invention provides a light emitting device, including: a pair of electrodes; a light emitter placed between the electrodes; and a semiconductor laminated to be adjacent to the light emitter, in which the semiconductor contains one of a chalcopyrite and an oxychalcogenide.

摘要翻译： 还没有能够提供高亮度的DC驱动型发光装置。 本发明提供一种发光器件，包括：一对电极; 位于电极之间的发光体; 以及与发光体相邻的半导体层叠体，其中半导体含有黄铜矿和氧化硫化物之一。

公开(公告)号：US07829444B2

公开(公告)日：2010-11-09

申请号：US11269641

申请日：2005-11-09

申请人： Hisato Yabuta ,  Masafumi Sano ,  Tatsuya Iwasaki ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Hisato Yabuta ,  Masafumi Sano ,  Tatsuya Iwasaki ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L21/20

CPC分类号： H01L29/78618 ,  H01L29/66969 ,  H01L29/78693

摘要： Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.

摘要翻译： 提供一种用于制造场效应晶体管的新颖方法。 在基板上形成无定形氧化物层之前，在臭氧气氛中将紫外线照射到基板表面上，将等离子体照射到基板表面上，或者通过含有过氧化氢的化学溶液清洁基板表面。

公开(公告)号：US20100279462A1

公开(公告)日：2010-11-04

申请号：US12833850

申请日：2010-07-09

申请人： Tatsuya Iwasaki

发明人： Tatsuya Iwasaki

IPC分类号： H01L21/34 ,  C23C14/34 ,  H01L21/363

CPC分类号： H01L29/78693 ,  H01L29/66969 ,  Y10T29/41

摘要： An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.

摘要翻译： 含有氢（或氘）的无定形氧化物被施加到晶体管的沟道层。 因此，可以实现具有优异TFT特性的薄膜晶体管，具有小滞后，常关断操作，高ON / OFF比，高饱和电流等优异的TFT特性。 此外，作为制造由非晶氧化物制成的沟道层的方法，在含有氢气和氧气的气氛中进行成膜，可以控制非晶氧化物的载流子浓度。

公开(公告)号：US20100276689A1

公开(公告)日：2010-11-04

申请号：US12833855

申请日：2010-07-09

申请人： Tatsuya Iwasaki

发明人： Tatsuya Iwasaki

IPC分类号： H01L29/227

CPC分类号： H01L29/78693 ,  H01L29/66969 ,  Y10T29/41

摘要： An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.

公开(公告)号：US20100221420A1

公开(公告)日：2010-09-02

申请号：US12779648

申请日：2010-05-13

申请人： Tomoyuki Oike ,  Tatsuya Iwasaki

发明人： Tomoyuki Oike ,  Tatsuya Iwasaki

IPC分类号： B05D5/06

CPC分类号： C23C16/306 ,  C09K11/584 ,  C23C14/0629 ,  C23C14/5806 ,  C23C16/56

摘要： A phosphor film high in efficiency and less in luminescence irregularity and a method of producing the phosphor film are provided. The phosphor film includes a zinc sulfide compound containing an additive element(s). The additive element is at least one element selected from the group consisting of Ag, Cu and Au; the concentration of the additive element is 0.2 mol % or more and 5 mol % or less with respect to Zn; and the film thickness of the phosphor film is 10 nm or more and 2 um or less.

摘要翻译： 提供了效率高，发光不均匀性低的荧光体膜以及荧光体膜的制造方法。 荧光体膜包括含有添加元素的硫化锌化合物。 添加元素是选自Ag，Cu和Au中的至少一种元素; 相对于Zn，添加元素的浓度为0.2摩尔％以上且5摩尔％以下。 荧光体膜的膜厚为10nm以上且2μm以下。