Slide member and method of manufacturing the same
    2.
    发明授权
    Slide member and method of manufacturing the same 失效
    滑动构件及其制造方法

    公开(公告)号:US5543371A

    公开(公告)日:1996-08-06

    申请号:US150189

    申请日:1993-11-30

    摘要: A slide member has a sliding surface made of ceramic and has a surface roughness of not more than 1.0 .mu.m in center line average roughness Ra. ceramic includes a silicon nitride sintered body, which contains crystal grains having a linear density of at least 35 per 30 .mu.m in length with a boundary phase volume ratio of not more than 15 volume %, and which contains pores of not more than 20 .mu.m in maximum diameter in a content of not more than 3%. In a method of manufacturing the slide member, it is possible to ensure smoothness of the sliding surface by grinding the sliding surface and thereafter heating the ceramic in either inert gas or an atmospheric air. A slide member that can be used under severe sliding conditions of high-speed sliding or the like and that has excellent wear resistance is obtained. Even if the slide member is used for a sliding part of a compressor or the like which employs a fluorocarbon containing no chlorine as a cooling medium, it is possible to prevent the occurrence of seizure and abnormal wear on the sliding surface.

    摘要翻译: PCT No.PCT / JP93 / 00385 Sec。 371日期:1993年11月30日 102(e)日期1993年11月30日PCT 1993年3月29日PCT公布。 公开号WO93 / 2002500 日期:1993年10月14日滑动部件具有由陶瓷制成的滑动面,中心线平均粗糙度Ra的表面粗糙度不大于1.0μm。 陶瓷包括氮化硅烧结体,其包含长度为30μm以上的线密度为35以上,边界相体积比为15体积%以下,并且含有不大于20μm的孔的晶粒 m最大直径,含量不超过3%。 在制造滑动构件的方法中,可以通过研磨滑动表面并随后在惰性气体或大气中加热陶瓷来确保滑动表面的平滑度。 可以获得可以在高速滑动等的严酷滑动条件下使用且具有优异的耐磨性的滑动构件。 即使将滑动部件用于使用不含氯的碳氟化合物作为冷却介质的压缩机等的滑动部件,也可以防止滑动面发生卡滞和异常磨损。

    Porous ceramic film and process for producing the same
    3.
    发明授权
    Porous ceramic film and process for producing the same 失效
    多孔陶瓷膜及其制造方法

    公开(公告)号:US5858523A

    公开(公告)日:1999-01-12

    申请号:US538738

    申请日:1995-10-03

    摘要: A porous ceramic film which is formed onto and bonded to an oxide layer provided on the surface of a porous base, the film composed of finely deposited particles comprising at least one compound including (a) at least one selected from the group consisting of Si, B and Al or the group consisting of the metals of the Groups IVa, Va and VIa and (b) at least one selected from the group consisting of C and N in which the particles are intertwined with each other and bonded to each other through the component of the oxide layer to form a three-dimensionally intertwined structure. This porous ceramic film is produced by forming the oxide layer on the base surface and then heating it to a temperature of at least of the liquid-phase formation temperature of the oxide layer in a gaseous atmosphere containing the above elements (a) and (b). The porous ceramic film has a high porosity, a good pressure resistance and a regulated pore size and is appropriate for a filter, a catalyst support, bioreactor or a structural material.

    摘要翻译: 一种多孔陶瓷膜,其形成在多孔基材的表面上并与其结合的氧化物层上,所述多孔陶瓷膜由精细沉积的颗粒构成,所述微粒包含至少一种化合物,所述至少一种化合物包括(a)选自Si, B和Al或由IVa,Va和VIa族金属组成的组,和(b)选自C和N中的至少一种,其中颗粒彼此缠结并通过 氧化物层的组分以形成三维缠结的结构。 该多孔陶瓷膜通过在基体表面上形成氧化物层,然后在含有上述元素(a)和(b)的气体气氛中将其加热至至少氧化物层的液相形成温度的温度 )。 多孔陶瓷膜具有高孔隙率,良好的耐压性和调节的孔径,适用于过滤器,催化剂载体,生物反应器或结构材料。

    High-strength porous silicon nitride body and process for producing the
same
    4.
    发明授权
    High-strength porous silicon nitride body and process for producing the same 失效
    高强度多孔氮化硅体及其制造方法

    公开(公告)号:US5780374A

    公开(公告)日:1998-07-14

    申请号:US774612

    申请日:1996-12-30

    CPC分类号: C04B38/00 C04B38/06

    摘要: A high-porosity and high-strength porous silicon nitride body comprises columnar silicon nitride grains and an oxide bond phase containing 2 to 15 wt. %, in terms of oxide based on silicon nitride, of at least one rare earth element, and has an SiO.sub.2 /(SiO.sub.2 +rare earth element oxide) weight ratio of 0.012 to 0.65 and an average pore size of at most 3.5 .mu.m. The porous silicon nitride body is produced by compacting comprising a silicon nitride powder, 2 to 15 wt. %, in terms of oxide based on silicon nitride, of at least one rare earth element, and an organic binder while controlling the oxygen content and carbon content of said compact; and sintering said compact in an atmosphere comprising nitrogen at 1,650.degree. to 2,200.degree. C. to obtain a porous body having a three-dimensionally entangled structure made up of columnar silicon nitride grains and an oxide bond phase, and having an SiO.sub.2 /(SiO.sub.2 +rare earth element oxide) weight ratio of 0.012 to 0.65.

    摘要翻译: 高孔隙率和高强度多孔氮化硅体包括柱状氮化硅颗粒和含有2至15wt。 至少一种稀土元素为基于氮化硅的氧化物的%,SiO 2 /(SiO 2 +稀土元素氧化物)的重量比为0.012〜0.65,平均孔径为3.5μm以下。 多孔氮化硅体通过压制而制成,其包含氮化硅粉末,2〜15重量% %,基于氮化硅的氧化物,至少一种稀土元素和有机粘合剂,同时控制所述成型体的氧含量和碳含量; 并在包含氮气的气氛中在1650℃-2200℃下烧结所述成型体,得到由柱状氮化硅晶粒和氧化物结合相构成的三维缠结结构的多孔体,并具有SiO 2 /(SiO 2 + 稀土元素氧化物)重量比为0.012〜0.65。

    Method of preparing silicon nitride porous body
    5.
    发明授权
    Method of preparing silicon nitride porous body 失效
    氮化硅多孔体的制​​备方法

    公开(公告)号:US5846460A

    公开(公告)日:1998-12-08

    申请号:US686818

    申请日:1996-07-26

    摘要: A silicon nitride ceramic porous body having excellent acid and alkali resistance, mechanical strength, and durability can be employed as a filter or a catalytic carrier. The silicon nitride porous body contains a plurality of silicon nitride crystal grains with pores formed in grain boundary parts thereof, or includes a body part and a pore part wherein the body part is formed by a plurality of silicon nitride crystal grains and the pore part forms a three-dimensional network structure. The body part is formed by at least 90 vol. % of silicon nitride crystal grains, which are directly bonded to each other. In order to prepare the finished ceramic porous body, a porous body compact which is mainly composed of silicon nitride, is brought into contact with an acid and/or an alkali so that a component other than silicon nitride is partially or entirely dissolved and removed from the compact. The compact is prepared from a mixed powder of silicon nitride powder and at least one of a rare earth compound powder, a transition metal compound powder, and a bismuth compound, which is heat treated in the temperature range from 1600.degree. C. to 2100.degree. C.

    摘要翻译: 可以使用具有优异的耐酸碱性,机械强度和耐久性的氮化硅陶瓷多孔体作为过滤器或催化载体。 氮化硅多孔体含有在其晶界部分形成有孔的多个氮化硅晶粒,或包括主体部分和孔部分,其中主体部分由多个氮化硅晶粒形成并且孔部分形成 一个三维网络结构。 身体部位形成至少90体积。 %的氮化硅晶粒直接接合。 为了制备成品陶瓷多孔体,将主要由氮化硅组成的多孔体压块与酸和/或碱接触,使得除了氮化硅以外的成分部分或全部溶解并从其中去除 紧凑型。 该压块由氮化硅粉末和稀土化合物粉末,过渡金属化合物粉末和铋化合物中的至少一种的混合粉末制备,其在1600℃至2100℃的温度范围内进行热处理 C。

    Ceramic porous body and method for preparing the same
    6.
    发明授权
    Ceramic porous body and method for preparing the same 失效
    陶瓷多孔体及其制备方法

    公开(公告)号:US5696042A

    公开(公告)日:1997-12-09

    申请号:US531668

    申请日:1995-09-21

    摘要: A ceramic porous body for a filter or a catalyst carrier, having a structure in which voids each having the same volume as that of a sphere of 10 .mu.m to 500 .mu.m in diameter are formed and the voids are communicated with each other through smaller fine pores, the ceramic porous body having a volume fraction of the voids and the fine pores of from 15% to 60% and being formed of components 70% or higher by volume of which is silicon nitride. The ceramic porous body is prepared by mixing coarse silicon nitride powder with fine silicon nitride powder(s) at a mixing ratio by volume of the fine silicon nitride powder to the combined volume of the fine and coarse silicon nitride powders in the range of 1/99 to 1/2; adding one or more compounds of the group IIa elements, the group IIIa elements, transition metals, Al and Si in a range of 1% to 30% by volume as their oxides to the silicon nitride powder mixture; molding the resultant powder mixture; and sintering the molded body in a non-oxidizing atmosphere of at least 0.9 atm at a temperature ranging from 1100.degree. C. to 2000.degree. C.

    摘要翻译: 一种用于过滤器或催化剂载体的陶瓷多孔体,其结构是形成具有与直径为10μm至500μm的球体相同体积的空隙,并且空隙通过较小的相互连通 细孔,陶瓷多孔体的空隙体积分数和细孔为15%〜60%,由体积为70%以上的成分形成为氮化硅。 陶瓷多孔体是通过将氮化硅粉末与氮化硅微粉末的混合比例与氮化硅细粉末的体积比与在+ E范围内的微细和粗大的氮化硅粉末的组合体积进行混合来制备的 ,1/99 + EE至+ E,fra 1/2 + EE; 将一种或多种IIa族元素,IIIa族元素,过渡金属,Al和Si的化合物作为其氧化物以1体积%至30体积%的范围添加到氮化硅粉末混合物中; 模制所得粉末混合物; 并在1100〜2000℃的温度下在至少0.9atm的非氧化性气氛中烧结成型体。

    Phosphor, Method For Producing Same, And Light-Emitting Device Using Same
    7.
    发明申请
    Phosphor, Method For Producing Same, And Light-Emitting Device Using Same 审中-公开
    荧光体及其制造方法以及使用其的发光装置

    公开(公告)号:US20080191607A1

    公开(公告)日:2008-08-14

    申请号:US11661686

    申请日:2005-08-25

    IPC分类号: H01J1/62 C09K11/54

    摘要: A Phosphor represented by the general formula Zn(1−x)AxS:E,D is characterized by having a Blue-Cu light-emitting function. In the above general formula, A represents at least one group 2A element selected from the group consisting of Be, Mg, Ca, Sr and Ba; E represents an activator containing Cu or Ag; D represents a coactivator containing at least one element selected from group 3B and group 7B elements; and x represents a mixed crystal ratio satisfying 0≦x

    摘要翻译: 由通式Zn(1-x)A x S:E,D表示的荧光体的特征在于具有蓝-CU发光功能。 在上述通式中,A表示选自Be,Mg,Ca,Sr和Ba中的至少一种2A族元素; E表示含有Cu或Ag的活化剂; D表示含有选自3B族和7B族元素中的至少一种元素的共激活剂; x表示满足0 <= x <1的混晶比。 活化剂优选以等于或高于辅助激活剂的摩尔浓度包含以获得短波长的发射。 作为活化剂,分别使用Cu和Ag,而Ag可以与Au组合使用。

    Aluminum base member for semiconductor device containing a nitrogen rich
surface and method for producing the same
    8.
    发明授权
    Aluminum base member for semiconductor device containing a nitrogen rich surface and method for producing the same 有权
    含有富氮表面的半导体装置用铝基材及其制造方法

    公开(公告)号:US6123895A

    公开(公告)日:2000-09-26

    申请号:US256783

    申请日:1999-02-24

    摘要: A member for semiconductor devices comprising a composite alloy of aluminum or an aluminum alloy and silicon carbide, wherein silicon carbide grains are dispersed in aluminum or the aluminum alloy in an amount of from 10 to 70% by weight, the amount of nitrogen in the surface of the member is larger than that in the inside thereof, and the ratio of aluminum or the aluminum alloy to silicon carbide is the same in the surface and the inside. The member is produced by mixing powdery materials of aluminum or an aluminum alloy and silicon carbide, compacting the mixed powder, and sintering the compact in a non-oxidizing atmosphere containing nitrogen gas, at a temperature between 600.degree. C. and the melting point of aluminum. The member is lightweight and has high thermal conductivity as well as thermal expansion coefficient which is well matches with that of ceramics and others. Therefore, the member is especially favorable to high-power devices.

    摘要翻译: 包括铝或铝合金的复合合金和碳化硅的半导体器件的构件,其中碳化硅颗粒以10至70重量%的量分散在铝或铝合金中,表面中的氮的量 的构件比其内部大,铝或铝合金与碳化硅的比例在表面和内部相同。 该构件通过混合铝或铝合金的粉末材料和碳化硅,压制混合粉末,并在含有氮气的非氧化性气氛中在600℃的温度和 铝。 该部件重量轻,导热系数高,热膨胀系数高,与陶瓷等相匹配。 因此,该会员特别有利于大功率设备。

    Porous semiconductor and process for producing the same

    公开(公告)号:US20050042743A1

    公开(公告)日:2005-02-24

    申请号:US10500975

    申请日:2003-07-10

    摘要: The present invention provides a filter with which organic matter, bacteria, viruses, and other harmful substances can be trapped, and the trapped material can be sterilized and decomposed, at low cost and extremely high efficiency. A porous ceramic or metal is used as a substrate, and a porous semiconductor composed of a semiconductor material having a light emitting function is formed in the interior or on the surface of this substrate. An electrode is provided to this product to serve as a filter, voltage is applied so that ultraviolet light is emitted while a fluid is being filtered, and any harmful substances are filtered and simultaneously sterilized and decomposed. The porous semiconductor layer is preferably composed of columns grown perpendicular to the substrate plane, and has the function of emitting ultraviolet light with a wavelength of 400 nm or less. The pores in the porous substrate column are through-holes perpendicular to the substrate plane, and the average size of these pores is preferably from 0.1 to 100 μm. The distal ends of the columns preferably have a pointed shape. To manufacture, a suspension of semiconductor particles having a light emitting function is filtered through the porous substrate serving as a filter medium so as to form a deposited layer of semiconductor particles on the porous substrate surface. A deposited layer of p-type semiconductor particles and a deposited layer of n-type semiconductor particles may also be formed so that these form a pn junction. Further, the present invention is characterized in that an insulating layer is formed on the top and bottom surfaces of the porous semiconductor layer, and semiconductor particles are dispersed in the insulating layer, with the bandgap of the semiconductor particles in the porous light emitting layer or the porous semiconductor layer being at least 3.2 eV, and being doped with gadolinium, which is the light emitting center. In addition, the porous semiconductor layer may be made of porous silicon nitride composed of columnar Si3N4 particles with an average aspect ratio of at least 3 and an oxide-based binder phase containing at least one of rare earth element, and emit visible light or ultraviolet light.