公开(公告)号：US09418937B2

公开(公告)日：2016-08-16

申请号：US13315642

申请日：2011-12-09

申请人： Thomas Detzel ,  Johann Gross ,  Robert Illing ,  Maximilian Krug ,  Sven Gustav Lanzerstorfer ,  Michael Nelhiebel ,  Werner Robl ,  Michael Rogalli ,  Stefan Woehlert

发明人： Thomas Detzel ,  Johann Gross ,  Robert Illing ,  Maximilian Krug ,  Sven Gustav Lanzerstorfer ,  Michael Nelhiebel ,  Werner Robl ,  Michael Rogalli ,  Stefan Woehlert

IPC分类号： H01L23/52 ,  H01L23/532 ,  H01L21/288

CPC分类号： H01L23/3735 ,  H01L21/2885 ,  H01L21/4882 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit includes a base element and a copper element over the base element, the copper element having a thickness of at least 5 μm and a ratio of average grain size to thickness of less than 0.7.

摘要翻译： 集成电路包括在基底元件上的基底元件和铜元件，铜元素的厚度至少为5μm，平均晶粒尺寸与厚度之比小于0.7。

公开(公告)号：US20130147047A1

公开(公告)日：2013-06-13

申请号：US13315642

申请日：2011-12-09

申请人： Thomas Detzel ,  Johann Gross ,  Robert Illing ,  Maximilian Krug ,  Sven Gustav Lanzerstorfer ,  Michael Nelhiebel ,  Werner Robl ,  Michael Rogalli ,  Stefan Woehlert

发明人： Thomas Detzel ,  Johann Gross ,  Robert Illing ,  Maximilian Krug ,  Sven Gustav Lanzerstorfer ,  Michael Nelhiebel ,  Werner Robl ,  Michael Rogalli ,  Stefan Woehlert

IPC分类号： H01L23/48 ,  H01L21/28

CPC分类号： H01L23/3735 ,  H01L21/2885 ,  H01L21/4882 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit includes a base element and a copper element over the base element, the copper element having a thickness of at least 5 μm and a ratio of average grain size to thickness of less than 0.7.

摘要翻译： 集成电路包括在基底元件上的基底元件和铜元件，铜元件具有至少5μm的厚度，并且平均晶粒尺寸与厚度之比小于0.7。

公开(公告)号：US08502274B1

公开(公告)日：2013-08-06

申请号：US13441380

申请日：2012-04-06

申请人： Kurt Matoy ,  Thomas Detzel ,  Michael Nelhiebel ,  Arno Zechmann ,  Stefan Decker ,  Robert Illing ,  Sven Gustav Lanzerstorfer ,  Christian Djelassi ,  Bernhard Auer ,  Stefan Woehlert

发明人： Kurt Matoy ,  Thomas Detzel ,  Michael Nelhiebel ,  Arno Zechmann ,  Stefan Decker ,  Robert Illing ,  Sven Gustav Lanzerstorfer ,  Christian Djelassi ,  Bernhard Auer ,  Stefan Woehlert

IPC分类号： H01L23/52

CPC分类号： H01L29/7813 ,  H01L23/528 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/7815 ,  H01L2924/0002 ,  H01L2924/00

摘要： Power transistor cells are formed in a cell array of an integrated circuit. Contact vias may electrically connect a metal structure above the cell array and the power transistor cells. A connecting line electrically connects a first element arranged in the cell array and a second element arranged in a peripheral region. A portion of the connecting line is arranged between the metal structure and the cell array and runs between a first axis and a second axis which are arranged parallel and at a distance to each other. The distance is greater than a width of the connecting line portion. The connecting line portion is tangent to both the first axis and the second axis. Shear-induced material transport along the connecting line is reduced by shortening critical portions or by exploiting grain boundary effects. The reliability of an insulator structure covering the connecting line is increased.

摘要翻译： 功率晶体管单元形成在集成电路的单元阵列中。 接触通孔可电连接单元阵列上方的金属结构和功率晶体管单元。 连接线将布置在单元阵列中的第一元件和布置在周边区域中的第二元件电连接。 连接线的一部分布置在金属结构和电池阵列之间，并且在平行且彼此间隔一定距离的第一轴和第二轴之间延伸。 距离大于连接线部分的宽度。 连接线部分与第一轴线和第二轴线相切。 通过缩短临界部分或利用晶界效应，沿着连接线的剪切诱导材料传输减少。 覆盖连接线的绝缘体结构的可靠性增加。

公开(公告)号：US20130027830A1

公开(公告)日：2013-01-31

申请号：US13194604

申请日：2011-07-29

申请人： Robert Illing

发明人： Robert Illing

IPC分类号： H02H5/04

CPC分类号： H02H7/222 ,  H02H5/044 ,  H03K17/0822 ,  H03K2017/0806

摘要： A method can be used for driving an electronic switch integrated in a semiconductor body. A first temperature is measured at a first position of the semiconductor body. A temperature propagation is detected in the semiconductor body. The electronic switch is switched off when the temperature at the first position rises above a first threshold that is set dependent on the detected temperature propagation.

摘要翻译： 可以使用一种方法来驱动集成在半导体本体中的电子开关。 在半导体本体的第一位置处测量第一温度。 在半导体本体中检测出温度传播。 当第一位置的温度升高到取决于检测到的温度传播设定的第一阈值时，电子开关被关闭。

公开(公告)号：US08203315B2

公开(公告)日：2012-06-19

申请号：US12242266

申请日：2008-09-30

申请人： Markus Ladurner ,  Robert Illing

发明人： Markus Ladurner ,  Robert Illing

IPC分类号： H02J7/04 ,  H02J7/16

CPC分类号： H03K17/0822 ,  H03K2017/0806

摘要： In a method for operating a power semiconductor circuit a power semiconductor chip is provided which includes a power semiconductor switch with a first load terminal and with a second load terminal. Further, a first temperature sensor which is thermally coupled to the power semiconductor switch and a second temperature sensor are provided. The power semiconductor switch is switched OFF or kept switched OFF if the temperature difference between a first temperature of the first temperature sensor and a second temperature of the second temperature sensor is greater than or equal to a switching-OFF threshold temperature difference which depends, following an inconstant first function, on the voltage drop across the power semiconductor switch between the first load terminal and the second load terminal.

摘要翻译： 在用于操作功率半导体电路的方法中，提供了功率半导体芯片，其包括具有第一负载端子和第二负载端子的功率半导体开关。 此外，提供了热耦合到功率半导体开关的第一温度传感器和第二温度传感器。 如果第一温度传感器的第一温度和第二温度传感器的第二温度之间的温度差大于或等于关断阈值温度差，则功率半导体开关被切断或保持关闭，其依赖于 关于第一负载端子和第二负载端子之间的功率半导体开关上的电压降的不可预测的第一功能。

公开(公告)号：US08045310B2

公开(公告)日：2011-10-25

申请号：US12649974

申请日：2009-12-30

申请人： Alberto Zanardi ,  Erich Scheikl ,  Robert Illing ,  Herbert Hopfgartner

发明人： Alberto Zanardi ,  Erich Scheikl ,  Robert Illing ,  Herbert Hopfgartner

IPC分类号： H02H9/02

CPC分类号： H03K17/0822

摘要： A semiconductor device with an over-current detection feature is disclosed. According to an example of the invention the device includes: a semiconductor chip including a load current path that conducts a load current in response to an input signal activating the load current flow. A current sensor arrangement provides a measurement signal representing the load current. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-current when the measurement signal exceeds the first threshold after a delay time period starting from the activation of the load current flow has elapsed.

摘要翻译： 公开了具有过电流检测特征的半导体器件。 根据本发明的示例，该装置包括：半导体芯片，其包括响应于激活负载电流流动的输入信号而传导负载电流的负载电流路径。 电流传感器装置提供表示负载电流的测量信号。 评估电路被配置为在从负载电流流动的激活开始的延迟时间段过去之后，将测量信号与第一阈值进行比较，并且在测量信号超过第一阈值时发出过电流信号。

公开(公告)号：US07705637B2

公开(公告)日：2010-04-27

申请号：US12240636

申请日：2008-09-29

申请人： Markus Ladurner ,  Robert Illing

发明人： Markus Ladurner ,  Robert Illing

IPC分类号： H03K3/00

CPC分类号： H03K17/0822 ,  H03K2017/0806

摘要： A semiconductor switch, is provided that comprises a semiconductor element having a control terminal and two load terminals forming switching contacts of the semiconductor switch, a temperature measuring device for measuring the temperatures of the semiconductor element at two measurement locations spaced apart from one another, and also a control circuit connected between the temperature measuring device and the control terminal of the semiconductor element and having a control input forming the control contact of the semiconductor element, wherein provision is made for: measuring the temperatures of the semiconductor element at two measurement locations spaced apart from one another; providing a signal representing the difference between the two temperatures; driving a driving current of specific intensity into the control terminal of the semiconductor element if a corresponding signal is present at the control input in order to control the semiconductor element in the conducting state between its load terminals; increasing the intensity of the driving current if the semiconductor element is controlled in the conducting state and the temperature difference exceeds a first limit value.

摘要翻译： 提供一种半导体开关，其包括具有控制端子的半导体元件和形成半导体开关的开关触点的两个负载端子，用于在彼此间隔开的两个测量位置处测量半导体元件的温度的温度测量装置，以及 连接在温度测量装置和半导体元件的控制端子之间并具有形成半导体元件的控制触点的控制输入的控制电路，其中提供：在两个测量位置间隔测量半导体元件的温度 除了彼此; 提供表示两个温度之间的差异的信号; 如果在控制输入端存在相应的信号，则将特定强度的驱动电流驱动到半导体元件的控制端子中，以便控制半导体元件处于负载端子之间的导通状态; 如果半导体元件被控制在导通状态并且温差超过第一极限值，则增加驱动电流的强度。

公开(公告)号：US08848330B2

公开(公告)日：2014-09-30

申请号：US13194604

申请日：2011-07-29

申请人： Robert Illing

发明人： Robert Illing

IPC分类号： H02H5/04 ,  H02H7/22 ,  H03K17/082 ,  H03K17/08

CPC分类号： H02H7/222 ,  H02H5/044 ,  H03K17/0822 ,  H03K2017/0806

摘要： A method can be used for driving an electronic switch integrated in a semiconductor body. A first temperature is measured at a first position of the semiconductor body. A temperature propagation is detected in the semiconductor body. The electronic switch is switched off when the temperature at the first position rises above a first threshold that is set dependent on the detected temperature propagation.

摘要翻译： 可以使用一种方法来驱动集成在半导体本体中的电子开关。 在半导体本体的第一位置处测量第一温度。 在半导体本体中检测出温度传播。 当第一位置的温度升高到取决于检测到的温度传播设定的第一阈值时，电子开关被关闭。

公开(公告)号：US20110316606A1

公开(公告)日：2011-12-29

申请号：US12824891

申请日：2010-06-28

申请人： Markus Ladurner ,  Robert Illing ,  Paolo Del Croce ,  Bernhard Auer

发明人： Markus Ladurner ,  Robert Illing ,  Paolo Del Croce ,  Bernhard Auer

IPC分类号： H03K17/14

CPC分类号： H03K17/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： An embodiment method for power switch temperature control comprises monitoring a power transistor for a delta-temperature fault, and monitoring the power transistor for an over-temperature fault. If a delta-temperature fault is detected, then the power transistor is commanded to turn off. If an over-temperature fault is detected, then the power transistor is commanded to turn off, and delta-temperature hysteresis cycling is disabled.

摘要翻译： 用于功率开关温度控制的实施例方法包括监视功率晶体管的三角温度故障，并监视功率晶体管的过温故障。 如果检测到δ-温度故障，则命令关闭功率晶体管。 如果检测到过热故障，则命令关闭功率晶体管，并禁用增量 - 温度滞后循环。

公开(公告)号：US20110109372A1

公开(公告)日：2011-05-12

申请号：US12613761

申请日：2009-11-06

申请人： Alberto Zanardi ,  Erich Scheikl ,  Robert Illing ,  Herbert Hopfgartner

发明人： Alberto Zanardi ,  Erich Scheikl ,  Robert Illing ,  Herbert Hopfgartner

IPC分类号： G01K7/00

CPC分类号： H03K17/0822 ,  G01K3/10 ,  H01L23/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the active area, the measurement signal having a slope of a time-dependent steepness, and an evaluation circuit that is configured to provide an output signal that is representative of the steepness of the slope of the measurement signal and further configured to signal a steepness higher than a predefined threshold.

摘要翻译： 公开了一种具有热故障检测的半导体器件。 根据本发明的一个示例，这种半导体器件包括包括有源区的半导体芯片。 它还包括温度传感器装置，该温度传感器装置提供取决于有效区域内或附近的温度的测量信号，测量信号具有时间依赖性陡度的斜率，以及评估电路，其被配置为提供输出信号， 表示测量信号的斜率的陡度，并进一步被配置为发送高于预定阈值的陡度。