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    Semiconductor device and method for manufacturing the same
    2.
    发明授权
    Semiconductor device and method for manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US08314032B2

    公开(公告)日：2012-11-20

    申请号：US12838451

    申请日：2010-07-17

    申请人： Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano ,  Takeshi Sato

    发明人： Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano ,  Takeshi Sato

    IPC分类号： H01L21/311

    CPC分类号： H01L29/7869

    摘要： A method for manufacturing a thin film transistor (TFT) through a process including back exposure, in which oxide semiconductor is used for a channel layer; using an electrode over a substrate as a mask, negative resist is exposed to light from the back of the substrate; the negative resist except its exposed part is removed; and an electrode is shaped by etching a conductive film using the exposed part as an etching mask.

    摘要翻译： 一种通过包括反向曝光的工艺制造薄膜晶体管（TFT）的方法，其中将氧化物半导体用于沟道层; 使用基板上的电极作为掩模，负光刻胶从基板的背面暴露于光; 去除其外露部分的负光刻胶; 并且通过使用暴露部分作为蚀刻掩模蚀刻导电膜来成形电极。

    OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME AND ACTIVE MATRIX SUBSTRATE
    5.
    发明申请
    OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME AND ACTIVE MATRIX SUBSTRATE 失效
    氧化物半导体器件及其制造方法和有源矩阵衬底

    公开(公告)号：US20100140614A1

    公开(公告)日：2010-06-10

    申请号：US12633577

    申请日：2009-12-08

    申请人： Hiroyuki Uchiyama ,  Tetsufumi Kawamura ,  Hironori Wakana

    发明人： Hiroyuki Uchiyama ,  Tetsufumi Kawamura ,  Hironori Wakana

    IPC分类号： H01L29/24 ,  H01L21/36

    CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02617 ,  H01L21/28291 ,  H01L27/10873 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/1225 ,  H01L27/3262 ,  H01L51/5206

    摘要： A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.

    摘要翻译： 在氧化物半导体薄膜中沉积由铟镓锌氧化物，氧化锌锡等制成的氧化物半导体膜时，导入气体中的氧含量比的氧化物半导体与金属之间的接触电阻发生变化的现象 晶体管。 在从金属和氧化物半导体接触的表面的区域的氧含量比为10％以上形成接触层，深度为深度至少3nm以下的区域 进一步形成具有10％或更低的氧含量比的沟道层，从而形成多层结构，并且实现了与电极金属的欧姆特性和诸如抑制阈值电位移动之类的可靠性。

    Semiconductor device, RFID tag using the same and display device
    6.
    发明授权
    Semiconductor device, RFID tag using the same and display device 有权
    半导体器件，使用其的RFID标签和显示器件

    公开(公告)号：US08912537B2

    公开(公告)日：2014-12-16

    申请号：US13642612

    申请日：2011-04-22

    申请人： Hironori Wakana ,  Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Kuniharu Fujii

    发明人： Hironori Wakana ,  Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Kuniharu Fujii

    IPC分类号： H01L29/78 ,  H01L29/786

    CPC分类号： H01L29/7869

    摘要： Disclosed is an oxide semiconductor layer (13) which forms a channel for a thin-film transistor and which includes at least In and oxygen and one or more types of elements from among Zn, Cd, Al, Ga, Si, Sn, Ce, and Ge. A high concentration region (13d) is disposed on one section of the oxide semiconductor layer (13), whereby said region has a maximum In concentration 30 at %; or higher than other regions on the oxide semiconductor layer (13). The film thickness of the oxide semiconductor layer (13) is 100 nm max., and the film thickness of the high concentration region (13d) is 20 nm max. or, preferably, 6 nm max. This enables a thin-film transistor with a sub-threshold slope of 100 mV/decade max., a high on-current, and a high field effect mobility to be achieved.

    摘要翻译： 公开了一种氧化物半导体层（13），其形成用于薄膜晶体管的沟道，并且至少包括In和氧，以及从Zn，Cd，Al，Ga，Si，Sn，Ce中选出的一种或多种元素， 和格。 高浓度区域（13d）设置在氧化物半导体层（13）的一个部分上，由此所述区域的最大In浓度为30原子％。 或高于氧化物半导体层（13）上的其它区域。 氧化物半导体层（13）的膜厚最大为100nm，高浓度区域（13d）的膜厚为20nm以下。 或者优选地，最多6nm。 这使得能够实现具有100mV / 10倍的次阈值斜率，高导通电流和高场效应迁移率的薄膜晶体管。

    Semiconductor Device, RFID Tag Using the Same and Display Device
    7.
    发明申请
    Semiconductor Device, RFID Tag Using the Same and Display Device 有权
    半导体器件，使用其的RFID标签和显示器件

    公开(公告)号：US20130099229A1

    公开(公告)日：2013-04-25

    申请号：US13642612

    申请日：2011-04-22

    申请人： Hironori Wakana ,  Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Kuniharu Fujii

    发明人： Hironori Wakana ,  Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Kuniharu Fujii

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869

    摘要： Disclosed is an oxide semiconductor layer (13) which forms a channel for a thin-film transistor and which includes at least In and oxygen and one or more types of elements from among Zn, Cd, Al, Ga, Si, Sn, Ce, and Ge. A high concentration region (13d) is disposed on one section of the oxide semiconductor layer (13), whereby said region has a maximum In concentration 30 at %; or higher than other regions on the oxide semiconductor layer (13). The film thickness of the oxide semiconductor layer (13) is 100 nm max., and the film thickness of the high concentration region (13d) is 20 nm max. or, preferably, 6 nm max. This enables a thin-film transistor with a sub-threshold slope of 100 mV/decade max., a high on-current, and a high field effect mobility to be achieved.

    摘要翻译： 公开了一种氧化物半导体层（13），其形成用于薄膜晶体管的沟道，并且至少包括In和氧，以及从Zn，Cd，Al，Ga，Si，Sn，Ce中选出的一种或多种元素， 和格。 高浓度区域（13d）设置在氧化物半导体层（13）的一个部分上，由此所述区域的最大In浓度为30原子％。 或高于氧化物半导体层（13）上的其它区域。 氧化物半导体层（13）的膜厚最大为100nm，高浓度区域（13d）的膜厚为20nm以下。 或者优选地，最多6nm。 这使得能够实现具有100mV / 10倍的次阈值斜率，高导通电流和高场效应迁移率的薄膜晶体管。

    Oxide semiconductor device with oxide semiconductor layers of different oxygen concentrations and method of manufacturing the same
    8.
    发明授权
    Oxide semiconductor device with oxide semiconductor layers of different oxygen concentrations and method of manufacturing the same 失效
    具有不同氧浓度的氧化物半导体层的氧化物半导体器件及其制造方法

    公开(公告)号：US08368067B2

    公开(公告)日：2013-02-05

    申请号：US12633577

    申请日：2009-12-08

    申请人： Hiroyuki Uchiyama ,  Tetsufumi Kawamura ,  Hironori Wakana

    发明人： Hiroyuki Uchiyama ,  Tetsufumi Kawamura ,  Hironori Wakana

    IPC分类号： H01L29/10

    CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02617 ,  H01L21/28291 ,  H01L27/10873 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/1225 ,  H01L27/3262 ,  H01L51/5206

    摘要： A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.

    摘要翻译： 在氧化物半导体薄膜中沉积由铟镓锌氧化物，氧化锌锡等制成的氧化物半导体膜时，导入气体中的氧含量比的氧化物半导体与金属之间的接触电阻发生变化的现象 晶体管。 在从金属和氧化物半导体接触的表面的区域的氧含量比为10％以上形成接触层，深度为深度至少3nm以下的区域 进一步形成具有10％或更低的氧含量比的沟道层，从而形成多层结构，并且实现了与电极金属的欧姆特性和诸如抑制阈值电位移动之类的可靠性。

    OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    氧化物半导体器件及其制造方法

    公开(公告)号：US20120280227A1

    公开(公告)日：2012-11-08

    申请号：US13512062

    申请日：2010-11-22

    申请人： Hironori Wakana ,  Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Kuniharu Fujii

    发明人： Hironori Wakana ,  Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Kuniharu Fujii

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7869 ,  H01L29/78696

    摘要： Features are forming a gate electrode on an insulating substrate; forming a first semiconducting layer mainly composed of an indium oxide and having a film thickness of 5 nm or more onto the gate electrode interposing a gate insulating film; forming a second semiconducting layer mainly composed of zinc and tin oxides without containing indium and having a film thickness of 5 to 50 nm on the first semiconducting layer, and including a step of forming a source electrode and a drain electrode on the second semiconducting layer. In this manner, by combining the materials of the first semiconducting layer and the second semiconducting layer with each other, a semiconductor device with a reduced dependency on the film thickness of the semiconducting layer, little characteristic variations on a large area substrate is provided.

    摘要翻译： 特征是在绝缘基板上形成栅电极; 在栅绝缘膜上形成主要由氧化铟构成的膜厚为5nm以上的第一半导电层， 在第一半导电层上形成主要由锌和锡氧化物组成的第二半导体层，其不含铟并且具有5至50nm的膜厚度，并且包括在第二半导体层上形成源电极和漏电极的步骤。 以这种方式，通过将第一半导体层和第二半导体层的材料彼此组合，提供对半导体层的膜厚度的依赖性降低的半导体器件，在大面积衬底上几乎没有特征变化。