Semiconductor device
    1.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US06642607B2

    公开(公告)日:2003-11-04

    申请号:US10061365

    申请日:2002-02-04

    IPC分类号: H01L2993

    摘要: A variable capacitor includes an N+ layer including a variable capacitance region, a P+ layer epitaxially grown on the N+ layer and formed from a SiGe film and a Si film, and a P-type electrode. An NPN-HBT (Hetero-junction Bipolar Transistor) includes a collector diffusion layer formed simultaneously with the N+ layer of the variable capacitor, a collector layer, and a Si/SiGe layer epitaxially grown simultaneously with the P+ layer of the variable capacitor. Since a depletion layer formed in a PN junction of the variable capacitor can extend entirely across the N+ layer, reduction in variation range of the capacitance can be suppressed.

    摘要翻译: 可变电容器包括N +层,包括可变电容区,在N +层上外延生长并由SiGe膜和Si膜形成的P +层和P型电极。 NPN-HBT(异质结双极晶体管)包括与可变电容器的N +层同时形成的集电极扩散层,集电极层和与P +层同时外延生长的Si / SiGe层 的可变电容器。 由于形成在可变电容器的PN结中的耗尽层可以完全延伸穿过N +层,所以可以抑制电容的变化范围的减小。

    Method of manufacturing a semiconductor device comprising a bipolar transistor and a variable capacitor
    2.
    发明授权
    Method of manufacturing a semiconductor device comprising a bipolar transistor and a variable capacitor 失效
    制造包括双极晶体管和可变电容器的半导体器件的方法

    公开(公告)号:US06800532B2

    公开(公告)日:2004-10-05

    申请号:US10620613

    申请日:2003-07-17

    IPC分类号: H01L218222

    摘要: A variable capacitor includes an N+ layer including a variable capacitance region, a P+ layer epitaxially grown on the N+ layer and formed from a SiGe film and a Si film, and a P-type electrode. An NPN-HBT (Hetero-junction Bipolar Transistor) includes a collector diffusion layer formed simultaneously with the N+ layer of the variable capacitor, a collector layer, and a Si/SiGe layer epitaxially grown simultaneously with the P+ layer of the variable capacitor. Since a depletion layer formed in a PN junction of the variable capacitor can extend entirely across the N+ layer, reduction in variation range of the capacitance can be suppressed.

    摘要翻译: 可变电容器包括N +层,包括可变电容区,在N +层上外延生长并由SiGe膜和Si膜形成的P +层和P型电极。 NPN-HBT(异质结双极晶体管)包括与可变电容器的N +层同时形成的集电极扩散层,集电极层和与P +层同时外延生长的Si / SiGe层 的可变电容器。 由于形成在可变电容器的PN结中的耗尽层可以完全延伸穿过N +层,所以可以抑制电容的变化范围的减小。

    Power supply device
    3.
    发明授权
    Power supply device 有权
    电源设备

    公开(公告)号:US07852059B2

    公开(公告)日:2010-12-14

    申请号:US11902089

    申请日:2007-09-19

    IPC分类号: G05F1/40

    CPC分类号: G05F1/575

    摘要: A power supply device includes an inductor controlled by switching to be charged or discharged such that a DC input voltage is boosted and a capacitor which smoothes the boosted voltage to generate a DC output voltage. Specifically, the power supply device further includes a transistor connected between the inductor and the capacitor to carry out a rectification function; an output voltage determination circuit which refers to the DC input voltage and the DC output voltage to determine the level of these voltages; and a current control circuit which controls a current flowing through the transistor such that the current has a predetermined value when the output voltage determination circuit determines that the DC output voltage is lower than the DC input voltage.

    摘要翻译: 电源装置包括通过切换进行充电或放电控制的电感器,使得DC输入电压升压,以及电容器,其使升压电压平滑以产生DC输出电压。 具体地,电源装置还包括连接在电感器和电容器之间的晶体管,以实现整流功能; 输出电压确定电路,其参考DC输入电压和DC输出电压以确定这些电压的电平; 以及电流控制电路,其控制流过所述晶体管的电流,使得当所述输出电压确定电路确定所述DC输出电压低于所述DC输入电压时,所述电流具有预定值。

    Solid-state imaging device
    4.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号:US08390715B2

    公开(公告)日:2013-03-05

    申请号:US12763464

    申请日:2010-04-20

    IPC分类号: H04N5/335

    摘要: The present invention provides a solid-state imaging device which is capable of high-speed and high-quality pixel mixture. The solid-state imaging device includes: a plurality of pixels; a row selecting circuit; a plurality of column signal lines each of which is provided to a corresponding one of columns of pixels, is connected to pixels of the corresponding column, and transfers the signals outputted from the connected pixels; a pixel current source which (i) is provided to a corresponding one of the column signal lines, (ii) is connected to the corresponding column signal line, and (iii) supplies to the connected column signal line a current when the signal is outputted from the selected pixel to the connected column signal line; and a control unit which changes the number of rows of pixels being simultaneously selected by the row selecting circuit, and values of the current supplied by the pixel current source.

    摘要翻译: 本发明提供了能够进行高速,高质量的像素混合的固态成像装置。 固态成像装置包括:多个像素; 一行选择电路; 多个列信号线被提供给相应列的像素,连接到相应列的像素,并传送从连接的像素输出的信号; (i)被提供给相应的一列列信号线的像素电流源连接到对应的列信号线,并且(iii)在输出信号时向连接的列信号线提供电流 从所选择的像素到所连接的列信号线; 以及控制单元,其改变由行选择电路同时选择的像素的行数,以及由像素电流源提供的电流的值。

    MIM capacitor
    5.
    发明授权
    MIM capacitor 失效
    MIM电容器

    公开(公告)号:US07030443B2

    公开(公告)日:2006-04-18

    申请号:US10501865

    申请日:2003-09-01

    CPC分类号: H01L28/40 H01L27/0805

    摘要: A MIM (metal-insulator-metal) capacitor is provided with a substrate; a first metal area; a second metal area formed between the substrate and the first metal area; and a first insulating layer formed between the first metal area and the second metal area; wherein a capacitance value is determined by opposing surface areas of the first metal area and the second metal area; and the MIM capacitor is further provided with: a third metal area formed between the second metal area and the substrate; and a second insulating layer formed between the third metal area and the second metal area; wherein the third metal area is connected to a ground potential.

    摘要翻译: 金属 - 绝缘体 - 金属)电容器设置有基板; 第一金属区; 在所述基板和所述第一金属区域之间形成的第二金属区域; 以及形成在所述第一金属区域和所述第二金属区域之间的第一绝缘层; 其中电容值由所述第一金属区域和所述第二金属区域的相对表面积确定; 并且所述MIM电容器还设置有形成在所述第二金属区域和所述基板之间的第三金属区域; 以及形成在所述第三金属区域和所述第二金属区域之间的第二绝缘层; 其中所述第三金属区域连接到地电位。

    Transmitter
    6.
    发明授权
    Transmitter 失效
    发射机

    公开(公告)号:US07116946B2

    公开(公告)日:2006-10-03

    申请号:US10522741

    申请日:2003-10-23

    IPC分类号: H04B1/02 H04B1/04 H01Q11/12

    摘要: The present invention provides a transmitter conforming to the EER method in a wide frequency band at high efficiency. For this purpose, the amplitude component of a modulated signal is input to the power supply terminal of a high-frequency power amplifier 130, the I and Q quadrature signals thereof are input to the high-frequency input terminal of the high-frequency power amplifier 130, and the original modulated signal is obtained from the output of the high-frequency power amplifier 130. A collector voltage is supplied from DC—DC converter group 615 having output voltages being different sequentially to an emitter follower 729 via a switch group 621. One of the outputs of the DC—DC converters 616 to 620 is selected depending on the level of the amplitude component as the collector voltage and supplied to the emitter follower, whereby the difference between the emitter voltage of he emitter follower 729 and the collector voltage of the emitter follower 729 is made smaller and the efficiency of the emitter follower 729 is raised; furthermore, the power supply voltage of the high-frequency power amplifier 130 is voltage-converted by the emitter follower 729, whereby operation in a wide frequency band is made possible.

    摘要翻译: 本发明提供了一种符合EER方法的发射机,在宽频带内具有高效率。 为此,调制信号的幅度分量被输入到高频功率放大器130的电源端子,其I和Q正交信号被输入到高频功率放大器的高频输入端 130,并且从高频功率放大器130的输出获得原始调制信号。 从具有输出电压的DC-DC转换器组615经由开关组621向发射极跟随器729提供集电极电压。 DC-DC转换器616至620的输出之一根据作为集电极电压的振幅分量的电平来选择,并提供给射极跟随器,由此发射极跟随器729的发射极电压与集电极电压 使发射极跟随器729的功率越小,发射极跟随器729的效率越高; 此外,高频功率放大器130的电源电压由射极跟随器729进行电压转换,从而可以在宽频带中进行操作。

    Mim capacitor
    7.
    发明申请
    Mim capacitor 失效
    微电容器

    公开(公告)号:US20050110068A1

    公开(公告)日:2005-05-26

    申请号:US10501865

    申请日:2003-09-01

    CPC分类号: H01L28/40 H01L27/0805

    摘要: A MIM (metal-insulator-metal) capacitor is provided with a substrate; a first metal area; a second metal area formed between the substrate and the first metal area; and a first insulating layer formed between the first metal area and the second metal area; wherein a capacitance value is determined by opposing surface areas of the first metal area and the second metal area; and the MIM capacitor is further provided with: a third metal area formed between the second metal area and the substrate; and a second insulating layer formed between the third metal area and the second metal area; wherein the third metal area is connected to a ground potential.

    摘要翻译: 金属 - 绝缘体 - 金属)电容器设置有基板; 第一金属区; 形成在所述基板和所述第一金属区域之间的第二金属区域; 以及形成在所述第一金属区域和所述第二金属区域之间的第一绝缘层; 其中电容值由所述第一金属区域和所述第二金属区域的相对表面积确定; 并且所述MIM电容器还设置有形成在所述第二金属区域和所述基板之间的第三金属区域; 以及形成在所述第三金属区域和所述第二金属区域之间的第二绝缘层; 其中所述第三金属区域连接到地电位。

    Active filter circuit
    8.
    发明授权
    Active filter circuit 失效
    有源滤波电路

    公开(公告)号:US6157248A

    公开(公告)日:2000-12-05

    申请号:US299796

    申请日:1999-04-26

    IPC分类号: G05F1/00 H03H11/12

    CPC分类号: H03H11/1252 H03H11/1221

    摘要: An active filter circuit (a band stop filter type or a band pass filter type) having high Q value and high efficiency and which is suitable for integration has an input signal vi inputted from the input terminal supplied to the non-inverting input terminal of the first differential amplifier. The output terminal of the first differential amplifier is connected to the non-inverting input terminal of the second differential amplifier, and the first capacitor 3 is connected between this connection line and the alternate current ground. An output of the second differential amplifier is connected to the non-inverting input terminal of the first differential amplifier via the second capacitor, the inverting input terminal of the first differential amplifier, the inverting input terminal of the second differential amplifier 4, the non-inverting input terminal of the third differential amplifier, the output terminal of the third differential amplifier and the output terminal of the active filter circuit. An inverting input terminal of the third differential amplifier is connected to alternate current ground. The output of the second differential amplifier becomes the output signal vo of the active filter circuit.

    摘要翻译: 具有高Q值且高效率并且适合于积分的有源滤波器电路(带阻滤波器类型或带通滤波器类型)具有从提供给第一输入端子的非反相输入端子的输入端子输入的输入信号vi 第一差分放大器 第一差分放大器的输出端子连接到第二差分放大器的非反相输入端,并且第一电容器3连接在该连接线与交流接地之间。 第二差分放大器的输出经由第二电容器,第一差分放大器的反相输入端子,第二差分放大器4的反相输入端子,第二差分放大器的反相输入端子, 第三差分放大器的反相输入端子,第三差分放大器的输出端子和有源滤波器电路的输出端子。 第三差分放大器的反相输入端子连接到交流电流接地。 第二差分放大器的输出变为有源滤波器电路的输出信号vo。

    Transmitter
    9.
    发明申请
    Transmitter 失效
    发射机

    公开(公告)号:US20060068697A1

    公开(公告)日:2006-03-30

    申请号:US10522741

    申请日:2003-10-23

    IPC分类号: H04K3/00

    摘要: The present invention provides a transmitter conforming to the EER method in a wide frequency band at high efficiency. For this purpose, the amplitude component of a modulated signal is input to the power supply terminal of a high-frequency power amplifier 130, the I and Q quadrature signals thereof are input to the high-frequency input terminal of the high-frequency power amplifier 130, and the original modulated signal is obtained from the output of the high-frequency power amplifier 130. A collector voltage is supplied from DC-DC converter group 615 having output voltages being different sequentially to an emitter follower 729 via a switch group 621. One of the outputs of the DC-DC converters 616 to 620 is selected depending on the level of the amplitude component as the collector voltage and supplied to the emitter follower, whereby the difference between the emitter voltage of he emitter follower 729 and the collector voltage of the emitter follower 729 is made smaller and the efficiency of the emitter follower 729 is raised; furthermore, the power supply voltage of the high-frequency power amplifier 130 is voltage-converted by the emitter follower 729, whereby operation in a wide frequency band is made possible.

    摘要翻译: 本发明提供了一种符合EER方法的发射机,在宽频带内具有高效率。 为此,调制信号的幅度分量被输入到高频功率放大器130的电源端子,其I和Q正交信号被输入到高频功率放大器的高频输入端 130,并且从高频功率放大器130的输出获得原始调制信号。 从具有输出电压的DC-DC转换器组615经由开关组621向发射极跟随器729提供集电极电压。 DC-DC转换器616至620的输出之一根据作为集电极电压的振幅分量的电平来选择,并提供给射极跟随器,由此发射极跟随器729的发射极电压与集电极电压 使发射极跟随器729的功率越小,发射极跟随器729的效率越高; 此外,高频功率放大器130的电源电压由射极跟随器729进行电压转换,从而可以在宽频带中进行操作。

    Modulator and semiconductor integrated circuit including modulator and wired or wireless communication device including modulator and semiconductor device
    10.
    发明申请
    Modulator and semiconductor integrated circuit including modulator and wired or wireless communication device including modulator and semiconductor device 审中-公开
    调制器和半导体集成电路包括调制器和有线或无线通信设备,包括调制器和半导体器件

    公开(公告)号:US20050141636A1

    公开(公告)日:2005-06-30

    申请号:US11020259

    申请日:2004-12-27

    摘要: The present invention directly modulates the VCO in accordance with transmission data, reduces the circuit scale and current consumed during transmission and obtains a highly accurate modulated output. A transmission data signal converted into an IQ modulation signal with a predetermined modulation bandwidth that is phase-modulated by the select control signal inputted to the ROM via the modulation circuit. The IQ modulation signal is converted into an analog signal by means of the DAC, and the analog signal is inputted to the gm adjustment device via the noise filter before being converted to an appropriate signal level that corresponds with the control sensitivity of the VCO. The converted analog signal is inputted to a second input terminal for controlling the direct frequency of the VCO and the oscillation frequency of the VCO is modulated. Switching of the BAND of the VCO is controlled by inputting a control signal that is outputted by the BAND CTRL to the third input terminal of the VCO and the control terminal of the gm adjustment device at the same time as controlling the transmission conductance of the gm adjustment device in order to establish the modulation depth of the input signal from the second input terminal of the VCO that corresponds with the VCO control sensitivity, which varies for each BAND, at a target modulation depth, whereby a highly accurate modulated output is obtained.

    摘要翻译: 本发明根据传输数据直接调制VCO,减少传输期间消耗的电路规模和电流,并获得高精度的调制输出。 将经由调制电路输入到ROM的选择控制信号进行相位调制的预定调制带宽转换为IQ调制信号的发送数据信号。 IQ调制信号通过DAC转换为模拟信号,并且模拟信号在被转换成与VCO的控制灵敏度对应的适当信号电平之前经由噪声滤波器输入到gm调节装置。 转换的模拟信号被输入到用于控制VCO的直接频率的第二输入端子,并且VCO的振荡频率被调制。 通过在控制gm的透射电导的同时将由BAND CTRL输出的控制信号输入到VCO的第三输入端子和gm调整装置的控制端子来控制VCO的切换 调整装置,以便在目标调制深度处建立来自VCO的第二输入端的输入信号的调制深度,该VCO对应于每个BAND变化的VCO控制灵敏度,从而获得高精度的调制输出。