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公开(公告)号：US5284730A
公开(公告)日：1994-02-08
申请号：US925617
申请日：1992-08-06
申请人： Tetsuya Takei , Shigeru Shirai , Hirokazu Ohtoshi , Ryuji Okamura , Yasuyoshi Takai , Hiroyuki Katagiri
发明人： Tetsuya Takei , Shigeru Shirai , Hirokazu Ohtoshi , Ryuji Okamura , Yasuyoshi Takai , Hiroyuki Katagiri
CPC分类号： C23C16/30 , G03G5/08221
摘要： An electrophotographic light-receiving member has a surface layer of a non-single crystal material (Si.sub.x C.sub.y O.sub.z).sub.t H.sub.u F.sub.v (wherein 0.1.ltoreq.x.ltoreq.0.4, 0.4.ltoreq.y.ltoreq.0.7, 0.05.ltoreq.z.ltoreq.0.2, x+y+z=1, 0.299.ltoreq.t.ltoreq.0.589, 0.41.ltoreq.u.ltoreq.0.7, 0.001.ltoreq.v.ltoreq.0.1 and t+u+v=1), in which the ratio of silicon atoms bonded to carbon atoms in the surface layer is at least 50% of the total number of silicon atoms, and the ratio of silicon atoms bonded to oxygen atoms is 10 to 30 atomic % of the total number of silicon atoms.
摘要翻译： 电子照相光接收元件具有非单晶材料（SixCyOz）tHuFv（其中0.1≤x≤0.4,0.4≤y≤0.7,0.05≤z≤0.2，x + y）的表面层 + z = 1，0.299 <= t <= 0.589，0.41 <= u <= 0.7，0.001 <= v <= 0.1，t + u + v = 1），其中与碳原子键合的硅原子比 表面层为硅原子总数的至少50％，与氧原子键合的硅原子的比例为硅原子总数的10〜30原子％。
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2.发明授权
公开(公告)号：US5480627A
公开(公告)日：1996-01-02
申请号：US200651
申请日：1994-02-23
CPC分类号： G03G5/102 , G03G5/10 , Y10S29/095 , Y10T408/44 , Y10T82/10
摘要： A method of treating a substrate for an electrophotographic photosensitive member by a process comprises the steps;a) cutting the surface of the substrate to remove the surface in the desired thickness; andb) bringing the cut surface of the substrate into contact with water having a temperature of from 5.degree. C. to 90.degree. C., having a resistivity of not less than 11 M.OMEGA..multidot.cm at 25.degree. C., containing fine particles with a particle diameter of not smaller than 0.2 .mu.m in a quantity of not more than 10,000 particles per milliliter, containing microorganisms in a total viable cell count of not more than 100 per milliliter and containing an organic matter in a quantity of not more than 10 mg per liter, for at least 10 seconds at a pressure of from 1 kg.multidot.f/cm.sup.2 to 300 kg.multidot.f/cm.sup.2.
摘要翻译： 通过该方法处理电子照相感光构件的基板的方法包括以下步骤： a）切割基材的表面以除去所需厚度的表面; 和b）使基材的切割表面与温度为5℃至90℃的水接触，其在25℃下的电阻率不小于11M OMEGA xcm，其中包含具有 每毫升不超过10,000个颗粒的粒径不小于0.2μm的粒径，含有总活细胞数不超过100毫升的微生物，并且含有不大于10的有机物质 在1kgxf / cm 2至300kgxf / cm 2的压力下至少10秒钟。
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3.发明授权
公开(公告)号：US5314780A
公开(公告)日：1994-05-24
申请号：US841989
申请日：1992-02-26
CPC分类号： G03G5/102 , G03G5/10 , Y10S29/095 , Y10T408/44 , Y10T82/10
摘要： A method of treating a substrate for an electrophotographic photosensitive member by a process comprises the steps of;a) cutting the surface of the substrate to remove the surface in the desired thickness; andb) bringing the cut surface of the substrate into contact with water having a temperature of from 5.degree. C. to 90.degree. C., having a resistivity of not less than 11 M.OMEGA..multidot.cm at 25.degree. C., containing fine particles with a particle diameter of not smaller than 0.2 .mu.m in a quantity of not more than 10,000 particles per milliliter, containing microorganisms in a total viable cell count of not more than 100 per milliliter and containing an organic matter in a quantity of not more than 10 mg per liter, for at least 10 seconds at a pressure of from 1 kg.multidot.f/cm.sup.2 to 300 kg.multidot.f/cm.sup.2.
摘要翻译： 通过该方法处理电子照相感光构件的基板的方法包括以下步骤： a）切割基材的表面以除去所需厚度的表面; 和b）使基材的切割表面与温度为5℃至90℃的水接触，其在25℃下的电阻率不小于11M OMEGA xcm，其中包含具有 每毫升不超过10,000个颗粒的粒径不小于0.2μm的粒径，含有总活细胞数不超过100毫升的微生物，并且含有不大于10的有机物质 在1kgxf / cm 2至300kgxf / cm 2的压力下至少10秒钟。
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4.发明授权
公开(公告)号：US5514506A
公开(公告)日：1996-05-07
申请号：US165840
申请日：1993-12-14
申请人： Yasuyoshi Takai , Tetsuya Takei , Hirokazu Otoshi , Ryuji Okamura , Hiroyuki Katagiri , Satoshi Kojima
发明人： Yasuyoshi Takai , Tetsuya Takei , Hirokazu Otoshi , Ryuji Okamura , Hiroyuki Katagiri , Satoshi Kojima
IPC分类号： G03G5/082
CPC分类号： G03G5/08228 , G03G5/08242
摘要： A light receiving member comprising a substrate and a light receiving layer disposed on said substrate, said light receiving layer having a stacked structure comprising a plurality of constituent layers each being composed of a non-single crystal material containing silicon atoms as a matrix and at least either hydrogen atoms or halogen atoms, characterized in that said light receiving layer has a region containing at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms at an enhanced concentration distribution in the thickness direction in the vicinity of at least one layer interface of the light receiving layer.
摘要翻译： 一种受光部件，包括基板和设置在所述基板上的光接收层，所述光接收层具有堆叠结构，所述层叠结构包括多个构成层，每个构成层由含有硅原子作为基质的非单晶材料构成，并且至少 氢原子或卤素原子，其特征在于，所述光接收层具有包含至少一种选自氢原子和卤原子的原子的区域，其浓度分布在厚度方向上至少在附近至少 光接收层的一层界面。
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5.发明授权Light receiving member, substrate for said light receiving member, and electrophotographic apparatus having said light receiving member 失效光接收元件，用于所述光接收元件的基片和具有所述光接收元件的电子照相设备
公开(公告)号：US5853936A
公开(公告)日：1998-12-29
申请号：US814588
申请日：1997-03-10
CPC分类号： G03G15/751 , G03G5/10
摘要： An electrophotographic light receiving member comprising a substrate in a cylindrical form and a light receiving layer formed on said substrate, wherein said substrate has (i) a portion with an enlarged bore at least on the side of an end portion of said substrate and (ii) a portion in a tapered form situated next to and outside said portion (i). An electrophotographic apparatus provided with said electrophotographic light receiving member.
摘要翻译： 一种电子照相光接收元件，包括圆柱形的基底和形成在所述基底上的光接收层，其中所述基底具有（i）至少在所述基底的端部侧上具有扩大的孔的部分， ）位于所述部分（i）旁边和外侧的锥形形状的部分。 设置有所述电子照相光接收元件的电子照相设备。
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6.发明授权公开(公告)号：US06406554B1
公开(公告)日：2002-06-18
申请号：US09605759
申请日：2000-06-28
IPC分类号： B08B908
CPC分类号： G03G5/08278 , G03G5/08214 , G03G5/08221 , G03G5/08235
摘要： The present invention provides a method of producing an electrophotographic photosensitive member capable of obtaining high-quality uniform images without image defects and nonuniformity in image density. The method of producing an electrophotographic photosensitive member includes a step forming a functional film on a substrate, and a washing step of spraying water on the substrate surface from concentrically arranged nozzle groups positioned in a twisted relationship before the step of forming the functional film.
摘要翻译： 本发明提供一种制造电子照相感光构件的方法，该方法能够获得高质量均匀的图像，而没有图像缺陷和图像密度不均匀。 制造电子照相感光构件的方法包括在基板上形成功能膜的步骤，以及在形成功能膜的步骤之前，从位于扭曲关系的同心布置的喷嘴组在基板表面上喷射水的洗涤步骤。
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公开(公告)号：US06435130B1
公开(公告)日：2002-08-20
申请号：US08916540
申请日：1997-08-22
申请人： Satoshi Takaki , Yoshio Segi , Atsushi Yamagami , Hiroyuki Katagiri , Hitoshi Murayama , Yasuyoshi Takai
发明人： Satoshi Takaki , Yoshio Segi , Atsushi Yamagami , Hiroyuki Katagiri , Hitoshi Murayama , Yasuyoshi Takai
IPC分类号： C23C16509
CPC分类号： H01J37/32091 , C23C16/24 , C23C16/45578 , C23C16/509 , G03G5/08278
摘要： A plasma CVD apparatus comprising a substantially enclosed reaction chamber containing substrate holding means and a cathode electrode arranged therein, wherein a high frequency power from a high frequency power source is supplied to said cathode electrode to generate plasma between said substrate holding means having a subtrate positioned thereon and said cathode electrode whereby plasma-processing said substrate, characterized in that said cathode electrode comprises a plurality of conductor members situated on substantially the same axis which are capacitively coupled by a dielectric member. A plasma-processing method using said cathode electrode.
摘要翻译： 一种等离子体CVD装置，包括：基本封闭的反应室，其包含基板保持装置和布置在其中的阴极电极，其中来自高频电源的高频功率被提供给所述阴极，以在所述基板保持装置之间产生等离子体，所述基板保持装置具有位于 在其上和所述阴极电极，由此对所述衬底进行等离子体处理，其特征在于，所述阴极包括位于基本上相同的轴上的多个导体构件，所述多个导体构件通过电介质构件电容耦合。1。一种使用所述阴极电极的等离子体处理方法。
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公开(公告)号：US06335281B1
公开(公告)日：2002-01-01
申请号：US09334176
申请日：1999-06-16
IPC分类号： H01L2144
CPC分类号： C23C16/54 , C23C16/4581 , C23C16/46
摘要： In a deposited film forming process or apparatus, a deposited film is formed on a film-forming substrate by reduced-pressure vapor phase growth. The film-forming substrate is set on an auxiliary substrate and an auxiliary-substrate cap member is set at the upper part thereof. A maximum temperature difference between temperature at the upper end of the film-forming substrate and the temperature at the lower end of the auxiliary-substrate cap member provided on the film-forming substrate at its upper part is so controlled as to be not greater than a prescribed value so that a film deposited on the auxiliary-substrate cap member is improved in adhesion. Any deposits of films on the part other than the film-forming substrate can be prevented from coming off and scattering on the film-forming substrate so that deposited films having uniform film thickness and film quality can steadily be formed and also faulty images can occur less frequently. It is also possible to achieve improvements of various properties of films formed, film forming rate, reproducibility, and productivity so that yield can dramatically be improved in mass production.
摘要翻译： 在沉积膜形成工艺或装置中，通过减压气相生长在成膜基板上形成沉积膜。 成膜基板设置在辅助基板上，辅助基板盖部件设置在其上部。 成膜基板的上端的温度与设置在成膜基板上部的辅助基板盖部件的下端的温度之间的最大温度差被控制为不大于 规定值，使得沉积在辅助基板盖构件上的膜提高了粘附性。 可以防止膜形成基板以外的部分的沉积物在成膜基板上脱落并散射，从而可以稳定地形成膜厚度和膜质量均匀的沉积膜，并且可以发生较少的图像 经常。 也可以实现成膜的各种性能，成膜速度，再现性和生产率的改善，从而大量提高产量。
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9.发明授权Method for forming a deposited film by plasma chemical vapor deposition and apparatus for forming a deposited film by plasma chemical vapor deposition 失效通过等离子体化学气相沉积形成沉积膜的方法和通过等离子体化学气相沉积形成沉积膜的装置
公开(公告)号：US6158382A
公开(公告)日：2000-12-12
申请号：US989233
申请日：1997-12-12
申请人： Yoshio Segi , Hiroyuki Katagiri , Yasuyoshi Takai
发明人： Yoshio Segi , Hiroyuki Katagiri , Yasuyoshi Takai
IPC分类号： G03G5/082 , C23C16/27 , C23C16/44 , C23C16/455 , C23C16/50 , C23C16/509 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45561 , C23C16/455 , C23C16/45578 , C23C16/5093
摘要： A film-forming method by a plasma CVD process, comprising introducing a raw material gas into a reaction chamber containing a substrate positioned therein through a plurality of gas ejecting holes provided at a gas feed pipe and introducing a discharging energy into said reaction chamber to excite and decompose said film-forming raw material gas introduced into said reaction chamber whereby causing the formation of a deposited film on said substrate, characterized in that the introduction of said film-forming raw material gas into said reaction chamber is conducted by ejecting the film-forming raw material gas toward a member opposed to the substrate from each of right and left sides of the gas feed pipe through the gas ejecting holes of the gas feed pipe at a gas-ejecting angle (a) of 45.degree..ltoreq.(a)
摘要翻译： 通过等离子体CVD法的成膜方法，包括通过设置在气体供给管上的多个气体喷射孔将原料气体引入到设置在其中的基板的反应室中，并将排出能量引入到所述反应室中以进行激发 并且分解引入所述反应室的所述成膜原料气体，从而在所述基材上形成沉积膜，其特征在于，将所述成膜原料气体引入所述反应室中， 通过气体供给管的气体喷射孔，以45°的气体喷射角（a）从气体供给管的左右两侧向与基板相对的部件形成原料气体 ）<90°相对于在所述圆柱形基底和所述多个气体供给管中的每一个之间通过的管线。
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公开(公告)号：US6156472A
公开(公告)日：2000-12-05
申请号：US186421
申请日：1998-11-05
CPC分类号： G03G5/08214 , G03G5/102
摘要： To provide an electrophotographic photosensitive member manufacturing method capable of preventing a substrate from corroding in working of the substrate and obtaining a high-quality image free from image defects and image density unevenness, the method of manufacturing an electrophotographic photosensitive member comprises the step of forming a functional film made of an amorphous material on the surface of an aluminum substrate by reduced-pressure vapor deposition, wherein the surface of the substrate is cleaned with the water containing an inhibitor as a specific component before the step of forming an electrophotographic photosensitive member.
摘要翻译： 为了提供能够防止基板在基板加工中腐蚀并获得没有图像缺陷和图像浓度不均匀性的高质量图像的电子照相感光构件制造方法，电子照相感光构件的制造方法包括以下步骤： 通过减压气相沉积在铝基板的表面上由非晶材料制成的功能膜，其中在形成电子照相感光构件的步骤之前，用含有抑制剂的水作为特定成分清洗基板的表面。
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