SCHEDULING METHOD FOR PROCESSING EQUIPMENT
    6.
    发明申请
    SCHEDULING METHOD FOR PROCESSING EQUIPMENT 有权
    处理设备的调度方法

    公开(公告)号:US20080014058A1

    公开(公告)日:2008-01-17

    申请号:US11775355

    申请日:2007-07-10

    IPC分类号: B65H1/00

    摘要: Methods and apparatus for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput and repeatable wafer processing history are provided. In one embodiment a first substrate is transferred from a first position to a second position and then the first substrate is transferred from the second position to a third position using a first robot. A second substrate is transferred from a first position to a second position and then the second substrate is transferred from the second position to a third position using a second robot. The movement of the first and second robots is synchronized so that the movement from the first position to the second position by the first and second robot is performed within a first time interval.

    摘要翻译: 提供了使用具有增加的系统吞吐量和可重复的晶片处理历史的多室处理系统(例如,集群工具)处理衬底的方法和装置。 在一个实施例中,第一衬底从第一位置转移到第二位置,然后使用第一机器人将第一衬底从第二位置转移到第三位置。 第二基底从第一位置转移到第二位置,然后使用第二机器人将第二基底从第二位置转移到第三位置。 第一机器人和第二机器人的移动被同步,使得在第一时间间隔内执行由第一和第二机器人从第一位置到第二位置的移动。

    SCHEDULING METHOD FOR PROCESSING EQUIPMENT
    7.
    发明申请
    SCHEDULING METHOD FOR PROCESSING EQUIPMENT 有权
    处理设备的调度方法

    公开(公告)号:US20080051929A1

    公开(公告)日:2008-02-28

    申请号:US11775365

    申请日:2007-07-10

    IPC分类号: G06F17/00

    CPC分类号: H01L21/67276

    摘要: Methods and apparatus for increasing the processing throughput of multiple lots of semiconductor wafers through a cluster tool while maintaining a constant wafer history for each lot are provided. A first lot of wafers containing one through n-th wafers is introduced into a cluster tool containing one or more processing chambers. The first lot of wafers is processed for a first time period. A second lot of wafers containing one through n-th wafers is introduced into the cluster tool prior to completion of the first time period, wherein the second lot is introduced so as to minimize a time gap between the n-th wafer of the first lot of wafers and the first wafer of the second lot of wafers while maintaining a first constant wafer history for each wafer within the first lot and maintaining a second constant wafer history for each wafer in the second lot.

    摘要翻译: 提供了通过集群工具增加多批半导体晶片的处理能力的方法和装置,同时保持每批的恒定的晶片历史。 包含一个至第n个晶片的第一批晶片被引入到包含一个或多个处理室的簇工具中。 第一批晶圆首次处理。 在第一时间段完成之前,将包含一个至第n个晶片的第二批晶片引入到该簇工具中,其中引入第二批以最小化第一批第n个晶片之间的时间间隔 的晶片和第二批晶片的第一晶片,同时保持第一批内的每个晶片的第一恒定晶片历史,并为第二批中的每个晶片保持第二恒定的晶片历史。

    ELECTRON BEAM TREATMENT APPARATUS
    9.
    发明申请
    ELECTRON BEAM TREATMENT APPARATUS 有权
    电子束处理装置

    公开(公告)号:US20050092935A1

    公开(公告)日:2005-05-05

    申请号:US10698726

    申请日:2003-10-30

    IPC分类号: H01J37/077 H01J37/317

    摘要: One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder disposed inside the chamber facing the anode; (e) a source of negative voltage whose output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode; (g) a gas inlet adapted to admit gas into the chamber at an introduction rate; and (h) a pump adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.

    摘要翻译: 本发明的一个实施例是一种电子束处理装置,包括:(a)室; (b)具有暴露于所述室内部的相对较大面积表面的阴极; (c)其中具有孔的阳极,其设置在室内并与阴极间隔开工作距离; (d)设置在面向阳极的腔室内的晶片保持器; (e)负电压源,其输出被施加到阴极以提供阴极电压; (f)其输出端施加到阳极的电压源; (g)气体入口,其适于以引入速率将气体引入所述腔室; 以及(h)适于以排气速度从所述室排出气体的泵,所述引入速率和排气速率在所述室中提供气体压力; 其中阴极电压,气体压力和工作距离的值使得阴极和阳极之间没有电弧,并且工作距离大于电子平均自由程。